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Author Tsonev, I.; Boothroyd, J.; Kolev, S.; Bogaerts, A.
Title Simulation of glow and arc discharges in nitrogen: effects of the cathode emission mechanisms Type A1 Journal Article
Year 2023 Publication PLASMA SOURCES SCIENCE & TECHNOLOGY Abbreviated Journal
Volume 32 Issue 5 Pages 054002
Keywords A1 Journal Article; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ;
Abstract Experimental evidence in the literature has shown that low-current direct current nitrogen discharges can exist in both glow and arc regimes at atmospheric pressure. However, modelling investigations of the positive column that include the influence of the cathode phenomena are scarce. In this work we developed a 2D axisymmetric model of a plasma discharge in flowing nitrogen gas, studying the influence of the two cathode emission mechanisms—thermionic field emission and secondary electron emission—on the cathode region and the positive column. We show for an inlet gas flow velocity of 1 m s<sup>−1</sup>in the current range of 80–160 mA, that the electron emission mechanism from the cathode greatly affects the size and temperature of the cathode region, but does not significantly influence the discharge column at atmospheric pressure. We also demonstrate that in the discharge column the electron density balance is local and the electron production and destruction is dominated by volume processes. With increasing flow velocity, the discharge contraction is enhanced due to the increased convective heat loss. The cross sectional area of the conductive region is strongly dependent on the gas velocity and heat conductivity of the gas.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000987841800001 Publication Date 2023-05-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0963-0252 ISBN Additional Links UA library record; WoS full record
Impact Factor (down) 3.8 Times cited Open Access Not_Open_Access
Notes This research is financially supported by the European Union’s Horizon 2020 research and innovation programme under Grant Agreement No. 965546. Approved Most recent IF: 3.8; 2023 IF: 3.302
Call Number PLASMANT @ plasmant @c:irua:196972 Serial 8788
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Author Vanraes, P.; Parayil Venugopalan, S.; Besemer, M.; Bogaerts, A.
Title Assessing neutral transport mechanisms in aspect ratio dependent etching by means of experiments and multiscale plasma modeling Type A1 Journal Article
Year 2023 Publication Plasma Sources Science and Technology Abbreviated Journal Plasma Sources Sci. Technol.
Volume 32 Issue 6 Pages 064004
Keywords A1 Journal Article; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ;
Abstract Since the onset of pattern transfer technologies for chip manufacturing, various strategies have been developed to circumvent or overcome aspect ratio dependent etching (ARDE). These methods have, however, their own limitations in terms of etch non-idealities, throughput or costs. Moreover, they have mainly been optimized for individual in-device features and die-scale patterns, while occasionally ending up with poor patterning of metrology marks, affecting the alignment and overlay in lithography. Obtaining a better understanding of the underlying mechanisms of ARDE and how to mitigate them therefore remains a relevant challenge to date, for both marks and advanced nodes. In this work, we accordingly assessed the neutral transport mechanisms in ARDE by means of experiments and multiscale modeling for SiO<sub>2</sub>etching with CHF<sub>3</sub>/Ar and CF<sub>4</sub>/Ar plasmas. The experiments revealed a local maximum in the etch rate for an aspect ratio around unity, i.e. the simultaneous occurrence of regular and inverse reactive ion etching lag for a given etch condition. We were able to reproduce this ARDE trend in the simulations without taking into account charging effects and the polymer layer thickness, suggesting shadowing and diffuse reflection of neutrals as the primary underlying mechanisms. Subsequently, we explored four methods with the simulations to regulate ARDE, by varying the incident plasma species fluxes, the amount of polymer deposition, the ion energy and angular distribution and the initial hardmask sidewall angle, for which the latter was found to be promising in particular. Although our study focusses on feature dimensions characteristic to metrology marks and back-end-of-the-line integration, the obtained insights have a broader relevance, e.g. to the patterning of advanced nodes. Additionally, this work supports the insight that physisorption may be more important in plasma etching at room temperature than originally thought, in line with other recent studies, a topic on which we recommend further research.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 001021250100001 Publication Date 2023-06-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0963-0252 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.8 Times cited Open Access Not_Open_Access
Notes P Vanraes acknowledges funding by ASML for the project ‘Computational simulation of plasma etching of trench structures’. P Vanraes and A Bogaerts want to express their gratitude to Mark J Kushner (University of Michigan) for the sharing of the HPEM and MCFPM codes, and for the interesting exchange of views. P Vanraes wishes to thank Violeta Georgieva and Stefan Tinck for the fruitful discussions on the HPEM code, Yu-Ru Zhang for an example of the CCP reactor code and Karel Venken for his technical help with the server maintenance and use. S P Venugopalan and M Besemer wish to thank Luigi Scaccabarozzi, Sander Wuister, Coen Verschuren, Michael Kubis, Kuan-Ming Chen, Ruben Maas, Huaichen Zhang and Julien Mailfert (ASML) for the insightful discussions. Approved Most recent IF: 3.8; 2023 IF: 3.302
Call Number PLASMANT @ plasmant @c:irua:197760 Serial 8811
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Author Smith, G.J.; Diomede, P.; Gibson, A.R.; Doyle, S.J.; Guerra, V.; Kushner, M.J.; Gans, T.; Dedrick, J.P.
Title Low-pressure inductively coupled plasmas in hydrogen : impact of gas heating on the spatial distribution of atomic hydrogen and vibrationally excited states Type A1 Journal article
Year 2024 Publication Plasma sources science and technology Abbreviated Journal
Volume 33 Issue 2 Pages 025002-25020
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Non-equilibrium inductively coupled plasmas (ICPs) operating in hydrogen are of significant interest for applications including large-area materials processing. Increasing control of spatial gas heating, which drives the formation of neutral species density gradients and the rate of gas-temperature-dependent reactions, is critical. In this study, we use 2D fluid-kinetic simulations with the Hybrid Plasma Equipment Model to investigate the spatially resolved production of atomic hydrogen in a low-pressure planar ICP operating in pure hydrogen (10-20 Pa or 0.075-0.15 Torr, 300 W). The reaction set incorporates self-consistent calculation of the spatially resolved gas temperature and 14 vibrationally excited states. We find that the formation of neutral-gas density gradients, which result from spatially non-uniform electrical power deposition at constant pressure, can drive significant variations in the vibrational distribution function and density of atomic hydrogen when gas heating is spatially resolved. This highlights the significance of spatial gas heating on the production of reactive species in relatively high-power-density plasma processing sources.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 001154851700001 Publication Date 2024-01-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0963-0252 ISBN Additional Links UA library record; WoS full record
Impact Factor (down) 3.8 Times cited Open Access Not_Open_Access
Notes Approved Most recent IF: 3.8; 2024 IF: 3.302
Call Number UA @ admin @ c:irua:203866 Serial 9054
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Author Albrechts, M.; Tsonev, I.; Bogaerts, A.
Title Investigation of O atom kinetics in O2plasma and its afterglow Type A1 Journal Article
Year 2024 Publication Plasma Sources Science and Technology Abbreviated Journal Plasma Sources Sci. Technol.
Volume 33 Issue 4 Pages 045017
Keywords A1 Journal Article; oxygen plasma, pseudo-1D plug-flow kinetic model, O atoms, low-pressure validation, atmospheric pressure microwave torch; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ;
Abstract We have developed a comprehensive kinetic model to study the O atom kinetics in an O<sub>2</sub>plasma and its afterglow. By adopting a pseudo-1D plug-flow formalism within the kinetic model, our aim is to assess how far the O atoms travel in the plasma afterglow, evaluating its potential as a source of O atoms for post-plasma gas conversion applications. Since we could not find experimental data for pure O<sub>2</sub>plasma at atmospheric pressure, we first validated our model at low pressure (1–10 Torr) where very good experimental data are available. Good agreement between our model and experiments was achieved for the reduced electric field, gas temperature and the densities of the dominant neutral species, i.e. O<sub>2</sub>(a), O<sub>2</sub>(b) and O. Subsequently, we confirmed that the chemistry set is consistent with thermodynamic equilibrium calculations at atmospheric pressure. Finally, we investigated the O atom densities in the O<sub>2</sub>plasma and its afterglow, for which we considered a microwave O<sub>2</sub>plasma torch, operating at a pressure between 0.1 and 1 atm, for a flow rate of 20 slm and an specific energy input of 1656 kJ mol<sup>−1</sup>. Our results show that for both pressure conditions, a high dissociation degree of ca. 92% is reached within the discharge. However, the O atoms travel much further in the plasma afterglow for<italic>p</italic>= 0.1 atm (9.7 cm) than for<italic>p</italic>= 1 atm (1.4 cm), attributed to the longer lifetime (3.8 ms at 0.1 atm vs 1.8 ms at 1 atm) resulting from slower three-body recombination kinetics, as well as a higher volumetric flow rate.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 001209453500001 Publication Date 2024-04-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0963-0252 ISBN Additional Links UA library record; WoS full record
Impact Factor (down) 3.8 Times cited Open Access
Notes This research was supported by the Horizon Europe Framework Program ‘Research and Innovation Actions’ (RIA), Project CANMILK (Grant No. 101069491). Approved Most recent IF: 3.8; 2024 IF: 3.302
Call Number PLASMANT @ plasmant @c:irua:205920 Serial 9125
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Author Schryvers, D.; Cao, S.; Tirry, W.; Idrissi, H.; Van Aert, S.
Title Advanced three-dimensional electron microscopy techniques in the quest for better structural and functional materials Type A1 Journal article
Year 2013 Publication Science and technology of advanced materials Abbreviated Journal Sci Technol Adv Mat
Volume 14 Issue 1 Pages 014206-14213
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract After a short review of electron tomography techniques for materials science, this overview will cover some recent results on different shape memory and nanostructured metallic systems obtained by various three-dimensional (3D) electron imaging techniques. In binary NiTi, the 3D morphology and distribution of Ni4Ti3 precipitates are investigated by using FIB/SEM slice-and-view yielding 3D data stacks. Different quantification techniques will be presented including the principal ellipsoid for a given precipitate, shape classification following a Zingg scheme, particle distribution function, distance transform and water penetration. The latter is a novel approach to quantifying the expected matrix transformation in between the precipitates. The different samples investigated include a single crystal annealed with and without compression yielding layered and autocatalytic precipitation, respectively, and a polycrystal revealing different densities and sizes of the precipitates resulting in a multistage transformation process. Electron tomography was used to understand the interaction between focused ion beam-induced Frank loops and long dislocation structures in nanobeams of Al exhibiting special mechanical behaviour measured by on-chip deposition. Atomic resolution electron tomography is demonstrated on Ag nanoparticles in an Al matrix.
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Corporate Author Thesis
Publisher Place of Publication Sendai Editor
Language Wos 000316463800008 Publication Date 2013-03-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1468-6996;1878-5514; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.798 Times cited 6 Open Access
Notes Fwo; Iap; Esteem Approved Most recent IF: 3.798; 2013 IF: 2.613
Call Number UA @ lucian @ c:irua:107343 Serial 77
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Author Borkowski, R.; Straub, M.; Ou, Y.; Lefevre, Y.; Jelić, Ž.L.; Lanneer, W.; Kaneda, N.; Mahadevan, A.; Hueckstaedt, V.; van Veen, D.; Houtsma, V.; Coomans, W.; Bonk, R.; Maes, J.
Title FLCS-PON : a 100 Gbit/s flexible passive optical network: concepts and field trial Type A1 Journal article
Year 2021 Publication Journal Of Lightwave Technology Abbreviated Journal J Lightwave Technol
Volume 39 Issue 16 Pages 5314-5324
Keywords A1 Journal article; Mass communications; Condensed Matter Theory (CMT)
Abstract We demonstrate concepts and results of a field trial for a flexible-rate passive optical network (FLCS-PON), which delivers bitrates up to 100 Gbit/s and allows for adaptations in the transmission method to match the users' channel conditions and optimize throughput. FLCS-PON builds on top of the hardware ecosystem that will be developed for ITU-T 50 Gbit/s PON and employs three new ingredients: optical network unit (ONU) grouping, flexible modulation format, and flexible forward error correction (FEC) code rate. Together, these techniques take advantage of the optical distribution network (ODN) statistics to realize a system capable of more than twofold throughput increase compared to the upcoming 50 Gbit/s PON, but still able to support a full array of deployed fiber edge cases, which are problematic for legacy PONs. In this paper we explain the concepts behind enabling techniques of FLCS-PON. We then report on a field trial over a deployed fiber infrastructure, using a system consisting of one FLCS-PON OLT and two ONUs. We report both pre- and post-forward-error-correction (post-FEC) performance of our system, demonstrating achievable net bitrate over an operator's fiber infrastructure. We realize a downlink transmission at double the speed of ITU-T 50 Gbit/s PON for ONUs exhibiting lower optical path loss (OPL), while simultaneously continue to support ONUs at high OPLs. We additionally realize a record-high 31.5 dB loss budget for 100 Gbit/s transmission using a direct-detection ONU with an optical preamplifier.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000692209800017 Publication Date 2021-08-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0733-8724 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.671 Times cited Open Access Not_Open_Access
Notes Approved Most recent IF: 3.671
Call Number UA @ admin @ c:irua:181586 Serial 6995
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Author Celentano, G.; Rizzo, F.; Augieri, A.; Mancini, A.; Pinto, V.; Rufoloni, A.; Vannozzi, A.; MacManus-Driscoll, J.L.; Feighan, J.; Kursumovic, A.; Meledin, A.; Mayer, J.; Van Tendeloo, G.
Title YBa2Cu3O7−xfilms with Ba2Y(Nb,Ta)O6nanoinclusions for high-field applications Type A1 Journal article
Year 2020 Publication Superconductor Science & Technology Abbreviated Journal Supercond Sci Tech
Volume 33 Issue 4 Pages 044010
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The structural and transport properties of YBa2Cu3O7−x films grown by pulsed laser deposition with mixed 2.5 mol% Ba2YTaO6 (BYTO) and 2.5 mol% Ba2YNbO6 (BYNO) double-perovskite secondary phases are investigated in an extended film growth rate, R = 0.02–1.8 nm s−1. The effect of R on the film microstructure analyzed by TEM techniques shows an evolution from sparse and straight to denser, thinner and splayed continuous columns, with mixed BYNO + BYTO (BYNTO) composition, as R increases from 0.02 nm s−1 to 1.2 nm s−1. This microstructure results in very efficient flux pinning at 77 K, leading to a remarkable improvement in the critical current density (J c) behaviour, with the maximum pinning force density F p(Max) = 13.5 GN m−3 and the irreversibility field in excess of 11 T. In this range, the magnetic field values at which the F p is maximized varies from 1 T to 5 T, being related to the BYNTO columnar density. The film deposited when R = 0.3 nm s−1 exhibits the best performances over the whole temperature and magnetic field ranges, achieving F p(Max) = 900 GN m−3 at 10 K and 12 T. At higher rates, R > 1.2 nm s−1, BYNTO columns show a meandering nature and are prone to form short nanorods. In addition, in the YBCO film matrix a more disordered structure with a high density of short stacking faults is observed. From the analysis of the F p(H, T) curves it emerges that in films deposited at the high R limit, the vortex pinning is no longer dominated by BYNTO columnar defects, but by a new mechanism showing the typical temperature scaling law. Even though this microstructure produces a limited improvement at 77 K, it exhibits a strong J c improvement at lower temperature with F p = 700 GN m−3 at 10 K, 12 T and 900 GN m−3 at 4.2 K, 18 T.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000525650500001 Publication Date 2020-04-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.6 Times cited Open Access OpenAccess
Notes This work was partially financially supported by EUROTAPES, a collaborative project funded by the European Commission’s Seventh Framework Program (FP7/2007–2013) under Grant Agreement No. 280432. This work has been partially carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom programme 2014-2018 and 2019-2020 under grant agreement N° 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 823717 – ESTEEM3 (Nano-engineered YBCO Superconducting Tapes for High Field Applications, NESTApp). G. C. acknowledges the support of Michele De Angelis for XRD measurements and calculations. Approved Most recent IF: 3.6; 2020 IF: 2.878
Call Number UA @ lucian @c:irua:168582 Serial 6394
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Author Kenawy, A.; Magnus, W.; Milošević, M.V.; Sorée, B.
Title Electronically tunable quantum phase slips in voltage-biased superconducting rings as a base for phase-slip flux qubits Type A1 Journal article
Year 2020 Publication Superconductor Science & Technology Abbreviated Journal Supercond Sci Tech
Volume 33 Issue 12 Pages 125002
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Quantum phase slips represent a coherent mechanism to couple flux states of a superconducting loop. Since their first direct observation, there have been substantial developments in building charge-insensitive quantum phase-slip circuits. At the heart of these devices is a weak link, often a nanowire, interrupting a superconducting loop. Owing to the very small cross-sectional area of such a nanowire, quantum phase slip rates in the gigahertz range can be achieved. Instead, here we present the use of a bias voltage across a superconducting loop to electrostatically induce a weak link, thereby amplifying the rate of quantum phase slips without physically interrupting the loop. Our simulations reveal that the bias voltage modulates the free energy barrier between subsequent flux states in a very controllable fashion, providing a route towards a phase-slip flux qubit with a broadly tunable transition frequency.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000577207000001 Publication Date 2020-09-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.6 Times cited 4 Open Access
Notes ; ; Approved Most recent IF: 3.6; 2020 IF: 2.878
Call Number UA @ admin @ c:irua:172643 Serial 6503
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Author Linek, J.; Wyszynski, M.; Müller, B.; Korinski, D.; Milošević, M.V.; Kleiner, R.; Koelle, D.
Title On the coupling of magnetic moments to superconducting quantum interference devices Type A1 Journal article
Year 2024 Publication Superconductor science and technology Abbreviated Journal
Volume 37 Issue 2 Pages 025010-25012
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate the coupling factor phi( mu) that quantifies the magnetic flux phi per magnetic moment mu of a point-like magnetic dipole that couples to a superconducting quantum interference device (SQUID). Representing the dipole by a tiny current-carrying (Amperian) loop, the reciprocity of mutual inductances of SQUID and Amperian loop provides an elegant way of calculating phi(mu)(r,e(mu)) vs. position r and orientation e(mu) of the dipole anywhere in space from the magnetic field B-J(r) produced by a supercurrent circulating in the SQUID loop. We use numerical simulations based on London and Ginzburg-Landau theory to calculate phi (mu) from the supercurrent density distributions in various superconducting loop geometries. We treat the far-field regime ( r greater than or similar to a= inner size of the SQUID loop) with the dipole placed on (oriented along) the symmetry axis of circular or square shaped loops. We compare expressions for phi (mu) from simple filamentary loop models with simulation results for loops with finite width w (outer size A > alpha), thickness d and London penetration depth lambda(L )and show that for thin ( d << alpha ) and narrow (w < alpha) loops the introduction of an effective loop size a(eff) in the filamentary loop-model expressions results in good agreement with simulations. For a dipole placed right in the center of the loop, simulations provide an expression phi(mu)(a,A,d,lambda(L)) that covers a wide parameter range. In the near-field regime (dipole centered at small distance z above one SQUID arm) only coupling to a single strip representing the SQUID arm has to be considered. For this case, we compare simulations with an analytical expression derived for a homogeneous current density distribution, which yields excellent agreement for lambda(L)>w,d . Moreover, we analyze the improvement of phi(mu) provided by the introduction of a narrow constriction in the SQUID arm below the magnetic dipole.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 001145725500001 Publication Date 2024-01-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Additional Links UA library record; WoS full record
Impact Factor (down) 3.6 Times cited Open Access Not_Open_Access
Notes Approved Most recent IF: 3.6; 2024 IF: 2.878
Call Number UA @ admin @ c:irua:202759 Serial 9067
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Author Mehta, A.N.; Gauquelin, N.; Nord, M.; Orekhov, A.; Bender, H.; Cerbu, D.; Verbeeck, J.; Vandervorst, W.
Title Unravelling stacking order in epitaxial bilayer MX₂ using 4D-STEM with unsupervised learning Type A1 Journal article
Year 2020 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 31 Issue 44 Pages 445702
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Following an extensive investigation of various monolayer transition metal dichalcogenides (MX2), research interest has expanded to include multilayer systems. In bilayer MX2, the stacking order strongly impacts the local band structure as it dictates the local confinement and symmetry. Determination of stacking order in multilayer MX(2)domains usually relies on prior knowledge of in-plane orientations of constituent layers. This is only feasible in case of growth resulting in well-defined triangular domains and not useful in-case of closed layers with hexagonal or irregularly shaped islands. Stacking order can be discerned in the reciprocal space by measuring changes in diffraction peak intensities. Advances in detector technology allow fast acquisition of high-quality four-dimensional datasets which can later be processed to extract useful information such as thickness, orientation, twist and strain. Here, we use 4D scanning transmission electron microscopy combined with multislice diffraction simulations to unravel stacking order in epitaxially grown bilayer MoS2. Machine learning based data segmentation is employed to obtain useful statistics on grain orientation of monolayer and stacking in bilayer MoS2.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000561424400001 Publication Date 2020-07-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.5 Times cited 13 Open Access OpenAccess
Notes ; J.V. acknowledges funding from FLAG-ERA JTC2017 project 'Graph-Eye'. N.G. acknowledges funding from GOA project 'Solarpaint' of the University of Antwerp. This project has received funding from the European Union's Horizon 2020 research and innovation programme under Grant Agreement No. 823717-ESTEEM3. 4D STEM data was acquired on a hybrid pixel detector funded with a Hercules fund 'Direct electron detector for soft matter TEM' from the Flemish Government. M. N. acknowledges funding from a Marie Curie Fellowship agreement No 838001. We thank Dr Jiongjiong Mo and Dr Benjamin Groven for developing the CVD-MoS<INF>2</INF> growth on sapphire and providing the material used in this article. ; Approved Most recent IF: 3.5; 2020 IF: 3.44
Call Number UA @ admin @ c:irua:171119 Serial 6649
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Author Miranda, L.P.; da Costa, D.R.; Peeters, F.M.; Costa Filho, R.N.
Title Vacancy clustering effect on the electronic and transport properties of bilayer graphene nanoribbons Type A1 Journal article
Year 2023 Publication Nanotechnology Abbreviated Journal
Volume 34 Issue 5 Pages 055706-55710
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract Experimental realizations of two-dimensional materials are hardly free of structural defects such as e.g. vacancies, which, in turn, modify drastically its pristine physical defect-free properties. In this work, we explore effects due to point defect clustering on the electronic and transport properties of bilayer graphene nanoribbons, for AA and AB stacking and zigzag and armchair boundaries, by means of the tight-binding approach and scattering matrix formalism. Evident vacancy concentration signatures exhibiting a maximum amplitude and an universality regardless of the system size, stacking and boundary types, in the density of states around the zero-energy level are observed. Our results are explained via the coalescence analysis of the strong sizeable vacancy clustering effect in the system and the breaking of the inversion symmetry at high vacancy densities, demonstrating a similar density of states for two equivalent degrees of concentration disorder, below and above the maximum value.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000886630000001 Publication Date 2022-11-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.5 Times cited 1 Open Access OpenAccess
Notes Approved Most recent IF: 3.5; 2023 IF: 3.44
Call Number UA @ admin @ c:irua:192030 Serial 7350
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Author Llobet, E.; Espinosa, E.H.; Sotter, E.; Ionescu, R.; Vilanova, X.; Torres, J.; Felten, A.; Pireaux, J.J.; Ke, X.; Van Tendeloo, G.; Renaux, F.; Paint, Y.; Hecq, M.; Bittencourt, C.;
Title Carbon nanotube TiO2 hybrid films for detecting traces of O2 Type A1 Journal article
Year 2008 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 19 Issue 37 Pages 375501-375511
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Hybrid titania films have been prepared using an adapted sol-gel method for obtaining well-dispersed hydrogen plasma-treated multiwall carbon nanotubes in either pure titania or Nb-doped titania. The drop-coating method has been used to fabricate resistive oxygen sensors based on titania or on titania and carbon nanotube hybrids. Morphology and composition studies have revealed that the dispersion of low amounts of carbon nanotubes within the titania matrix does not significantly alter its crystallization behaviour. The gas sensitivity studies performed on the different samples have shown that the hybrid layers based on titania and carbon nanotubes possess an unprecedented responsiveness towards oxygen (i.e. more than four times higher than that shown by optimized Nb-doped TiO(2) films). Furthermore, hybrid sensors containing carbon nanotubes respond at significantly lower operating temperatures than their non-hybrid counterparts. These new hybrid sensors show a strong potential for monitoring traces of oxygen (i.e. <= 10 ppm) in a flow of CO(2), which is of interest for the beverage industry.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000258385600014 Publication Date 2008-08-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 48 Open Access
Notes Pai Approved Most recent IF: 3.44; 2008 IF: 3.446
Call Number UA @ lucian @ c:irua:103083 Serial 282
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Author Robin, I.-C.; Aichele, T.; Bougerol, C.; André, R.; Tatarenko, S.; Bellet-Amalric, E.; van Daele, B.; Van Tendeloo, G.
Title CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions Type A1 Journal article
Year 2007 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 18 Issue 26 Pages 265701,1-11
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000247103500012 Publication Date 2007-06-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 8 Open Access
Notes Approved Most recent IF: 3.44; 2007 IF: 3.310
Call Number UA @ lucian @ c:irua:64756 Serial 303
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Author Tao, X.Y.; Zhang, X.B.; Cheng, J.-P.; Liu, F.; Li, Y.; Van Tendeloo, G.
Title Controllable synthesis of novel one-dimensional carbon nanomaterials on an alkali-element-modified Cu catalyst Type A1 Journal article
Year 2006 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 17 Issue 1 Pages 224-226
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000234959200039 Publication Date 2005-12-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 4 Open Access
Notes Approved Most recent IF: 3.44; 2006 IF: 3.037
Call Number UA @ lucian @ c:irua:56629 Serial 501
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Author Wang, M.; Chang, K.; Wang, L.G.; Dai, N.; Peeters, F.M.
Title Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires Type A1 Journal article
Year 2009 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 20 Issue 36 Pages 365202,1-365202,8
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spinorbit interaction (RSOI) and the Dresselhaus spinorbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000269077000003 Publication Date 2009-08-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 14 Open Access
Notes Approved Most recent IF: 3.44; 2009 IF: 3.137
Call Number UA @ lucian @ c:irua:78933 Serial 588
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Author Ray, S.; Kolen'ko, Y.V.; Kovnir, K.A.; Lebedev, O.I.; Turner, S.; Chakraborty, T.; Erni, R.; Watanabe, T.; Van Tendeloo, G.; Yoshimura, M.; Itoh, M.
Title Defect controlled room temperature ferromagnetism in Co-doped barium titanate nanocrystals Type A1 Journal article
Year 2012 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 23 Issue 2 Pages 025702,1-025702,10
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Defect mediated high temperature ferromagnetism in oxide nanocrystallites is the central feature of this work. Here, we report the development of room temperature ferromagnetism in nanosized Co-doped barium titanate particles with a size of around 14 nm, synthesized by a solvothermal drying method. A combination of x-ray diffraction with state-of-the-art electron microscopy techniques confirms the intrinsic doping of Co into BaTiO3. The development of the room temperature ferromagnetism was tracked down to the different donor defects, namely hydroxyl groups at the oxygen site (\mathrm {OH}\mathrm {(O)}
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000298409000011 Publication Date 2011-12-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 19 Open Access
Notes Esteem 026019; Fwo Approved Most recent IF: 3.44; 2012 IF: 3.842
Call Number UA @ lucian @ c:irua:93636 Serial 614
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Author Milošević, M.M.; Tadić, M.; Peeters, F.M.
Title Effects of lateral asymmetry on electronic structure of strained semiconductor nanorings in a magnetic field Type A1 Journal article
Year 2008 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 19 Issue 45 Pages
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The influence of lateral asymmetry on the electronic structure and optical transitions in elliptical strained InAs nanorings is analyzed in the presence of a perpendicular magnetic field. Two-dimensional rings are assumed to have elliptical inner and outer boundaries oriented in mutually orthogonal directions. The influence of the eccentricity of the ring on the energy levels is analyzed. For large eccentricity of the ring, we do not find any AharonovBohm effect, in contrast to circular rings. Rather, the single-particle states of the electrons and the holes are localized as in two laterally coupled quantum dots formed in the lobes of the nanoring. Our work indicates that the control of shape is important for the existence of the AharonovBohm effect in semiconductor nanorings.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000259922000016 Publication Date 2008-10-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 11 Open Access
Notes Approved Most recent IF: 3.44; 2008 IF: 3.446
Call Number UA @ lucian @ c:irua:76874 Serial 865
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Author Schulze, A.; Hantschel, T.; Dathe, A.; Eyben, P.; Ke, X.; Vandervorst, W.
Title Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects Type A1 Journal article
Year 2012 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 23 Issue 30 Pages 305707
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The fabrication and integration of low-resistance carbon nanotubes (CNTs) for interconnects in future integrated circuits requires characterization techniques providing structural and electrical information at the nanometer scale. In this paper we present a slice-and-view approach based on electrical atomic force microscopy. Material removal achieved by successive scanning using doped ultra-sharp full-diamond probes, manufactured in-house, enables us to acquire two-dimensional (2D) resistance maps originating from different depths (equivalently different CNT lengths) on CNT-based interconnects. Stacking and interpolating these 2D resistance maps results in a three-dimensional (3D) representation (tomogram). This allows insight from a structural (e.g. size, density, distribution, straightness) and electrical point of view simultaneously. By extracting the resistance evolution over the length of an individual CNT we derive quantitative information about the resistivity and the contact resistance between the CNT and bottom electrode.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000306333500029 Publication Date 2012-07-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 29 Open Access
Notes Approved Most recent IF: 3.44; 2012 IF: 3.842
Call Number UA @ lucian @ c:irua:100750 Serial 895
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Author Trofimova, E.Y.; Kurdyukov, D.A.; Yakovlev, S.A.; Kirilenko, D.A.; Kukushkina, Y.A.; Nashchekin, A.V.; Sitnikova, A.A.; Yagovkina, M.A.; Golubev, V.G.
Title Monodisperse spherical mesoporous silica particles : fast synthesis procedure and fabrication of photonic-crystal films Type A1 Journal article
Year 2013 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 24 Issue 15 Pages 155601-155611
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract A procedure for the synthesis of monodisperse spherical mesoporous silica particles (MSMSPs) via the controlled coagulation of silica/surfactant clusters into spherical aggregates with mean diameters of 250-1500 nm has been developed. The synthesis is fast (taking less than 1 h) because identical clusters are simultaneously formed in the reaction mixture. The results of microscopic, x-ray diffraction, adsorption and optical measurements allowed us to conclude that the clusters are similar to 15 nm in size and have hexagonally packed cylindrical pore channels. The channel diameters in MSMSPs obtained with cethyltrimethylammonium bromide and decyltrimethylammonium bromide as structure-directing agents were 3.1 +/- 0.15 and 2.3 +/- 0.12 nm, respectively. The specific surface area and the pore volume of MSMSP were, depending on synthesis conditions, 480-1095 m(2) g(-1) and 0.50-0.65 cm(3) g(-1). The MSMSP were used to grow opal-like photonic-crystal films possessing a hierarchical macro-mesoporous structure, with pores within and between the particles. A selective filling of mesopore channels with glycerol, based on the difference between the capillary pressures in macro- and mesopores, was demonstrated. It is shown that this approach makes it possible to control the photonic bandgap position in mesoporous opal films by varying the degree of mesopore filling with glycerol. Online supplementary data available from stacks.iop.org/Nano/24/155601/mmedia
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000316988700009 Publication Date 2013-03-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 49 Open Access
Notes Approved Most recent IF: 3.44; 2013 IF: 3.672
Call Number UA @ lucian @ c:irua:108462 Serial 2191
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Author Du, G.; Van Tendeloo, G.
Title Preparation and structure analysis of Gd(OH)3 nanorods Type A1 Journal article
Year 2005 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 16 Issue 4 Pages 595-597
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000228949300052 Publication Date 2005-03-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 28 Open Access
Notes Iap V-1 Approved Most recent IF: 3.44; 2005 IF: 2.993
Call Number UA @ lucian @ c:irua:59057 Serial 2700
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Author Wu, Z.; Zhang, Z.Z.; Chang, K.; Peeters, F.M.
Title Quantum tunneling through graphene nanorings Type A1 Journal article
Year 2010 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 21 Issue 18 Pages 185201
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate theoretically quantum transport through graphene nanorings in the presence of a perpendicular magnetic field. Our theoretical results demonstrate that the graphene nanorings behave like a resonant tunneling device, contrary to the Aharonov-Bohm oscillations found in conventional semiconductor rings. The resonant tunneling can be tuned by the Fermi energy, the size of the central part of the graphene nanorings and the external magnetic field.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000276672100005 Publication Date 2010-04-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 34 Open Access
Notes ; This work is partly supported by the NSFC, the project from the Chinese Academy of Sciences, the bilateral project between China and Sweden, the Flemish Science Foundation (FWLO-Vl) and the Belgium Science Policy (IAP). ; Approved Most recent IF: 3.44; 2010 IF: 3.652
Call Number UA @ lucian @ c:irua:95614 Serial 2796
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Author Zhang, Z.Z.; Wu, Z.H.; Chang, K.; Peeters, F.M.
Title Resonant tunneling through S- and U-shaped graphene nanoribbons Type A1 Journal article
Year 2009 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 20 Issue 41 Pages 415203,1-415203,7
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We theoretically investigate resonant tunneling through S- and U-shaped nanostructured graphene nanoribbons. A rich structure of resonant tunneling peaks is found emanating from different quasi-bound states in the middle region. The tunneling current can be turned on and off by varying the Fermi energy. Tunability of resonant tunneling is realized by changing the width of the left and/or right leads and without the use of any external gates.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000269930100007 Publication Date 2009-09-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 32 Open Access
Notes Approved Most recent IF: 3.44; 2009 IF: 3.137
Call Number UA @ lucian @ c:irua:79311 Serial 2893
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Author Krsmanovic, R.; Morozov, V.A.; Lebedev, O.I.; Polizzi, S.; Speghini, A.; Bettinelli, M.; Van Tendeloo, G.
Title Structural and luminescence investigation on gadolinium gallium garnet nanocrystalline powders prepared by solution combustion synthesis Type A1 Journal article
Year 2007 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 18 Issue 32 Pages 325604-325609
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Nanocrystalline powders of undoped and lanthanide (Pr3+, Tm3+)- doped gadolinium gallium garnet, Gd3Ga5O12 (GGG), were prepared by propellant synthesis and studied by x-ray powder diffraction (XRD), electron diffraction (ED), high-resolution electron microscopy (HREM) and luminescence spectroscopy. The x-ray diffraction patterns of the GGG samples were analysed using the Rietveld method. The Rietveld refinement reveals the existence of two garnet-type phases: both are cubic (space group Ia $(3) over bar $d) with a slightly different lattice parameter and probably a slightly different composition. Electron diffraction and electron microscopy measurements confirm the x-ray diffraction results. EDX measurements for lanthanide-doped samples show that stable solid solutions with composition Gd(3-x)Ln(x)Ga(5)O(12), x approximate to 0.3 ( Ln = Pr; Tm) have been obtained. The luminescence properties of the Tm3+ -doped nanocrystalline GGG samples were measured and analysed.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000248231300010 Publication Date 2007-07-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 33 Open Access
Notes Iap5-01 Approved Most recent IF: 3.44; 2007 IF: 3.310
Call Number UA @ lucian @ c:irua:104042 Serial 3195
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Author Krsmanovic, R.; Lebedev, O.I.; Speghini, A.; Bettinelli, M.; Polizzi, S.; Van Tendeloo, G.
Title Structural characterization and luminescence properties of nanostructured lanthanide-doped Sc2O3 prepared by propellant synthesis Type A1 Journal article
Year 2006 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 17 Issue 11 Pages 2805-2812
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000238250300038 Publication Date 2006-05-17
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 22 Open Access
Notes IAP5-01; PRIN/Cofin Approved Most recent IF: 3.44; 2006 IF: 3.037
Call Number UA @ lucian @ c:irua:60046 Serial 3217
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Author Jehanathan, N.; Lebedev, O.; Gélard, I.; Dubourdieu, C.; Van Tendeloo, G.
Title Structure and defect characterization of multiferroic <tex>ReMnO$3 films and multilayers by TEM Type A1 Journal article
Year 2010 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 21 Issue 7 Pages 075705,1-075705,11
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Epitaxial rare earth manganite thin films (ReMnO3; Re = Tb, Ho, Er, and Y) and multilayers were grown by liquid injection metal organic chemical vapor deposition (MOCVD) on YSZ(111) and the same systems were grown c-oriented on Pt(111) buffered Si substrates. They have been structurally investigated by electron diffraction (ED) and high resolution transmission electron microscopy (HRTEM). Nanodomains of secondary orientation are observed in the hexagonal YMnO3 films. They are related to a YSZ(111) and Pt(111) misorientation. The epitaxial film thickness has an influence on the defect formation. TbO2 and Er2O3 inclusions are observed in the TbMnO3 and ErMnO3 films respectively. The structure and orientation of these inclusions are correlated to the resembling symmetry and structure of film and substrate. The type of defect formed in the YMnO3/HoMnO3 and YMnO3/ErMnO3 multilayers is also influenced by the type of substrate they are grown on. In our work, atomic growth models for the interface between the film/substrate are proposed and verified by comparison with observed and computer simulated images.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000273824500018 Publication Date 2010-01-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 15 Open Access
Notes Esteem 026019 Approved Most recent IF: 3.44; 2010 IF: 3.652
Call Number UA @ lucian @ c:irua:80436 Serial 3274
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Author Margueritat, J.; Gonzalo, J.; Afonso, C.N.; Hörmann, U.; Van Tendeloo, G.; Mlayah, A.; Murray, D.B.; Saviot, L.; Zhou, Y.; Hong, M.H.; Luk'yanchuk, B.S.
Title Surface enhanced Raman scattering of silver sensitized cobalt nanoparticles in metaldielectric nanocomposites Type A1 Journal article
Year 2008 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 19 Issue 37 Pages 375701,1-375701,4
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract We report the preparation of a new type of nanocomposite containing cobalt and silver nanoparticles organized in parallel layers with a well controlled separation. This arrangement allows the observation of an enhanced low-frequency Raman signal at the vibration frequency of cobalt nanoparticles excited through the surface plasmons of silver nanoparticles. Numerical simulations of the electric field confirm the emergence of hot spots when the separation between silver and cobalt nanoparticles is small enough.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000258385600018 Publication Date 2008-08-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 11 Open Access
Notes Approved Most recent IF: 3.44; 2008 IF: 3.446
Call Number UA @ lucian @ c:irua:81873 Serial 3396
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Author Malesevic, A.; Vitchev, R.; Schouteden, K.; Volodin, A.; Zhang, L.; Van Tendeloo, G.; Vanhulsel, A.; van Haesendonck, C.
Title Synthesis of few-layer graphene via microwave plasma-enhanced chemical vapour deposition Type A1 Journal article
Year 2008 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 19 Issue 30 Pages 305604,1-6
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000256838400014 Publication Date 2008-06-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 309 Open Access
Notes Approved Most recent IF: 3.44; 2008 IF: 3.446
Call Number UA @ lucian @ c:irua:70224 Serial 3455
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Author Badalyan, S.M.; Peeters, F.M.
Title Transport of magnetic edge states in a quantum wire exposed to a non-homogeneous magnetic field Type A1 Journal article
Year 2001 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 12 Issue Pages 570-576
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000173305300041 Publication Date 2002-08-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 5 Open Access
Notes Approved Most recent IF: 3.44; 2001 IF: 1.621
Call Number UA @ lucian @ c:irua:37276 Serial 3727
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Author Scuracchio, P.; Dobry, A.; Costamagna, S.; Peeters, F.M.
Title Tuning the polarized quantum phonon transmission in graphene nanoribbons Type A1 Journal article
Year 2015 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 26 Issue 26 Pages 305401
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract We propose systems that allow a tuning of the phonon transmission function T(omega) in graphene nanoribbons by using C-13 isotope barriers, antidot structures, and distinct boundary conditions. Phonon modes are obtained by an interatomic fifth-nearest neighbor force-constant model (5NNFCM) and T(omega) is calculated using the non-equilibrium Green's function formalism. We show that by imposing partial fixed boundary conditions it is possible to restrict contributions of the in-plane phonon modes to T(omega) at low energy. On the contrary, the transmission functions of out-of-plane phonon modes can be diminished by proper antidot or isotope arrangements. In particular, we show that a periodic array of them leads to sharp dips in the transmission function at certain frequencies omega(nu) which can be pre-defined as desired by controlling their relative distance and size. With this, we demonstrated that by adequate engineering it is possible to govern the magnitude of the ballistic transmission functions T(omega) in graphene nanoribbons. We discuss the implications of these results in the design of controlled thermal transport at the nanoscale as well as in the enhancement of thermo-electric features of graphene-based materials.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos 000358675900010 Publication Date 2015-07-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 5 Open Access
Notes ; Discussions with C E Repetto, C R Stia and K H Michel are gratefully acknowledged. This work was partially supported by the Flemish Science Foundation (FWO-Vl) and PIP 11220090100392 of CONICET (Argentina). We acknowledge funding from the FWO (Belgium)-MINCyT (Argentina) collaborative research project. ; Approved Most recent IF: 3.44; 2015 IF: 3.821
Call Number c:irua:127186 Serial 3759
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Author Milovanovic, S.P.; Peeters, F.M.
Title Characterization of the size and position of electron-hole puddles at a graphene p-n junction Type A1 Journal article
Year 2016 Publication Nanotechnology Abbreviated Journal Nanotechnology
Volume 27 Issue 27 Pages 105203
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract The effect of an electron-hole puddle on the electrical transport when governed by snake states in a bipolar graphene structure is investigated. Using numerical simulations we show that information on the size and position of the electron-hole puddle can be obtained using the dependence of the conductance on magnetic field and electron density of the gated region. The presence of the scatterer disrupts snake state transport which alters the conduction pattern. We obtain a simple analytical formula that connects the position of the electron-hole puddle with features observed in the conductance. The size of the electron-hole puddle is estimated from the magnetic field and gate potential that maximizes the effect of the puddle on the electrical transport.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language English Wos 000369849200003 Publication Date 2016-02-11
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor (down) 3.44 Times cited 3 Open Access
Notes This work was supported by the Flemish Science Foundation (FWO-Vl) and the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN. We acknowledge interesting correspondence with Thiti Taychatanapat. Approved Most recent IF: 3.44
Call Number c:irua:131907 Serial 4025
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