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Author (up) Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.
Title Structural studies on new ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 Type A1 Journal article
Year 1995 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem
Volume 114 Issue 2 Pages 560-574
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 were synthesized and their crystal structures and defects were studied by means of X-ray powder diffraction, electron diffraction, and high resolution electron microscopy. The crystal structure of Ba8Ta4Ti3O24 is based on the 8H (cchc)(2) close-packed stacking (a 10.0314 Angstrom, c = 18.869 Angstrom, SG P6(3)/mcm, Z = 3) and that of Ba10Ta7.04Ti1.2O30 and on the 10H (cchcc)(2) close-packed stacking (a = 5.7981 Angstrom, c = 23.755 Angstrom, SG P6(3)/mmc, Z = 1) of BaO3 layers. The structural refinements gave the following values for the R factors for Ba8Ta4Ti3O24 (Ba10Ta7.04Ti1.2O30) R(I) = 0.041 (0.039), R(P) = 0.108 (0.118), and R(wP) = 0.094 (0.099). The main feature of both structures is the presence of two types of face-sharing octahedra (FSO) with different occupancies by Ta atoms, Ti atoms, and vacancies, which results in the formation of a superstructure. It was shown that in the Ba8Ta4Ti3O24 structure these pairs of FSO occur in an ordered fashion and in the Ba10Ta7.04Ti1.2O30 structure in a disordered fashion. The existence of the wide range of solid solutions was shown to be also a consequence of the presence of one of the two types of face-sharing octahedra. (C) 1995 Academic Press, Inc,
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1995QH33100040 Publication Date 2002-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.133 Times cited 23 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:13289 Serial 3261
Permanent link to this record
 
 
Author (up) Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O.
Title Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon Type A1 Journal article
Year 2002 Publication Journal of physics : condensed matter T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY Abbreviated Journal J Phys-Condens Mat
Volume 14 Issue 48 Pages 13185-13193
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000180091100068 Publication Date 2002-11-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-8984; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.649 Times cited 3 Open Access
Notes Approved Most recent IF: 2.649; 2002 IF: 1.775
Call Number UA @ lucian @ c:irua:103326 Serial 2477
Permanent link to this record
 
 
Author (up) Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K.
Title Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation Type A1 Journal article
Year 2001 Publication Institute of physics conference series Abbreviated Journal
Volume Issue 169 Pages 481-484
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0818-4 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95163 Serial 311
Permanent link to this record
 
 
Author (up) Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G.
Title Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures Type A1 Journal article
Year 2001 Publication Journal of the electrochemical society Abbreviated Journal J Electrochem Soc
Volume 148 Issue 11 Pages G597-G601
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000171653100038 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0013-4651; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.259 Times cited 13 Open Access
Notes Approved Most recent IF: 3.259; 2001 IF: 2.033
Call Number UA @ lucian @ c:irua:103394 Serial 1725
Permanent link to this record
 
 
Author (up) Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G.
Title Morphology and defects in shallow trench isolation structures Type A1 Journal article
Year 1999 Publication Conference series of the Institute of Physics Abbreviated Journal
Volume 164 Issue Pages 443-446
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000166835300094 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29690 Serial 2206
Permanent link to this record
 
 
Author (up) Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G.
Title The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures Type A1 Journal article
Year 2001 Publication Materials science in semiconductor processing Abbreviated Journal Mat Sci Semicon Proc
Volume 4 Issue 1/3 Pages 117-119
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000167727200028 Publication Date 2002-10-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1369-8001; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.359 Times cited 6 Open Access
Notes Approved Most recent IF: 2.359; 2001 IF: 0.419
Call Number UA @ lucian @ c:irua:94968 Serial 3602
Permanent link to this record
 
 
Author (up) Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P.
Title Stress analysis with convergent beam electron diffraction around NMOS transistors Type P1 Proceeding
Year 2001 Publication Abbreviated Journal
Volume Issue Pages 359-360
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
Abstract
Address
Corporate Author Thesis
Publisher Princeton University Press Place of Publication Princeton, N.J. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1-58949-003-7 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95736 Serial 3176
Permanent link to this record
 
 
Author (up) Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O.
Title Defect characterization in high temperature implanted 6H-SiC using TEM Type A1 Journal article
Year 1997 Publication Nuclear instruments and methods in physics research: B Abbreviated Journal Nucl Instrum Meth B
Volume 127/128 Issue Pages 347-349
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1997XG60500078 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.109 Times cited 17 Open Access
Notes Approved Most recent IF: 1.109; 1997 IF: 1.016
Call Number UA @ lucian @ c:irua:21411 Serial 613
Permanent link to this record
 
 
Author (up) Takeda, M.; Shinohara, G.; Yamada, H.; Yoshida, S.; van Landuyt, J.; Hashimoto, H.
Title Precipitation behavior in Cu-Co alloy Type P3 Proceeding
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 205-206
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Kyoto Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29682 Serial 2689
Permanent link to this record
 
 
Author (up) Takeda, M.; Suzuki, N.; Shinohara, G.; Endo, T.; van Landuyt, J.
Title TEM study on precipitation behavior in Cu-Co alloys Type A1 Journal article
Year 1998 Publication Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A
Volume 168 Issue Pages 27-35
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Berlin Editor
Language Wos 000075226500005 Publication Date 2002-09-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 18 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29677 Serial 3494
Permanent link to this record
 
 
Author (up) Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.
Title In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines Type A1 Journal article
Year 2001 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 90 Issue 1 Pages 167-174
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.
Address
Corporate Author Thesis
Publisher American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000169361100023 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 97 Open Access
Notes Approved Most recent IF: 2.068; 2001 IF: 2.128
Call Number UA @ lucian @ c:irua:102855 Serial 1587
Permanent link to this record
 
 
Author (up) Teodorescu, V.S.; Mihailescu, I.N.; Dinescu, M.; Chitica, N.; Nistor, L.C.; van Landuyt, J.; Barborica, A.
Title Laser induced phase transition in iron thin films Type A1 Journal article
Year 1994 Publication Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation Abbreviated Journal
Volume 4 Issue Pages 127-130
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Les Ulis Editor
Language Wos A1994NT08700028 Publication Date 2007-07-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10003 Serial 1787
Permanent link to this record
 
 
Author (up) Teodorescu, V.S.; Mihailescu, I.N.; Gyorgy, E.; Luches, A.; Martino, M.; Nistor, L.C.; van Landuyt, J.; Hermann, J.
Title The study of a crater forming on the surface of a Ti target submitted to multipulse excimer laser irradiation under low pressure N2 Type A1 Journal article
Year 1996 Publication Journal of modern optics Abbreviated Journal J Mod Optic
Volume 43 Issue 9 Pages 1773-1784
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A Ti target was submitted to laser ablation in low ambient pressure N-2. Electron microscopy examination of the cross-section of the crater zone forming on the Ti target, and XPS analyses, indicate that there is a small effect on the nitridation processes taking place on and in the vicinity of the target. The studies show a zone influenced by the multipulse laser treatment extending beneath the crater down to a depth of the same order of magnitude as the crater depth (i.e. similar to 10 mu m). In this zone, TiN could be identified as being present only in traces, while the whole zone exhibited a layer structure with differences in morphology and mechanical wear.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos A1996VF31900002 Publication Date 2007-07-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0950-0340;1362-3044; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.008 Times cited 11 Open Access
Notes Approved PHYSICS, APPLIED 47/145 Q2 #
Call Number UA @ lucian @ c:irua:95238 Serial 3594
Permanent link to this record
 
 
Author (up) Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.
Title High resolution TEM observation of in situ colloid formation in CaF2 crystals Type A1 Journal article
Year 1997 Publication Materials science forum Abbreviated Journal
Volume 239-241 Issue Pages 671-674
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos A1997BH33W00145 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 3 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21404 Serial 1460
Permanent link to this record
 
 
Author (up) Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.; Dinescu, M.
Title TEM study of laser induced phase transition in iron thin films Type A1 Journal article
Year 1994 Publication Materials research bulletin Abbreviated Journal Mater Res Bull
Volume 29 Issue 1 Pages 63-71
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Laser induced phase transition from b.c.c.(alpha) to f.c.c.(gamma) iron thin films is studied by high resolution TEM. The iron film has been covered on both sides with carbon layers to protect it against oxidation. Single pulse, tau FWHM = 20ns KrF (lambda = 248nm) excimer laser irradiation was performed in air with the film on the substrate. The laser pulse acts like a heat pulse followed by a rapid quenching revealing sequential aspects of the phase transition process. The presence of a fine mixture of the alpha + gamma phases between the alpha and gamma regions of the film has been interpreted as an incomplet transformation. The results are explained by assuming that the transformation took place via a phonon drag mechanism.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1994ML03000008 Publication Date 2003-06-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0025-5408; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.288 Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:99945 Serial 3488
Permanent link to this record
 
 
Author (up) Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J.
Title Reliability of copper dual damascene influenced by pre-clean Type P1 Proceeding
Year 2002 Publication Analysis Of Integrated Circuits Abbreviated Journal
Volume Issue Pages 118-123
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos 000177689400022 Publication Date 2003-06-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 5 Open Access
Notes Conference name: Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104170 Serial 2865
Permanent link to this record
 
 
Author (up) Udoh, K.-I.; El- Araby, A.M.; Tanaka, Y.; Hisatsune, K.; Yasuda, K.; Van Tendeloo, G.; van Landuyt, J.
Title Structural aspects of AuCu I or AuCu II and a cuboidal black configuration of f.c.c. disordered phase in AuCu-Pt and AuCu-Ag pseudobinary alloys Type A1 Journal article
Year 1995 Publication Materials science and engineering: part A: structural materials: properties, microstructure and processing Abbreviated Journal Mat Sci Eng A-Struct
Volume 203 Issue Pages 154-164
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos A1995TM62800016 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-5093; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.567 Times cited 15 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:13298 Serial 3205
Permanent link to this record
 
 
Author (up) van Landuyt, J.
Title High resolution electron microscopy for materials Type H3 Book chapter
Year 1992 Publication Abbreviated Journal
Volume Issue Pages 23-32
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Eurem 92 Place of Publication Granada Editor
Language Wos 000166175900005 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:4097 Serial 1448
Permanent link to this record
 
 
Author (up) van Landuyt, J.
Title Een tempel voor elektronenmicroscopie “kijken naar atomen” Type A3 Journal article
Year 1998 Publication Fonds informatief Abbreviated Journal
Volume 38 Issue Pages 13-17
Keywords A3 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Antwerpen Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0776-8133 ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29673 Serial 3495
Permanent link to this record
 
 
Author (up) van Landuyt, J.
Title The evolution of HVEM application in antwerp Type A1 Journal article
Year 1991 Publication Ultramicroscopy T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan Abbreviated Journal Ultramicroscopy
Volume 39 Issue 1-4 Pages 287-298
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies.
Address
Corporate Author Thesis
Publisher Elsevier Place of Publication Amsterdam Editor
Language Wos A1991GY23100034 Publication Date 2002-10-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record
Impact Factor 2.436 Times cited Open Access
Notes Approved PHYSICS, APPLIED 47/145 Q2 #
Call Number UA @ lucian @ c:irua:95973 Serial 3579
Permanent link to this record
 
 
Author (up) van Landuyt, J.; Kuypers, S.; van Heurck, C.; Van Tendeloo, G.; Amelinckx, S.
Title Methods of structural analysis of modulated structures and quasicrystals Type H3 Book chapter
Year 1993 Publication Abbreviated Journal
Volume Issue Pages 205-224
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication s.l. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:6781 Serial 2018
Permanent link to this record
 
 
Author (up) van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J.
Title Microscopy of gemmological materials Type H3 Book chapter
Year 1997 Publication Abbreviated Journal
Volume Issue Pages 293-320
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Vch Place of Publication Weinheim Editor
Language Wos A1995BC72X00044 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 4 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21419 Serial 2037
Permanent link to this record
 
 
Author (up) van Landuyt, J.; Van Tendeloo, G.
Title Charcaterization by high-resolution transmission electron microscopy Type H3 Book chapter
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 187-190
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Stt Place of Publication Den Haag Editor
Language Wos A1990DC39700012 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29685 Serial 335
Permanent link to this record
 
 
Author (up) van Landuyt, J.; Van Tendeloo, G.
Title HREM for characterisation of nanoscale microstructures Type P3 Proceeding
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 15-18
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Kyoto Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:25687 Serial 1499
Permanent link to this record
 
 
Author (up) van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W.
Title Crystallography of fullerites and related graphene textures Type A1 Journal article
Year 1994 Publication Materials science forum Abbreviated Journal
Volume 150/151 Issue Pages 53-64
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Lausanne Editor
Language Wos A1994BC12F00004 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10001 Serial 590
Permanent link to this record
 
 
Author (up) van Landuyt, J.; Vanhellemont, J.
Title High-resolution electron microscopy for semiconducting materials science Type H3 Book chapter
Year 1994 Publication Abbreviated Journal
Volume Issue Pages 1109-1147
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Elsevier Place of Publication Amsterdam Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10008 Serial 1449
Permanent link to this record
 
 
Author (up) van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Bollen, D.; de Keyzer, R.; van Roost, C.
Title Influence of twinning on the morphology of AgBr and AgCl microcrystals Type A1 Journal article
Year 2001 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn
Volume 45 Issue Pages 349-356
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Springfield, Va Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.348 Times cited Open Access
Notes Approved Most recent IF: 0.348; 2001 IF: NA
Call Number UA @ lucian @ c:irua:48381 Serial 1657
Permanent link to this record
 
 
Author (up) van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R.
Title Defects and growth mechanisms of AgCl(100) tabular crystals Type A1 Journal article
Year 1998 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth
Volume 187 Issue Pages 410-420
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000073710800014 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.751 Times cited 8 Open Access
Notes Approved Most recent IF: 1.751; 1998 IF: 1.307
Call Number UA @ lucian @ c:irua:29675 Serial 625
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Author (up) van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R.
Title Defects in AgCl and AgBr(100) tabular crystals studied by TEM Type P3 Proceeding
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 6-11
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Antwerpen Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29680 Serial 628
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Author (up) Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C.
Title The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals Type P1 Proceeding
Year 2000 Publication Abbreviated Journal
Volume Issue Pages 167-171
Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Multishell tabular grains have a higher speed than pure AgBr tabular grains. Usually the shells differ in size and iodide content, but also the precipitation method for the iodide containing shells has an influence on the iodide incorporation. A TEM investigation was performed to determine the defect structure of multishell AgBr (111) tabular crystals containing a shell with a low iodide concentration and one with a high iodide concentration. The twins that induce tabular growth and stacking fault contrast in the region of the iodide shells have been observed, similar to previously studied AgBr/Ag(Br,I) coreshell crystals. Moreover in some of the crystals dislocations have been observed, sometimes even an entire network. The number of dislocations formed varies for the different methods of iodide addition. Also variations in average thickness between the different iodide addition methods have been observed. A higher number of dislocations and thicker crystals point towards a higher local concentration of iodide. These observations allow deciding which iodide incorporation method is most useful for a preferred dislocation pattern.
Address
Corporate Author Thesis
Publisher Soc Imaging Science Technology Place of Publication Springfield Editor
Language Wos 000183315900046 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-89208-229-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95774 Serial 3587
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