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  Author Title Year Publication Volume Times cited Additional Links Links
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. Direct and indirect band-to-band tunneling in germanium-based TFETs 2012 IEEE transactions on electron devices 59 212 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. Optimization of gate-on-source-only tunnel FETs with counter-doped pockets 2012 IEEE transactions on electron devices 59 72 UA library record; WoS full record; WoS citing articles doi
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. Signature of ballistic band-tail tunneling current in tunnel FET 2020 Ieee Transactions On Electron Devices 67 UA library record; WoS full record; WoS citing articles pdf doi
Bizindavyi, J.; Verhulst, A.S.; Smets, Q.; Verreck, D.; Sorée, B.; Groeseneken, G. Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes 2018 IEEE journal of the Electron Devices Society 6 5 UA library record; WoS full record; WoS citing articles url doi
Toledano-Luque, M.; Matagne, P.; Sibaja-Hernandez, A.; Chiarella, T.; Ragnarsson, L.-A.; Sorée, B.; Cho, M.; Mocuta, A.; Thean, A. Superior reliability of junctionless pFinFETs by reduced oxide electric field 2014 IEEE electron device letters 35 13 UA library record; WoS full record; WoS citing articles doi
Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. Temperature-dependent modeling and characterization of through-silicon via capacitance 2011 IEEE electron device letters 32 27 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Uniform strain in heterostructure tunnel field-effect transistors 2016 IEEE electron device letters 37 17 UA library record; WoS full record; WoS citing articles pdf url doi
Contino, A.; Ciofi, I.; Wu, X.; Asselberghs, I.; Celano, U.; Wilson, C.J.; Tokei, Z.; Groeseneken, G.; Sorée, B. Modeling of edge scattering in graphene interconnects 2018 IEEE electron device letters 39 1 UA library record; WoS full record; WoS citing articles pdf doi
Bizindavyi, J.; Verhulst, A.S.; Verreck, D.; Sorée, B.; Groeseneken, G. Large variation in temperature dependence of band-to-band tunneling current in tunnel devices 2019 IEEE electron device letters 40 UA library record; WoS full record; WoS citing articles pdf doi
Cantoro, M.; Klekachev, A.V.; Nourbakhsh, A.; Sorée, B.; Heyns, M.M.; de Gendt, S. Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy 2011 European physical journal : B : condensed matter and complex systems 79 10 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. Figure of merit for and identification of sub-60 mV/decade devices 2013 Applied physics letters 102 64 UA library record; WoS full record; WoS citing articles pdf doi
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. Impact of field-induced quantum confinement in tunneling field-effect devices 2011 Applied physics letters 98 76 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic 2014 Applied physics letters 105 10 UA library record; WoS full record; WoS citing articles doi
Sorée, B.; Magnus, W.; Vandenberghe, W. Low-field mobility in ultrathin silicon nanowire junctionless transistors 2011 Applied physics letters 99 20 UA library record; WoS full record; WoS citing articles url doi
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors 2012 Applied physics letters 100 25 UA library record; WoS full record; WoS citing articles doi
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections 2010 Applied Physics Letters 96 26 UA library record; WoS full record; WoS citing articles doi
Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors 2016 Applied physics letters 108 13 UA library record; WoS full record; WoS citing articles doi
Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. Can p-channel tunnel field-effect transistors perform as good as n-channel? 2014 Applied physics letters 105 8 UA library record; WoS full record; WoS citing articles url doi
Vanherck, J.; Bacaksiz, C.; Sorée, B.; Milošević, M.V.; Magnus, W. 2D ferromagnetism at finite temperatures under quantum scrutiny 2020 Applied Physics Letters 117 8 UA library record; WoS full record; WoS citing articles pdf doi
Zografos, O.; Dutta, S.; Manfrini, M.; Vaysset, A.; Sorée, B.; Naeemi, A.; Raghavan, P.; Lauwereins, R.; Radu, I.P. Non-volatile spin wave majority gate at the nanoscale 2017 AIP advances T2 – 61st Annual Conference on Magnetism and Magnetic Materials (MMM), OCT 31-NOV 04, 2016, New Orleans, LA 7 13 UA library record; WoS full record; WoS citing articles pdf doi
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects 2019 2D materials 6 3 UA library record; WoS full record; WoS citing articles url doi
Reyntjens, P.D.; Tiwari, S.; van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Magnetic properties and critical behavior of magnetically intercalated WSe₂ : a theoretical study 2021 2d Materials 8 1 UA library record; WoS full record; WoS citing articles url doi
Sels, D.; Sorée, B.; Groeseneken, G. 2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors 2010 UA library record
Sorée, B.; Pham, A.-T.; Sels, D.; Magnus, W. The junctionless nanowire transistor 2011 UA library record
Sorée, B.; Magnus, W.; Szepieniec, M.; Vandenbreghe, W.; Verhulst, A.; Pourtois, G.; Groeseneken, G.; de Gendt, S.; Heyns, M. Novel device concepts for nanotechnology : the nanowire pinch-off FET and graphene tunnelFET 2010 ECS transactions 28 UA library record; WoS full record; WoS citing articles
Van de Put, M.; Thewissen, M.; Magnus, W.; Sorée, B.; Sellier, J.M. Spectral force approach to solve the time-dependent Wigner-Liouville equation 2014 2014 International Workshop On Computational Electronics (iwce) UA library record; WoS full record;
Magnus, W.; Brosens, F.; Sorée, B. Time dependent transport in 1D micro- and nanostructures: solving the Boltzmann and Wigner-Boltzmann equations 2009 Journal of physics : conference series 193 2 UA library record; WoS full record; WoS citing articles url doi
Magnus, W.; Carrillo-Nunez, H.; Sorée, B. Transport in nanostructures 2011 UA library record
Verreck, D.; Van de Put, M.L.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Dabral, A.; Thean, A.; Groeseneken, G. 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record url doi
Moors, K.; Sorée, B.; Magnus, W. Analytic solution of Ando's surface roughness model with finite domain distribution functions 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record url
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