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Author Liu, Y.; Cheng, F.; Li, X.J.; Peeters, F.M.; Chang, K. doi  openurl
  Title Tuning of anisotropy in two-electron quantum dots by spin-orbit interactions Type A1 Journal article
  Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 99 Issue 3 Pages 032102,1-032102,3  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We investigate the influence of the spin-orbit interactions (SOIs) on the electron distribution and the optical absorption of a two-electron quantum dot. It is shown that the interplay between the SOIs makes the two-electron quantum dot behave like two laterally coupled quantum dots and the anisotropic distribution can be rotated from [110] to [11®0] by reversing the direction of the perpendicular electric field and detect it through the optical absorption spectrum.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000293679000026 Publication Date 2011-07-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 8 Open Access  
  Notes ; This work was supported by NSFC Grants No. 16760525405, 10874175 and 11004017 and the Belgian Science Policy 168(IAP). ; Approved Most recent IF: 3.411; 2011 IF: 3.844  
  Call Number UA @ lucian @ c:irua:92473 Serial 3749  
Permanent link to this record
 
 
Author Peelaers, H.; Hernández-Nieves, A.D.; Leenaerts, O.; Partoens, B.; Peeters, F.M. doi  openurl
  Title Vibrational properties of graphene fluoride and graphane Type A1 Journal article
  Year 2011 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 98 Issue 5 Pages 051914  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The vibrational properties of graphene fluoride and graphane are studied using ab initio calculations. We find that both sp(3) bonded derivatives of graphene have different phonon dispersion relations and phonon densities of states as expected from the different masses associated with the attached atoms of fluorine and hydrogen, respectively. These differences manifest themselves in the predicted temperature behavior of the constant-volume specific heat of both compounds. (C) 2011 American Institute of Physics. [doi:10.1063/1.3551712]  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000286988400027 Publication Date 2011-02-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 66 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-V1), the Belgian Science Policy (IAP), and the collaborative project FWO-MINCyT (Contract No. FW /08/01). A.D.H.-N. is also supported by ANPCyT (under Grant No. PICT2008-2236) ; Approved Most recent IF: 3.411; 2011 IF: 3.844  
  Call Number UA @ lucian @ c:irua:105604 Serial 3844  
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Author Milošević, M.V.; Peeters, F.M. doi  openurl
  Title Vortex manipulation in a superconducting matrix with view on applications Type A1 Journal article
  Year 2010 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 96 Issue 19 Pages 192501,1-192501,3  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We show how a single flux quantum can be effectively manipulated in a superconducting film with a matrix of blind holes. Such a sample can serve as a basic memory element, where the position of the vortex in a k×l matrix of pinning sites defines the desired combination of n bits of information (2n = k×l). Vortex placement is achieved by strategically applied current and the resulting position is read out via generated voltage between metallic contacts on the sample. Such a device can also act as a controllable source of a nanoengineered local magnetic field for, e.g., spintronics applications.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000277756400040 Publication Date 2010-05-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 14 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), the Belgian Science Policy (IAP), the ESF-NES and ESF-AQDJJ networks. ; Approved Most recent IF: 3.411; 2010 IF: 3.841  
  Call Number UA @ lucian @ c:irua:83657 Serial 3869  
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Author Masir, M.R.; Vasilopoulos, P.; Peeters, F.M. url  doi
openurl 
  Title Wavevector filtering through single-layer and bilayer graphene with magnetic barrier structures Type A1 Journal article
  Year 2008 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 93 Issue 24 Pages 242103,1-242103,3  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We show that the angular range of the transmission through magnetic barrier structures can be efficiently controlled in single-layer and bilayer graphenes and this renders the structures efficient wavevector filters. As the number of magnetic barriers increases, this range shrinks, the gaps in the transmission versus energy become wider, and the conductance oscillates with the Fermi energy.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000261896400032 Publication Date 2008-12-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 91 Open Access  
  Notes Approved Most recent IF: 3.411; 2008 IF: 3.726  
  Call Number UA @ lucian @ c:irua:75931 Serial 3910  
Permanent link to this record
 
 
Author Bals, S.; Van Tendeloo, G.; Salluzzo, M.; Maggio-Aprile, I. pdf  doi
openurl 
  Title Why are sputter deposited Nd1+xBa2-xCu3O7-\delta thin films flatter than NdBa2Cu3O7-\delta films? Type A1 Journal article
  Year 2001 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 79 Issue 22 Pages 3660-3662  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract High-resolution electron microscopy and scanning tunneling microscopy have been used to compare the microstructure of NdBa2Cu3O7-delta and Nd1+xBa2-xCu3O7-delta thin films. Both films contain comparable amounts of Nd2CuO4 inclusions. Antiphase boundaries are induced by unit cell high steps at the substrate or by a different interface stacking. In Nd1+xBa2-xCu3O7-delta the antiphase boundaries tend to annihilate by the insertion of extra Nd layers. Stacking faults, which can be characterized as local Nd2Ba2Cu4O9 inclusions, also absorb the excess Nd. A correlation is made between the excess Nd and the absence of growth spirals at the surface of the Nd-rich films. (C) 2001 American Institute of Physics.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000172204400034 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 13 Open Access  
  Notes Approved Most recent IF: 3.411; 2001 IF: 3.849  
  Call Number UA @ lucian @ c:irua:54801 Serial 3916  
Permanent link to this record
 
 
Author Homm, P.; Dillemans, L.; Menghini, M.; Van Bilzen, B.; Bakalov, P.; Su, C.Y.; Lieten, R.; Houssa, M.; Nasr Esfahani, D.; Covaci, L.; Peeters, F.M.; Seo, J.W.; Locquet, J.P.; url  doi
openurl 
  Title Collapse of the low temperature insulating state in Cr-doped V2O3 thin films Type A1 Journal article
  Year 2015 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 107 Issue 107 Pages 111904  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We have grown epitaxial Cr-doped V2O3 thin films with Cr concentrations between 0% and 20% on (0001)-Al2O3 by oxygen-assisted molecular beam epitaxy. For the highly doped samples (>3%), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between 1% and 3%), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for doping levels below 3% and increases the room temperature resistivity towards the values of Cr-doped V2O3 single crystals. It is well-know that oxygen excess stabilizes a metallic state in V2O3 single crystals. Hence, we propose that Cr doping promotes oxygen excess in our films during deposition, leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V2O3 films can be interesting candidates for field effect devices. (C) 2015 AIP Publishing LLC.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000361639200020 Publication Date 2015-09-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 14 Open Access  
  Notes ; The authors acknowledge financial support from the FWO Project No. G052010N10 as well as the EU-FP7 SITOGA Project. P.H. acknowledges support from Becas Chile-CONICYT. ; Approved Most recent IF: 3.411; 2015 IF: 3.302  
  Call Number UA @ lucian @ c:irua:128728 Serial 4149  
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Author Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. doi  openurl
  Title Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors Type A1 Journal article
  Year 2016 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 108 Issue 108 Pages 023506  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Conventional junctionless (JL) multi/gate (MuG) field-effect transistors (FETs) require extremely scaled channels to deliver high on-state current with low short-channel effect related leakage. In this letter, using ultra-thin 2D materials (e.g., monolayer MoS2), we present comparison of short-channel effects in JL, and inversion-mode (IM) FETs. We show that JL FETs exhibit better sub-threshold slope (S.S.) and drain-induced-barrier-lowering (DIBL) in comparison to IM FETs due to reduced peak electric field at the junctions. But, threshold voltage (VT) roll-off with channel length downscaling is found to be significantly higher in JL FETs than IM FETs, due to higher source/drain controlled charges (dE/dx) in the channel. Further, we show that although VT roll-off in JL FETs improves by increasing the gate control, i.e., by scaling the oxide, or channel thickness, the sensitivity of threshold voltage on structural parameters is found out to be high. (C) 2016 AIP Publishing LLC.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000370258400056 Publication Date 2016-01-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 13 Open Access  
  Notes ; ; Approved Most recent IF: 3.411  
  Call Number UA @ lucian @ c:irua:132318 Serial 4152  
Permanent link to this record
 
 
Author Balasubramaniam, Y.; Pobedinskas, P.; Janssens, S.D.; Sakr, G.; Jomard, F.; Turner, S.; Lu, Y.G.; Dexters, W.; Soltani, A.; Verbeeck, J.; Barjon, J.; Nesládek, M.; Haenen, K.; doi  openurl
  Title Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond Type A1 Journal article
  Year 2016 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 109 Issue 109 Pages 062105  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 mu m thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 mu m h(-1). A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 x 10(16) cm(-3) phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications. Published by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000383183600025 Publication Date 2016-08-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 20 Open Access  
  Notes This work was financially supported by the EU through the FP7 Collaborative Project “DIAMANT,” the “H2020 Research and Innovation Action Project” “GreenDiamond” (No. 640947), and the Research Foundation-Flanders (FWO) (Nos. G.0C02.15N and VS.024.16N). J.V. acknowledges funding from the “Geconcentreerde Onderzoekacties” (GOA) project “Solarpaint” of the University of Antwerp. The TEM instrument was partly funded by the Hercules fund from the Flemish Government. We particularly thank Dr. J. E. Butler (Naval Research Laboratory, USA) for the sample preparation by laser slicing for TEM analysis, Dr. J. Pernot (Universite Grenoble Alpes/CNRS-Institut Neel, France) for helpful discussions, Ms. C. Vilar (Universite de Versailles St. Quentin en Yvelines, France) for technical help on SEM-CL experiments, and Dr. S. S. Nicley (Hasselt University, Belgium) for improving the language of the text. P.P. and S.T. are Postdoctoral Fellows of the Research Foundation-Flanders (FWO). Approved Most recent IF: 3.411  
  Call Number UA @ lucian @ c:irua:137160 Serial 4407  
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Author Milovanović, S.P.; Peeters, F.M. doi  openurl
  Title Strain controlled valley filtering in multi-terminal graphene structures Type A1 Journal article
  Year 2016 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 109 Issue 109 Pages 203108  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by the deformation allows electrons from only one valley to transmit, and a current of electrons from a single valley is generated at the opposite side of the locally strained region. We show that valley filtering is most effective with bumps of a certain height and width. Despite the fact that the highest contribution to the polarized current comes from electrons from the lowest sub-band, contributions of other sub-bands are not negligible and can significantly enhance the output current. Published by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000388000000049 Publication Date 2016-11-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 50 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN. ; Approved Most recent IF: 3.411  
  Call Number UA @ lucian @ c:irua:139165 Serial 4463  
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Author Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. url  doi
openurl 
  Title Can p-channel tunnel field-effect transistors perform as good as n-channel? Type A1 Journal article
  Year 2014 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 105 Issue 4 Pages 043103  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We show that bulk semiconductor materials do not allow perfectly complementary p- and n-channel tunnel field-effect transistors (TFETs), due to the presence of a heavy-hole band. When tunneling in p-TFETs is oriented towards the gate-dielectric, field-induced quantum confinement results in a highest-energy subband which is heavy-hole like. In direct-bandgap IIIV materials, the most promising TFET materials, phonon-assisted tunneling to this subband degrades the subthreshold swing and leads to at least 10x smaller on-current than the desired ballistic on-current. This is demonstrated with quantum-mechanical predictions for p-TFETs with tunneling orthogonal to the gate, made out of InP, In0.53Ga0.47As, InAs, and a modified version of In0.53Ga0.47As with an artificially increased conduction-band density-of-states. We further show that even if the phonon-assisted current would be negligible, the build-up of a heavy-hole-based inversion layer prevents efficient ballistic tunneling, especially at low supply voltages. For p-TFET, a strongly confined n-i-p or n-p-i-p configuration is therefore recommended, as well as a tensily strained line-tunneling configuration. (C) 2014 AIP Publishing LLC.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000341152600067 Publication Date 2014-07-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 8 Open Access  
  Notes ; This work was supported by imec's industrial application program. D. Verreck acknowledges the support of a Ph.D. stipend from the Institute for Promotion of Innovation through Science and Technology in Flanders (IWT). ; Approved Most recent IF: 3.411; 2014 IF: 3.302  
  Call Number UA @ lucian @ c:irua:134433 Serial 4587  
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Author Lindell, L.; Çakir, D.; Brocks, G.; Fahlman, M.; Braun, S. url  doi
openurl 
  Title Role of intrinsic molecular dipole in energy level alignment at organic interfaces Type A1 Journal article
  Year 2013 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume 102 Issue 22 Pages 223301  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The energy level alignment in metal-organic and organic-organic junctions of the widely used materials tris-(8-hydroxyquinoline) aluminum (Alq(3)) and 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA) is investigated. The measured alignment schemes for single and bilayer films of Alq(3) and NTCDA are interpreted with the integer charge transfer (ICT) model. Single layer films of Alq(3) feature a constant vacuum level shift of similar to 0.2-0.4 eV in the absence of charge transfer across the interface. This finding is attributed to the intrinsic dipole of the Alq(3) molecule and (partial) ordering of the molecules at the interfaces. The vacuum level shift changes the onset of Fermi level pinning, as it changes the energy needed for equilibrium charge transfer across the interface. (C) 2013 AIP Publishing LLC.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000320621600081 Publication Date 2013-06-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 22 Open Access  
  Notes ; We acknowledge funding from the European Community's Framework Programme under Grant No. FP7-NMP-228424 of the MINOTOR project as well as a project grant from the Swedish Energy Agency, STEM. ; Approved Most recent IF: 3.411; 2013 IF: 3.515  
  Call Number UA @ lucian @ c:irua:128323 Serial 4605  
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Author Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. doi  openurl
  Title Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study Type A1 Journal article
  Year 2016 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 108 Issue 4 Pages 043504  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs. (C) 2016 AIP Publishing LLC.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000375217200061 Publication Date 2016-01-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 4 Open Access  
  Notes Approved Most recent IF: 3.411  
  Call Number UA @ lucian @ c:irua:144750 Serial 4677  
Permanent link to this record
 
 
Author Volodin, A.; Van Haesendonck, C.; Leenaerts, O.; Partoens, B.; Peeters, F.M. pdf  doi
openurl 
  Title Stress dependence of the suspended graphene work function : vacuum Kelvin probe force microscopy and density functional theory Type A1 Journal article
  Year 2017 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 110 Issue 19 Pages 193101  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We report on work function measurements on graphene, which is exfoliated over a predefined array of wells in silicon oxide, by Kelvin probe force microscopy operating in a vacuum. The obtained graphene sealed microchambers can support large pressure differences, providing controllable stretching of the nearly impermeable graphene membranes. These measurements allow detecting variations of the work function induced by the mechanical stresses in the suspended graphene where the work function varies linearly with the strain and changes by 62 +/- 2 meV for 1 percent of strain. Our related ab initio calculations result in a work function variation that is a factor of 1.4 larger than the experimental value. The limited discrepancy between the theory and the experiment can be accounted for by a charge transfer from the unstrained to the strained graphene regions. Published by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000402319200036 Publication Date 2017-05-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 8 Open Access  
  Notes ; The authors wish to thank A. Klekachev (IMEC Leuven, Belgium) for the fabrication of the samples. This work was supported by the Science Foundation-Flanders (FWO, Belgium). The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center), funded by the Hercules Foundation and the Flemish Government-Department EWI. The Hercules Foundation also funded the scanning probe microscopy equipment. ; Approved Most recent IF: 3.411  
  Call Number UA @ lucian @ c:irua:144279 Serial 4690  
Permanent link to this record
 
 
Author Jones, E.; Cooper, D.; Rouvière, J.-L.; Béché, A.; Azize, M.; Palacios, T.; Gradecak, S. doi  openurl
  Title Towards rapid nanoscale measurement of strain in III-nitride heterostructures Type A1 Journal article
  Year 2013 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume 103 Issue Pages 231904  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We report the structural and compositional nanoscale characterization of InAlN/GaN nanoribbon-structured high electron mobility transistors (HEMTs) through the use of geometric phase analysis (GPA) and nanobeam electron diffraction (NBED). The strain distribution in the HEMT layer is quantified and compared to the expected strain profile for the nominal structure predicted by finite element analysis (FEA). Using the experimental strain results, the actual structure is determined and used to modify the FEA model. The improved fit of the model demonstrates that GPA and NBED provide a powerful platform for routine and rapid characterization of strain in III-V semiconducting device systems leading to insights into device evolution during processing and future device optimization.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000328634900025 Publication Date 2013-12-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 6 Open Access  
  Notes Approved Most recent IF: 3.411; 2013 IF: 3.515  
  Call Number UA @ lucian @ c:irua:136443 Serial 4513  
Permanent link to this record
 
 
Author Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L. doi  openurl
  Title Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy Type A1 Journal article
  Year 2012 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume 112 Issue Pages 124505  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000312829400128 Publication Date 2012-12-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 14 Open Access  
  Notes Approved Most recent IF: 3.411; 2012 IF: 3.794  
  Call Number UA @ lucian @ c:irua:136433 Serial 4510  
Permanent link to this record
 
 
Author Milovanović, S.P.; Tadic, M.Z.; Peeters, F.M. doi  openurl
  Title Graphene membrane as a pressure gauge Type A1 Journal article
  Year 2017 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 111 Issue 4 Pages 043101  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Straining graphene results in the appearance of a pseudo-magnetic field which alters its local electronic properties. Applying a pressure difference between the two sides of the membrane causes it to bend/bulge resulting in a resistance change. We find that the resistance changes linearly with pressure for bubbles of small radius while the response becomes non-linear for bubbles that stretch almost to the edges of the sample. This is explained as due to the strong interference of propagating electronic modes inside the bubble. Our calculations show that high gauge factors can be obtained in this way which makes graphene a good candidate for pressure sensing. Published by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000406779700035 Publication Date 2017-07-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 11 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl), the Methusalem program, the Erasmus+ programme, and the Serbian Ministry of Education, Science and Technological Development. ; Approved Most recent IF: 3.411  
  Call Number UA @ lucian @ c:irua:145202 Serial 4718  
Permanent link to this record
 
 
Author Zhou, Y.; Ramaneti, R.; Anaya, J.; Korneychuk, S.; Derluyn, J.; Sun, H.; Pomeroy, J.; Verbeeck, J.; Haenen, K.; Kuball, M. doi  openurl
  Title Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs Type A1 Journal article
  Year 2017 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 111 Issue 4 Pages 041901  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (k(Dia)) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of k(Dia) in the measured 25-225 degrees C range. Device simulation using the experimental jDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD. Published by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000406779700008 Publication Date 2017-07-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 78 Open Access Not_Open_Access  
  Notes ; The authors are grateful to Professor Michael Uren and Dr. Roland B. Simon (University of Bristol) for helpful discussions and to Dr. Sien Drijkoningen (Hasselt University) for taking the SEM micrographs. This work was in part supported by DARPA under Contract No. FA8650-15-C-7517, monitored by Dr. Avram Bar Cohen and Dr. John Blevins, and supported by Dr. Joseph Maurer and Dr. Abirami Sivananthan. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of DARPA. Y.Z. acknowledges China Scholarship Council for the financial support. S.K. and J.V. acknowledge the FWO-Vlaanderen for financial support under contract G.0044.13N “Charge ordering.” ; Approved Most recent IF: 3.411  
  Call Number UA @ lucian @ c:irua:145203 Serial 4728  
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Author Abdullah, H.M.; Van der Donck, M.; Bahlouli, H.; Peeters, F.M.; Van Duppen, B. pdf  url
doi  openurl
  Title Graphene quantum blisters : a tunable system to confine charge carriers Type A1 Journal article
  Year 2018 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 112 Issue 21 Pages 213101  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Due to Klein tunneling, electrostatic confinement of electrons in graphene is not possible. This hinders the use of graphene for quantum dot applications. Only through quasi-bound states with finite lifetime has one achieved to confine charge carriers. Here, we propose that bilayer graphene with a local region of decoupled graphene layers is able to generate bound states under the application of an electrostatic gate. The discrete energy levels in such a quantum blister correspond to localized electron and hole states in the top and bottom layers. We find that this layer localization and the energy spectrum itself are tunable by a global electrostatic gate and that the latter also coincides with the electronic modes in a graphene disk. Curiously, states with energy close to the continuum exist primarily in the classically forbidden region outside the domain defining the blister. The results are robust against variations in size and shape of the blister which shows that it is a versatile system to achieve tunable electrostatic confinement in graphene. Published by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000433140900025 Publication Date 2018-05-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 9 Open Access  
  Notes ; H.M.A. and H.B. acknowledge the Saudi Center for Theoretical Physics (SCTP) for their generous support and the support of KFUPM under physics research group Project Nos. RG1502-1 and RG1502-2. This work was supported by the Flemish Science Foundation (FWO-Vl) by a post-doctoral fellowship (B.V.D.) and a doctoral fellowship (M.V.d.D.). ; Approved Most recent IF: 3.411  
  Call Number UA @ lucian @ c:irua:151505UA @ admin @ c:irua:151505 Serial 5027  
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Author Kong, X.; Li, L.; Peeters, F.M. pdf  doi
openurl 
  Title Topological Dirac semimetal phase in <tex> $GexSny alloys Type A1 Journal article
  Year 2018 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 112 Issue 25 Pages 251601  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Recently, two stable allotropes (germancite and stancite) for the group IV elements (Ge and Sn) with a staggered layered dumbell structure were proposed to be three-dimensional (3D) topological Dirac semimetals [Phys. Rev. B 93, 241117 (2016)]. A pair of Dirac points is on the rotation axis away from the time-reversal invariant momentum, and the stability of the 3D bulk Dirac points is protected by the C-3 rotation symmetry. Here, we use the first principles calculations to investigate GexSny alloys which share the same rhombohedral crystal structure with the space group of D-3d(6). Six GexSny alloys are predicted to be energetically and dynamically stable, where (x, y) = (8, 6) and (6, 8) and the alpha and beta phases of (10, 4) and (4, 10). Our results demonstrate that all the six GexSny alloys are topological Dirac semimetals. The different nontrivial surface states and surface Fermi arcs are identified. Our work will substantially enrich the family of 3D Dirac semimetals which are within the reach of experimental realization. Published by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000435987400013 Publication Date 2018-06-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 8 Open Access  
  Notes ; This work was supported by the Collaborative Innovation Center of Quantum Matter, the Fonds voor Wetenschappelijk Onderzoek (FWO-VI), and the FLAG-ERA Project TRANS 2D TMD. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center), funded by the Research Foundation – Flanders (FWO) and the Flemish Government – department EWI, and the National Supercomputing Center in Tianjin, funded by the Collaborative Innovation Center of Quantum Matter. ; Approved Most recent IF: 3.411  
  Call Number UA @ lucian @ c:irua:151970UA @ admin @ c:irua:151970 Serial 5045  
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Author Li, L.L.; Peeters, F.M. url  doi
openurl 
  Title Strain engineered linear dichroism and Faraday rotation in few-layer phosphorene Type A1 Journal article
  Year 2019 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 114 Issue 24 Pages 243102  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We investigate theoretically the linear dichroism and the Faraday rotation of strained few-layer phosphorene, where strain is applied uniaxially along the armchair or zigzag direction of the phosphorene lattice. We calculate the optical conductivity tensor of uniaxially strained few-layer phosphorene by means of the Kubo formula within the tight-binding approach. We show that the linear dichroism and the Faraday rotation of few-layer phosphorene can be significantly modulated by the applied strain. The modulation depends strongly on both the magnitude and direction of strain and becomes more pronounced with increasing number of phosphorene layers. Our results are relevant for mechano-optoelectronic applications based on optical absorption and Hall effects in strained few-layer phosphorene.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000472599100029 Publication Date 2019-06-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 12 Open Access  
  Notes ; This work was financially supported by the Flemish Science Foundation (FWO-Vl) and by the FLAG-ERA Project TRANS-2D-TMD. ; Approved Most recent IF: 3.411  
  Call Number UA @ admin @ c:irua:161327 Serial 5428  
Permanent link to this record
 
 
Author Zarenia, M.; Conti, S.; Peeters, F.M.; Neilson, D. pdf  doi
openurl 
  Title Coulomb drag in strongly coupled quantum wells : temperature dependence of the many-body correlations Type A1 Journal article
  Year 2019 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 115 Issue 20 Pages 202105  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We investigate the effect of the temperature dependence of many-body correlations on hole-hole Coulomb drag in strongly coupled GaAs/GaAlAs double quantum wells. For arbitrary temperatures, we obtained the correlations using the classical-map hypernetted-chain approach. We compare the temperature dependence of the resulting drag resistivities rho D(T) at different densities with rho D(T) calculated assuming correlations fixed at zero temperature. Comparing the results with those when correlations are completely neglected, we confirm that correlations significantly increase the drag. We find that the drag becomes sensitive to the temperature dependence of T greater than or similar to 2TF, twice the Fermi temperature. Our results show excellent agreement with available experimental data. Published under license by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000498619400007 Publication Date 2019-11-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited 2 Open Access  
  Notes Approved Most recent IF: 3.411  
  Call Number UA @ admin @ c:irua:165135 Serial 6291  
Permanent link to this record
 
 
Author Bafekry, A.; Stampfl, C.; Faraji, M.; Yagmurcukardes, M.; Fadlallah, M.M.; Jappor, H.R.; Ghergherehchi, M.; Feghhi, S.A.H. doi  openurl
  Title A Dirac-semimetal two-dimensional BeN4 : thickness-dependent electronic and optical properties Type A1 Journal article
  Year 2021 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume 118 Issue 20 Pages 203103  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Motivated by the recent experimental realization of a two-dimensional (2D) BeN4 monolayer, in this study we investigate the structural, dynamical, electronic, and optical properties of a monolayer and few-layer BeN4 using first-principles calculations. The calculated phonon band dispersion reveals the dynamical stability of a free-standing BeN4 layer, while the cohesive energy indicates the energetic feasibility of the material. Electronic band dispersions show that monolayer BeN4 is a semi-metal whose conduction and valence bands touch each other at the Sigma point. Our results reveal that increasing the layer number from single to six-layers tunes the electronic nature of BeN4. While monolayer and bilayer structures display a semi-metallic behavior, structures thicker than that of three-layers exhibit a metallic nature. Moreover, the optical parameters calculated for monolayer and bilayer structures reveal that the bilayer can absorb visible light in the ultraviolet and visible regions better than the monolayer structure. Our study investigates the electronic properties of Dirac-semimetal BeN4 that can be an important candidate for applications in nanoelectronic and optoelectronic. Published under an exclusive license by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000691329900002 Publication Date 2021-05-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited Open Access Not_Open_Access  
  Notes Approved Most recent IF: 3.411  
  Call Number UA @ admin @ c:irua:181725 Serial 6980  
Permanent link to this record
 
 
Author Bafekry, A.; Sarsari, I.A.; Faraji, M.; Fadlallah, M.M.; Jappor, H.R.; Karbasizadeh, S.; Nguyen, V.; Ghergherehchi, M. url  doi
openurl 
  Title Electronic and magnetic properties of two-dimensional of FeX (X = S, Se, Te) monolayers crystallize in the orthorhombic structures Type A1 Journal article
  Year 2021 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume 118 Issue 14 Pages 143102  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract In this Letter, we explore the lattice, dynamical stability, and electronic and magnetic properties of FeTe bulk and FeX (X=S, Se, Te) monolayers using the density functional calculations. The phonon dispersion relation, elastic stability criteria, and cohesive energy results show the stability of studied FeX monolayers. The mechanical properties reveal that all FeX monolayers have a brittle nature. Furthermore, these structures are stable as we move down the 6A group in the periodic table, i.e., from S, Se, and Te. The stability and work function decrease as the electronegativity decreases. The spin-polarized electronic structures demonstrate that the FeTe monolayer has a total magnetization of 3.8 mu (B), which is smaller than the magnetization of FeTe bulk (4.7 mu (B)). However, FeSe and FeS are nonmagnetic monolayers. The FeTe monolayer can be a good candidate material for spin filter applications due to its electronic and magnetic properties. This study highlights the bright prospect for the application of FeX monolayers in electronic structures.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000637703700001 Publication Date 2021-04-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.411 Times cited Open Access OpenAccess  
  Notes Approved Most recent IF: 3.411  
  Call Number UA @ admin @ c:irua:177731 Serial 6985  
Permanent link to this record
 
 
Author Dong, H.M.; Tao, Z.H.; Duan, Y.F.; Li, L.L.; Huang, F.; Peeters, F.M. url  doi
openurl 
  Title Substrate dependent terahertz magneto-optical properties of monolayer WS2 Type A1 Journal article
  Year 2021 Publication Optics Letters Abbreviated Journal Opt Lett  
  Volume 46 Issue 19 Pages 4892-4895  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Terahertz (THz) magneto-optical (MO) properties of monolayer (ML) tungsten disulfide (WS2), placed on different substrates and subjected to external magnetic fields, are studied using THz time-domain spectroscopy (TDS). We find that the THz MO conductivity exhibits a nearly linear response in a weak magnetic field, while a distinctly nonlinear/oscillating behavior is found in strong magnetic fields owing to strong substrate-induced random impurity scattering and interactions. The THz MO response of ML WS2 depends sensitively on the choice of the substrates, which we trace back to electronic localization and the impact of the substrates on the Landau level (LL) spectrum. Our results provide an in-depth understanding of the THz MO properties of ML WS2/substrate systems, especially the effect of substrates, which can be utilized to realize atomically thin THz MO nano-devices. (C) 2021 Optical Society of America  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000702746400048 Publication Date 2021-09-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0146-9592 ISBN Additional Links UA library record; WoS full record  
  Impact Factor (up) 3.416 Times cited 2 Open Access OpenAccess  
  Notes Approved Most recent IF: 3.416  
  Call Number UA @ admin @ c:irua:182526 Serial 7023  
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Author Cagno, S.; Janssens, K.; Mendera, M. doi  openurl
  Title Compositional analysis of Tuscan glass samples: in search of raw materials fingerprints Type A1 Journal article
  Year 2008 Publication Analytical and bioanalytical chemistry Abbreviated Journal Anal Bioanal Chem  
  Volume 391 Issue 4 Pages 1389-1395  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000256088700035 Publication Date 2008-02-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1618-2642 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.431 Times cited 26 Open Access  
  Notes Approved Most recent IF: 3.431; 2008 IF: 3.328  
  Call Number UA @ admin @ c:irua:69320 Serial 5545  
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Author Bugani, S.; Camaiti, M.; Morselli, L.; Van de Casteele, E.; Janssens, K. doi  openurl
  Title Investigating morphological changes in treated vs. untreated stone building materials by x-ray micro-CT Type A1 Journal article
  Year 2008 Publication Analytical and bioanalytical chemistry Abbreviated Journal Anal Bioanal Chem  
  Volume 391 Issue 4 Pages 1343-1350  
  Keywords A1 Journal article; Vision lab; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000256088700030 Publication Date 2008-03-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1618-2642 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.431 Times cited 25 Open Access  
  Notes Approved Most recent IF: 3.431; 2008 IF: 3.328  
  Call Number UA @ admin @ c:irua:69319 Serial 5673  
Permanent link to this record
 
 
Author Terzano, R.; Alfeld, M.; Janssens, K.; Vekemans, B.; Schoonjans, T.; Vincze, L.; Tomasi, N.; Pinton, R.; Cesco, S. pdf  doi
openurl 
  Title Spatially resolved (semi)quantitative determination of iron (Fe) in plants by means of synchrotron micro X-ray fluorescence Type A1 Journal article
  Year 2013 Publication Analytical and bioanalytical chemistry Abbreviated Journal Anal Bioanal Chem  
  Volume 405 Issue 10 Pages 3341-3350  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)  
  Abstract Iron (Fe) is an essential element for plant growth and development; hence determining Fe distribution and concentration inside plant organs at the microscopic level is of great relevance to better understand its metabolism and bioavailability through the food chain. Among the available microanalytical techniques, synchrotron mu-XRF methods can provide a powerful and versatile array of analytical tools to study Fe distribution within plant samples. In the last years, the implementation of new algorithms and detection technologies has opened the way to more accurate (semi)quantitative analyses of complex matrices like plant materials. In this paper, for the first time the distribution of Fe within tomato roots has been imaged and quantified by means of confocal mu-XRF and exploiting a recently developed fundamental parameter-based algorithm. With this approach, Fe concentrations ranging from few hundreds of ppb to several hundreds of ppm can be determined at the microscopic level without cutting sections. Furthermore, Fe (semi)quantitative distribution maps were obtained for the first time by using two opposing detectors to collect simultaneously the XRF radiation emerging from both sides of an intact cucumber leaf.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000316338700033 Publication Date 2013-02-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1618-2642 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.431 Times cited 27 Open Access  
  Notes ; Research was supported by grants from Italian MIUR (FIRB-Programma “Futuro in Ricerca”) and Free University of Bolzano (TN5046 and TN5056). Synchrotron experiments at HASY-LAB were financially supported by the European Community Research Infrastructure Action under the FP6 “Structuring the European Research Area” Program I (Integrating Activity on Synchrotron and Free Electron Laser Science; project: contract RII3-CT-2004-506008). Matthias Alfeld receives a Ph.D. fellowship of the Research Foundation-Flanders (FWO). We thank Karen Rickers-Appel for her scientific and technical support in obtaining the experimental data at Beamline L (HASYLAB, DESY, Hamburg, Germany). ; Approved Most recent IF: 3.431; 2013 IF: 3.578  
  Call Number UA @ admin @ c:irua:108261 Serial 5838  
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Author Llobet, E.; Espinosa, E.H.; Sotter, E.; Ionescu, R.; Vilanova, X.; Torres, J.; Felten, A.; Pireaux, J.J.; Ke, X.; Van Tendeloo, G.; Renaux, F.; Paint, Y.; Hecq, M.; Bittencourt, C.; pdf  doi
openurl 
  Title Carbon nanotube TiO2 hybrid films for detecting traces of O2 Type A1 Journal article
  Year 2008 Publication Nanotechnology Abbreviated Journal Nanotechnology  
  Volume 19 Issue 37 Pages 375501-375511  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Hybrid titania films have been prepared using an adapted sol-gel method for obtaining well-dispersed hydrogen plasma-treated multiwall carbon nanotubes in either pure titania or Nb-doped titania. The drop-coating method has been used to fabricate resistive oxygen sensors based on titania or on titania and carbon nanotube hybrids. Morphology and composition studies have revealed that the dispersion of low amounts of carbon nanotubes within the titania matrix does not significantly alter its crystallization behaviour. The gas sensitivity studies performed on the different samples have shown that the hybrid layers based on titania and carbon nanotubes possess an unprecedented responsiveness towards oxygen (i.e. more than four times higher than that shown by optimized Nb-doped TiO(2) films). Furthermore, hybrid sensors containing carbon nanotubes respond at significantly lower operating temperatures than their non-hybrid counterparts. These new hybrid sensors show a strong potential for monitoring traces of oxygen (i.e. <= 10 ppm) in a flow of CO(2), which is of interest for the beverage industry.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000258385600014 Publication Date 2008-08-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.44 Times cited 48 Open Access  
  Notes Pai Approved Most recent IF: 3.44; 2008 IF: 3.446  
  Call Number UA @ lucian @ c:irua:103083 Serial 282  
Permanent link to this record
 
 
Author Wang, M.; Chang, K.; Wang, L.G.; Dai, N.; Peeters, F.M. doi  openurl
  Title Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires Type A1 Journal article
  Year 2009 Publication Nanotechnology Abbreviated Journal Nanotechnology  
  Volume 20 Issue 36 Pages 365202,1-365202,8  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spinorbit interaction (RSOI) and the Dresselhaus spinorbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000269077000003 Publication Date 2009-08-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.44 Times cited 14 Open Access  
  Notes Approved Most recent IF: 3.44; 2009 IF: 3.137  
  Call Number UA @ lucian @ c:irua:78933 Serial 588  
Permanent link to this record
 
 
Author Ray, S.; Kolen'ko, Y.V.; Kovnir, K.A.; Lebedev, O.I.; Turner, S.; Chakraborty, T.; Erni, R.; Watanabe, T.; Van Tendeloo, G.; Yoshimura, M.; Itoh, M. pdf  doi
openurl 
  Title Defect controlled room temperature ferromagnetism in Co-doped barium titanate nanocrystals Type A1 Journal article
  Year 2012 Publication Nanotechnology Abbreviated Journal Nanotechnology  
  Volume 23 Issue 2 Pages 025702,1-025702,10  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Defect mediated high temperature ferromagnetism in oxide nanocrystallites is the central feature of this work. Here, we report the development of room temperature ferromagnetism in nanosized Co-doped barium titanate particles with a size of around 14 nm, synthesized by a solvothermal drying method. A combination of x-ray diffraction with state-of-the-art electron microscopy techniques confirms the intrinsic doping of Co into BaTiO3. The development of the room temperature ferromagnetism was tracked down to the different donor defects, namely hydroxyl groups at the oxygen site (\mathrm {OH}\mathrm {(O)}  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000298409000011 Publication Date 2011-12-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0957-4484;1361-6528; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor (up) 3.44 Times cited 19 Open Access  
  Notes Esteem 026019; Fwo Approved Most recent IF: 3.44; 2012 IF: 3.842  
  Call Number UA @ lucian @ c:irua:93636 Serial 614  
Permanent link to this record
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