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  Author Title Year Publication Volume Times cited (down) Additional Links Links
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.; Stesmans, A. Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 2012 Nano Research 5 407 UA library record; WoS full record; WoS citing articles pdf doi
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Structural and vibrational properties of amorphous GeO2 from first-principles 2011 Applied physics letters 98 226 UA library record; WoS full record; WoS citing articles doi
Scalise, E.; Houssa, M.; Pourtois, G.; van den Broek, B.; Afanas'ev, V.; Stesmans, A. Vibrational properties of silicene and germanene 2013 Nano Research 6 105 UA library record; WoS full record; WoS citing articles doi
Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Electronic properties of two-dimensional hexagonal germanium 2010 Applied physics letters 96 86 UA library record; WoS full record; WoS citing articles doi
Clima, S.; Wouters, D.J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : a first principles insight 2014 Applied physics letters 104 79 UA library record; WoS full record; WoS citing articles doi
Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 2013 Physical chemistry, chemical physics 15 74 UA library record; WoS full record; WoS citing articles pdf doi
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. First-principles study of strained 2D MoS2 2014 Physica. E: Low-dimensional systems and nanostructures 56 72 UA library record; WoS full record; WoS citing articles doi
Sorée, B.; Magnus, W.; Pourtois, G. Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode 2008 Journal of computational electronics 7 70 UA library record; WoS full record; WoS citing articles doi
Houssa, M.; Scalise, E.; Sankaran, K.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Electronic properties of hydrogenated silicene and germanene 2011 Applied physics letters 98 63 UA library record; WoS full record; WoS citing articles doi
Clima, S.; Chen, Y.Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G. First-principles simulation of oxygen diffusion in HfOx : role in the resistive switching mechanism 2012 Applied physics letters 100 63 UA library record; WoS full record; WoS citing articles doi
van den Broek, B.; Houssa, M.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Two-dimensional hexagonal tin : ab initio geometry, stability, electronic structure and functionalization 2014 2D materials 1 58 UA library record; WoS full record; WoS citing articles pdf doi
Scalise, E.; Houssa, M.; Cinquanta, E.; Grazianetti, C.; van den Broek, B.; Pourtois, G.; Stesmans, A.; Fanciulli, M.; Molle, A. Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 2014 2D materials 1 49 UA library record; WoS full record; WoS citing articles pdf doi
Nourbakhsh, A.; Cantoro, M.; Klekachev, A.V.; Pourtois, G.; Vosch, T.; Hofkens, J.; van der Veen, M.H.; Heyns, M.M.; de Gendt, S.; Sels, B.F. Single layer vs bilayer graphene : a comparative study of the effects of oxygen plasma treatment on their electronic and optical properties 2011 The journal of physical chemistry: C : nanomaterials and interfaces 115 46 UA library record; WoS full record; WoS citing articles doi
Khalilov, U.; Pourtois, G.; van Duin, A.C.T.; Neyts, E.C. Self-limiting oxidation in small-diameter Si nanowires 2012 Chemistry of materials 24 45 UA library record; WoS full record; WoS citing articles doi
Dutta, S.; Sankaran, K.; Moors, K.; Pourtois, G.; Van Elshocht, S.; Bommels, J.; Vandervorst, W.; Tokei, Z.; Adelmann, C. Thickness dependence of the resistivity of platinum-group metal thin films 2017 Journal of applied physics 122 42 UA library record; WoS full record; WoS citing articles doi
Delabie, A.; Sioncke, S.; Rip, J.; Van Elshocht, S.; Pourtois, G.; Mueller, M.; Beckhoff, B.; Pierloot, K. Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates 2012 Journal of vacuum science and technology: A: vacuum surfaces and films 30 41 UA library record; WoS full record; WoS citing articles doi
Xu, X.; Vereecke, G.; Chen, C.; Pourtois, G.; Armini, S.; Verellen, N.; Tsai, W.K.; Kim, D.W.; Lee, E.; Lin, C.Y.; Van Dorpe, P.; Struyf, H.; Holsteyns, F.; Moshchalkov, V.; Indekeu, J.; De Gendt, S.; Capturing wetting states in nanopatterned silicon 2014 ACS nano 8 39 UA library record; WoS full record; WoS citing articles doi
Khalilov, U.; Neyts, E.C.; Pourtois, G.; van Duin, A.C.T. Can we control the thickness of ultrathin silica layers by hyperthermal silicon oxidation at room temperature? 2011 The journal of physical chemistry: C : nanomaterials and interfaces 115 36 UA library record; WoS full record; WoS citing articles doi
Scalise, E.; Cinquanta, E.; Houssa, M.; van den Broek, B.; Chiappe, D.; Grazianetti, C.; Pourtois, G.; Ealet, B.; Molle, A.; Fanciulli, M.; Afanas’ev, V.V.; Stesmans, A.; Vibrational properties of epitaxial silicene layers on (111) Ag 2014 Applied surface science 291 36 UA library record; WoS full record; WoS citing articles doi
Clima, S.; Chen, Y.Y.; Fantini, A.; Goux, L.; Degraeve, R.; Govoreanu, B.; Pourtois, G.; Jurczak, M. Intrinsic tailing of resistive states distributions in amorphous <tex>HfOx </tex> and TaOx based resistive random access memories 2015 IEEE electron device letters 36 33 UA library record; WoS full record; WoS citing articles doi
van den Broek, B.; Houssa, M.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. First-principles electronic functionalization of silicene and germanene by adatom chemisorption 2014 Applied surface science 291 32 UA library record; WoS full record; WoS citing articles doi
Khalilov, U.; Pourtois, G.; van Duin, A.C.T.; Neyts, E.C. Hyperthermal oxidation of Si(100)2x1 surfaces : effect of growth temperature 2012 The journal of physical chemistry: C : nanomaterials and interfaces 116 32 UA library record; WoS full record; WoS citing articles doi
Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts 2005 Microelectronic engineering 80 31 UA library record; WoS full record; WoS citing articles pdf doi
Mees, M.J.; Pourtois, G.; Neyts, E.C.; Thijsse, B.J.; Stesmans, A. Uniform-acceptance force-bias Monte Carlo method with time scale to study solid-state diffusion 2012 Physical review : B : condensed matter and materials physics 85 31 UA library record; WoS full record; WoS citing articles url doi
Chen, Y.Y.; Pourtois, G.; Adelmann, C.; Goux, L.; Govoreanu, B.; Degreave, R.; Jurczak, M.; Kittl, J.A.; Groeseneken, G.; Wouters, D.J. Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device 2012 Applied physics letters 100 29 UA library record; WoS full record; WoS citing articles doi
Neyts, E.C.; Khalilov, U.; Pourtois, G.; van Duin, A.C.T. Hyperthermal oxygen interacting with silicon surfaces : adsorption, implantation, and damage creation 2011 The journal of physical chemistry: C : nanomaterials and interfaces 115 28 UA library record; WoS full record; WoS citing articles doi
Clima, S.; Sankaran, K.; Chen, Y.Y.; Fantini, A.; Celano, U.; Belmonte, A.; Zhang, L.; Goux, L.; Govoreanu, B.; Degraeve, R.; Wouters, D.J.; Jurczak, M.; Vandervorst, W.; Gendt, S.D.; Pourtois, G.; RRAMs based on anionic and cationic switching : a short overview 2014 Physica status solidi: rapid research letters 8 28 UA library record; WoS full record; WoS citing articles doi
Khalilov, U.; Pourtois, G.; van Duin, A.C.T.; Neyts, E.C. On the c-Si\mid a-SiO2 interface in hyperthermal Si oxidation at room temperature 2012 The journal of physical chemistry: C : nanomaterials and interfaces 116 27 UA library record; WoS full record; WoS citing articles doi
Khalilov, U.; Pourtois, G.; Huygh, S.; van Duin, A.C.T.; Neyts, E.C.; Bogaerts, A. New mechanism for oxidation of native silicon oxide 2013 The journal of physical chemistry: C : nanomaterials and interfaces 117 24 UA library record; WoS full record; WoS citing articles pdf doi
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor : structure, tail states and strain effects 2015 Journal of physics: D: applied physics 48 23 UA library record; WoS full record; WoS citing articles pdf doi
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