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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Verreck, D.; Van de Put, M.L.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Dabral, A.; Thean, A.; Groeseneken, G. |
15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors |
2015 |
18th International Workshop On Computational Electronics (iwce 2015) |
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UA library record; WoS full record |
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|
Moors, K.; Sorée, B.; Magnus, W. |
Analytic solution of Ando's surface roughness model with finite domain distribution functions |
2015 |
18th International Workshop On Computational Electronics (iwce 2015) |
|
|
UA library record; WoS full record |
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|
Moors, K.; Sorée, B.; Magnus, W. |
Modeling and tackling resistivity scaling in metal nanowires |
2015 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC |
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UA library record; WoS full record |
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Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B.; Fischetti, M.V. |
Modeling of inter-ribbon tunneling in graphene |
2015 |
18th International Workshop On Computational Electronics (iwce 2015) |
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UA library record; WoS full record |
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Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. |
Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors |
2016 |
Solid-State Device Research (ESSDERC), European Conference
T2 – 46th European Solid-State Device Research Conference (ESSDERC) / 42nd, European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND |
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UA library record; WoS full record |
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Tiwari, S.; Van de Put, M.L.; Temst, K.; Vandenberghe, W.G.; Sorée, B. |
Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators |
2023 |
Physical review applied |
19 |
|
UA library record; WoS full record; WoS citing articles |
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects |
2019 |
2D materials |
6 |
3 |
UA library record; WoS full record; WoS citing articles |
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Reyntjens, P.D.; Tiwari, S.; van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Magnetic properties and critical behavior of magnetically intercalated WSe₂ : a theoretical study |
2021 |
2d Materials |
8 |
1 |
UA library record; WoS full record; WoS citing articles |
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Zografos, O.; Dutta, S.; Manfrini, M.; Vaysset, A.; Sorée, B.; Naeemi, A.; Raghavan, P.; Lauwereins, R.; Radu, I.P. |
Non-volatile spin wave majority gate at the nanoscale |
2017 |
AIP advances
T2 – 61st Annual Conference on Magnetism and Magnetic Materials (MMM), OCT 31-NOV 04, 2016, New Orleans, LA |
7 |
13 |
UA library record; WoS full record; WoS citing articles |
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Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. |
Figure of merit for and identification of sub-60 mV/decade devices |
2013 |
Applied physics letters |
102 |
64 |
UA library record; WoS full record; WoS citing articles |
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Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. |
Impact of field-induced quantum confinement in tunneling field-effect devices |
2011 |
Applied physics letters |
98 |
76 |
UA library record; WoS full record; WoS citing articles |
|
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Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. |
Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic |
2014 |
Applied physics letters |
105 |
10 |
UA library record; WoS full record; WoS citing articles |
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Sorée, B.; Magnus, W.; Vandenberghe, W. |
Low-field mobility in ultrathin silicon nanowire junctionless transistors |
2011 |
Applied physics letters |
99 |
20 |
UA library record; WoS full record; WoS citing articles |
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Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. |
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors |
2012 |
Applied physics letters |
100 |
25 |
UA library record; WoS full record; WoS citing articles |
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O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. |
Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections |
2010 |
Applied Physics Letters |
96 |
26 |
UA library record; WoS full record; WoS citing articles |
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Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. |
Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors |
2016 |
Applied physics letters |
108 |
13 |
UA library record; WoS full record; WoS citing articles |
|
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Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. |
Can p-channel tunnel field-effect transistors perform as good as n-channel? |
2014 |
Applied physics letters |
105 |
8 |
UA library record; WoS full record; WoS citing articles |
|
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Vanherck, J.; Bacaksiz, C.; Sorée, B.; Milošević, M.V.; Magnus, W. |
2D ferromagnetism at finite temperatures under quantum scrutiny |
2020 |
Applied Physics Letters |
117 |
8 |
UA library record; WoS full record; WoS citing articles |
|
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Cantoro, M.; Klekachev, A.V.; Nourbakhsh, A.; Sorée, B.; Heyns, M.M.; de Gendt, S. |
Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy |
2011 |
European physical journal : B : condensed matter and complex systems |
79 |
10 |
UA library record; WoS full record; WoS citing articles |
|
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Toledano-Luque, M.; Matagne, P.; Sibaja-Hernandez, A.; Chiarella, T.; Ragnarsson, L.-A.; Sorée, B.; Cho, M.; Mocuta, A.; Thean, A. |
Superior reliability of junctionless pFinFETs by reduced oxide electric field |
2014 |
IEEE electron device letters |
35 |
13 |
UA library record; WoS full record; WoS citing articles |
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Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. |
Temperature-dependent modeling and characterization of through-silicon via capacitance |
2011 |
IEEE electron device letters |
32 |
27 |
UA library record; WoS full record; WoS citing articles |
|
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Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. |
Uniform strain in heterostructure tunnel field-effect transistors |
2016 |
IEEE electron device letters |
37 |
17 |
UA library record; WoS full record; WoS citing articles |
|
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Contino, A.; Ciofi, I.; Wu, X.; Asselberghs, I.; Celano, U.; Wilson, C.J.; Tokei, Z.; Groeseneken, G.; Sorée, B. |
Modeling of edge scattering in graphene interconnects |
2018 |
IEEE electron device letters |
39 |
1 |
UA library record; WoS full record; WoS citing articles |
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Bizindavyi, J.; Verhulst, A.S.; Verreck, D.; Sorée, B.; Groeseneken, G. |
Large variation in temperature dependence of band-to-band tunneling current in tunnel devices |
2019 |
IEEE electron device letters |
40 |
|
UA library record; WoS full record; WoS citing articles |
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|
Bizindavyi, J.; Verhulst, A.S.; Smets, Q.; Verreck, D.; Sorée, B.; Groeseneken, G. |
Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes |
2018 |
IEEE journal of the Electron Devices Society |
6 |
5 |
UA library record; WoS full record; WoS citing articles |
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|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Direct and indirect band-to-band tunneling in germanium-based TFETs |
2012 |
IEEE transactions on electron devices |
59 |
212 |
UA library record; WoS full record; WoS citing articles |
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|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. |
Optimization of gate-on-source-only tunnel FETs with counter-doped pockets |
2012 |
IEEE transactions on electron devices |
59 |
72 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. |
Signature of ballistic band-tail tunneling current in tunnel FET |
2020 |
Ieee Transactions On Electron Devices |
67 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology |
2009 |
Journal of applied physics |
106 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach |
2011 |
Journal of applied physics |
109 |
41 |
UA library record; WoS full record; WoS citing articles |
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