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Records |
Links |
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Author |
Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C. |
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Title |
The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals |
Type |
P1 Proceeding |
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Year |
2000 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
167-171 |
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Keywords |
P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
Multishell tabular grains have a higher speed than pure AgBr tabular grains. Usually the shells differ in size and iodide content, but also the precipitation method for the iodide containing shells has an influence on the iodide incorporation. A TEM investigation was performed to determine the defect structure of multishell AgBr (111) tabular crystals containing a shell with a low iodide concentration and one with a high iodide concentration. The twins that induce tabular growth and stacking fault contrast in the region of the iodide shells have been observed, similar to previously studied AgBr/Ag(Br,I) coreshell crystals. Moreover in some of the crystals dislocations have been observed, sometimes even an entire network. The number of dislocations formed varies for the different methods of iodide addition. Also variations in average thickness between the different iodide addition methods have been observed. A higher number of dislocations and thicker crystals point towards a higher local concentration of iodide. These observations allow deciding which iodide incorporation method is most useful for a preferred dislocation pattern. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Soc Imaging Science Technology |
Place of Publication |
Springfield |
Editor |
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Language |
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Wos |
000183315900046 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0-89208-229-1 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:95774 |
Serial |
3587 |
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Permanent link to this record |
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Author |
van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. |
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Title |
Defects and growth mechanisms of AgCl(100) tabular crystals |
Type |
A1 Journal article |
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Year |
1998 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
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Volume |
187 |
Issue |
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Pages |
410-420 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000073710800014 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-0248; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.751 |
Times cited |
8 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.751; 1998 IF: 1.307 |
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Call Number |
UA @ lucian @ c:irua:29675 |
Serial |
625 |
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Permanent link to this record |
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Author |
van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. |
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Title |
Defects in AgCl and AgBr(100) tabular crystals studied by TEM |
Type |
P3 Proceeding |
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Year |
1998 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
6-11 |
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Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Publisher |
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Place of Publication |
Antwerpen |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:29680 |
Serial |
628 |
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Permanent link to this record |
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Author |
van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Bollen, D.; de Keyzer, R.; van Roost, C. |
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Title |
Influence of twinning on the morphology of AgBr and AgCl microcrystals |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
The journal of imaging science and technology |
Abbreviated Journal |
J Imaging Sci Techn |
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Volume |
45 |
Issue |
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Pages |
349-356 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Springfield, Va |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1062-3701 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.348 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 0.348; 2001 IF: NA |
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Call Number |
UA @ lucian @ c:irua:48381 |
Serial |
1657 |
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Permanent link to this record |
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Author |
van Landuyt, J.; Vanhellemont, J. |
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Title |
High-resolution electron microscopy for semiconducting materials science |
Type |
H3 Book chapter |
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Year |
1994 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
1109-1147 |
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Keywords |
H3 Book chapter; Electron microscopy for materials research (EMAT) |
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Abstract |
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Corporate Author |
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Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:10008 |
Serial |
1449 |
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Permanent link to this record |
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Author |
van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. |
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Title |
Crystallography of fullerites and related graphene textures |
Type |
A1 Journal article |
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Year |
1994 |
Publication |
Materials science forum |
Abbreviated Journal |
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Volume |
150/151 |
Issue |
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Pages |
53-64 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
A1994BC12F00004 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0255-5476; 1662-9752 |
ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:10001 |
Serial |
590 |
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Permanent link to this record |
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Author |
van Landuyt, J.; Van Tendeloo, G. |
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Title |
Charcaterization by high-resolution transmission electron microscopy |
Type |
H3 Book chapter |
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Year |
1998 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
187-190 |
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Keywords |
H3 Book chapter; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Stt |
Place of Publication |
Den Haag |
Editor |
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Language |
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Wos |
A1990DC39700012 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:29685 |
Serial |
335 |
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Permanent link to this record |
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Author |
van Landuyt, J.; Van Tendeloo, G. |
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Title |
HREM for characterisation of nanoscale microstructures |
Type |
P3 Proceeding |
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Year |
1998 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
15-18 |
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Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Kyoto |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
|
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:25687 |
Serial |
1499 |
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Permanent link to this record |
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Author |
van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J. |
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Title |
Microscopy of gemmological materials |
Type |
H3 Book chapter |
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Year |
1997 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
293-320 |
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Keywords |
H3 Book chapter; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Vch |
Place of Publication |
Weinheim |
Editor |
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Language |
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Wos |
A1995BC72X00044 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
4 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:21419 |
Serial |
2037 |
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Permanent link to this record |
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Author |
van Landuyt, J.; Kuypers, S.; van Heurck, C.; Van Tendeloo, G.; Amelinckx, S. |
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Title |
Methods of structural analysis of modulated structures and quasicrystals |
Type |
H3 Book chapter |
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Year |
1993 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
205-224 |
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Keywords |
H3 Book chapter; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
s.l. |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
|
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:6781 |
Serial |
2018 |
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Permanent link to this record |
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Author |
van Landuyt, J. |
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Title |
High resolution electron microscopy for materials |
Type |
H3 Book chapter |
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Year |
1992 |
Publication |
|
Abbreviated Journal |
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Volume |
|
Issue |
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Pages |
23-32 |
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Keywords |
H3 Book chapter; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Eurem 92 |
Place of Publication |
Granada |
Editor |
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Language |
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Wos |
000166175900005 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
7 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:4097 |
Serial |
1448 |
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Permanent link to this record |
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Author |
van Landuyt, J. |
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Title |
Een tempel voor elektronenmicroscopie “kijken naar atomen” |
Type |
A3 Journal article |
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Year |
1998 |
Publication |
Fonds informatief |
Abbreviated Journal |
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Volume |
38 |
Issue |
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Pages |
13-17 |
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Keywords |
A3 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Antwerpen |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0776-8133 |
ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:29673 |
Serial |
3495 |
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Permanent link to this record |
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Author |
van Landuyt, J. |
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Title |
The evolution of HVEM application in antwerp |
Type |
A1 Journal article |
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Year |
1991 |
Publication |
Ultramicroscopy
T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan |
Abbreviated Journal |
Ultramicroscopy |
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Volume |
39 |
Issue |
1-4 |
Pages |
287-298 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1991GY23100034 |
Publication Date |
2002-10-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0304-3991; |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
2.436 |
Times cited |
|
Open Access |
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Notes |
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Approved |
PHYSICS, APPLIED 47/145 Q2 # |
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Call Number |
UA @ lucian @ c:irua:95973 |
Serial |
3579 |
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Permanent link to this record |
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Author |
Udoh, K.-I.; El- Araby, A.M.; Tanaka, Y.; Hisatsune, K.; Yasuda, K.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
Structural aspects of AuCu I or AuCu II and a cuboidal black configuration of f.c.c. disordered phase in AuCu-Pt and AuCu-Ag pseudobinary alloys |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Materials science and engineering: part A: structural materials: properties, microstructure and processing |
Abbreviated Journal |
Mat Sci Eng A-Struct |
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Volume |
203 |
Issue |
|
Pages |
154-164 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
A1995TM62800016 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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|
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ISSN |
0921-5093; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.567 |
Times cited |
15 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:13298 |
Serial |
3205 |
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Permanent link to this record |
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Author |
Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. |
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Title |
Reliability of copper dual damascene influenced by pre-clean |
Type |
P1 Proceeding |
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Year |
2002 |
Publication |
Analysis Of Integrated Circuits |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
118-123 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Ieee |
Place of Publication |
New york |
Editor |
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Language |
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Wos |
000177689400022 |
Publication Date |
2003-06-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
|
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
5 |
Open Access |
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|
|
Notes |
Conference name: |
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:104170 |
Serial |
2865 |
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Permanent link to this record |
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Author |
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.; Dinescu, M. |
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Title |
TEM study of laser induced phase transition in iron thin films |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
|
|
Volume |
29 |
Issue |
1 |
Pages |
63-71 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Laser induced phase transition from b.c.c.(alpha) to f.c.c.(gamma) iron thin films is studied by high resolution TEM. The iron film has been covered on both sides with carbon layers to protect it against oxidation. Single pulse, tau FWHM = 20ns KrF (lambda = 248nm) excimer laser irradiation was performed in air with the film on the substrate. The laser pulse acts like a heat pulse followed by a rapid quenching revealing sequential aspects of the phase transition process. The presence of a fine mixture of the alpha + gamma phases between the alpha and gamma regions of the film has been interpreted as an incomplet transformation. The results are explained by assuming that the transformation took place via a phonon drag mechanism. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
A1994ML03000008 |
Publication Date |
2003-06-21 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0025-5408; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.288 |
Times cited |
2 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:99945 |
Serial |
3488 |
|
Permanent link to this record |
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|
|
Author |
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. |
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|
Title |
High resolution TEM observation of in situ colloid formation in CaF2 crystals |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Materials science forum |
Abbreviated Journal |
|
|
|
Volume |
239-241 |
Issue |
|
Pages |
671-674 |
|
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
A1997BH33W00145 |
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0255-5476; 1662-9752 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
3 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:21404 |
Serial |
1460 |
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Permanent link to this record |
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Author |
Teodorescu, V.S.; Mihailescu, I.N.; Gyorgy, E.; Luches, A.; Martino, M.; Nistor, L.C.; van Landuyt, J.; Hermann, J. |
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Title |
The study of a crater forming on the surface of a Ti target submitted to multipulse excimer laser irradiation under low pressure N2 |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Journal of modern optics |
Abbreviated Journal |
J Mod Optic |
|
|
Volume |
43 |
Issue |
9 |
Pages |
1773-1784 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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|
Abstract |
A Ti target was submitted to laser ablation in low ambient pressure N-2. Electron microscopy examination of the cross-section of the crater zone forming on the Ti target, and XPS analyses, indicate that there is a small effect on the nitridation processes taking place on and in the vicinity of the target. The studies show a zone influenced by the multipulse laser treatment extending beneath the crater down to a depth of the same order of magnitude as the crater depth (i.e. similar to 10 mu m). In this zone, TiN could be identified as being present only in traces, while the whole zone exhibited a layer structure with differences in morphology and mechanical wear. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1996VF31900002 |
Publication Date |
2007-07-07 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0950-0340;1362-3044; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.008 |
Times cited |
11 |
Open Access |
|
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
|
|
Call Number |
UA @ lucian @ c:irua:95238 |
Serial |
3594 |
|
Permanent link to this record |
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|
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Author |
Teodorescu, V.S.; Mihailescu, I.N.; Dinescu, M.; Chitica, N.; Nistor, L.C.; van Landuyt, J.; Barborica, A. |
|
|
Title |
Laser induced phase transition in iron thin films |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation |
Abbreviated Journal |
|
|
|
Volume |
4 |
Issue |
|
Pages |
127-130 |
|
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
|
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Les Ulis |
Editor |
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Language |
|
Wos |
A1994NT08700028 |
Publication Date |
2007-07-16 |
|
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1155-4339; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
2 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:10003 |
Serial |
1787 |
|
Permanent link to this record |
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Author |
Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
|
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Title |
In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
|
Volume |
90 |
Issue |
1 |
Pages |
167-174 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
|
Wos |
000169361100023 |
Publication Date |
2002-07-26 |
|
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.068 |
Times cited |
97 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2001 IF: 2.128 |
|
|
Call Number |
UA @ lucian @ c:irua:102855 |
Serial |
1587 |
|
Permanent link to this record |
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Author |
Takeda, M.; Suzuki, N.; Shinohara, G.; Endo, T.; van Landuyt, J. |
|
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Title |
TEM study on precipitation behavior in Cu-Co alloys |
Type |
A1 Journal article |
|
Year |
1998 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
Phys Status Solidi A |
|
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Volume |
168 |
Issue |
|
Pages |
27-35 |
|
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Berlin |
Editor |
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Language |
|
Wos |
000075226500005 |
Publication Date |
2002-09-10 |
|
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0031-8965;1521-396X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
18 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:29677 |
Serial |
3494 |
|
Permanent link to this record |
|
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Author |
Takeda, M.; Shinohara, G.; Yamada, H.; Yoshida, S.; van Landuyt, J.; Hashimoto, H. |
|
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Title |
Precipitation behavior in Cu-Co alloy |
Type |
P3 Proceeding |
|
Year |
1998 |
Publication |
|
Abbreviated Journal |
|
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Volume |
|
Issue |
|
Pages |
205-206 |
|
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Keywords |
P3 Proceeding; Electron microscopy for materials research (EMAT) |
|
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Kyoto |
Editor |
|
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Language |
|
Wos |
|
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
|
ISBN |
|
Additional Links |
UA library record |
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|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:29682 |
Serial |
2689 |
|
Permanent link to this record |
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|
Author |
Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. |
|
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Title |
Defect characterization in high temperature implanted 6H-SiC using TEM |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Nuclear instruments and methods in physics research: B |
Abbreviated Journal |
Nucl Instrum Meth B |
|
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Volume |
127/128 |
Issue |
|
Pages |
347-349 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
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Abstract |
|
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|
Address |
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Corporate Author |
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Thesis |
|
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Publisher |
|
Place of Publication |
|
Editor |
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Language |
|
Wos |
A1997XG60500078 |
Publication Date |
2002-07-25 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.109 |
Times cited |
17 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 1.109; 1997 IF: 1.016 |
|
|
Call Number |
UA @ lucian @ c:irua:21411 |
Serial |
613 |
|
Permanent link to this record |
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Author |
Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. |
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Title |
Stress analysis with convergent beam electron diffraction around NMOS transistors |
Type |
P1 Proceeding |
|
Year |
2001 |
Publication |
|
Abbreviated Journal |
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Volume |
|
Issue |
|
Pages |
359-360 |
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Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Princeton University Press |
Place of Publication |
Princeton, N.J. |
Editor |
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Language |
|
Wos |
|
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1-58949-003-7 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:95736 |
Serial |
3176 |
|
Permanent link to this record |
|
|
|
|
Author |
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
|
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Title |
Morphology and defects in shallow trench isolation structures |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
|
|
|
Volume |
164 |
Issue |
|
Pages |
443-446 |
|
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
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Abstract |
|
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|
Address |
|
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Corporate Author |
|
Thesis |
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Publisher |
|
Place of Publication |
London |
Editor |
|
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Language |
|
Wos |
000166835300094 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0305-2346 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
1 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:29690 |
Serial |
2206 |
|
Permanent link to this record |
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|
|
Author |
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
|
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Title |
The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Materials science in semiconductor processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
|
|
Volume |
4 |
Issue |
1/3 |
Pages |
117-119 |
|
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Oxford |
Editor |
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Language |
|
Wos |
000167727200028 |
Publication Date |
2002-10-14 |
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|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1369-8001; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.359 |
Times cited |
6 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.359; 2001 IF: 0.419 |
|
|
Call Number |
UA @ lucian @ c:irua:94968 |
Serial |
3602 |
|
Permanent link to this record |
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Author |
Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. |
|
|
Title |
Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Journal of the electrochemical society |
Abbreviated Journal |
J Electrochem Soc |
|
|
Volume |
148 |
Issue |
11 |
Pages |
G597-G601 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
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|
|
Language |
|
Wos |
000171653100038 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0013-4651; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.259 |
Times cited |
13 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.259; 2001 IF: 2.033 |
|
|
Call Number |
UA @ lucian @ c:irua:103394 |
Serial |
1725 |
|
Permanent link to this record |
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|
|
|
Author |
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
|
|
Title |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
|
|
|
Volume |
|
Issue |
169 |
Pages |
481-484 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
|
Editor |
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Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0-7503-0818-4 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:95163 |
Serial |
311 |
|
Permanent link to this record |
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|
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Author |
Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. |
|
|
Title |
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon |
Type |
A1 Journal article |
|
Year |
2002 |
Publication |
Journal of physics : condensed matter
T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY |
Abbreviated Journal |
J Phys-Condens Mat |
|
|
Volume |
14 |
Issue |
48 |
Pages |
13185-13193 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
London |
Editor |
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|
Language |
|
Wos |
000180091100068 |
Publication Date |
2002-11-23 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
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Edition |
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ISSN |
0953-8984; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.649 |
Times cited |
3 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.649; 2002 IF: 1.775 |
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Call Number |
UA @ lucian @ c:irua:103326 |
Serial |
2477 |
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Permanent link to this record |
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Author |
Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. |
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Title |
Structural studies on new ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Journal of solid state chemistry |
Abbreviated Journal |
J Solid State Chem |
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Volume |
114 |
Issue |
2 |
Pages |
560-574 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 were synthesized and their crystal structures and defects were studied by means of X-ray powder diffraction, electron diffraction, and high resolution electron microscopy. The crystal structure of Ba8Ta4Ti3O24 is based on the 8H (cchc)(2) close-packed stacking (a 10.0314 Angstrom, c = 18.869 Angstrom, SG P6(3)/mcm, Z = 3) and that of Ba10Ta7.04Ti1.2O30 and on the 10H (cchcc)(2) close-packed stacking (a = 5.7981 Angstrom, c = 23.755 Angstrom, SG P6(3)/mmc, Z = 1) of BaO3 layers. The structural refinements gave the following values for the R factors for Ba8Ta4Ti3O24 (Ba10Ta7.04Ti1.2O30) R(I) = 0.041 (0.039), R(P) = 0.108 (0.118), and R(wP) = 0.094 (0.099). The main feature of both structures is the presence of two types of face-sharing octahedra (FSO) with different occupancies by Ta atoms, Ti atoms, and vacancies, which results in the formation of a superstructure. It was shown that in the Ba8Ta4Ti3O24 structure these pairs of FSO occur in an ordered fashion and in the Ba10Ta7.04Ti1.2O30 structure in a disordered fashion. The existence of the wide range of solid solutions was shown to be also a consequence of the presence of one of the two types of face-sharing octahedra. (C) 1995 Academic Press, Inc, |
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Publisher |
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Place of Publication |
London |
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Wos |
A1995QH33100040 |
Publication Date |
2002-10-07 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-4596; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.133 |
Times cited |
23 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:13289 |
Serial |
3261 |
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Permanent link to this record |