Abstract: Dirac plasmons in graphene are very sensitive to the dielectric properties of the environment. We show that this can be used to probe the structure and composition of van der Waals heterostructures (vdWh) put underneath a single graphene layer. In order to do so, we assess vdWh composed of hexagonal boron nitride and different types of transition metal dichalcogenides (TMDs). By performing realistic simulations that account for the contribution of each layer of the vdWh separately and including the importance of the substrate phonons, we show that one can achieve single-layer resolution by investigating the nonlocal nature of the Dirac plasmon-polaritons. The composition of the vdWh stack can be inferred from the plasmon-phonon coupling once it is composed by more than two TMD layers. Furthermore, we show that the bulk character of TMD stacks for plasmonic screening properties in the terahertz regime is reached only beyond 100 layers.

Abstract: Among the large variety of two-dimensional (2D) materials discovered to date, elemental monolayers that host superconductivity are very rare. Using ab initio calculations we show that recently synthesized gallium monolayers, coined gallenene, are intrinsically superconducting through electron-phonon coupling. We reveal that Ga-100 gallenene, a planar monolayer isostructural with graphene, is the structurally simplest 2D superconductor to date, furthermore hosting topological edge states due to its honeycomb structure. Our anisotropic Eliashberg calculations show distinctly three-gap superconductivity in Ga-100, in contrast to the alternative buckled Ga-010 gallenene which presents a single anisotropic superconducting gap. Strikingly, the critical temperature (T ( c )) of gallenene is in the range of 7-10 K, exceeding the T ( c ) of bulk gallium from which it is exfoliated. Finally we explore chemical functionalization of gallenene with hydrogen, and report induced multigap superconductivity with an enhanced T ( c ) in the resulting gallenane compound.

Abstract: Colloidal copper(I) sulfide (Cu2-xS) nanocrystals (NCs) have attracted much attention for a wide range of applications because of their unique optoelectronic properties, driving scientists to explore the potential of using Cu2-xS NCs as seeds in the synthesis of heteronanocrystals to achieve new multifunctional materials. Herein, we developed a multistep synthesis strategy toward Cu2-xS/ZnS heteronanorods. The Janus-type Cu2-xS/ZnS heteronanorods are obtained by the injection of hexagonal high-chalcocite Cu2-xS seed NCs in a hot zinc oleate solution in the presence of suitable surfactants, 20 s after the injection of sulfur precursors. The Cu2-xS seed NCs undergo rapid aggregation and coalescence in the first few seconds after the injection, forming larger NCs that act as the effective seeds for heteronucleation and growth of ZnS. The ZnS heteronucleation occurs on a single (100) facet of the Cu2-xS seed NCs and is followed by fast anisotropic growth along a direction that is perpendicular to the c-axis, thus leading to Cu2-xS/ZnS Janus-type heteronanorods with a sharp heterointerface. Interestingly, the high-chalcocite crystal structure of the injected Cu2-xS seed NCs is preserved in the Cu2-xS segments of the heteronanorods because of the highthermodynamic stability of this Cu2-xS phase. The Cu2-xS/ZnS heteronanorods are subsequently converted into single-component Cu2-xS and CuInS2 nanorods by postsynthetic topotactic cation exchange. This work expands the possibilities for the rational synthesis of colloidal multicomponent heteronanorods by allowing the design principles of postsynthetic heteroepitaxial seeded growth and nanoscale cation exchange to be combined, yielding access to a plethora of multicomponent heteronanorods with diameters in the quantum confinement regime.

Abstract: In this chapter, a statistical model-based method to count the number of atoms of monotype crystalline nanostructures from high-resolution annular dark-field (ADF) scanning transmission electron microscopy (STEM) images is discussed in detail together with a thorough study on the possibilities and inherent limitations. We show that this method can be applied to nanocrystals of arbitrary shape, size, and atom type. The validity of the atom-counting results is confirmed by means of detailed image simulations and it is shown that the high sensitivity of our method enables us to count atoms with single atom sensitivity.

Abstract: This chapter provides an overview of statistical and quantitative methodologies that have pushed (scanning) transmission electron microscopy ((S)TEM) toward accurate and precise measurements of unknown structure parameters for understanding the relation between the structure of a material and its properties. Hereby, statistical parameter estimation theory has extensively been used which enabled not only measuring atomic column positions, but also quantifying the number of atoms, and detecting atomic columns as accurately and precisely as possible from experimental images. As a general conclusion, it can be stated that advanced statistical techniques are ideal tools to perform quantitative electron microscopy at the atomic scale. In the future, statistical methods will continue to be developed and novel quantification procedures will open up new possibilities for studying material structures at the atomic scale.

Abstract: In this chapter, the principles of statistical parameter estimation theory for a quantitative analysis of atomic-resolution electron microscopy images are introduced. Within this framework, electron microscopy images are described by a parametric statistical model. Here, parametric models are introduced for different types of electron microscopy images: reconstructed exit waves, annular dark-field (ADF) scanning transmission electron microscopy (STEM) images, and simultaneously acquired ADF and annular bright-field (ABF) STEM images. Furthermore, the Cramér-Rao lower bound (CRLB) is introduced, i.e. a theoretical lower bound on the variance of any unbiased estimator. This CRLB is used to quantify the precision of the structure parameters of interest, such as the atomic column positions and the integrated atomic column intensities.

Abstract: Surface coating is a crucial method to mitigate the aging problem of high-Ni cathode active materials (CAMs). By avoiding the direct contact of the CAM and the electrolyte, side reactions are hindered. Commonly used techniques like wet or ALD coating are time consuming and costly. Therefore, a more cost-effective coating technique is desirable. Herein, a facile and fast dry powder coating process for CAMs with nanostructured fumed metal oxides are reported. As the model case, the coating of high-Ni NMC (LiNi0.7Mn0.15Co0.15O2) by nanostructured fumed Al2O3 is investigated. A high coverage of the CAM surface with an almost continuous coating layer is achieved, still showing some porosity. Electrochemical evaluation shows a significant increase in capacity retention, cycle life and rate performance of the coated NMC material. The coating layer protects the surface of the CAM successfully and prevents side reactions, resulting in reduced solid electrolyte interface (SEI) formation and charge transfer impedance during cycling. A mechanism on how the coating layer enhances the cycling performance is hypothesized. The stable coating layer effectively prevents crack formation and particle disintegration of the NMC. In depth analysis indicates partial formation of LixAl2O3/LiAlO2 in the coating layer during cycling, enhancing lithium ion diffusivity and thus, also the rate performance.

Abstract: Transmission electron microscopy (TEM) is an ideal tool to investigate nanomaterials. The information from TEM experiments allows us to link the structure and composition of nanomaterials to their intrinsic physical properties. However, despite the significant evolution of the TEM field during the last two decades, major progress is still possible through the development of optimal TEM techniques and supports. The results presented in this thesis focus on the optimization of sample supports and their application. Among the different options, graphene has previously been reported as useful sample support for electron microscopy due to its unparalleled properties, for example, it is the thinnest known support and provides a protective effect to the sample under investigation. Unfortunately, commercial graphene grids show poor quality, in terms of intactness and cleanness, inhibiting their wide application within the field. Therefore, this thesis focuses on the application of optimized graphene TEM grids, obtained by transferring high quality graphene using an advanced procedure. This improvement on the transfer has enabled the visualization of materials with low contrast and high sensitivity towards the electron beam, such as surface ligands capping gold nanoparticles or metal halide perovskites. Furthermore, the implemented protocol is not only of interest for conventional TEM grids but also a major benefit for in situ TEM studies, where the sample is investigated in real time under certain stimuli. Hence, the same graphene transfer technology can be also applied to advanced in situ MEMS holders dedicated for both heating and gas experiments, where the thickness and insulating nature of the silicon nitride (Si3N4) support may hamper some applications. By engineering periodic arrays of holes in their Si3N4 membrane by focused ion beam, onto which the graphene is transferred, it has been possible to get proof-of-concept 3D in situ investigations of heat-induced morphological and compositional transformations of complex nanosystems. As an example, it has enabled the investigation of the possible phase-transition of metal halide perovskites upon heating using 2D and 3D structural characterization. Moreover, it has allowed the study of in situ three-dimensional nanoparticle dynamics during gas phase catalysis as well as the first steps that would lead towards the design and creation of the first Graphene Gas Cell. Consequently, implementation of the advanced graphene transfer technology described in this thesis is envisaged to impact a broad range of future experiments.

Abstract: The strong correlated oxide systems attract a lot of attentions of scientists recently, the coexistence and interplay between various degrees of freedom, such as charge, spin and orbital, has been demonstrated to induce some fancy physical properties and phenomenon, including metal-insulator transition, high temperature superconductivity, colossal magnetoresistance. As a part of the strong correlated oxide systems, the ferroelectrics is abundant in both physical properties and application. First, if the electric dipole continuously rotating around a stable core then a topological structure is produced. If people could manipulate the topological structure and simultaneously observe the structure evolution, with external field applied on the topological structure, then it is very likely for such kind of ferroelectrics to be the next generation of storage, for it is reported to need low power input and produce high density of storage. In the other hand, in solids, charge polarity can one-to-one correspond to spin polarity phenomenologically, such as ferroelectricity and ferromagnetism, antiferroelectricity and antiferromagnetism, but ferrielectricity and ferrimagnetism kept telling a disparate story in microscopic level. The claimed “ferrielectrics” in existing research is equivalent to ferroelectric ones, thus the findings of such a real irreducible solids would complete the last piece of the ferroelectrics family. While solving the above two questions remain challengeable: the size of topological structure is small (typically below 10 nm), general characterization methods are insufficient for such high demand on space resolution, not to mention manipulating and observing its dynamic behavior at an atomic level. Here, employing the spherical aberration corrected electron microscope, we applied external field (heating and bias) on ferroelectrics. Combined with high-end characterization methods including the high-angle annular dark field (HAADF-STEM) image, Electron Energy Loss Spectroscopy (EELS) and integrated differential phase contrast (iDPC), the dynamic evolution of ferroelectrics are observed and analyzed. The main findings of this paper could be concluded as listed here: (1) PbTiO3(001)// SrTiO3(001) is grown on DyScO3 and SrRuO3 by pusled laser deposition, the atomical EDS mapping results reveal that the interface between PTO and STO is atomically sharp. Increasing the thickness of PTO from 1 uc to 21 uc, the topological structure wihtin PTO layer would transform from a/c domain to wave, vortex and finally flux closure domain. The geometric phase analysis results (GPA) reveal that above topological structures are corresponding to various strain. (2) Combined with in-situ biasing holder, the electric bias was applied on polar vortex, and it evolved from vortex (0 V) to polar wave (2 V) and finally polar down (5 V). EELS analysis was performed and we find that negative charge is gathered at vortex core, which turns the Ti4+ to Ti3+ there. The oxygen vacancy at negative polarization surface and the negative charge at the positive polarization surface realized the polarization screening of polar down domain. (3) Through the atomic inspection and analysis on lattice structure of BaFe2Se3, the near ladders within single unit are found to be different in degree of tetramerization, thus leading to a residual polarization along the a-axis. The further in-situ heating and biasing experiment was conducted on BaFe2Se3, and the strong and weak ladders are proved to be independent for their behavior under external field. This findings distinguishes ferrielectrics from ferroelectrics in solids.

Abstract: Currently, a large variety of materials are studied by transmission electron microscopy (TEM) as it offers the possibility to perform structural and elemental analysis at a local scale. Relatively recent advances in aberration correctors and electron sources allow the instrument to achieve atomic resolution. Along with these advances, a state-of-the-art technology has been reached in TEM. However, the instrument is far from being perfect and imperfections or external sources can make the interpretation of information troublesome. Environmental factors such as acoustic and mechanical vibrations, temperature fluctuations, etc., can induce sample drift and create image distortions. These distortions are enhanced in scanning operation because of the serial acquisition of the information, which are more apparent at atomic resolution as small field of views are imaged. In addition, scanning distortions are induced due to the finite time response of the scan coils. These types of distortions would reduce precision in atomic-scale strain analysis, for instance, in semiconductors. Most of the efforts to correct these distortions are focused on data processing techniques post-acquisition. Another limitation in TEM is beam damage effects. Beam damage arises because of the energy transferred to the sample in electron-sample interactions. In scanning TEM, at atomic resolution, the increased electron charge density (electron dose) carried on a sub-Å size electron probe may aggravate beam damage effects. Soft materials such as zeolites, organic, biological materials, etc., can be destroyed under irradiation limiting the amount of information that can be acquired. Current efforts to circumvent beam damage are mostly based on low electron dose acquisitions and data processing methods to maximize the signal at low dose conditions. In this thesis, a different approach is given to address drift and scanning distortions, as well as beam damage effects. Novel scan strategies are proposed for that purpose, which are shown to substantially overcome these issues compared to the standard scan method in TEM.

Abstract: Nanomaterialen kunnen uiterst interessante eigenschappen vertonen voor een verscheidenheid aan veelbelovende toepassingen, gaande van zonnecrème tot batterijen voor elektrische auto’s. Een nanometer is een miljard keer kleiner dan een meter. Op deze schaal kunnen de materiaaleigenschappen volledig verschillen van bulkmaterialen op grotere schaal. Bovendien hangen de eigenschappen van nanomaterialen sterk af van hun exacte grootte en vorm. Kleine verschillen in de posities van de atomen, in de grootte-orde van een picometer (nog eens duizend maal kleiner dan een nanometer), kunnen de fysische eigenschappen al drastisch beïnvloeden. Daarom is een betrouwbare kwantificering van de atomaire structuur van kritisch belang om de evolutie naar materiaalontwerp mogelijk te maken en inzicht te verwerven in de relatie tussen de fysische eigenschappen en de structuur van nanomaterialen. Daarnaast kan de atomaire structuur van nanomaterialen ook veranderen in de loop van de tijd ten gevolge van verschillende fysische processen. Het onderzoek dat in deze thesis gepresenteerd wordt, maakt het mogelijk om de dynamische structuurveranderingen van nanomaterialen betrouwbaar te kwantificeren op atomaire schaal door gebruik te maken van raster transmissie elektronenmicroscopie (STEM). Ik heb dit gerealiseerd door methodes te ontwikkelen waarmee ik het aantal atomen “achter elkaar” kan tellen in elke atoomkolom van een nanomateriaal, en dit op basis van beelden opgenomen met een elektronenmicroscoop. Een belangrijk verschil met telmethodes voor de analyse van een enkel beeld is het schatten van de kans dat een atoomkolom atomen zal verliezen of bijkrijgen van het ene naar het andere beeld in de tijdreeks. Deze kwantitatieve methode kan het ontrafelen van de tijdsafhankelijke structuur-eigenschappen relatie van een nanomateriaal mogelijk maken, wat uiteindelijk kan leiden tot efficiënter design en productie van nanomaterialen voor innovatieve toepassingen.

Abstract: Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between the two monolayers, coined as twist-angle, modifies the crystal symmetry and creates a superlattice with exciting properties. Here, we demonstrate an all-optical method for pixel-by-pixel mapping of the twist-angle with a resolution of 0.55(degrees), via polarization-resolved second harmonic generation (P-SHG) microscopy and we compare it with four-dimensional scanning transmission electron microscopy (4D STEM). It is found that the twist-angle imaging of WS2 bilayers, using the P-SHG technique is in excellent agreement with that obtained using electron diffraction. The main advantages of the optical approach are that the characterization is performed on the same substrate that the device is created on and that it is three orders of magnitude faster than the 4D STEM. We envisage that the optical P-SHG imaging could become the gold standard for the quality examination of TMD superlattice-based devices.