toggle visibility
Search within Results:
Display Options:

Select All    Deselect All
List View
 |   | 
   print
  Author Title Year Publication Volume Times cited Additional Links (up) Links
Neyts, E.C.; Khalilov, U.; Pourtois, G.; van Duin, A.C.T. Hyperthermal oxygen interacting with silicon surfaces : adsorption, implantation, and damage creation 2011 The journal of physical chemistry: C : nanomaterials and interfaces 115 28 UA library record; WoS full record; WoS citing articles doi
Lindner, H.; Bogaerts, A. Multi-element model for the simulation of inductively coupled plasmas : effects of helium addition to the central gas stream 2011 Spectrochimica acta: part B : atomic spectroscopy 66 28 UA library record; WoS full record; WoS citing articles doi
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Structural and vibrational properties of amorphous GeO2 from first-principles 2011 Applied physics letters 98 226 UA library record; WoS full record; WoS citing articles doi
Tinck, S.; Bogaerts, A.; Shamiryan, D. Simultaneous etching and deposition processes during the etching of silicon with a Cl2/O2/Ar inductively coupled plasma 2011 Plasma processes and polymers 8 5 UA library record; WoS full record; WoS citing articles doi
Tinck, S.; Boullart, W.; Bogaerts, A. Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching : effects of SiO2 chamber wall coating 2011 Plasma sources science and technology 20 22 UA library record; WoS full record; WoS citing articles pdf doi
Delabie, A.; Sioncke, S.; Rip, J.; van Elshocht, S.; Caymax, M.; Pourtois, G.; Pierloot, K. Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium 2011 The journal of physical chemistry: C : nanomaterials and interfaces 115 9 UA library record; WoS full record; WoS citing articles doi
Nourbakhsh, A.; Cantoro, M.; Klekachev, A.V.; Pourtois, G.; Vosch, T.; Hofkens, J.; van der Veen, M.H.; Heyns, M.M.; de Gendt, S.; Sels, B.F. Single layer vs bilayer graphene : a comparative study of the effects of oxygen plasma treatment on their electronic and optical properties 2011 The journal of physical chemistry: C : nanomaterials and interfaces 115 46 UA library record; WoS full record; WoS citing articles doi
Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Electronic properties of two-dimensional hexagonal germanium 2010 Applied physics letters 96 86 UA library record; WoS full record; WoS citing articles doi
Mao, M.; Wang, Y.N.; Bogaerts, A. Numerical study of the plasma chemistry in inductively coupled SF6 and SF6/AR plasmas used for deep silicon etching applications 2011 Journal of physics: D: applied physics 44 20 UA library record; WoS full record; WoS citing articles pdf doi
Neyts, E.C.; van Duin, A.C.T.; Bogaerts, A. Changing chirality during single-walled carbon nanotube growth : a reactive molecular dynamics/Monte Carlo study 2011 Journal of the American Chemical Society 133 116 UA library record; WoS full record; WoS citing articles pdf doi
Wang, Y.; Yu, M.Y.; Chen, Z.Y. Coherent relativistic wake wave of a charged object moving steadily in a plasma 2011 Physica scripta 84 5 UA library record; WoS full record; WoS citing articles pdf doi
De Bie, C.; Verheyde, B.; Martens, T.; van Dijk, J.; Paulussen, S.; Bogaerts, A. Fluid modeling of the conversion of methane into higher hydrocarbons in an atmospheric pressure dielectric barrier discharge 2011 Plasma processes and polymers 8 70 UA library record; WoS full record; WoS citing articles pdf doi
Zhang, Y.-R.; Xu, X.; Bogaerts, A.; Wang, Y.-N. Fluid simulation of the phase-shift effect in hydrogen capacitively coupled plasmas: 1 : transient behaviour of electrodynamics and power deposition 2012 Journal of physics: D: applied physics 45 57 UA library record; WoS full record; WoS citing articles pdf doi
Zhang, Y.-R.; Xu, X.; Bogaerts, A.; Wang, Y.-N. Fluid simulation of the phase-shift effect in hydrogen capacitively coupled plasmas: 2 : radial uniformity of the plasma characteristics 2012 Journal of physics: D: applied physics 45 15 UA library record; WoS full record; WoS citing articles pdf doi
Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current 2011 Solid state electronics 65-66 2 UA library record; WoS full record; WoS citing articles pdf doi
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling 2011 Applied physics letters 99 1 UA library record; WoS full record; WoS citing articles doi
Lindner, H.; Murtazin, A.; Groh, S.; Niemax, K.; Bogaerts, A. Simulation and experimental studies on plasma temperature, flow velocity, and injector diameter effects for an inductively coupled plasma 2011 Analytical chemistry 83 34 UA library record; WoS full record; WoS citing articles pdf doi
Khalilov, U.; Neyts, E.C.; Pourtois, G.; van Duin, A.C.T. Can we control the thickness of ultrathin silica layers by hyperthermal silicon oxidation at room temperature? 2011 The journal of physical chemistry: C : nanomaterials and interfaces 115 36 UA library record; WoS full record; WoS citing articles doi
Duan, Z.L.; Chen, Z.Y.; Zhang, J.T.; Feng, X.L.; Xu, Z.Z. Scheme for the generation of entangled atomic state in cavity QED 2004 European physical journal : D : atomic, molecular and optical physics 30 4 UA library record; WoS full record; WoS citing articles doi
Xu, Y.; Jia, D.-J.; Chen, Z.; Gao, Y.; Li, F.-S. The mode-deviation effect of trapped spinor bose gas beyond mean field theory 2004 International journal of modern physics: B: condensed matter physics, statistical physics, applied physics 18 1 UA library record; WoS full record; WoS citing articles doi
Chen, Z.; Feng, X.; Xu, Y.; Yu, M.Y. Optical bistability and multistability in four-level systems 2003 Physica scripta 68 8 UA library record; WoS full record; WoS citing articles pdf doi
Armelao, L.; Bertagnolli, H.; Bleiner, D.; Groenewolt, M.; Gross, S.; Krishnan, V.; Sada, C.; Schubert, U.; Tondello, E.; Zattin, A. Highly dispersed mixed zirconia and hafnia nanoparticles in a silica matrix: First example of a ZrO2-HfO2-SiO2 ternary oxide system 2007 Advanced functional materials 34 UA library record; WoS full record; WoS citing articles doi
Bleiner, D.; Macri, M.; Gasser, P.; Sautter, V.; Maras, A. FIB, TEM and LA-ICPMS investigations on melt inclusions in Martian meteorites – Analytical capabilities and geochemical insights 2006 Talanta : the international journal of pure and applied analytical chemistry 9 UA library record; WoS full record; WoS citing articles pdf doi
Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts 2005 Microelectronic engineering 80 31 UA library record; WoS full record; WoS citing articles pdf doi
Chen, Z.; Yu, M.Y.; Luo, H. Molecular dynamics simulation of dust clusters in plasmas 2005 Physica scripta 71 13 UA library record; WoS full record; WoS citing articles doi
Kalitzova, M.; Vlakhov, E.; Marinov, Y.; Gesheva, K.; Ignatova, V.A.; Lebedev, O.; Muntele, C.; Gijbels, R. Effect of high-frequency electromagnetic field on Te+-implanted (001) Si</tex> 2004 Vacuum: the international journal and abstracting service for vacuum science and technology 76 2 UA library record; WoS full record; WoS citing articles pdf doi
Yuan, X.; Yu, W.; Yu, M.Y.; Chen, Z.Y.; Liu, J.R.; Lu, P.X.; Li, R.X.; Qian, L.J.; Lu, B.D. Long-distance channeling and focusing of lasers in plasmas 2002 Physica scripta 66 2 UA library record; WoS full record; WoS citing articles pdf doi
Martin, J.M.L.; Francois; Gijbels, R. The anharmonic-force field of thioformaldehyde, h2cs, by ab-initio methods 1994 Journal of molecular spectroscopy 168 18 UA library record; WoS full record; WoS citing articles doi
Delabie, A.; Sioncke, S.; Rip, J.; Van Elshocht, S.; Pourtois, G.; Mueller, M.; Beckhoff, B.; Pierloot, K. Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates 2012 Journal of vacuum science and technology: A: vacuum surfaces and films 30 41 UA library record; WoS full record; WoS citing articles doi
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.; Stesmans, A. Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 2012 Nano Research 5 407 UA library record; WoS full record; WoS citing articles pdf doi
Select All    Deselect All
List View
 |   | 
   print

Save Citations:
Export Records: