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Author	Title	Year	Publication	Volume	Times cited	Additional Links
Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J.	Structural characterization of Nb-TiO₂ nanosized thick-films for gas sensing application	2000	Sensors and actuators : B : chemical	68	51	UA library record; WoS full record; WoS citing articles
Vanhellemont, J.; Bender, H.; van Landuyt, J.	TEM studies of processed Si device materials	1997	Conference series of the Institute of Physics	157		UA library record; WoS full record;
Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K.	Defects in high-dose oxygen implanted silicon : a TEM study	1991	Vacuum: the international journal and abstracting service for vacuum science and technology T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND	42	4	UA library record; WoS full record; WoS citing articles
Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.	Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope	1995	Materials science and technology	11	7	UA library record; WoS full record; WoS citing articles
Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O.	Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon	2002	Journal of physics : condensed matter T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY	14	3	UA library record; WoS full record; WoS citing articles
Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al.	Comparative study of structural properties and photoluminescence in InGaN layers with a high In content	2000	Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS	5		UA library record; WoS full record;
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G.	The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures	2001	Materials science in semiconductor processing	4	6	UA library record; WoS full record; WoS citing articles
van Landuyt, J.	The evolution of HVEM application in antwerp	1991	Ultramicroscopy T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan	39		UA library record; WoS full record
Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.	In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines	2001	Journal of applied physics	90	97	UA library record; WoS full record; WoS citing articles
Volkov, V.V.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Zhukov, E.G.; Polulyak, E.S.; Novotortsev, V.M.	Electron microscopy and X-ray study of the growth of FeCr₂S₄ spinel single crystals by chemical vapour transport	1993	Crystal research and technology	28	1	UA library record; WoS full record; WoS citing articles
Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J.	A 2a2a3c superstructure in hexagonal Ni_1-xS : a study by means of electron-diffraction and HRTEM	1993	Journal of crystal growth	126	4	UA library record; WoS full record; WoS citing articles
Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.;	Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry	1993	Applied surface science T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE	63	13	UA library record; WoS full record; WoS citing articles
Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H.	Microstructural characterization of diamond films deposited on c-BN crystals	2000	Diamond and related materials T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC	9	9	UA library record; WoS full record; WoS citing articles
Nistor, L.; Teodorescu, V.; Ghica, C.; van Landuyt, J.; Dinca, G.; Georgeoni, P.	The influence of the h-BN morphology and structure on the c-BN growth	2001	Diamond and related materials T2 – 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL	10	17	UA library record; WoS full record; WoS citing articles
Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R.	Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals	1994	Physica status solidi: A	143	7	UA library record; WoS full record; WoS citing articles
Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J.	Laser thermotreatment of the SnO₂layers	1998	Eurosensors XII, vols 1 and 2			UA library record; WoS full record;
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.	On the interpretation of HREM images of partially ordered alloys	1995	Ultramicroscopy	60	20	UA library record; WoS full record; WoS citing articles
Fang, P.a.; Gu, H.; Wang, P.l.; Van Landuyt, J.; Vleugels, J.; Van der Biest, O.;	Effect of powder coating on stabilizer distribution in CeO₂-stabilized ZrO₂ ceramics	2005	Journal of the American Ceramic Society	88	11	UA library record; WoS full record; WoS citing articles
Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Kononenko, T.V.; Obraztsova, E.D.; Strelnitsky, V.E.	Direct observation of laser-induced crystallization of a-C : H films	1994	Applied physics A : materials science & processing	58	73	UA library record; WoS full record; WoS citing articles
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L.	Interaction of a Ti-capped Co thin film with Si₃N₄	2000	Applied physics letters	77	3	UA library record; WoS full record; WoS citing articles
Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J.	In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates	2001	Journal of materials research	16	4	UA library record; WoS full record; WoS citing articles
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J.	Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization	1996	Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr	112	9	UA library record; WoS full record; WoS citing articles
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G.	HREM investigation of a Fe/GaN/Fe tunnel junction	2001	Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England			UA library record; WoS full record;
Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.	Structural studies on new ternary oxides Ba₈Ta₄Ti₃O₂₄ and Ba₁₀Ta_7.04Ti_1.2O₃₀	1995	Journal of solid state chemistry	114	23	UA library record; WoS full record; WoS citing articles
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S.	Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy	2001	Materials science in semiconductor processing	4		UA library record; WoS full record
Zhang, Z.; Ma, L.N.; Liao, X.Z.; van Landuyt, J.	A transmission electron-microscopy study of crystalline surface domains on al-co decagonal quasi-crystals and the \tau²-Al₁₃CO₄ approximant	1994	Philosophical magazine letters	70	4	UA library record; WoS full record; WoS citing articles
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C.	In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si_1-xGe_x/(001)Si structures	2000	Physical review : B : condensed matter and materials physics	61	27	UA library record; WoS full record; WoS citing articles
Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I.	Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer	2000	Applied physics letters	77	44	UA library record; WoS full record; WoS citing articles
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K.	Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation	2001	Institute of physics conference series			UA library record; WoS full record;
Krekels, T.; Milat, O.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Slater, P.R.; Greaves, C.	SO₄-chain formation and ordering in [YSrCa]Sr₂Cu_2.78(SO₄)_0.22O_7-\delta	1993	Physica: C : superconductivity	210	18	UA library record; WoS full record; WoS citing articles