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“CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions”. Robin I-C, Aichele T, Bougerol C, André, R, Tatarenko S, Bellet-Amalric E, van Daele B, Van Tendeloo G, Nanotechnology 18, 265701 (2007). http://doi.org/10.1088/0957-4484/18/26/265701
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.44
Times cited: 8
DOI: 10.1088/0957-4484/18/26/265701
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“Single crystalline GaN grown on porous Si(111) by MOVPE”. Cheng K, Degroote S, Leys M, van Daele B, Germain M, Van Tendeloo G, Borghs G, Physica status solidi: C: conferences and critical reviews 4, 1908 (2007). http://doi.org/10.1002/pssc.200674316
Abstract: In this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 mu m to 10 mu m, were investigated. The morphology of the GaN surfaces was analyzed by optical interference microscopy. The crystalline quality of the epitaxial layers was characterized by High Resolution X-Ray Diffraction (HR-XRD) and cross-sectional Transmission Electron Microscopy (TEM). A Full Width at Half Maximum (FWHM) of the X-ray symmetric rocking curve (0002) 2 theta – omega scan of 290 arc see was obtained for a 1 mu m thick GaN layer, which is comparable with that of GaN grown on bulk Si(111) substrates. (c) 2007 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1002/pssc.200674316
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“Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers”. Cheng K, Leys M, Degroote S, van Daele B, Boeykens S, Derluyn J, Germain M, Van Tendeloo G, Engelen J, Borghs G, Journal of electronic materials 35, 592 (2006). http://doi.org/10.1007/s11664-006-0105-1
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.579
Times cited: 102
DOI: 10.1007/s11664-006-0105-1
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“Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors”. Van Daele B, Van Tendeloo G, Derluyn J, Shrivastava P, Lorenz A, Leys MR, Germain M;, Applied physics letters 89, Artn 201908 (2006). http://doi.org/10.1063/1.2388889
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 15
DOI: 10.1063/1.2388889
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“Observations of intermetallic compound formation of hot dip aluminized steel”. Kee-Hyun K, van Daele B, Van Tendeloo G, Jong-Kyu Y, Aluminium alloys: part 1-2 519-521, 1871 (2006)
Abstract: A hot dip aluminizing process to simulate the continuous galvanizing line (CGL) was carried out in three successive steps by a hot dip simulator: the pre-treatment for removing scales on the 200 x 250 mm(2) and 1mm in thickness cold rolled steel sheet, the dipping in 660 degrees C Al-Si melt for 3s and the cooling. In a pre-treatment, the steel specimen was partly coated by Au to confirm the mechanism of intermetallic compound (IMC) formation. Scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), and transmission electron microscopy (TEM) analyses were followed to observe the cross-section and the distribution of the elements. The specimen was analyzed in the boundary of the dipped-undipped part to see the formation mechanism of the aluminized steel. An intermetallic compound (IMC) is rapidly developed and grown in the steel-liquid interface. It has been usually reported that the IMC was formed by the dissolution of iron in the steel substrate toward the melt and the diffusion of aluminum in an opposite direction. The specimen is covered with aluminum-10 wt.% silicon, forms the IMC in the part that was not Au coated. However, IMC is not formed in the Au-coated part. The interface of the dipped-undipped is also analyzed by EDX. At the interface of the steel-IMC, it is clearly shown that the IMC is only formed in the dipped part and exists in the steel substrate as well, and contributes by iron, aluminum and silicon. The result clearly shows that only aluminum diffuses into the steel substrate without the dissolution of iron and forms the IMC between the steel substrate and the melt. Au coating and the short dipping time prevent the iron from dissolving into the aluminum melt. By TEM combined with focused ion beam (FIB) sample preparation, the IMC is confirmed as Fe2SiAl8, a hexagonal structure with space group P6(3)/mmc.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN”. van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys M, Germain M, Applied physics letters 87, 061905 (2005). http://doi.org/10.1063/1.2008361
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 57
DOI: 10.1063/1.2008361
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“Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN”. van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys MR, Germain M, Springer proceedings in physics 107, 389 (2005)
Abstract: Transmission electron microscopy has been applied to study Ti and Al/Ti contacts on GaN and AlGaN/GaN as a function of annealing temperature. This has lead to a profound understanding of the role of Al, both in the contact formation on n-GaN and on AlGaN/GaN. Al in the AlGaN decreases the N-extraction by Ti out of the nitride, because of the strong Al-N bond. Al in the metal bilayer also reduces the N-extraction by Ti due to a preferential alloy mixing.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Formation of metallic In in InGaN/GaN multiquantum wells”. van Daele B, Van Tendeloo G, Jacobs K, Moerman I, Leys M, Applied physics letters 85, 4379 (2004). http://doi.org/10.1063/1.1815054
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 32
DOI: 10.1063/1.1815054
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“High precision determination of the elastic strain of InGaN/GaN multiple quantum wells”. Wu MF, Zhou S, Yao S, Zhao Q, Vantomme A, van Daele B, Piscopiello E, Van Tendeloo G, Tong YZ, Yang ZJ, Yu TJ, Zhang GY, Journal of vacuum science and technology: B: microelectronics and nanometer structures 22, 920 (2004). http://doi.org/10.1116/1.1715085
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1116/1.1715085
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“High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers”. Germain M, Leys M, Boeykens S, Degroote S, Wang W, Schreurs D, Ruythooren W, Choi K-H, van Daele B, Van Tendeloo G, Borghs G, Materials Research Society symposium proceedings 798, Y10.22 (2004)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Observation of cyclotron resonance in an InAs/GaAs wetting layer with shallowly formed quantum dots”. Janssen G, Goovaerts E, Bouwen A, Partoens B, van Daele B, Zurauskiene N, Koenraad PM, Wolter JH, Physical review : B : condensed matter and materials physics 68, 045329 (2003). http://doi.org/10.1103/PhysRevB.68.045329
Keywords: A1 Journal article; Nanostructured and organic optical and electronic materials (NANOrOPT); Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 10
DOI: 10.1103/PhysRevB.68.045329
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“Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures”. Jacobs K, van Daele B, Leys M, Moerman I, Van Tendeloo G, Journal of crystal growth 248, 498 (2003). http://doi.org/10.1016/S0022-0248(02)01847-X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 14
DOI: 10.1016/S0022-0248(02)01847-X
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“Relation between microstructure and 2DEG properties of AlGaN/GaN structures”. van Daele B, Van Tendeloo G, Germain M, Leys M, Bougrioua Z, Moerman I, Physica status solidi: B: basic research 234, 830 (2002). http://doi.org/10.1002/1521-3951(200212)234:3<830::AID-PSSB830>3.0.CO;2-O
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 1
DOI: 10.1002/1521-3951(200212)234:3<830::AID-PSSB830>3.0.CO;2-O
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