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D- centers probed by resonant tunneling spectroscopy”. Lok JGS, Geim AK, Maan JC, Marmorkos I, Peeters FM, Mori N, Eaves L, Forster TJ, Main PC, Sakai JW, Henini M, Physical review : B : condensed matter and materials physics 53, 9554 (1996)
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Resonant tunneling through D- states”. Lok JGS, Geim AK, Maan JC, Marmorkos I, Peeters FM, Mori N, Eaves L, McDonnell P, Henini M, Sakai JW, Main PC, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 247 (1996)
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Synthesis and characterization of oxygen-deficient oxides BaCo1-xYxO3-y' x = 0.15, 0.25 and 0.33, with the perovskite structure”. Lomakov MV, Istomin SY, Abakumov AM, Van Tendeloo G, Antipov EV, Solid state ionics 179, 1885 (2008). http://doi.org/10.1016/j.ssi.2008.05.004
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In situ tailoring of superconducting junctions via electro-annealing”. Lombardo J, Jelić, ŽL, Baumans XDA, Scheerder JE, Nacenta JP, Moshchalkov VV, Van de Vondel J, Kramer RBG, Milošević, MV, Silhanek AV, Nanoscale 10, 1987 (2018). http://doi.org/10.1039/C7NR08571K
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Plasma chemical looping : unlocking high-efficiency CO₂, conversion to clean CO at mild temperatures”. Long Y, Wang X, Zhang H, Wang K, Ong W-L, Bogaerts A, Li K, Lu C, Li X, Yan J, Tu X, Zhang H, JACS Au (2024). http://doi.org/10.1021/JACSAU.4C00153
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Advanced turbulence models and boundary conditions for flows around different configurations of ground-mounted buildings”. Longo R, Ferrarotti M, Garcia Sánchez C, Derudi M, Parente A, Journal of wind engineering and industrial aerodynamics 167, 160 (2017). http://doi.org/10.1016/J.JWEIA.2017.04.015
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Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures”. Loo R, Arimura H, Cott D, Witters L, Pourtois G, Schulze A, Douhard B, Vanherle W, Eneman G, Richard O, Favia P, Mitard J, Mocuta D, Langer R, Collaert N, ECS journal of solid state science and technology 7, P66 (2018). http://doi.org/10.1149/2.0191802JSS
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Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures”. Loo R, Arimura H, Cott D, Witters L, Pourtois G, Schulze A, Douhard B, Vanherle W, Eneman G, Richard O, Favia P, Mitard J, Mocuta D, Langer R, Collaert N, Semiconductor Process Integration 10 , 241 (2017). http://doi.org/10.1149/08004.0241ECST
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Lab-scale physical model experiments to understand the effect of particle bed on tapping flow rates”. Loomba V, Pourfallah H, Olsen JE, Einarsrud KE, , 159 (2022). http://doi.org/10.1007/978-3-030-92544-4_13
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Characterization of 18th century Portuguese glass from Real Fábrica de Vidros de Coina”. Lopes F, Lima A, Pires de Matos A, Custódio J, Cagno S, Schalm O, Janssens K, Journal of Archaeological Science: Reports 14, 137 (2017). http://doi.org/10.1016/J.JASREP.2017.05.020
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Heterometallic molecular complexes act as messenger building units to encode desired metal-atom combinations to multivariate metal-organic frameworks”. Lopez-Garcia C, Canossa S, Hadermann J, Gorni G, Oropeza FE, de la Pena O'Shea VA, Iglesias M, Monge MA, Gutierrez-Puebla E, Gandara F, Journal of the American Chemical Society 144, 16262 (2022). http://doi.org/10.1021/JACS.2C06142
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Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain”. Loquet J-P, Perret J, Fompeyrine J, Mächler E, Seo JW, Van Tendeloo G, Nature 394, 453 (1998). http://doi.org/10.1038/28810
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Pd-In2O3 interaction due to reduction in hydrogen: consequences for methanol steam reforming”. Lorenz H, Turner S, Lebedev OI, Van Tendeloo G, Klötzer B, Rameshan C, Pfaller K, Penner S, Applied catalysis : A : general 374, 180 (2010). http://doi.org/10.1016/j.apcata.2009.12.007
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Origin of different deactivation of Pd/SnO2 and Pd/GeO2 catalysts in methanol dehydrogenation and reforming: a comparative study”. Lorenz H, Zhao Q, Turner S, Lebedev OI, Van Tendeloo G, Kloetzer B, Rameshan C, Pfaller K, Applied catalysis : A : general 381, 242 (2010). http://doi.org/10.1016/j.apcata.2010.04.015
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Preparation and structural characterization of SnO2 and GeO2 methanol steam reforming thin film model catalysts by (HR)TEM”. Lorenz H, Zhao Q, Turner S, Lebedev OI, Van Tendeloo G, Klötzer B, Rameshan C, Penner S, Materials chemistry and physics 122, 623 (2010). http://doi.org/10.1016/j.matchemphys.2010.03.057
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The effect of the buffer solution on the adsorption and stability of horse heart myoglobin on commercial mesoporous titanium dioxide : a matter of the right choice”. Loreto S, Cuypers B, Brokken J, Van Doorslaer S, De Wael K, Meynen V, Physical chemistry, chemical physics 19, 13503 (2017). http://doi.org/10.1039/C6CP08585G
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The influence of acids on tuning the pore size of mesoporous TiO2 templated by non-ionic block copolymers”. Loreto S, Vanrompay H, Mertens M, Bals S, Meynen V, European journal of inorganic chemistry 2018, 62 (2018). http://doi.org/10.1002/EJIC.201701266
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Strongly Exchange Coupled Core|Shell Nanoparticles with High Magnetic Anisotropy: A Strategy toward Rare-Earth-Free Permanent Magnets”. Lottini E, López-Ortega A, Bertoni G, Turner S, Meledina M, Van Tendeloo G, de Julián Fernández C, Sangregorio C, Chemistry of materials 28, 4214 (2016). http://doi.org/10.1021/acs.chemmater.6b00623
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Lou W-K (2012) The electrical properties of low low dimensional topological insulators. 186 p
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Experimental observation of electron-phonon coupling enhancement in Sn nanowires caused by phonon confinement effects”. Lozano DP, Couet S, Petermann C, Hamoir G, Jochum JK, Picot T, Menendez E, Houben K, Joly V, Antohe VA, Hu MY, Leu BM, Alatas A, Said AH, Roelants S, Partoens B, Milošević, MV, Peeters FM, Piraux L, Van de Vondel J, Vantomme A, Temst K, Van Bael MJ, Physical review B 99, 064512 (2019). http://doi.org/10.1103/PHYSREVB.99.064512
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Impact of layer alignment on the behavior of MoS2-ZrS2 tunnel field-effect transistors : an ab initio study”. Lu AKA, Houssa M, Luisier M, Pourtois G, Physical review applied 8, 034017 (2017). http://doi.org/10.1103/PHYSREVAPPLIED.8.034017
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Toward an understanding of the electric field-induced electrostatic doping in van der Waals heterostructures : a first-principles study”. Lu AKA, Houssa M, Radu IP, Pourtois G, ACS applied materials and interfaces 9, 7725 (2017). http://doi.org/10.1021/ACSAMI.6B14722
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Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study”. Lu AKA, Pourtois G, Agarwal T, Afzalian A, Radu IP, Houssa M, Applied physics letters 108, 043504 (2016). http://doi.org/10.1063/1.4940685
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On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study”. Lu AKA, Pourtois G, Luisier M, Radu IP, Houssa M, Journal of applied physics 121, 044505 (2017). http://doi.org/10.1063/1.4974960
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Internal architecture of coffin-shaped ZSM-5 zeolite crystals with hourglass contrast unravelled by focused ion beam-assisted transmission electron microscopy: INTERNAL ARCHITECTURE OF COFFIN-SHAPED”. Lu J, Bartholomeeusen E, Sels BF, Schryvers D, Journal of microscopy 265, 27 (2017). http://doi.org/10.1111/jmi.12459
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Lattice deformations in quasi-dynamic strain glass visualised and quantified by aberration corrected electron microscopy”. Lu J, Martinez GT, Van Aert S, Schryvers D, Physica status solidi: B: basic research 251, 2034 (2014). http://doi.org/10.1002/pssb.201350351
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Intergrowth of components and ramps in coffin-shaped ZSM-5 zeolite crystals unraveled by focused ion beam-assisted transmission electron microscopy”. Lu J, Roeffaers MBJ, Bartholomeeusen E, Sels BF, Schryvers D, Microscopy and microanalysis 20, 42 (2014). http://doi.org/10.1017/S1431927613013731
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Microstructure and phase composition characterization in a Co38Ni33Al29 ferromagnetic shape memory alloy”. Lu JB, Schryvers D, Materials characterization 118, 9 (2016). http://doi.org/10.1016/j.matchar.2016.04.028
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Microstructure and precipitates in annealed Co38Ni33Al29 ferromagnetic shape memory alloy”. Lu JB, Shi H, Sedlakova-Ignacova S, Espinoza R, Kopeček J, Sittner P, Bártová, B, Schryvers D, Journal of alloys and compounds 572, 5 (2013). http://doi.org/10.1016/j.jallcom.2013.03.228
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Lu Q (2024) Precipitation behavior and heat resistance properties of Al-Cu-Mg-Ag-(Si) alloy. VIII, 212 p
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