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“Landau levels in graphene bilayer quantum dots”. Pereira JM, Peeters FM, Vasilopoulos P, Costa Filho RN, Farias GA, Physical review : B : solid state 79, 195403 (2009). http://doi.org/10.1103/PhysRevB.79.195403
Abstract: We investigate localized electron and hole states in parabolic quantum dots of biased graphene bilayers in the presence of a perpendicular magnetic field. These quantum dots can be created by means of nanostructured gates or by position-dependent doping, which can create a gap in the otherwise gapless dispersion of a graphene bilayer. Numerical results show the energy levels of confined electrons and holes as a function of the dot parameters and the magnetic field. Remarkable crossings of energy levels are found.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 29
DOI: 10.1103/PhysRevB.79.195403
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“Mg(OH)2-WS2 van der Waals heterobilayer : electric field tunable band-gap crossover”. Yagmurcukardes M, Torun E, Senger RT, Peeters FM, Sahin H, Physical review B 94, 195403 (2016). http://doi.org/10.1103/PHYSREVB.94.195403
Abstract: Magnesium hydroxide [Mg(OH)(2)] has a layered brucitelike structure in its bulk form and was recently isolated as a new member of two-dimensional monolayer materials. We investigated the electronic and optical properties of monolayer crystals of Mg(OH)(2) and WS2 and their possible heterobilayer structure by means of first-principles calculations. It was found that both monolayers of Mg(OH)(2) and WS2 are direct-gap semiconductors and these two monolayers form a typical van der Waals heterostructure with a weak interlayer interaction and a type-II band alignment with a staggered gap that spatially separates electrons and holes. We also showed that an out-of-plane electric field induces a transition from a staggered to a straddling-type heterojunction. Moreover, by solving the Bethe-Salpeter equation on top of single-shot G(0)W(0) calculations, we show that the low-energy spectrum of the heterobilayer is dominated by the intralyer excitons of the WS2 monolayer. Because of the staggered interfacial gap and the field-tunable energy-band structure, the Mg(OH)(2)-WS2 heterobilayer can become an important candidate for various optoelectronic device applications in nanoscale.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 38
DOI: 10.1103/PHYSREVB.94.195403
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“Spin-orbit-interaction induced singularity of the charge density relaxation propagator”. Badalyan SM, Matos-Abiague A, Fabian J, Vignale G, Peeters FM, Physical review : B : condensed matter and materials physics 88, 195402 (2013). http://doi.org/10.1103/PhysRevB.88.195402
Abstract: The charge density relaxation propagator of a two-dimensional electron system, which is the slope of the imaginary part of the polarization function, exhibits singularities for bosonic momenta having the order of the spin-orbit momentum and depending on the momentum orientation. We have provided an intuitive understanding for this nonanalytic behavior in terms of the interchirality subband electronic transitions, induced by the combined action of Bychkov-Rashba (BR) and Dresselhaus (D) spin-orbit coupling. It is shown that the regular behavior of the relaxation propagator is recovered in the presence of only one BR or D spin-orbit field or for spin-orbit interaction with equal BR and D coupling strengths. This creates a new possibility to influence carrier relaxation properties by means of an applied electric field.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 2
DOI: 10.1103/PhysRevB.88.195402
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“Electric-field control of the band gap and Fermi energy in graphene multilayers by top and back gates”. Avetisyan AA, Partoens B, Peeters FM, Physical review : B : solid state 80, 195401 (2009). http://doi.org/10.1103/PhysRevB.80.195401
Abstract: It is known that a perpendicular electric field applied to multilayers of graphene modifies the electronic structure near the K point and may induce an energy gap in the electronic spectrum which is tunable by the gate voltage. Here we consider a system of graphene multilayers in the presence of a positively charged top and a negatively charged back gate to control independently the density of electrons on the graphene layers and the Fermi energy of the system. The band structure of three- and four-layer graphene systems in the presence of the top and back gates is obtained using a tight-binding approach. A self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We predict that for opposite and equal charges on the top and bottom layers an energy gap is opened at the Fermi level. For an even number of layers this gap is larger than in the case of an odd number of graphene layers. We find that the circular asymmetry of the spectrum, which is a consequence of the trigonal warping, changes the size of the induced electronic gap, even when the total density of the induced electrons on the graphene layers is low.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 106
DOI: 10.1103/PhysRevB.80.195401
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“Currents in a many-particle parabolic quantum dot under a strong magnetic field”. Anisimovas E, Matulis A, Peeters FM, Physical review : B : condensed matter and materials physics 70, 195334 (2004). http://doi.org/10.1103/PhysRevB.70.195334
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.70.195334
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“Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field”. Sidor Y, Partoens B, Peeters FM, Maes J, Hayne M, Fuster D, González Y, González L, Moshchalkov VV, Physical review : B : condensed matter and materials physics 76, 195320 (2007). http://doi.org/10.1103/PhysRevB.76.195320
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 21
DOI: 10.1103/PhysRevB.76.195320
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“Control of the persistent currents in two interacting quantum rings through the Coulomb interaction and interring tunneling”. Castelano LK, Hai G-Q, Partoens B, Peeters FM, Physical review : B : solid state 78, 195315 (2008). http://doi.org/10.1103/PhysRevB.78.195315
Abstract: The persistent current in two vertically coupled quantum rings containing few electrons is studied. We find that the Coulomb interaction between the rings in the absence of tunneling affects the persistent current in each ring and the ground-state configurations. Quantum tunneling between the rings alters significantly the ground state and the persistent current in the system.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 28
DOI: 10.1103/PhysRevB.78.195315
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“All-electrical control of quantum gates for single heavy-hole spin qubits”. Szumniak P, Bednarek S, Pawlowski J, Partoens B, Physical review : B : condensed matter and materials physics 87, 195307 (2013). http://doi.org/10.1103/PhysRevB.87.195307
Abstract: In this paper several nanodevices which realize basic single heavy-hole qubit operations are proposed and supported by time-dependent self-consistent Poisson-Schrodinger calculations using a four band heavy-hole-light-hole model. In particular we propose a set of nanodevices which can act as Pauli X, Y, Z quantum gates and as a gate that acts similar to a Hadamard gate (i.e., it creates a balanced superposition of basis states but with an additional phase factor) on the heavy-hole spin qubit. We also present the design and simulation of a gated semiconductor nanodevice which can realize an arbitrary sequence of all these proposed single quantum logic gates. The proposed devices exploit the self-focusing effect of the hole wave function which allows for guiding the hole along a given path in the form of a stable solitonlike wave packet. Thanks to the presence of the Dresselhaus spin-orbit coupling, the motion of the hole along a certain direction is equivalent to the application of an effective magnetic field which induces in turn a coherent rotation of the heavy-hole spin. The hole motion and consequently the quantum logic operation is initialized only by weak static voltages applied to the electrodes which cover the nanodevice. The proposed gates allow for an all electric and ultrafast (tens of picoseconds) heavy-hole spin manipulation and give the possibility to implement a scalable architecture of heavy-hole spin qubits for quantum computation applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 14
DOI: 10.1103/PhysRevB.87.195307
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“Electroluminescence spectra of an STM-tip-induced quantum dot”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Kemerink M, Koenraad PM, Sauthoff K, Wolter JH, Physical review : B : condensed matter and materials physics 68, 195307 (2003). http://doi.org/10.1103/PhysRevB.68.195307
Keywords: A1 Journal article; Theory of quantum systems and complex systems; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 4
DOI: 10.1103/PhysRevB.68.195307
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“Oxidation of the GaAs(001) surface : insights from first-principles calculations”. Scarrozza M, Pourtois G, Houssa M, Heyns M, Stesmans A, Physical review : B : condensed matter and materials physics 85, 195307 (2012). http://doi.org/10.1103/PhysRevB.85.195307
Abstract: We performed a detailed investigation of the oxidation of the technologically relevant GaAs(001)-beta 2(2x4) surface via density functional calculations. The purpose is to gain insights on the atomistic mechanisms and local bondings that underlie the degradation of the surface properties once exposed to oxygen. The study comprises the adsorption of single O atoms, through the sampling of several adsorption sites, and the subsequent formation of the O adsorbate at increasing coverage by taking into account multiple-atom adsorption. Based on the evaluation of the energetics and the structural properties of the atomistic models generated, the results here reported delineate a consistent picture of the initial stage of the surface oxidation: (i) at low coverage, in the limit of single O insertions, oxygen is incorporated on the surface forming a twofold-bridging Ga-O-As bond; (ii) at increasing coverage, as multiple O atoms are involved, this is accompanied by the formation of a threefold-coordinated bond (with two Ga and one As atoms); (iii) the latter has important implications regarding the electronic properties of the adsorbate since this O bonding may result in the formation of As dangling bonds. Moreover, a clear trend of increased energy gain for the incorporation of neighboring O atoms compared to single O insertions indicates that the formation of oxide clusters is favored over a regime of uniform oxidation. Our findings provide a detailed description of the O bonding and stress the importance of modeling the adsorption of multiple O atoms for an accurate description of the surface oxidation.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.836
Times cited: 15
DOI: 10.1103/PhysRevB.85.195307
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“The 30-band k . p theory of valley splitting in silicon thin layers”. Cukaric NA, Partoens B, Tadic MZ, Arsoski VV, Peeters FM, Journal of physics : condensed matter 28, 195303 (2016). http://doi.org/10.1088/0953-8984/28/19/195303
Abstract: The valley splitting of the conduction-band states in a thin silicon-on-insulator layer is investigated using the 30-band k . p theory. The system composed of a few nm thick Si layer embedded within thick SiO2 layers is analyzed. The valley split states are found to cross periodically with increasing quantum well width, and therefore the energy splitting is an oscillatory function of the quantum well width, with period determined by the wave vector K-0 of the conduction band minimum. Because the valley split states are classified by parity, the optical transition between the ground hole state and one of those valley split conduction band states is forbidden. The oscillations in the valley splitting energy decrease with electric field and with smoothing of the composition profile between the well and the barrier by diffusion of oxygen from the SiO2 layers to the Si quantum well. Such a smoothing also leads to a decrease of the interband transition matrix elements. The obtained results are well parametrized by the effective two-valley model, but are found to disagree from previous 30-band calculations. This discrepancy could be traced back to the fact that the basis for the numerical solution of the eigenproblem must be restricted to the first Brillouin zone in order to obtain quantitatively correct results for the valley splitting.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
DOI: 10.1088/0953-8984/28/19/195303
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“Binding of electrons, holes, and excitons in symmetric strained InP/ In0.49Ga0.51P triple quantum-dot molecules”. Tadić, M, Peeters FM, Physical review : B : condensed matter and materials physics 70, 195302 (2004). http://doi.org/10.1103/PhysRevB.70.195302
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 12
DOI: 10.1103/PhysRevB.70.195302
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“Giant magnetic anisotropy in doped single layer molybdenum disulfide and fluorographene”. Sivek J, Sahin H, Partoens B, Peeters FM, Journal of physics : condensed matter 28, 195301 (2016). http://doi.org/10.1088/0953-8984/28/19/195301
Abstract: Stable monolayer materials based on existing, well known and stable two-dimensional crystal fluorographene and molybdenum disulfide are predicted to exhibit a huge magnetocrystalline anisotropy when functionalized with adsorbed transition metal atoms at vacant sides. Ab initio calculations within the density-functional theory formalism were performed to investigate the adsorption of the transitional metals in a single S (or F) vacancy of monolayer molybdenum disulfide (or fluorographene). We found strong bonding of the transitional metal atoms to the vacant sites with binding energies ranging from 2.5 to 5.2 eV. Our calculations revealed that these systems with adsorbed metal atoms exhibit a magnetic anisotropy, specifically the structures including Os and Ir show a giant magnetocrystalline anisotropy energy of 31-101 meV. Our results demonstrate the possibility of obtaining stable monolayer materials with huge magnetocrystalline anisotropy based on preexisting, well known and stable two-dimensional crystals: fluorographene and molybdenum disulfide. We believe that the results obtained here are useful not only for deeper understanding of the origin of magnetocrystalline anisotropy but also for the design of monolayer optoelectronic devices with novel functionalities.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 7
DOI: 10.1088/0953-8984/28/19/195301
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“Double-exchange mechanisms for Mn-doped III-V ferromagnetic semiconductors”. Krstajić, PM, Peeters FM, Ivanov VA, Fleurov V, Kikoin K, Physical review : B : condensed matter and materials physics 70, 195215 (2004). http://doi.org/10.1103/PhysRevB.70.195215
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 115
DOI: 10.1103/PhysRevB.70.195215
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“Comprehensive investigation of the extremely low lattice thermal conductivity and thermoelectric properties of BaIn₂Te₄”. Gurel T, Altunay YA, Bulut P, Yildirim S, Sevik C, Physical review B 106, 195204 (2022). http://doi.org/10.1103/PHYSREVB.106.195204
Abstract: Recently, an extremely low lattice thermal conductivity value has been reported for the alkali-based telluride material BaIn2Te4. The value is comparable with low-thermal conductivity metal chalcogenides, and the glass limit is highly intriguing. Therefore, to shed light on this issue, we performed first-principles phonon thermal transport calculations. We predicted highly anisotropic lattice thermal conductivity along different directions via the solution of the linearized phonon Boltzmann transport equation. More importantly, we determined several different factors as the main sources of the predicted ultralow lattice thermal conductivity of this crystal, such as the strong interactions between low-frequency optical phonons and acoustic phonons, small phonon group velocities, and lattice anharmonicity indicated by large negative mode Gruneisen parameters. Along with thermal transport calculations, we also investigated the electronic transport properties by accurately calculating the scattering mechanisms, namely the acoustic deformation potential, ionized impurity, and polar optical scatterings. The inclusion of spin-orbit coupling (SOC) for electronic structure is found to strongly affect the p-type Seebeck coefficients. Finally, we calculated the thermoelectric properties accurately, and the optimal ZT value of p-type doping, which originated from high Seebeck coefficients, was predicted to exceed unity after 700 K and have a direction averaged value of 1.63 (1.76 in the y-direction) at 1000 K around 2 x 1020 cm-3 hole concentration. For n-type doping, a ZT around 3.2 x 1019 cm-3 concentration was predicted to be a direction-averaged value of 1.40 (1.76 in the z-direction) at 1000 K, mostly originating from its high electron mobility. With the experimental evidence of high thermal stability, we showed that the BaIn2Te4 compound has the potential to be a promising mid- to high-temperature thermoelectric material for both p-type and n-type systems with appropriate doping.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.7
DOI: 10.1103/PHYSREVB.106.195204
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“Computational study of the CF4 /CHF3 / H2 /Cl2 /O2 /HBr gas phase plasma chemistry”. Tinck S, Bogaerts A, Journal of physics: D: applied physics 49, 195203 (2016). http://doi.org/10.1088/0022-3727/49/19/195203
Abstract: A modelling study is performed of high-density low-pressure inductively coupled CF4/CHF3/H2/Cl2/O2/HBr plasmas under different gas mixing ratios. A reaction set describing the complete plasma chemistry is presented and discussed. The gas fraction of each component in this mixture is varied to investigate the sensitivity of the plasma properties, like electron density, plasma potential and species densities, towards the gas mixing ratios. This research is of great interest for microelectronics applications because these gases are often combined in two (or more)-component mixtures, and mixing gases or changing the fraction of a gas can sometimes yield unwanted reaction products or unexpected changes in the overall plasma properties due to the increased chemical complexity of the system. Increasing the CF4 fraction produces more F atoms for chemical etching as expected, but also more prominently lowers the density of Cl atoms, resulting in an actual drop in the etch rate under certain conditions. Furthermore, CF4 decreases the free electron density when mixed with Cl2. However, depending on the other gas components, CF4 gas can also sometimes enhance free electron density. This is the case when HBr is added to the mixture. The addition of H2 to the gas mixture will lower the sputtering process, not only due to the lower overall positive ion density at higher H2 fractions, but also because more H+, H2 + and H3 + are present and they have very low sputter yields. In contrast, a larger Cl2 fraction results in more chemical etching but also in less physical sputtering due to a smaller abundance of positive ions. Increasing the O2 fraction in the plasma will always lower the etch rate due to more oxidation of the wafer surface and due to a lower plasma density. However, it is also observed that the density of F atoms can actually increase with rising O2 gas fraction. This is relevant to note because the exact balance between fluorination and oxidation is important for fine-tuning the overall etch rate and for control of the sidewall profile. Finally, HBr is often used as a chemical etcher, but when mixed with F- or Cl-containing gases, HBr creates the same diluting effects as Ar or He, because a
higher fraction results in less chemical etching but more (physical) sputtering.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.588
Times cited: 5
DOI: 10.1088/0022-3727/49/19/195203
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“Thermoelectric properties and scattering mechanisms in natural PbS”. Zuniga-Puelles E, Levytskyi V, Özden A, Guerel T, Bulut N, Himcinschi C, Sevik C, Kortus J, Gumeniuk R, Physical review B 107, 195203 (2023). http://doi.org/10.1103/PHYSREVB.107.195203
Abstract: X-ray diffraction and energy dispersive x-ray spectroscopic analyses showed a natural galena (PbS) crystal from Freiberg in Saxony (Germany) to be a single phase specimen [rock salt (NaCl) structure type, space group Fm3m, a = 5.932(1) angstrom] with stoichiometric composition and an enhanced dislocation density (8 approximate to 1011 cm-2). The latter parameter leads to an increase of the electrical resistivity in the high-temperature regime, as well as to the appearance of phonon resonance with a characteristic frequency coPR = 3.8(1) THz. Being in the same range (i.e., 3-5.5 THz) with the sulfur optical modes of highest group velocities, it results in a drastic reduction (by similar to 75%) of thermal conductivity (K) at lower temperatures (i.e., < 100 K), as well as in the appearance of a characteristic minimum in K at T approximate to 30 K. Furthermore, the studied galena is characterized by phonon-drag behavior and by temperature dependent switch of the charge carrier scattering mechanism regime (i.e., scattering on dislocations for T < 100 K, on acoustic phonons for 100 K < T < 170 K and on both acoustic and optical phonons for 170 K < T < 300 K). The combined theoretical calculation and optical spectroscopic study confirm this mineral to be a direct gap degenerate semiconductor. The possible origins of the second-order Raman spectrum are discussed.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.7
DOI: 10.1103/PHYSREVB.107.195203
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“Atomically resolved EELS mapping of the interfacial structure of epitaxially strained LaNiO3/LaAlO3 superlattices”. N Gauquelin E Benckiser M K Kinyanjui M Wu Y Lu G Christiani G Logvenov H-U Habermeier U Kaiser B Keimer and G A Botton, Physical Review B 90, 195140 (2014). http://doi.org/10.1103/PhysRevB.90.195140
Abstract: The interfacial atomic structure of a metallic LaNiO3/LaAlO3 superlattice grown on a LaSrAlO4 substrate was
investigated using a combination of atomically resolved electron energy loss spectroscopy (EELS) at the Al K,
Al L2,3, Sr L2,3, Ni L2,3, La M4,5, and O K edges as well as hybridization mapping of selected features of the O
K-edge fine structure.We observe an additional La1−xSrxAl1−yNiyO3 layer at the substrate-superlattice interface,
possibly linked to diffusion of Al and Sr into the growing film or a surface reconstruction due to Sr segregation.
The roughness of the LaNiO3/LaAlO3 interfaces is found to be on average around one pseudocubic unit cell. The
O K-edge EELS spectra revealed reduced spectral weight of the prepeak derived from Ni-O hybridized states in
the LaNiO3 layers. We rule out oxygen nonstoichiometry of the LaNiO3 layers and discuss changes in the Ni-O
hybridization due to heterostructuring as possible origin.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Times cited: 17
DOI: 10.1103/PhysRevB.90.195140
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“Retrieving the dielectric function of diamond from valence electron energy-loss spectroscopy”. Zhang L, Erni R, Verbeeck J, Van Tendeloo G, Physical review : B : condensed matter and materials physics 77, 195119 (2008). http://doi.org/10.1103/PhysRevB.77.195119
Abstract: A data-acquisition and data-processing method is proposed that aims at minimizing the effect of retardation on the Kramers-Kronig analysis of valence electron energy-loss spectra. This method is applied to diamond, which, due to its high dielectric constant, is a material that shows strong retardation effects and thus is a challenging material to be studied by valence electron energy-loss spectroscopy. The results obtained show a significant improvement but still show small discrepancies with respect to optical data, which are most likely due to the residual retardation contributions and the fact that nonzero momentum transfers are measured.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 16
DOI: 10.1103/PhysRevB.77.195119
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“High Chern number in strained thin films of dilute magnetic topological insulators”. Shafiei M, Fazileh F, Peeters FM, Milošević, MV, Physical review B 107, 195119 (2023). http://doi.org/10.1103/PHYSREVB.107.195119
Abstract: The quantum anomalous Hall effect was first observed experimentally by doping the Bi2Se3 materials family with chromium, where 5% doping induces an exchange field of around 0.1 eV. In ultrathin films, a topological phase transition from a normal insulator to a Chern insulator can be induced with an exchange field proportional to the hybridization gap. Subsequent transitions to states with higher Chern numbers require an exchange field larger than the (bulk) band gap, but are prohibited in practice by the detrimental effects of higher doping levels. Here, we show that threshold doping for these phase transitions in thin films is controllable by strain. As a consequence, higher Chern states can be reached with experimentally feasible doping, sufficiently dilute for the topological insulator to remain structurally stable. Such a facilitated realization of higher Chern insulators opens prospects for multichannel quantum computing, higher-capacity circuit interconnects, and energy-efficient electronic devices at elevated temperatures.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.7
DOI: 10.1103/PHYSREVB.107.195119
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“Hidden symmetries of electronic transport in a disordered one-dimensional lattice”. Kim W, Covaci L, Marsiglio F, Physical Review B 73, 195109 (2006). http://doi.org/10.1103/PhysRevB.73.195109
Abstract: Correlated, or extended, impurities play an important role in the transport properties of dirty metals. Here, we examine, in the framework of a tight-binding lattice, the transmission of a single electron through an array of correlated impurities. In particular we show that particles transmit through an impurity array in identical fashion, regardless of the direction of traversal. The demonstration of this fact is straightforward in the continuum limit, but requires a detailed proof for the discrete lattice. We also briefly demonstrate and discuss the time evolution of these scattering states, to delineate regions (in time and space) where the aforementioned symmetry is violated.
Keywords: A1 Journal article
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PhysRevB.73.195109
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“Impact of spin-orbit coupling on the Holstein polaron”. Li Z, Covaci L, Berciu M, Baillie D, Marsiglio F, Physical review : B : condensed matter and materials physics 83, 195104 (2011). http://doi.org/10.1103/PhysRevB.83.195104
Abstract: We utilize an exact variational numerical procedure to calculate the ground state properties of a polaron in the presence of a Rashba-like spin-orbit interaction. Our results corroborate previous work performed with the momentum average approximation and with weak-coupling perturbation theory. We find that spin-orbit coupling increases the effective mass in the regime with weak electron-phonon coupling, and decreases the effective mass in the regimes of intermediate and strong electron-phonon coupling. Analytical strong-coupling perturbation theory results confirm our numerical results in the small-polaron regime. A large amount of spin-orbit coupling can lead to a significant lowering of the polaron effective mass.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PhysRevB.83.195104
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“Computer modelling of magnetron discharges”. Bogaerts A, Bultinck E, Kolev I, Schwaederlé, L, van Aeken K, Buyle G, Depla D, Journal of physics: D: applied physics 42, 194018 (2009). http://doi.org/10.1088/0022-3727/42/19/194018
Abstract: In this paper, some modelling approaches to describe direct current (dc) magnetron discharges developed in our research groups will be presented, including an analytical model, Monte Carlo simulations for the electrons and for the sputtered atoms, a hybrid Monte Carlo-fluid model and particle-in-cell-Monte Carlo collision simulations. The strengths and limitations of the various modelling approaches will be explained, and some characteristic simulation results will be illustrated. Furthermore, some other simulation methods related to the magnetron device will be briefly explained, more specifically for calculating the magnetic field distribution inside the discharge, and for describing the (reactive) sputtering.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.588
Times cited: 32
DOI: 10.1088/0022-3727/42/19/194018
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“Skyrmion-induced bound states on the surface of three-dimensional topological insulators”. Andrikopoulos D, Sorée B, De Boeck J, Journal of applied physics 119, 193903 (2016). http://doi.org/10.1063/1.4950759
Abstract: The interaction between the surface of a 3D topological insulator and a skyrmion/anti-skyrmion structure is studied in order to investigate the possibility of electron confinement due to the skyrmion presence. Both hedgehog (Neel) and vortex (Bloch) skyrmions are considered. For the hedgehog skyrmion, the in-plane components cannot be disregarded and their interaction with the surface state of the topological insulator (TI) has to be taken into account. A semi-classical description of the skyrmion chiral angle is obtained using the variational principle. It is shown that both the hedgehog and the vortex skyrmion can induce bound states on the surface of the TI. However, the number and the properties of these states depend strongly on the skyrmion type and the skyrmion topological number N-Sk. The probability densities of the bound electrons are also derived where it is shown that they are localized within the skyrmion region. Published by AIP Publishing.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 8
DOI: 10.1063/1.4950759
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“Graphene hall bar with an asymmetric pn-junction”. Milovanovic SP, Masir MR, Peeters FM, Journal of applied physics 113, 193701 (2013). http://doi.org/10.1063/1.4805350
Abstract: We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates and Hall type of plateaus are formed. These plateaus occur as a consequence of the restriction on the angle imposed by Snell's law allowing only electrons with a certain initial angles to transmit though the potential step. The size of the plateau and its position is determined by the position of the potential interface as well as the value of the applied potential. When the second region is p-type, the bend resistance dominates, which is asymmetric in field due to the presence of snake states. Changing the position of the pn-interface in the Hall bar strongly affects these states and therefore the bend resistance is also changed. Changing the applied potential, we observe that the bend resistance exhibits a peak around the charge-neutrality point (CNP), which is independent of the position of the pn-interface, while the Hall resistance shows a sign reversal when the CNP is crossed, which is in very good agreement with a recent experiment [J. R. Williams and C. M. Marcus, Phys. Rev. Lett. 107, 046602 (2011)].
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 7
DOI: 10.1063/1.4805350
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“A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors”. Vandenberghe WG, Verhulst AS, Kao K-H, De Meyer K, Sorée B, Magnus W, Groeseneken G, Applied physics letters 100, 193509 (2012). http://doi.org/10.1063/1.4714544
Abstract: We develop a model for the tunnel field-effect transistor (TFET) based on the Wentzel-Kramer-Brillouin approximation which improves over existing semi-classical models employing generation rates. We hereby introduce the concept of a characteristic tunneling length in direct semiconductors. Based on the model, we show that a limited density of states results in an optimal doping concentration as well as an optimal material's band gap to obtain the highest TFET on-current at a given supply voltage. The observed optimal-doping trend is confirmed by 2-dimensional quantum-mechanical simulations for silicon and germanium. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714544]
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 25
DOI: 10.1063/1.4714544
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“Graphene ribbons with a line of impurities: oOpening of a gap”. Costa Filho RN, Farias GA, Peeters FM, Physical review : B : condensed matter and materials physics 76, 193409 (2007). http://doi.org/10.1103/PhysRevB.76.193409
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 49
DOI: 10.1103/PhysRevB.76.193409
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“Particle layering in the ceramic-metal thin film Pt-Al2O3”. Gibaud A, Hazra S, Sella C, Laffez P, Désert A, Naudon A, Van Tendeloo G, Physical review : B : condensed matter and materials physics 63, 193407 (2001). http://doi.org/10.1103/PhysRevB.63.193407
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 25
DOI: 10.1103/PhysRevB.63.193407
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“Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference”. Compemolle S, Pourtois G, Sorée B, Magnus W, Chibotaru LF, Ceulemans A, Physical review : B : condensed matter and materials physics 77, 193406 (2008). http://doi.org/10.1103/PhysRevB.77.193406
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.77.193406
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“Normal and Dirac fermions in graphene multilayers: tight-binding description of the electronic structure”. Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 75, 193402 (2007). http://doi.org/10.1103/PhysRevB.75.193402
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 130
DOI: 10.1103/PhysRevB.75.193402
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