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Records |
Links |
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Author |
Hole, D.E.; Townsend, P.D.; Barton, J.D.; Nistor, L.C.; van Landuyt, J. |
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Title |
Gallium colloid formation during ion implantation of glass |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Journal of non-crystalline solids |
Abbreviated Journal |
J Non-Cryst Solids |
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Volume |
180 |
Issue |
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Pages |
266-274 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Corporate Author |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1995QB59400018 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-3093; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.766 |
Times cited |
34 |
Open Access |
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Notes |
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Approved |
PHYSICS, APPLIED 28/145 Q1 # |
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Call Number |
UA @ lucian @ c:irua:13288 |
Serial |
1313 |
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Permanent link to this record |
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Author |
Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
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Title |
A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions |
Type |
A1 Journal article |
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Year |
2003 |
Publication |
The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical |
Abbreviated Journal |
J Phys Chem B |
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Volume |
107 |
Issue |
16 |
Pages |
3690-3696 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA) |
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Abstract |
An alternative pathway to assemble mesoporous molecular sieve silicas is developed using nonionic alkylamines and N,N-dimethylalkylamines (SO) as structure-directing agents in acidic conditions. The synthesized mesostructures possess wormhole-like frameworks with pore sizes and pore volumes in the range of 20-90 Angstrom and 0.5-1.3 cm(3)/g, respectively. The formation of the mesophase is controlled by a counterion-mediated mechanism of the type (S(0)H(+))(X(-)I(+)), where S(0)H(+) are protonated water molecules that are hydrogen bonded to the lone electron pairs on the amine surfactant headgroups (S(0)H(+)), X(-) is the counteranion originating from the acid, and I(+) are the positively charged (protonated) silicate species. We found that the stronger the ion X(-) is bonded to S(0)H(+), the more it catalyzes the silica condensation into (S(0)H(+))(X(-)I(+)). Br(-) is shown to be a strong binding anion and therefore a fast silica polymerization promoter compared to Cl(-) resulting in the formation of a higher quality mesophase for the Br(-) syntheses. We also showed that the polymerization rate of the silica, dictated by the counterion, controls the morphology of the mesostructures from nonuniform agglomerated blocks in the case of Br(-) syntheses to spherical particles for the Cl(-) syntheses. Next to many benefits such as low temperature, short synthesis time, and the use of inexpensive, nontoxic, and easily extractable amine templates, the developed materials have a remarkable higher thermal and hydrothermal stability compared to hexagonal mesoporous silica, which is also prepared with nonionic amines but formed through the S(0)I(0) mechanism. |
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Corporate Author |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
000182350200005 |
Publication Date |
2003-04-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1520-6106;1520-5207; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.177 |
Times cited |
9 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.177; 2003 IF: 3.679 |
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Call Number |
UA @ lucian @ c:irua:103300 |
Serial |
24 |
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Permanent link to this record |
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Author |
Linssen, T.; Cool, P.; Baroudi, M.; Cassiers, K.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
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Title |
Leached natural saponite as the silicate source in the synthesis of aluminosilicate hexagonal mesoporous materials |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical |
Abbreviated Journal |
J Phys Chem B |
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Volume |
106 |
Issue |
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Pages |
4470-4476 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
000175356900019 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1520-6106;1520-5207; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.177 |
Times cited |
23 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.177; 2002 IF: 3.611 |
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Call Number |
UA @ lucian @ c:irua:46279 |
Serial |
1811 |
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Permanent link to this record |
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Author |
Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
Electron microscopy of carbon nanotubes and related structures |
Type |
A1 Journal article |
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Year |
1997 |
Publication |
The journal of physics and chemistry of solids |
Abbreviated Journal |
J Phys Chem Solids |
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Volume |
58 |
Issue |
11 |
Pages |
1807-1813 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000071510100029 |
Publication Date |
2003-04-05 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-3697; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.059 |
Times cited |
12 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.059; 1997 IF: 1.083 |
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Call Number |
UA @ lucian @ c:irua:21425 |
Serial |
959 |
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Permanent link to this record |
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Author |
Nistor, L.C.; Nistor, S.V.; Dinca, G.; Georgeoni, P.; van Landuyt, J.; Manfredotti, C.; Vittone, E. |
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Title |
Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
Journal of physics : condensed matter |
Abbreviated Journal |
J Phys-Condens Mat |
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Volume |
14 |
Issue |
44 |
Pages |
10983-10988 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp(3) bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 +/- 15 mJ m(-2) is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond. |
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Corporate Author |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000179541700114 |
Publication Date |
2002-10-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0953-8984; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.649 |
Times cited |
7 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.649; 2002 IF: 1.775 |
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Call Number |
UA @ lucian @ c:irua:103328 |
Serial |
2061 |
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Permanent link to this record |
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Author |
Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. |
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Title |
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
Journal of physics : condensed matter
T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY |
Abbreviated Journal |
J Phys-Condens Mat |
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Volume |
14 |
Issue |
48 |
Pages |
13185-13193 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000180091100068 |
Publication Date |
2002-11-23 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0953-8984; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.649 |
Times cited |
3 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.649; 2002 IF: 1.775 |
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Call Number |
UA @ lucian @ c:irua:103326 |
Serial |
2477 |
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Permanent link to this record |
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Author |
Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Pervov, V.S.; Makhonina, E.V. |
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Title |
Electron microscopic and X-ray structural analysis of the layered crystals TaReSe4: structure, defect structure, and microstructure, including rotation twins |
Type |
A1 Journal article |
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Year |
1998 |
Publication |
Journal of solid state chemistry |
Abbreviated Journal |
J Solid State Chem |
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Volume |
135 |
Issue |
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Pages |
235-255 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000072900200008 |
Publication Date |
2002-10-07 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-4596; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.299 |
Times cited |
3 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.299; 1998 IF: 1.432 |
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Call Number |
UA @ lucian @ c:irua:29672 |
Serial |
938 |
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Permanent link to this record |
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Author |
Ranjan, R.; Pandey, D.; Schuddinck, W.; Richard, O.; De Meulenaere, P.; van Landuyt, J.; Van Tendeloo, G. |
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Title |
Evolution of crystallographic phases in (Sr1-xCax)TiO3 with composition (x) |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Journal of solid state chemistry |
Abbreviated Journal |
J Solid State Chem |
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Volume |
162 |
Issue |
1 |
Pages |
20-28 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000172586400003 |
Publication Date |
2002-09-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-4596; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.299 |
Times cited |
45 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.299; 2001 IF: 1.614 |
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Call Number |
UA @ lucian @ c:irua:54711 |
Serial |
1098 |
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Permanent link to this record |
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Author |
Volkov, V.V.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Busheva, E.E.; Shabunina, G.G.; Aminov, T.G.; Novotortsev, V.M. |
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Title |
HREM image analysis up to structure determination of SbCrSe3: a new 1D ferromagnet |
Type |
A1 Journal article |
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Year |
1997 |
Publication |
Journal of solid state chemistry |
Abbreviated Journal |
J Solid State Chem |
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Volume |
132 |
Issue |
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Pages |
257-266 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1997YE01700005 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-4596 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.299 |
Times cited |
1 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.299; 1997 IF: 1.486 |
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Call Number |
UA @ lucian @ c:irua:21421 |
Serial |
1500 |
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Permanent link to this record |
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Author |
Shpanchenko, R.V.; Nistor, L.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. |
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Title |
Structural studies on new ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Journal of solid state chemistry |
Abbreviated Journal |
J Solid State Chem |
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Volume |
114 |
Issue |
2 |
Pages |
560-574 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The ternary oxides Ba8Ta4Ti3O24 and Ba10Ta7.04Ti1.2O30 were synthesized and their crystal structures and defects were studied by means of X-ray powder diffraction, electron diffraction, and high resolution electron microscopy. The crystal structure of Ba8Ta4Ti3O24 is based on the 8H (cchc)(2) close-packed stacking (a 10.0314 Angstrom, c = 18.869 Angstrom, SG P6(3)/mcm, Z = 3) and that of Ba10Ta7.04Ti1.2O30 and on the 10H (cchcc)(2) close-packed stacking (a = 5.7981 Angstrom, c = 23.755 Angstrom, SG P6(3)/mmc, Z = 1) of BaO3 layers. The structural refinements gave the following values for the R factors for Ba8Ta4Ti3O24 (Ba10Ta7.04Ti1.2O30) R(I) = 0.041 (0.039), R(P) = 0.108 (0.118), and R(wP) = 0.094 (0.099). The main feature of both structures is the presence of two types of face-sharing octahedra (FSO) with different occupancies by Ta atoms, Ti atoms, and vacancies, which results in the formation of a superstructure. It was shown that in the Ba8Ta4Ti3O24 structure these pairs of FSO occur in an ordered fashion and in the Ba10Ta7.04Ti1.2O30 structure in a disordered fashion. The existence of the wide range of solid solutions was shown to be also a consequence of the presence of one of the two types of face-sharing octahedra. (C) 1995 Academic Press, Inc, |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1995QH33100040 |
Publication Date |
2002-10-07 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-4596; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.133 |
Times cited |
23 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:13289 |
Serial |
3261 |
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Permanent link to this record |
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Author |
Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A. |
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Title |
Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Journal of vacuum science and technology: A: vacuum surfaces and films |
Abbreviated Journal |
J Vac Sci Technol A |
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Volume |
17 |
Issue |
1 |
Pages |
249-255 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000078136300038 |
Publication Date |
2002-07-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0734-2101; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.374 |
Times cited |
8 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.374; 1999 IF: 1.742 |
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Call Number |
UA @ lucian @ c:irua:29689 |
Serial |
581 |
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Permanent link to this record |
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Author |
Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.; Briers, J.; Bao, Y.; Geise, H.J. |
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Title |
An electron microscopic study of highly oriented undoped and FeCl3-doped poly (p-phenylenevinylene) |
Type |
A1 Journal article |
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Year |
1996 |
Publication |
Macromolecules |
Abbreviated Journal |
Macromolecules |
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Volume |
29 |
Issue |
5 |
Pages |
1554-1561 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
A1996TY13900024 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0024-9297;1520-5835; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
5.8 |
Times cited |
10 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:15452 |
Serial |
939 |
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Permanent link to this record |
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Author |
Udoh, K.-I.; El- Araby, A.M.; Tanaka, Y.; Hisatsune, K.; Yasuda, K.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
Structural aspects of AuCu I or AuCu II and a cuboidal black configuration of f.c.c. disordered phase in AuCu-Pt and AuCu-Ag pseudobinary alloys |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Materials science and engineering: part A: structural materials: properties, microstructure and processing |
Abbreviated Journal |
Mat Sci Eng A-Struct |
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Volume |
203 |
Issue |
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Pages |
154-164 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
|
Wos |
A1995TM62800016 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0921-5093; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.567 |
Times cited |
15 |
Open Access |
|
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|
Notes |
|
Approved |
|
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|
Call Number |
UA @ lucian @ c:irua:13298 |
Serial |
3205 |
|
Permanent link to this record |
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Author |
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
|
|
Title |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Materials science in semiconductor processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
|
|
Volume |
4 |
Issue |
1/3 |
Pages |
109-111 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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|
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Language |
|
Wos |
000167727200026 |
Publication Date |
2002-10-14 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1369-8001; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
|
|
Impact Factor |
2.359 |
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.359; 2001 IF: 0.419 |
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|
Call Number |
UA @ lucian @ c:irua:94967 |
Serial |
343 |
|
Permanent link to this record |
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|
|
Author |
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
|
|
Title |
The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures |
Type |
A1 Journal article |
|
Year |
2001 |
Publication |
Materials science in semiconductor processing |
Abbreviated Journal |
Mat Sci Semicon Proc |
|
|
Volume |
4 |
Issue |
1/3 |
Pages |
117-119 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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Language |
|
Wos |
000167727200028 |
Publication Date |
2002-10-14 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1369-8001; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.359 |
Times cited |
6 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.359; 2001 IF: 0.419 |
|
|
Call Number |
UA @ lucian @ c:irua:94968 |
Serial |
3602 |
|
Permanent link to this record |
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|
|
Author |
Schryvers, D.; de Saegher, B.; van Landuyt, J. |
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|
Title |
Electron microscopy and diffraction study of the composition dependency of the 3R microtwinned martensite in Ni-Al |
Type |
A1 Journal article |
|
Year |
1991 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
|
|
Volume |
26 |
Issue |
|
Pages |
57-66 |
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|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
A1991EU98500007 |
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0025-5408 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.288 |
Times cited |
11 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:48348 |
Serial |
943 |
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Permanent link to this record |
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Author |
Rembeza, E.S.; Richard, O.; van Landuyt, J. |
|
|
Title |
Influence of laser and isothermal treatments on microstructural properties of SnO2 films |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
|
|
Volume |
34 |
Issue |
10/11 |
Pages |
1527-1533 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
|
Wos |
000084625300006 |
Publication Date |
2002-07-25 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0025-5408; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.446 |
Times cited |
17 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.446; 1999 IF: 0.840 |
|
|
Call Number |
UA @ lucian @ c:irua:29691 |
Serial |
1626 |
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Permanent link to this record |
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Author |
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.; Dinescu, M. |
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Title |
TEM study of laser induced phase transition in iron thin films |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
|
|
Volume |
29 |
Issue |
1 |
Pages |
63-71 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Laser induced phase transition from b.c.c.(alpha) to f.c.c.(gamma) iron thin films is studied by high resolution TEM. The iron film has been covered on both sides with carbon layers to protect it against oxidation. Single pulse, tau FWHM = 20ns KrF (lambda = 248nm) excimer laser irradiation was performed in air with the film on the substrate. The laser pulse acts like a heat pulse followed by a rapid quenching revealing sequential aspects of the phase transition process. The presence of a fine mixture of the alpha + gamma phases between the alpha and gamma regions of the film has been interpreted as an incomplet transformation. The results are explained by assuming that the transformation took place via a phonon drag mechanism. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
|
Wos |
A1994ML03000008 |
Publication Date |
2003-06-21 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0025-5408; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.288 |
Times cited |
2 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:99945 |
Serial |
3488 |
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Permanent link to this record |
|
|
|
|
Author |
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. |
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|
Title |
Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization |
Type |
A1 Journal article |
|
Year |
2000 |
Publication |
Materials science forum
T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA |
Abbreviated Journal |
Mater Sci Forum |
|
|
Volume |
338-3 |
Issue |
|
Pages |
309-312 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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|
Abstract |
In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Trans tech publications ltd |
Place of Publication |
Zurich-uetikon |
Editor |
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Language |
|
Wos |
000165996700075 |
Publication Date |
0000-00-00 |
|
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
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|
ISSN |
0255-5476 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
2 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:104262 |
Serial |
1071 |
|
Permanent link to this record |
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|
|
Author |
Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
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Title |
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Materials science and technology |
Abbreviated Journal |
Mater Sci Tech-Lond |
|
|
Volume |
11 |
Issue |
11 |
Pages |
1194-1202 |
|
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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|
Abstract |
Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Inst Materials |
Place of Publication |
London |
Editor |
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Language |
|
Wos |
A1995TQ95100016 |
Publication Date |
2014-01-09 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0267-0836;1743-2847; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
0.995 |
Times cited |
7 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:95911 |
Serial |
2654 |
|
Permanent link to this record |
|
|
|
|
Author |
Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. |
|
|
Title |
Some examples of electron microscopy studies of microstructures and phase transitions in solids |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Meccanica |
Abbreviated Journal |
Meccanica |
|
|
Volume |
30 |
Issue |
|
Pages |
433-438 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
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Corporate Author |
|
Thesis |
|
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Publisher |
|
Place of Publication |
Milano |
Editor |
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Language |
|
Wos |
A1995TD08800003 |
Publication Date |
2005-04-21 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0025-6455;1572-9648; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.949 |
Times cited |
1 |
Open Access |
|
|
|
Notes |
|
Approved |
CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 # |
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|
Call Number |
UA @ lucian @ c:irua:13170 |
Serial |
3054 |
|
Permanent link to this record |
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|
|
Author |
Ignatova, V.A.; Lebedev, O.I.; Wätjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. |
|
|
Title |
Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation |
Type |
A1 Journal article |
|
Year |
2002 |
Publication |
Microchimica acta |
Abbreviated Journal |
Microchim Acta |
|
|
Volume |
139 |
Issue |
|
Pages |
77-81 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Wien |
Editor |
|
|
|
Language |
|
Wos |
000175560300012 |
Publication Date |
2003-03-05 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0026-3672;1436-5073; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
4.58 |
Times cited |
3 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 4.58; 2002 IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:38378 |
Serial |
2420 |
|
Permanent link to this record |
|
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|
|
Author |
De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
|
|
Title |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers |
Type |
A1 Journal article |
|
Year |
1999 |
Publication |
Microelectronic engineering |
Abbreviated Journal |
Microelectron Eng |
|
|
Volume |
45 |
Issue |
2-3 |
Pages |
277-282 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Amsterdam |
Editor |
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|
Language |
|
Wos |
000081748600023 |
Publication Date |
2002-07-25 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0167-9317; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
|
|
Impact Factor |
1.806 |
Times cited |
|
Open Access |
|
|
|
Notes |
Fwo-G.0051.97; Fwo-G.00117.86 |
Approved |
Most recent IF: 1.806; 1999 IF: 0.815 |
|
|
Call Number |
UA @ lucian @ c:irua:95791 |
Serial |
47 |
|
Permanent link to this record |
|
|
|
|
Author |
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. |
|
|
Title |
The study of partially ordered 11/20 alloys by HREM |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Microscopy research and technique |
Abbreviated Journal |
Microsc Res Techniq |
|
|
Volume |
25 |
Issue |
|
Pages |
169-170 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
A1993LB60700007 |
Publication Date |
2005-02-23 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1059-910X;1097-0029; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
|
|
Impact Factor |
1.154 |
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 28/145 Q1 # |
|
|
Call Number |
UA @ lucian @ c:irua:6785 |
Serial |
3331 |
|
Permanent link to this record |
|
|
|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J. |
|
|
Title |
Transmission electron microscopy studies of (111) twinned silver halide microcrystals |
Type |
A1 Journal article |
|
Year |
1998 |
Publication |
Microscopy research and technique |
Abbreviated Journal |
Microsc Res Techniq |
|
|
Volume |
42 |
Issue |
|
Pages |
85-99 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000075521300003 |
Publication Date |
2002-08-25 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1059-910X;1097-0029; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.147 |
Times cited |
8 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 1.147; 1998 IF: 0.765 |
|
|
Call Number |
UA @ lucian @ c:irua:29676 |
Serial |
3713 |
|
Permanent link to this record |
|
|
|
|
Author |
Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. |
|
|
Title |
Microstructure of Mn-doped, spin-cast FeSi2 |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Journal of electron microscopy |
Abbreviated Journal |
Microscopy-Jpn |
|
|
Volume |
46 |
Issue |
3 |
Pages |
221-225 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Tokyo |
Editor |
|
|
|
Language |
|
Wos |
A1997XP43400004 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
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Series Issue |
|
Edition |
|
|
|
ISSN |
0022-0744; 1477-9986 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
0.9 |
Times cited |
3 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
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|
Call Number |
UA @ lucian @ c:irua:21410 |
Serial |
2070 |
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Permanent link to this record |
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Author |
Van Tendeloo, G.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; Amelinckx, S. |
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Title |
Up close: Center for Electron Microscopy of Materials Science at the University of Antwerp |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
MRS bulletin |
Abbreviated Journal |
Mrs Bull |
|
|
Volume |
|
Issue |
|
Pages |
57-59 |
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|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Pittsburgh, Pa |
Editor |
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Language |
|
Wos |
A1994PH66300015 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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|
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0883-7694 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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|
Impact Factor |
5.667 |
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:9996 |
Serial |
3821 |
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Permanent link to this record |
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Author |
Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
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Title |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
Type |
A1 Journal article |
|
Year |
2000 |
Publication |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
Abbreviated Journal |
Mrs Internet J N S R |
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|
Volume |
5 |
Issue |
s:[1] |
Pages |
art. no.-W11.38 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Materials research society |
Place of Publication |
Warrendale |
Editor |
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Language |
|
Wos |
000090103600097 |
Publication Date |
0000-00-00 |
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Series Editor |
|
Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
|
|
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ISSN |
1092-5783 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:103471 |
Serial |
423 |
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Permanent link to this record |
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Author |
Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. |
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Title |
Defect characterization in high temperature implanted 6H-SiC using TEM |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Nuclear instruments and methods in physics research: B |
Abbreviated Journal |
Nucl Instrum Meth B |
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Volume |
127/128 |
Issue |
|
Pages |
347-349 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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|
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
|
Editor |
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Language |
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Wos |
A1997XG60500078 |
Publication Date |
2002-07-25 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.109 |
Times cited |
17 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 1.109; 1997 IF: 1.016 |
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|
Call Number |
UA @ lucian @ c:irua:21411 |
Serial |
613 |
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Permanent link to this record |
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Author |
Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. |
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Title |
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France |
Abbreviated Journal |
Nucl Instrum Meth B |
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|
Volume |
120 |
Issue |
1-4 |
Pages |
186-189 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
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Language |
|
Wos |
A1996VZ24500040 |
Publication Date |
2002-07-26 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.124 |
Times cited |
2 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:95882 |
Serial |
947 |
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Permanent link to this record |