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Records |
Links |
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Author |
van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; van Hove, M.; Borghs, G. |
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Title |
Magnetotransport in a pseudomorhic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
52 |
Issue |
|
Pages |
12218-12231 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lancaster, Pa |
Editor |
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Language |
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Wos |
A1995TB96600102 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
1098-0121; 0163-1829 |
ISBN |
|
Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.736 |
Times cited |
35 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:12192 |
Serial |
1932 |
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Permanent link to this record |
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Author |
van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; van Hove, M.; Borghs, G. |
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|
Title |
High field magnetotransport in a Ga0.8In0.2As quantum well with a parallel δ-layer |
Type |
P3 Proceeding |
|
Year |
1995 |
Publication |
|
Abbreviated Journal |
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|
Volume |
|
Issue |
|
Pages |
588-591 |
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Keywords |
P3 Proceeding; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
World Scientific |
Place of Publication |
Singapore |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
PHYSICS, APPLIED 28/145 Q1 # |
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Call Number |
UA @ lucian @ c:irua:12206 |
Serial |
1431 |
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Permanent link to this record |
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Author |
Bogaerts, R.; de Keyser, A.; van Bockstal, L.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; Borghs, G. |
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Title |
Magnetic freeze-out induced transition from three- to two-dimensional magnetotransport in Si-δ-doped InSb layers grown on GaAs |
Type |
P3 Proceeding |
|
Year |
1995 |
Publication |
|
Abbreviated Journal |
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Volume |
|
Issue |
|
Pages |
706-709 |
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Keywords |
P3 Proceeding; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
World Scientific |
Place of Publication |
Singapore |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record |
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Impact Factor |
|
Times cited |
|
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:12209 |
Serial |
1881 |
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Permanent link to this record |
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Author |
van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
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|
Title |
Cyclotron-resonance of 2D electrons at Si-δ-doped InSb layers grown on GaAs |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Physica: B : condensed matter |
Abbreviated Journal |
Physica B |
|
|
Volume |
211 |
Issue |
|
Pages |
455-457 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
|
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|
Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Amsterdam |
Editor |
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|
Language |
|
Wos |
A1995RD54400118 |
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0921-4526 |
ISBN |
|
Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.319 |
Times cited |
2 |
Open Access |
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|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:13038 |
Serial |
600 |
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Permanent link to this record |
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Author |
Bogaerts, R.; de Keyser, A.; van Bockstal, L.; van der Burgt, M.; van Esch, A.; Provoost, R.; Silverans, R.; Herlach, F.; Swinnen, B.; van de Stadt, A.F.W.; Koenraad, P.M.; Wolter, J.H.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
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Title |
2D semiconductors at the Leuven pulsed field facility |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Physicalia magazine |
Abbreviated Journal |
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|
|
Volume |
19 |
Issue |
|
Pages |
229-239 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Gent |
Editor |
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Language |
|
Wos |
|
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0770-0520 |
ISBN |
|
Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record |
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Impact Factor |
|
Times cited |
|
Open Access |
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|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:19257 |
Serial |
7 |
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Permanent link to this record |
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Author |
de Keyser, A.; Bogaerts, R.; van Bockstal, L.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
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|
Title |
Modification of the 2D electronic properties in Si-δ-doped InSb due to surface effects |
Type |
P3 Proceeding |
|
Year |
1997 |
Publication |
|
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
|
Pages |
383-386 |
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Keywords |
P3 Proceeding; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
World Scientific |
Place of Publication |
Singapore |
Editor |
|
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|
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
|
ISBN |
|
Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:19303 |
Serial |
2158 |
|
Permanent link to this record |
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Author |
Germain, M.; Leys, M.; Boeykens, S.; Degroote, S.; Wang, W.; Schreurs, D.; Ruythooren, W.; Choi, K.-H.; van Daele, B.; Van Tendeloo, G.; Borghs, G. |
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Title |
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers |
Type |
P1 Proceeding |
|
Year |
2004 |
Publication |
Materials Research Society symposium proceedings |
Abbreviated Journal |
|
|
|
Volume |
798 |
Issue |
|
Pages |
Y10.22,1-6 |
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|
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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|
Abstract |
|
|
|
Address |
|
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Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Wuhan |
Editor |
|
|
|
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0272-9172 |
ISBN |
|
Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:54861 |
Serial |
1424 |
|
Permanent link to this record |
|
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|
|
Author |
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
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|
Title |
HREM investigation of a Fe/GaN/Fe tunnel junction |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
169 |
Pages |
53-56 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
IOP Publishing |
Place of Publication |
Bristol |
Editor |
|
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Language |
|
Wos |
|
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0-7503-0818-4 |
ISBN |
|
Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:95715 |
Serial |
1503 |
|
Permanent link to this record |
|
|
|
|
Author |
de Keyser, A.; Bogaerts, R.; van Bockstal, L.; Hoeks, W.; Herlach, F.; Karavolas, V.C.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Magnetotransport properties of Si-δ-doped InSb layers grown on GaAs |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Physica: B : condensed matter |
Abbreviated Journal |
Physica B |
|
|
Volume |
211 |
Issue |
|
Pages |
455-457 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1995RD54400118 |
Publication Date |
2003-05-01 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0921-4526; |
ISBN |
|
Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.319 |
Times cited |
2 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:12210 |
Serial |
1936 |
|
Permanent link to this record |
|
|
|
|
Author |
van Oeffelen, L.; Van Roy, W.; Idrissi, H.; Charlier, D.; Lagae, L.; Borghs, G. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
Ion current rectification, limiting and overlimiting conductances in nanopores |
Type |
A1 Journal article |
|
Year |
2015 |
Publication |
PLoS ONE |
Abbreviated Journal |
Plos One |
|
|
Volume |
10 |
Issue |
10 |
Pages |
e0124171 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Previous reports on Poisson-Nernst-Planck (PNP) simulations of solid-state nanopores have focused on steady state behaviour under simplified boundary conditions. These are Neumann boundary conditions for the voltage at the pore walls, and in some cases also Donnan equilibrium boundary conditions for concentrations and voltages at both entrances of the nanopore. In this paper, we report time-dependent and steady state PNP simulations under less restrictive boundary conditions, including Neumann boundary conditions applied throughout the membrane relatively far away from the nanopore. We simulated ion currents through cylindrical and conical nanopores with several surface charge configurations, studying the spatial and temporal dependence of the currents contributed by each ion species. This revealed that, due to slow co-diffusion of oppositely charged ions, steady state is generally not reached in simulations or in practice. Furthermore, it is shown that ion concentration polarization is responsible for the observed limiting conductances and ion current rectification in nanopores with asymmetric surface charges or shapes. Hence, after more than a decade of collective research attempting to understand the nature of ion current rectification in solid-state nanopores, a relatively intuitive model is retrieved. Moreover, we measured and simulated current-voltage characteristics of rectifying silicon nitride nanopores presenting overlimiting conductances. The similarity between measurement and simulation shows that overlimiting conductances can result from the increased conductance of the electric double-layer at the membrane surface at the depletion side due to voltage-induced polarization charges. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
|
Editor |
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Language |
|
Wos |
000354916100012 |
Publication Date |
2015-05-15 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1932-6203; |
ISBN |
|
Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.806 |
Times cited |
11 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.806; 2015 IF: 3.234 |
|
|
Call Number |
c:irua:126366 |
Serial |
1744 |
|
Permanent link to this record |
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|
|
|
Author |
de Keyser, A.; Bogaerts, R.; Karavolas, V.C.; van Bockstal, L.; Herlach, F.; Peeters, F.M.; van de Graaf, W.; Borghs, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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|
Title |
Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Solid state electronics |
Abbreviated Journal |
Solid State Electron |
|
|
Volume |
40 |
Issue |
|
Pages |
395-398 |
|
|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
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|
Publisher |
|
Place of Publication |
Oxford |
Editor |
|
|
|
Language |
|
Wos |
A1996UN20700083 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0038-1101; |
ISBN |
|
Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.504 |
Times cited |
2 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:15817 |
Serial |
1705 |
|
Permanent link to this record |
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|
|
Author |
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
Type |
A1 Journal article |
|
Year |
1992 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
60 |
Issue |
|
Pages |
868-870 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
|
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|
Address |
|
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Corporate Author |
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Thesis |
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|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
A1992HD74800027 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.302 |
Times cited |
20 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:4089 |
Serial |
1590 |
|
Permanent link to this record |
|
|
|
|
Author |
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
|
|
Title |
InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy |
Type |
A1 Journal article |
|
Year |
1992 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
|
Volume |
600 |
Issue |
26 |
Pages |
3256-3258 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
A1992JA80600019 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.302 |
Times cited |
32 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:4102 |
Serial |
1591 |
|
Permanent link to this record |
|
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|
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Author |
Gordon, I.; Wagner, P.; Das, A.; Vanacken, J.; Moshchalkov, V.V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Ziese, M.; Borghs, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Comparative Hall studies in the electron- and hole-doped manganites La0.33Ca0.67MnO3 and La0.70Ca0.30MnO3 |
Type |
A1 Journal article |
|
Year |
2000 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
|
|
Volume |
62 |
Issue |
17 |
Pages |
11633-11638 |
|
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lancaster, Pa |
Editor |
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Language |
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Wos |
000165201900064 |
Publication Date |
2002-07-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0163-1829;1095-3795; |
ISBN |
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Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.836 |
Times cited |
18 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.836; 2000 IF: NA |
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Call Number |
UA @ lucian @ c:irua:54734 |
Serial |
417 |
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Permanent link to this record |
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Author |
Das, A.; Gordon, I.; Wagner, P.; Cannaerts, M.; Moshchalkov, V.V.; Bruynseraede, Y.; Schuddinck, W.; Van Tendeloo, G.; Borghs, G. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
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Title |
Influence of the morphology on the magneto-transport properties of laser-ablated ultrathin La0.7Ba0.3MnO3 films |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
90 |
Issue |
3 |
Pages |
1429-1435 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000169868300052 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
2 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.068; 2001 IF: 2.128 |
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Call Number |
UA @ lucian @ c:irua:54816 |
Serial |
1649 |
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Permanent link to this record |
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Author |
van der Burgt, M.; van Esch, A.; Peeters, F.M.; van Hove, M.; Borghs, G.; Herlach, F. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
High field transport in high carrier density GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructures |
Type |
A1 Journal article |
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Year |
1993 |
Publication |
Physica: B : condensed matter |
Abbreviated Journal |
Physica B |
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Volume |
184 |
Issue |
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Pages |
211-215 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1993KU62100042 |
Publication Date |
2002-10-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0921-4526; |
ISBN |
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Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.319 |
Times cited |
4 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:5792 |
Serial |
1432 |
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Permanent link to this record |
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Author |
Cheng, K.; Leys, M.; Degroote, S.; van Daele, B.; Boeykens, S.; Derluyn, J.; Germain, M.; Van Tendeloo, G.; Engelen, J.; Borghs, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers |
Type |
A1 Journal article |
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Year |
2006 |
Publication |
Journal of electronic materials |
Abbreviated Journal |
J Electron Mater |
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Volume |
35 |
Issue |
4 |
Pages |
592-598 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Boston, Mass. |
Editor |
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Language |
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Wos |
000237101800016 |
Publication Date |
2007-04-16 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0361-5235;1543-186X; |
ISBN |
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Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.579 |
Times cited |
102 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.579; 2006 IF: 1.504 |
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Call Number |
UA @ lucian @ c:irua:58238 |
Serial |
1223 |
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Permanent link to this record |
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Author |
Cheng, K.; Degroote, S.; Leys, M.; van Daele, B.; Germain, M.; Van Tendeloo, G.; Borghs, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Single crystalline GaN grown on porous Si(111) by MOVPE |
Type |
P1 Proceeding |
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Year |
2007 |
Publication |
Physica status solidi: C: conferences and critical reviews |
Abbreviated Journal |
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Volume |
4 |
Issue |
6 |
Pages |
1908-1912 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
In this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 mu m to 10 mu m, were investigated. The morphology of the GaN surfaces was analyzed by optical interference microscopy. The crystalline quality of the epitaxial layers was characterized by High Resolution X-Ray Diffraction (HR-XRD) and cross-sectional Transmission Electron Microscopy (TEM). A Full Width at Half Maximum (FWHM) of the X-ray symmetric rocking curve (0002) 2 theta – omega scan of 290 arc see was obtained for a 1 mu m thick GaN layer, which is comparable with that of GaN grown on bulk Si(111) substrates. (c) 2007 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim. |
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Address |
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Corporate Author |
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Publisher |
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Place of Publication |
Berlin |
Editor |
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Language |
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Wos |
000247421800020 |
Publication Date |
2007-05-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1610-1634;1610-1642; |
ISBN |
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Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
2 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:94664 |
Serial |
3019 |
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Permanent link to this record |
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Author |
Van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; Van de Graaf, W.; Borghs, G. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
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Title |
Cyclotron-resonance of 2d electrons at Si-\delta-doped InSb layers grown on GaAs |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Physica: B : condensed matter |
Abbreviated Journal |
Physica B |
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Volume |
211 |
Issue |
1-4 |
Pages |
466-469 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1995RD54400121 |
Publication Date |
2003-05-01 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0921-4526; |
ISBN |
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Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.319 |
Times cited |
2 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:95914 |
Serial |
601 |
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Permanent link to this record |
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Author |
van der Burgt, M.; Karavolas, V.C.; Peeters, F.M.; Singleton, J.; Nicholas, R.J.; Herlach, F.; Harris, J.J.; Van Hove, M.; Borghs, G. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
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Title |
Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si \delta-doping layer |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
52 |
Issue |
16 |
Pages |
12218-12231 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
A1995TB96600102 |
Publication Date |
2002-07-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0163-1829;1095-3795; |
ISBN |
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Additional Links ![sorted by Additional Links field, ascending order (up)](img/sort_asc.gif) |
UA library record; WoS full record; WoS citing articles |
|
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Impact Factor |
3.736 |
Times cited |
43 |
Open Access |
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Notes |
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Approved |
PHYSICS, APPLIED 28/145 Q1 # |
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Call Number |
UA @ lucian @ c:irua:99708 |
Serial |
1933 |
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Permanent link to this record |