|
Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. |
Impact of field-induced quantum confinement in tunneling field-effect devices |
2011 |
Applied physics letters |
98 |
76 |
UA library record; WoS full record; WoS citing articles |
|
|
Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. |
Temperature-dependent modeling and characterization of through-silicon via capacitance |
2011 |
IEEE electron device letters |
32 |
27 |
UA library record; WoS full record; WoS citing articles |
|
|
Sels, D.; Sorée, B.; Groeseneken, G. |
Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor |
2011 |
Journal of computational electronics |
10 |
12 |
UA library record; WoS full record; WoS citing articles |
|
|
Cantoro, M.; Klekachev, A.V.; Nourbakhsh, A.; Sorée, B.; Heyns, M.M.; de Gendt, S. |
Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy |
2011 |
European physical journal : B : condensed matter and complex systems |
79 |
10 |
UA library record; WoS full record; WoS citing articles |
|
|
Magnus, W.; Carrillo-Nunez, H.; Sorée, B. |
Transport in nanostructures |
2011 |
|
|
|
UA library record |
|
|
Sorée, B.; Pham, A.-T.; Sels, D.; Magnus, W. |
The junctionless nanowire transistor |
2011 |
|
|
|
UA library record |
|
|
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. |
Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections |
2010 |
Applied Physics Letters |
96 |
26 |
UA library record; WoS full record; WoS citing articles |
|
|
Nourbakhsh, A.; Cantoro, M.; Klekachev, A.; Clemente, F.; Sorée, B.; van der Veen, M.H.; Vosch, T.; Stesmans, A.; Sels, B.; de Gendt, S. |
Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing |
2010 |
Journal Of Physical Chemistry C |
114 |
54 |
UA library record; WoS full record; WoS citing articles |
|
|
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. |
Zener tunneling in semiconductors under nonuniform electric fields |
2010 |
Journal of applied physics |
107 |
22 |
UA library record; WoS full record; WoS citing articles |
|
|
Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. |
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor |
2010 |
Journal Of Applied Physics |
107 |
150 |
UA library record; WoS full record; WoS citing articles |
|
|
Sorée, B.; Magnus, W.; Szepieniec, M.; Vandenbreghe, W.; Verhulst, A.; Pourtois, G.; Groeseneken, G.; de Gendt, S.; Heyns, M. |
Novel device concepts for nanotechnology : the nanowire pinch-off FET and graphene tunnelFET |
2010 |
ECS transactions |
28 |
|
UA library record; WoS full record; WoS citing articles |
|
|
Sels, D.; Sorée, B.; Groeseneken, G. |
2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors |
2010 |
|
|
|
UA library record |
|
|
Magnus, W.; Brosens, F.; Sorée, B. |
Time dependent transport in 1D micro- and nanostructures: solving the Boltzmann and Wigner-Boltzmann equations |
2009 |
Journal of physics : conference series |
193 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. |
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers |
2009 |
Journal of applied physics |
106 |
29 |
UA library record; WoS full record; WoS citing articles |
|
|
Magnus, W.; Brosens, F.; Sorée, B. |
Modeling drive currents and leakage currents : a dynamic approach |
2009 |
Journal of computational electronics |
8 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology |
2009 |
Journal of applied physics |
106 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Tunneling-lifetime model for metal-oxide-semiconductor structures |
2009 |
Physical review : B : solid state |
80 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; de Meyer, K.; Meuris, M.; Heyns, M. |
General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors |
2008 |
Journal of computational electronics |
7 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
Compemolle, S.; Pourtois, G.; Sorée, B.; Magnus, W.; Chibotaru, L.F.; Ceulemans, A. |
Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference |
2008 |
Physical review : B : condensed matter and materials physics |
77 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics |
2008 |
Solid state communications |
147 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
Sorée, B.; Magnus, W.; Pourtois, G. |
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode |
2008 |
Journal of computational electronics |
7 |
70 |
UA library record; WoS full record; WoS citing articles |
|
|
Sorée, B.; Magnus, W. |
Quantized conductance without reservoirs : method of the nonequilibrium statistical operator |
2007 |
Journal of computational electronics |
6 |
|
UA library record; WoS full record |
|
|
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. |
A method to calculate tunneling leakage currents in silicon inversion layers |
2006 |
Journal of applied physics |
100 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. |
First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts |
2005 |
Microelectronic engineering |
80 |
31 |
UA library record; WoS full record; WoS citing articles |
|
|
Lujan, G.S.; Magnus, W.; Sorée, B.; Ragnarsson, L.A.; Trojman, L.; Kubicek, S.; De Gendt, S.; Heyns, A.; De Meyer, K. |
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility |
2005 |
Microelectronic engineering |
80 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor |
2004 |
Journal of applied physics |
96 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor |
2003 |
Journal of applied physics |
93 |
16 |
UA library record; WoS full record; WoS citing articles |
|
|
Balaban, S.N.; Pokatilov, E.P.; Fomin, V.M.; Gladilin, V.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; van Rossum, M.; Sorée, B. |
Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET |
2002 |
Solid-State Electronics |
46 |
16 |
UA library record; WoS full record; WoS citing articles |
|