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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Krekels, T.; Milat, O.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Slater, P.R.; Greaves, C. |
SO4-chain formation and ordering in [YSrCa]Sr2Cu2.78(SO4)0.22O7-\delta |
1993 |
Physica: C : superconductivity |
210 |
18 |
UA library record; WoS full record; WoS citing articles |
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Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
2001 |
Institute of physics conference series |
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UA library record; WoS full record; |
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Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
2000 |
Applied physics letters |
77 |
44 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J.; Mironov, O.A.; Parker, E.H.C. |
In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures |
2000 |
Physical review : B : condensed matter and materials physics |
61 |
27 |
UA library record; WoS full record; WoS citing articles |
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Zhang, Z.; Ma, L.N.; Liao, X.Z.; van Landuyt, J. |
A transmission electron-microscopy study of crystalline surface domains on al-co decagonal quasi-crystals and the \tau2-Al13CO4 approximant |
1994 |
Philosophical magazine letters |
70 |
4 |
UA library record; WoS full record; WoS citing articles |
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Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
2001 |
Materials science in semiconductor processing |
4 |
|
UA library record; WoS full record |
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Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. |
Structural studies on new ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 |
1995 |
Journal of solid state chemistry |
114 |
23 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
HREM investigation of a Fe/GaN/Fe tunnel junction |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
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UA library record; WoS full record; |
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Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr |
112 |
9 |
UA library record; WoS full record; WoS citing articles |
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Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates |
2001 |
Journal of materials research |
16 |
4 |
UA library record; WoS full record; WoS citing articles |
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Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
Interaction of a Ti-capped Co thin film with Si3N4 |
2000 |
Applied physics letters |
77 |
3 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Kononenko, T.V.; Obraztsova, E.D.; Strelnitsky, V.E. |
Direct observation of laser-induced crystallization of a-C : H films |
1994 |
Applied physics A : materials science & processing |
58 |
73 |
UA library record; WoS full record; WoS citing articles |
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Fang, P.a.; Gu, H.; Wang, P.l.; Van Landuyt, J.; Vleugels, J.; Van der Biest, O.; |
Effect of powder coating on stabilizer distribution in CeO2-stabilized ZrO2 ceramics |
2005 |
Journal of the American Ceramic Society |
88 |
11 |
UA library record; WoS full record; WoS citing articles |
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De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. |
On the interpretation of HREM images of partially ordered alloys |
1995 |
Ultramicroscopy |
60 |
20 |
UA library record; WoS full record; WoS citing articles |
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Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. |
Laser thermotreatment of the SnO2layers |
1998 |
Eurosensors XII, vols 1 and 2 |
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UA library record; WoS full record; |
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Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R. |
Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals |
1994 |
Physica status solidi: A |
143 |
7 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.; Teodorescu, V.; Ghica, C.; van Landuyt, J.; Dinca, G.; Georgeoni, P. |
The influence of the h-BN morphology and structure on the c-BN growth |
2001 |
Diamond and related materials
T2 – 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL |
10 |
17 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H. |
Microstructural characterization of diamond films deposited on c-BN crystals |
2000 |
Diamond and related materials
T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC |
9 |
9 |
UA library record; WoS full record; WoS citing articles |
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Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; |
Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry |
1993 |
Applied surface science
T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE |
63 |
13 |
UA library record; WoS full record; WoS citing articles |
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Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. |
A 2a2a3c superstructure in hexagonal Ni1-xS : a study by means of electron-diffraction and HRTEM |
1993 |
Journal of crystal growth |
126 |
4 |
UA library record; WoS full record; WoS citing articles |
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Volkov, V.V.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Zhukov, E.G.; Polulyak, E.S.; Novotortsev, V.M. |
Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport |
1993 |
Crystal research and technology |
28 |
1 |
UA library record; WoS full record; WoS citing articles |
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Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines |
2001 |
Journal of applied physics |
90 |
97 |
UA library record; WoS full record; WoS citing articles |
|
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van Landuyt, J. |
The evolution of HVEM application in antwerp |
1991 |
Ultramicroscopy
T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan |
39 |
|
UA library record; WoS full record |
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Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures |
2001 |
Materials science in semiconductor processing |
4 |
6 |
UA library record; WoS full record; WoS citing articles |
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Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
2000 |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
5 |
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UA library record; WoS full record; |
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Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. |
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon |
2002 |
Journal of physics : condensed matter
T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY |
14 |
3 |
UA library record; WoS full record; WoS citing articles |
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Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope |
1995 |
Materials science and technology |
11 |
7 |
UA library record; WoS full record; WoS citing articles |
|
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Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. |
Defects in high-dose oxygen implanted silicon : a TEM study |
1991 |
Vacuum: the international journal and abstracting service for vacuum science and technology
T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND |
42 |
4 |
UA library record; WoS full record; WoS citing articles |
|
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Vanhellemont, J.; Bender, H.; van Landuyt, J. |
TEM studies of processed Si device materials |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
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Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J. |
Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application |
2000 |
Sensors and actuators : B : chemical |
68 |
51 |
UA library record; WoS full record; WoS citing articles |
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