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Author |
Title |
Year |
Publication |
Volume |
Times cited |
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Links |
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van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; Van Hove, M.; Borghs, G. |
Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si \delta-doping layer |
1995 |
Physical review : B : condensed matter and materials physics |
52 |
43 |
UA library record; WoS full record; WoS citing articles |
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Van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; Van de Graaf, W.; Borghs, G. |
Cyclotron-resonance of 2d electrons at Si-\delta-doped InSb layers grown on GaAs |
1995 |
Physica: B : condensed matter |
211 |
2 |
UA library record; WoS full record; WoS citing articles |
|
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Cheng, K.; Degroote, S.; Leys, M.; van Daele, B.; Germain, M.; Van Tendeloo, G.; Borghs, G. |
Single crystalline GaN grown on porous Si(111) by MOVPE |
2007 |
Physica status solidi: C: conferences and critical reviews |
4 |
2 |
UA library record; WoS full record; WoS citing articles |
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Cheng, K.; Leys, M.; Degroote, S.; van Daele, B.; Boeykens, S.; Derluyn, J.; Germain, M.; Van Tendeloo, G.; Engelen, J.; Borghs, G. |
Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers |
2006 |
Journal of electronic materials |
35 |
102 |
UA library record; WoS full record; WoS citing articles |
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van der Burgt, M.; van Esch, A.; Peeters, F.M.; van Hove, M.; Borghs, G.; Herlach, F. |
High field transport in high carrier density GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructures |
1993 |
Physica: B : condensed matter |
184 |
4 |
UA library record; WoS full record; WoS citing articles |
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Das, A.; Gordon, I.; Wagner, P.; Cannaerts, M.; Moshchalkov, V.V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Borghs, G. |
Influence of the morphology on the magneto-transport properties of laser-ablated ultrathin La0.7Ba0.3MnO3 films |
2001 |
Journal of applied physics |
90 |
2 |
UA library record; WoS full record; WoS citing articles |
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Gordon, I.; Wagner, P.; Das, A.; Vanacken, J.; Moshchalkov, V.V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Ziese, M.; Borghs, G. |
Comparative Hall studies in the electron- and hole-doped manganites La0.33Ca0.67MnO3 and La0.70Ca0.30MnO3 |
2000 |
Physical review : B : condensed matter and materials physics |
62 |
18 |
UA library record; WoS full record; WoS citing articles |
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Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
1992 |
Applied physics letters |
600 |
32 |
UA library record; WoS full record; WoS citing articles |
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Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
1992 |
Applied physics letters |
60 |
20 |
UA library record; WoS full record; WoS citing articles |
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de Keyser, A.; Bogaerts, R.; Karavolas, V.C.; van Bockstal, L.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs |
1996 |
Solid state electronics |
40 |
2 |
UA library record; WoS full record; WoS citing articles |
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van Oeffelen, L.; Van Roy, W.; Idrissi, H.; Charlier, D.; Lagae, L.; Borghs, G. |
Ion current rectification, limiting and overlimiting conductances in nanopores |
2015 |
PLoS ONE |
10 |
11 |
UA library record; WoS full record; WoS citing articles |
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de Keyser, A.; Bogaerts, R.; van Bockstal, L.; Hoeks, W.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
Magnetotransport properties of Si-δ-doped InSb layers grown on GaAs |
1995 |
Physica: B : condensed matter |
211 |
2 |
UA library record; WoS full record; WoS citing articles |
|
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Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
HREM investigation of a Fe/GaN/Fe tunnel junction |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
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UA library record; WoS full record; |
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Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. |
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers |
2004 |
Materials Research Society symposium proceedings |
798 |
|
UA library record |
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de Keyser, A.; Bogaerts, R.; van Bockstal, L.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
Modification of the 2D electronic properties in Si-δ-doped InSb due to surface effects |
1997 |
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UA library record |
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Bogaerts, R.; de Keyser, A.; van Bockstal, L.; van der Burgt, M.; van Esch, A.; Provoost, R.; Silverans, R.; Herlach, F.; Swinnen, B.; van de Stadt, A.F.W.; Koenraad, P.M.; Wolter, J.H.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
2D semiconductors at the Leuven pulsed field facility |
1997 |
Physicalia magazine |
19 |
|
UA library record |
|
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van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
Cyclotron-resonance of 2D electrons at Si-δ-doped InSb layers grown on GaAs |
1995 |
Physica: B : condensed matter |
211 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
Bogaerts, R.; de Keyser, A.; van Bockstal, L.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; Borghs, G. |
Magnetic freeze-out induced transition from three- to two-dimensional magnetotransport in Si-δ-doped InSb layers grown on GaAs |
1995 |
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UA library record |
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van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; van Hove, M.; Borghs, G. |
High field magnetotransport in a Ga0.8In0.2As quantum well with a parallel δ-layer |
1995 |
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UA library record |
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van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; van Hove, M.; Borghs, G. |
Magnetotransport in a pseudomorhic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer |
1995 |
Physical review : B : condensed matter and materials physics |
52 |
35 |
UA library record; WoS full record; WoS citing articles |
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