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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers |
2021 |
npj 2D Materials and Applications |
5 |
|
UA library record; WoS full record; WoS citing articles |
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Tiwari, S.; Van de Put, M.; Sorée, B.; Hinkle, C.; Vandenberghe, W.G. |
Reduction of magnetic interaction due to clustering in doped transition-metal dichalcogenides : a case study of Mn-, V-, and Fe-doped WSe₂ |
2024 |
ACS applied materials and interfaces |
16 |
|
UA library record; WoS full record |
|
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects |
2019 |
2D materials |
6 |
3 |
UA library record; WoS full record; WoS citing articles |
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Vermeulen, B.B.; Raymenants, E.; Pham, V.T.; Pizzini, S.; Sorée, B.; Wostyn, K.; Couet, S.; Nguyen, V.D.; Temst, K. |
Towards fully electrically controlled domain-wall logic |
2024 |
AIP advances |
14 |
|
UA library record; WoS full record |
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Devolder, T.; Bultynck, O.; Bouquin, P.; Nguyen, V.D.; Rao, S.; Wan, D.; Sorée, B.; Radu, I.P.; Kar, G.S.; Couet, S. |
Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions |
2020 |
Physical Review B |
102 |
|
UA library record; WoS full record; WoS citing articles |
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Deylgat, E.; Chen, E.; Sorée, B.; Vandenberghe, W.G. |
Quantum transport study of contact resistance of edge- and top-contacted two-dimensional materials |
2023 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2023, Kobe, Japan |
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UA library record; WoS full record |
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Critical behavior of the ferromagnets CrI₃, CrBr₃, and CrGeTe₃ and the antiferromagnet FeCl₂ : a detailed first-principles study |
2021 |
Physical Review B |
103 |
|
UA library record; WoS full record; WoS citing articles |
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Deylgat, E.; Chen, E.; Fischetti, M.V.; Sorée, B.; Vandenberghe, W.G. |
Image-force barrier lowering in top- and side-contacted two-dimensional materials |
2022 |
Solid state electronics |
198 |
|
UA library record; WoS full record |
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Tiwari, S.; Vanherck, J.; Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B. |
Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy |
2021 |
Physical review research |
3 |
|
UA library record; WoS full record; WoS citing articles |
|
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Vanderveken, F.; Tyberkevych, V.; Talmelli, G.; Sorée, B.; Ciubotaru, F.; Adelmann, C. |
Lumped circuit model for inductive antenna spin-wave transducers |
2022 |
Scientific reports |
12 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Sorée, B.; Magnus, W.; Pourtois, G. |
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode |
2008 |
Journal of computational electronics |
7 |
70 |
UA library record; WoS full record; WoS citing articles |
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Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. |
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors |
2012 |
Applied physics letters |
100 |
25 |
UA library record; WoS full record; WoS citing articles |
|
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Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Modeling the impact of junction angles in tunnel field-effect transistors |
2012 |
Solid state electronics |
69 |
9 |
UA library record; WoS full record; WoS citing articles |
|
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Sorée, B.; Magnus, W.; Szepieniec, M.; Vandenbreghe, W.; Verhulst, A.; Pourtois, G.; Groeseneken, G.; de Gendt, S.; Heyns, M. |
Novel device concepts for nanotechnology : the nanowire pinch-off FET and graphene tunnelFET |
2010 |
ECS transactions |
28 |
|
UA library record; WoS full record; WoS citing articles |
|
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Sorée, B.; Magnus, W. |
Quantized conductance without reservoirs : method of the nonequilibrium statistical operator |
2007 |
Journal of computational electronics |
6 |
|
UA library record; WoS full record |
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Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. |
Optimization of gate-on-source-only tunnel FETs with counter-doped pockets |
2012 |
IEEE transactions on electron devices |
59 |
72 |
UA library record; WoS full record; WoS citing articles |
|
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Moors, K.; Contino, A.; Van de Put, M.L.; Vandenberghe, W.G.; Fischetti, M., V; Magnus, W.; Sorée, B. |
Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness |
2019 |
Physical review materials |
3 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
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Osca, J.; Sorée, B. |
Torque field and skyrmion motion by spin transfer torque in a quasi-2D interface in presence of strong spin-orbit interaction |
2021 |
Journal Of Applied Physics |
130 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects |
2018 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX |
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|
UA library record; WoS full record; WoS citing articles |
|
|
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab initio modeling of few-layer dilute magnetic semiconductors |
2021 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX |
|
|
UA library record; WoS full record |
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|
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. |
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers |
2009 |
Journal of applied physics |
106 |
29 |
UA library record; WoS full record; WoS citing articles |
|
|
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Pathangi, H.; Cherman, V.; Khaled, A.; Sorée, B.; Groeseneken, G.; Witvrouw, A. |
Towards CMOS-compatible single-walled carbon nanotube resonators |
2013 |
Microelectronic engineering |
107 |
6 |
UA library record; WoS full record; WoS citing articles |
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Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. |
Can p-channel tunnel field-effect transistors perform as good as n-channel? |
2014 |
Applied physics letters |
105 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
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Duflou, R.; Ciubotaru, F.; Vaysset, A.; Heyns, M.; Sorée, B.; Radu, I.P.; Adelmann, C. |
Micromagnetic simulations of magnetoelastic spin wave excitation in scaled magnetic waveguides |
2017 |
Applied physics letters |
111 |
|
UA library record; WoS full record; WoS citing articles |
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Reyntjens, P.D.; Tiwari, S.; van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab-initio study of magnetically intercalated platinum diselenide : the impact of platinum vacancies |
2021 |
Materials |
14 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Moors, K.; Sorée, B.; Tokei, Z.; Magnus, W. |
Resistivity scaling and electron relaxation times in metallic nanowires |
2014 |
Journal of applied physics |
116 |
17 |
UA library record; WoS full record; WoS citing articles |
|
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Reyntjens, P.D.; Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab-initio study of magnetically intercalated Tungsten diselenide |
2020 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 23-OCT 06, 2020 |
|
|
UA library record; WoS full record |
|
|
|
Sorée, B.; Magnus, W.; Vandenberghe, W. |
Low-field mobility in ultrathin silicon nanowire junctionless transistors |
2011 |
Applied physics letters |
99 |
20 |
UA library record; WoS full record; WoS citing articles |
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