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Author (up) Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. doi  openurl
  Title Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation Type A1 Journal article
  Year 2014 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 115 Issue 4 Pages 044505-44508  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k.p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Gamma and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-holelike valence band is strongly coupling to the conduction band at the Gamma point even in the presence of strain based on the 30-band k.p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) mu A/mu m can be achieved along with on/off ratio > 10(6) for V-DD = 0.5V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge. (C) 2014 AIP Publishing LLC.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000331210800113 Publication Date 2014-01-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979;1089-7550; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 26 Open Access  
  Notes ; Authors would like to thank Dr. Mohammad Ali Pourghaderi for useful discussions on the nonparabolicity. Authors would also like to thank Professor Eddy Simoen and Dr. Yosuke Shimura for useful discussions about the validity of modeled bandgaps and effective masses. This work was also supported by IMEC's Industrial Affiliation Program. ; Approved Most recent IF: 2.068; 2014 IF: 2.183  
  Call Number UA @ lucian @ c:irua:115800 Serial 3505  
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Author (up) Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. doi  openurl
  Title Direct and indirect band-to-band tunneling in germanium-based TFETs Type A1 Journal article
  Year 2012 Publication IEEE transactions on electron devices Abbreviated Journal Ieee T Electron Dev  
  Volume 59 Issue 2 Pages 292-301  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Germanium is a widely used material for tunnel FETs because of its small band gap and compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is considered. However, direct band-to-band tunneling (BTBT) in Ge should be included in tunnel FET modeling and simulations since the energy difference between the Ge conduction band edges at the L and G valleys is only 0.14 eV at room temperature. In this paper, we theoretically calculate the parameters A and B of Kane's direct and indirect BTBT models at different tunneling directions ([100], [110], and [111]) for Si, Ge and unstrained Si1-xGex. We highlight how the direct BTBT component becomes more important as the Ge mole fraction increases. The calculation of the band-to-band generation rate in the uniform electric field limit reveals that direct tunneling always dominates over indirect tunneling in Ge. The impact of the direct transition in Ge on the performance of two realistic tunnel field-effect transistor configurations is illustrated with TCAD simulations. The influence of field-induced quantum confinement is included in the analysis based on a back-of-the-envelope calculation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000299430200005 Publication Date 2011-12-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9383;1557-9646; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.605 Times cited 212 Open Access  
  Notes ; Manuscript received August 5, 2011; revised October 5, 2011 and October 28, 2011; accepted October 30, 2011. Date of publication December 7, 2011; date of current version January 25, 2012. This work was supported by the Interuniversity Microelectronics Center's (IMEC) Industrial Affiliation Program. The work of W. G. Vandenberghe was supported by a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). The review of this paper was arranged by Editor A. Schenk. ; Approved Most recent IF: 2.605; 2012 IF: 2.062  
  Call Number UA @ lucian @ c:irua:97215 Serial 708  
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Author (up) Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. pdf  doi
openurl 
  Title Modeling the impact of junction angles in tunnel field-effect transistors Type A1 Journal article
  Year 2012 Publication Solid state electronics Abbreviated Journal Solid State Electron  
  Volume 69 Issue Pages 31-37  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We develop an analytical model for a tunnel field-effect transistor (TFET) with a tilted source junction angle. The tunnel current is derived by using circular tunnel paths along the electric field. The analytical model predicts that a smaller junction angle improves the TFET performance, which is supported by device simulations. An analysis is also made based on straight tunnel paths and tunnel paths corresponding to the trajectory of a classical particle. In all the aforementioned cases, the same conclusions are obtained. A TFET configuration with an encroaching polygon source junction is studied to analyze the junction angle dependence at the smallest junction angles. The improvement of the subthreshold swing (SS) with decreasing junction angle can be achieved by using thinner effective oxide thickness, smaller band gap material and longer encroaching length of the encroaching junction. A TFET with a smaller junction angle on the source side also has an innate immunity against the degradation of the fringing field from the gate electrode via a high-k spacer. A large junction angle on the drain side can suppress the unwanted ambipolar current of TFETs. (c) 2011 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000301561600009 Publication Date 2012-01-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.58 Times cited 9 Open Access  
  Notes ; We acknowledge the input on nanowire processing of Rita Rooyackers and useful discussions with Wim Magnus. William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was also supported by imec's Industrial Affiliation Program. ; Approved Most recent IF: 1.58; 2012 IF: 1.482  
  Call Number UA @ lucian @ c:irua:97816 Serial 2145  
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Author (up) Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. doi  openurl
  Title Optimization of gate-on-source-only tunnel FETs with counter-doped pockets Type A1 Journal article
  Year 2012 Publication IEEE transactions on electron devices Abbreviated Journal Ieee T Electron Dev  
  Volume 59 Issue 8 Pages 2070-2077  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We investigate a promising tunnel FET configuration having a gate on the source only, which is simultaneously exhibiting a steeper subthreshold slope and a higher ON-current than the lateral tunneling configuration with a gate on the channel. Our analysis is performed based on a recently developed 2-D quantum-mechanical simulator calculating band-to-band tunneling and including quantum confinement (QC). It is shown that the two disadvantages of the structure, namely, the sensitivity to gate alignment and the physical oxide thickness, are mitigated by placing a counter-doped parallel pocket underneath the gate-source overlap. The pocket also significantly reduces the field-induced QC. The findings are illustrated with all-Si and all-Ge gate-on-source-only tunnel field-effect transistor simulations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000306920200011 Publication Date 2012-06-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9383;1557-9646; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.605 Times cited 72 Open Access  
  Notes ; Manuscript received February 17, 2012; revised May 7, 2012; accepted May 11, 2012. Date of publication June 26, 2012; date of current version July 19, 2012. This work was supported by the Interuniversity Microelectronics Center's Industrial Affiliation Program. The work of W. G. Vandenberghe was supported by the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen) through a Ph.D. stipend. The review of this paper was arranged by Editor H. S. Momose. ; Approved Most recent IF: 2.605; 2012 IF: 2.062  
  Call Number UA @ lucian @ c:irua:100820 Serial 2487  
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Author (up) Kapra, A. openurl 
  Title Controlling the flux dynamics in superconductors by nanostructured magnetic arrays Type Doctoral thesis
  Year 2013 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords Doctoral thesis; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Antwerpen Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:114596 Serial 508  
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Author (up) Kapra, A.V.; Misko, V.R.; Peeters, F.M. pdf  doi
openurl 
  Title Controlling magnetic flux motion by arrays of zigzag-arranged magnetic bars Type A1 Journal article
  Year 2013 Publication Superconductor science and technology Abbreviated Journal Supercond Sci Tech  
  Volume 26 Issue 2 Pages 025011-10  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Recent advances in manufacturing arrays of artificial pinning sites, i.e., antidots, blind holes and magnetic dots, allowed an effective control of magnetic flux in superconductors. An array of magnetic bars deposited on top of a superconducting film was shown to display different pinning regimes depending on the direction of the in-plane magnetization of the bars. Changing the sign of their magnetization results in changes in the induced magnetic pinning potentials. By numerically solving the time-dependent Ginzburg-Landau equations in a superconducting film with periodic arrays of zigzag-arranged magnetic bars, we revealed various flux dynamics regimes. In particular, we demonstrate flux pinning and flux flow, depending on the direction of the magnetization of the magnetic bars. Remarkably, the revealed different flux-motion regimes are associated with different mechanisms of vortex-antivortex dynamics. For example, we found that for an 'antiparallel' configuration of magnetic bars this dynamics involves a repeating vortex-antivortex generation and annihilation. We show that the depinning transition and the onset of flux flow can be manipulated by the magnetization of the bars and the geometry of the array. This provides an effective control of the depinning critical current that can be useful for possible fluxonics applications.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000313559300011 Publication Date 2012-12-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048;1361-6668; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.878 Times cited 5 Open Access  
  Notes ; We acknowledge useful discussions with Denis Vodolazov and Alejandro Silhanek. This work was supported by the 'Odysseus' Program of the Flemish Government and the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 2.878; 2013 IF: 2.796  
  Call Number UA @ lucian @ c:irua:110080 Serial 505  
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Author (up) Kapra, A.V.; Misko, V.R.; Vodolazov, D.Y.; Peeters, F.M. pdf  doi
openurl 
  Title The guidance of vortex-antivortex pairs by in-plane magnetic dipoles in a superconducting finite-size film Type A1 Journal article
  Year 2011 Publication Superconductor science and technology Abbreviated Journal Supercond Sci Tech  
  Volume 24 Issue 2 Pages 024014-024014,8  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The possibility of manipulating vortex matter by using various artificial pinning arrays is of significant importance for possible applications in nano and micro fluxonics devices. By numerically solving the time-dependent GinzburgLandau equations, we study the vortexantivortex (vav) dynamics in a hybrid structure consisting of a finite-size superconductor with magnetic dipoles on top which generate vav pairs in the presence of an external current. The vav dynamics is analyzed for different arrangements and magnetic moments of the dipoles, as a function of angle α between the direction of the magnetic dipole and that of the Lorentz force produced by the applied current. The interplay of the attractive interaction between a vav pair and the Lorentz force leads either to the separation of (anti)vortices and their motion in opposite directions or to their annihilation. We found a critical angle αc, below which vortices and antivortices are repelled, while for larger angles they annihilate. In case of a single (few) magnetic dipole(s), this magnetic dipole induced vav guidance is influenced by the self-interaction of the vav pairs with their images in a finite-size sample, while for a periodic array of dipoles the guidance is determined by the interaction of a vav pair with other dipoles and vav pairs created by them. This effect is tunable through the external current and the magnetization and size of the magnetic dipoles.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000286379900015 Publication Date 2011-01-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048;1361-6668; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.878 Times cited 28 Open Access  
  Notes ; This work was supported by the 'Odysseus' program of the Flemish Government and the Flemish Science Foundation (FWO-Vl), the Interuniversity Attraction Poles (IAP) Programme-Belgian State-Belgian Science Policy, and the FWO-Vl. DYV acknowledges support from the Russian Fund for Basic Research and Russian Agency of Education under the Federal Programme 'Scientific and educational personnel of innovative Russia in 2009-2013'. ; Approved Most recent IF: 2.878; 2011 IF: 2.662  
  Call Number UA @ lucian @ c:irua:88732 Serial 1399  
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Author (up) Kapra, A.V.; Vodolazov, D.Y.; Misko, V.R. url  doi
openurl 
  Title Vortex transport in a channel with periodic constrictions Type A1 Journal article
  Year 2013 Publication Superconductor science and technology Abbreviated Journal Supercond Sci Tech  
  Volume 26 Issue 9 Pages 095010-95011  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract By numerically solving the time-dependent Ginzburg-Landau equations in a type-II superconductor, characterized by a critical temperature T-c1, and the coherence length xi(1), with a channel formed by overlapping rhombuses (diamond-like channel) made of another type-II superconductor, characterized, in general, by different T-c2 and xi(2), we investigate the dynamics of driven vortex matter for varying parameters of the channel: the width of the neck connecting the diamond cells, the cell geometry, and the ratio between the coherence lengths in the bank and the channel. We analyzed samples with periodic boundary conditions (which we call 'infinite' samples) and finite-size samples (with boundaries for vortex entry/exit), and we found that by tuning the channel parameters, one can manipulate the vortex dynamics, e.g., change the transition from flux-pinned to flux-flow regime and tune the slope of the IV-curves. In addition, we analyzed the effect of interstitial vortices on these characteristics. The critical current of this device was studied as a function of the applied magnetic field, j(c)(H). The function j(c)(H) reveals a striking commensurability peak, in agreement with recent experimental observations. The obtained results suggest that the diamond channel, which combines the properties of pinning arrays and flux-guiding channels, can be a promising candidate for potential use in devices controlling magnetic flux motion.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000323073800016 Publication Date 2013-07-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048;1361-6668; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.878 Times cited 2 Open Access  
  Notes ; This work was supported by the 'Odysseus' Program of the Flemish Government and the Flemish Science Foundation (FWO-Vl). ; Approved Most recent IF: 2.878; 2013 IF: 2.796  
  Call Number UA @ lucian @ c:irua:110737 Serial 3898  
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Author (up) Karaaslan, Y.; Haskins, J.B.; Yapicioglu, H.; Sevik, C. doi  openurl
  Title Influence of randomly distributed vacancy defects on thermal transport in two-dimensional group-III nitrides Type A1 Journal article
  Year 2021 Publication Journal Of Applied Physics Abbreviated Journal J Appl Phys  
  Volume 129 Issue 22 Pages 224304  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Efficient thermal transport control is a fundamental issue for electronic device applications such as information, communication, and energy storage technologies in modern electronics in order to achieve desired thermal conditions. Structural defects in materials provide a mechanism to adjust the thermal transport properties of these materials on demand. In this context, the effect of structural defects on lattice thermal conductivities of two-dimensional hexagonal binary group-III nitride (XN, X = B, Al, and Ga) semiconductors is systematically investigated by means of classical molecular dynamics simulations performed with recently developed transferable inter-atomic potentials accurately describing defect energies. Here, two different Green-Kubo based approaches and another approach based on non-equilibrium molecular dynamics are compared in order to get an overall understanding. Our investigation clearly shows that defect concentrations of 3% decrease the thermal conductivity of systems containing these nitrites up to 95%. Results hint that structural defects can be used as effective adjustment parameters in controlling thermal transport properties in device applications associated with these materials. Published under an exclusive license by AIP Publishing.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000692024300001 Publication Date 2021-06-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; 1089-7550 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited Open Access Not_Open_Access  
  Notes Approved Most recent IF: 2.068  
  Call Number UA @ admin @ c:irua:181618 Serial 8096  
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Author (up) Karaaslan, Y.; Yapicioglu, H.; Sevik, C. doi  openurl
  Title Assessment of Thermal Transport Properties of Group-III Nitrides: A Classical Molecular Dynamics Study with Transferable Tersoff-Type Interatomic Potentials Type A1 Journal article
  Year 2020 Publication Physical Review Applied Abbreviated Journal Phys Rev Appl  
  Volume 13 Issue 3 Pages 034027  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract In this study, by means of classical molecular dynamics simulations, we investigate the thermal-transport properties of hexagonal single-layer, zinc-blend, and wurtzite phases of BN, AlN, and GaN crystals, which are very promising for the application and design of high-quality electronic devices. With this in mind, we generate fully transferable Tersoff-type empirical interatomic potential parameter sets by utilizing an optimization procedure based on particle-swarm optimization. The predicted thermal properties as well as the structural, mechanical, and vibrational properties of all materials are in very good agreement with existing experimental and first-principles data. The impact of isotopes on thermal transport is also investigated and between approximately 10 and 50% reduction in phonon thermal transport with random isotope distribution is observed in BN and GaN crystals. Our investigation distinctly shows that the generated parameter sets are fully transferable and very useful in exploring the thermal properties of systems containing these nitrides.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000518820200003 Publication Date 2020-03-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2331-7019 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.6 Times cited Open Access  
  Notes Approved Most recent IF: 4.6; 2020 IF: 4.808  
  Call Number UA @ admin @ c:irua:193766 Serial 7508  
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Author (up) Karapetrov, G.; Belkin, A.; Iavarone, M.; Fedor, J.; Novosad, V.; Milošević, M.V.; Peeters, F.M. doi  openurl
  Title Anisotropic superconductivity and vortex dynamics in magnetically coupled F/S and F/S/F hybrids Type A1 Journal article
  Year 2011 Publication Journal of superconductivity and novel magnetism Abbreviated Journal J Supercond Nov Magn  
  Volume 24 Issue 1/2 Pages 905-910  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Magnetically coupled superconductorferromagnet hybrids offer advanced routes for nanoscale control of superconductivity. Magnetotransport characteristics and scanning tunneling microscopy images of vortex structures in superconductorferromagnet hybrids reveal rich superconducting phase diagrams. Focusing on a particular combination of a ferromagnet with a well-ordered periodic magnetic domain structure with alternating out-of-plane component of magnetization, and a small coherence length superconductor, we find directed nucleation of superconductivity above the domain wall boundaries. We show that near the superconductor-normal state phase boundary the superconductivity is localized in narrow mesoscopic channels. In order to explore the Abrikosov flux line ordering in F/S hybrids, we use a combination of scanning tunneling microscopy and GinzburgLandau simulations. The magnetic stripe domain structure induces periodic local magnetic induction in the superconductor, creating a series of pinninganti-pinning channels for externally added magnetic flux quanta. Such laterally confined Abrikosov vortices form quasi-1D arrays (chains). The transitions between multichain states occur through propagation of kinks at the intermediate fields. At high fields we show that the system becomes nonlinear due to a change in both the number of vortices and the confining potential. In F/S/F hybrids we demonstrate the evolution of the anisotropic conductivity in the superconductor that is magnetically coupled with two adjacent ferromagnetic layers. Stripe magnetic domain structures in both F-layers are aligned under each other, resulting in a directional superconducting order parameter in the superconducting layer. The conductance anisotropy strongly depends on the period of the magnetic domains and the strength of the local magnetization. The anisotropic conductivity of up to three orders of magnitude can be achieved with a spatial critical temperature modulation of 5% of T c. Induced anisotropic properties in the F/S and F/S/F hybrids have a potential for future application in switching and nonvolatile memory elements operating at low temperatures.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000289855700150 Publication Date 2010-10-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1557-1939;1557-1947; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.18 Times cited 2 Open Access  
  Notes ; This work as well as the use of the Center for Nanoscale Materials and the Electron Microscopy Center at Argonne National Laboratory were supported by UChicago Argonne, LLC, Operator of Argonne National Laboratory (“Argonne”). Argonne, a U.S. Department of Energy Office of Science laboratory, is operated under Contract No. DE-AC02-06CH11357. This work was also supported by the Ministry of Education, Agency for Structural Funds of the European Union, Research and Development Program, under agreement 262 401 200 19. M.V.M. and F. M. P. acknowledge support from the Flemish Science Foundation (FWO-VI), the Belgian Science Policy, the JSPS/ESF-NES program, the ESF-AQDJJ network, and the Vlaanderen-USA bilateral program. ; Approved Most recent IF: 1.18; 2011 IF: 0.650  
  Call Number UA @ lucian @ c:irua:89930 Serial 130  
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Author (up) Karapetrov, G.; Milošević, M.V.; Iavarone, M.; Fedor, J.; Belkin, A.; Novosad, V.; Peeters, F.M. url  doi
openurl 
  Title Transverse instabilities of multiple vortex chains in magnetically coupled NbSe2/permalloy superconductor/ferromagnet bilayers Type A1 Journal article
  Year 2009 Publication Physical review : B : solid state Abbreviated Journal Phys Rev B  
  Volume 80 Issue 18 Pages 180506,1-180506,4  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Using scanning tunneling microscopy and Ginzburg-Landau simulations, we explore vortex configurations in magnetically coupled NbSe2/permalloy superconductor/ferromagnet bilayer. The permalloy film with stripe domain structure induces periodic local magnetic induction in the superconductor, creating a series of pinning-antipinning channels for externally added magnetic flux quanta. Such laterally confined Abrikosov vortices form quasi-one-dimensional arrays (chains). The transitions between multichain states occur through propagation of kinks at the intermediate fields. At high fields we show that the system becomes nonlinear due to a change in both the number of vortices and the confining potential. The longitudinal instabilities of the resulting vortex structures lead to vortices levitating in the antipinning channels.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000272310900031 Publication Date 2009-11-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 38 Open Access  
  Notes Approved Most recent IF: 3.836; 2009 IF: 3.475  
  Call Number UA @ lucian @ c:irua:80314 Serial 3729  
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Author (up) Karavolas, V.C.; Triberis, G.P.; Peeters, F.M. doi  openurl
  Title Electrical and thermal transport of composite fermions Type A1 Journal article
  Year 1997 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 56 Issue Pages 15289-15298  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000071043700067 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 11 Open Access  
  Notes Approved Most recent IF: 3.836; 1997 IF: NA  
  Call Number UA @ lucian @ c:irua:19272 Serial 891  
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Author (up) Karczewski, G.; Wojtowicz, T.; Wang, Y.-J.; Wu, X.; Peeters, F.M. pdf  doi
openurl 
  Title Electron effective mass and resonant polaron effect in CdTe/CdMgTe quantum wells Type A1 Journal article
  Year 2002 Publication Physica status solidi: B: basic research T2 – 10th International Conference on II-VI Compounds, SEP 09-14, 2001, BREMEN, GERMANY Abbreviated Journal Phys Status Solidi B  
  Volume 229 Issue 1 Pages 597-600  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Cyclotron resonance in CdTe/CdMgTe quantum wells (QWs) was studied. Due to the polaron effect the zero-field effective mass is strongly influenced by the QW width. The experimental data have been described theoretically by taking into account electron-phonon coupling and the nonparabolicity of the conduction band. The subband structure was calculated self-consistently. The best fit was obtained for an electron-phonon coupling constant alpha = 0.3 and bare electron mass of m(b) = 0.092m(0).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000173806600118 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 10 Open Access  
  Notes Approved Most recent IF: 1.674; 2002 IF: 0.930  
  Call Number UA @ lucian @ c:irua:102838 Serial 925  
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Author (up) Kastalsky, A.; Peeters, F.M.; Chan, W.K.; Florez, L.T.; Harbison, J.P. openurl 
  Title Nonlinear transport phenomena in a triangular quantum well Type A1 Journal article
  Year 1991 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 59 Issue Pages 1708-1710  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos A1991GH40900019 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 11 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:945 Serial 2360  
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Author (up) Kastalsky, A.; Peeters, F.M.; Chan, W.K.; Florez, L.T.; Harbison, J.P. doi  openurl
  Title Novel nonlinear transport phenomena in a triangular quantum well Type A1 Journal article
  Year 1992 Publication Semiconductor science and technology: B Abbreviated Journal Semicond Sci Tech  
  Volume 7 Issue Pages 530-532  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos A1992HL26200140 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242;1361-6641; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.19 Times cited 4 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:3027 Serial 2380  
Permanent link to this record
 

 
Author (up) Kato, H.; Peeters, F.M. openurl 
  Title Correlation between a remote electron and a two-dimensional electron gas in resonant tunneling devices Type P3 Proceeding
  Year 2001 Publication Abbreviated Journal  
  Volume Issue Pages 843-844  
  Keywords P3 Proceeding; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Springer Place of Publication Berlin Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:37298 Serial 521  
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Author (up) Kato, H.; Peeters, F.M. doi  openurl
  Title Remote Wigner polaron in a magnetic field Type A1 Journal article
  Year 1999 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 59 Issue Pages 14342-14348  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000080780700027 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 3 Open Access  
  Notes Approved Most recent IF: 3.836; 1999 IF: NA  
  Call Number UA @ lucian @ c:irua:24155 Serial 2871  
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Author (up) Kato, H.; Peeters, F.M.; Ulloa, S.E. doi  openurl
  Title The remote plasmon polaron Type A1 Journal article
  Year 1999 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett  
  Volume 45 Issue Pages 235-241  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Paris Editor  
  Language Wos 000078026400015 Publication Date 2003-12-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.957 Times cited 6 Open Access  
  Notes Approved Most recent IF: 1.957; 1999 IF: 2.214  
  Call Number UA @ lucian @ c:irua:24173 Serial 2870  
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Author (up) Kato, H.; Peeters, F.M.; Ulloa, S.E. openurl 
  Title The remote Wigner polaron in a two-dimensional electron system Type A1 Journal article
  Year 1997 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett  
  Volume 40 Issue Pages 551-556  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Paris Editor  
  Language Wos A1997YK05500013 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0295-5075 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.957 Times cited 5 Open Access  
  Notes Approved Most recent IF: 1.957; 1997 IF: 2.350  
  Call Number UA @ lucian @ c:irua:19266 Serial 2872  
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Author (up) Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. doi  openurl
  Title Temperature-dependent modeling and characterization of through-silicon via capacitance Type A1 Journal article
  Year 2011 Publication IEEE electron device letters Abbreviated Journal Ieee Electr Device L  
  Volume 32 Issue 4 Pages 563-565  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract A semianalytical model of the through-silicon via (TSV) capacitance for elevated operating temperatures is derived and verified with electrical measurements. The effect of temperature on the increase in TSV capacitance over different technology parameters is explored, and it is shown that higher oxide thickness reduces the impact of temperature rise on TSV capacitance, while with low doped substrates, which are instrumental for reducing the TSV capacitance, the sensitivity of TSV capacitance to temperature is large and cannot be ignored.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000288664800045 Publication Date 2011-03-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0741-3106;1558-0563; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.048 Times cited 27 Open Access  
  Notes ; ; Approved Most recent IF: 3.048; 2011 IF: 2.849  
  Call Number UA @ lucian @ c:irua:89402 Serial 3498  
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Author (up) Kenawy, A.; Magnus, W.; Milošević, M.V.; Sorée, B. pdf  doi
openurl 
  Title Electronically tunable quantum phase slips in voltage-biased superconducting rings as a base for phase-slip flux qubits Type A1 Journal article
  Year 2020 Publication Superconductor Science & Technology Abbreviated Journal Supercond Sci Tech  
  Volume 33 Issue 12 Pages 125002  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Quantum phase slips represent a coherent mechanism to couple flux states of a superconducting loop. Since their first direct observation, there have been substantial developments in building charge-insensitive quantum phase-slip circuits. At the heart of these devices is a weak link, often a nanowire, interrupting a superconducting loop. Owing to the very small cross-sectional area of such a nanowire, quantum phase slip rates in the gigahertz range can be achieved. Instead, here we present the use of a bias voltage across a superconducting loop to electrostatically induce a weak link, thereby amplifying the rate of quantum phase slips without physically interrupting the loop. Our simulations reveal that the bias voltage modulates the free energy barrier between subsequent flux states in a very controllable fashion, providing a route towards a phase-slip flux qubit with a broadly tunable transition frequency.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000577207000001 Publication Date 2020-09-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.6 Times cited 4 Open Access  
  Notes ; ; Approved Most recent IF: 3.6; 2020 IF: 2.878  
  Call Number UA @ admin @ c:irua:172643 Serial 6503  
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Author (up) Kenawy, A.; Magnus, W.; Milošević, M.V.; Sorée, B. doi  openurl
  Title Voltage-controlled superconducting magnetic memory Type A1 Journal article
  Year 2019 Publication AIP advances T2 – 64th Annual Conference on Magnetism and Magnetic Materials (MMM), NOV 04-08, 2019, Las Vegas, NV Abbreviated Journal  
  Volume 9 Issue 12 Pages 125223  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract Over the past few decades, superconducting circuits have been used to realize various novel electronic devices such as quantum bits, SQUIDs, parametric amplifiers, etc. One domain, however, where superconducting circuits fall short is information storage. Superconducting memories are based on the quantization of magnetic flux in superconducting loops. Standard implementations store information as magnetic flux quanta in a superconducting loop interrupted by two Josephson junctions (i.e., a SQUID). However, due to the large inductance required, the size of the SQUID loop cannot be scaled below several micrometers, resulting in low-density memory chips. Here, we propose a scalable memory consisting of a voltage-biased superconducting ring threaded by a half-quantum flux bias. By numerically solving the time-dependent Ginzburg-Landau equations, we show that applying a time-dependent bias voltage in the microwave range constitutes a writing mechanism to change the number of stored flux quanta within the ring. Since the proposed device does not require a large loop inductance, it can be scaled down, enabling a high-density memory technology. (C) 2019 Author(s).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000515525300002 Publication Date 2019-12-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2158-3226 ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ admin @ c:irua:167551 Serial 8740  
Permanent link to this record
 

 
Author (up) Kenawy, A.; Magnus, W.; Sorée, B. doi  openurl
  Title Flux quantization and Aharonov-Bohm effect in superconducting rings Type A1 Journal article
  Year 2018 Publication Journal of superconductivity and novel magnetism Abbreviated Journal J Supercond Nov Magn  
  Volume 31 Issue 5 Pages 1351-1357  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Superconductivity is a macroscopic coherent state exhibiting various quantum phenomena such as magnetic flux quantization. When a superconducting ring is placed in a magnetic field, a current flows to expel the field from the ring and to ensure that the enclosed flux is an integer multiple of h/(2|e|). Although the quantization of magnetic flux in ring structures is extensively studied in literature, the applied magnetic field is typically assumed to be homogeneous, implicitly implying an interplay between field expulsion and flux quantization. Here, we propose to decouple these two effects by employing an Aharonov-Bohm-like structure where the superconducting ring is threaded by a magnetic core (to which the applied field is confined). Although the magnetic field vanishes inside the ring, the formation of vortices takes place, corresponding to a change in the flux state of the ring. The time evolution of the density of superconducting electrons is studied using the time-dependent Ginzburg-Landau equations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000429354100010 Publication Date 2017-10-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1557-1939 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.18 Times cited Open Access  
  Notes ; ; Approved Most recent IF: 1.18  
  Call Number UA @ lucian @ c:irua:150742UA @ admin @ c:irua:150742 Serial 4969  
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Author (up) Kerner, C.; Hackens, B.; Golubović, D.S.; Poli, S.; Faniel, S.; Magnus, W.; Schoenmaker, W.; Bayot, V.; Maes, H. doi  openurl
  Title Control and readout of current-induced magnetic flux quantization in a superconducting transformer Type A1 Journal article
  Year 2009 Publication Superconductor science and technology Abbreviated Journal Supercond Sci Tech  
  Volume 22 Issue 2 Pages 025001,1-025001,4  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We demonstrate a simple and robust method for inducing and detecting changes of magnetic flux quantization in the absence of an externally applied magnetic field. In our device, an isolated ring is interconnected with two access loops via permalloy cores, forming a superconducting transformer. By applying and tuning a direct current at the first access loop, the number of flux quanta trapped in the isolated ring is modified without the aid of an external field. The flux state of the isolated ring is simply detected by recording the evolution of the critical current of the second access loop.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos 000262786000003 Publication Date 2008-12-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048;1361-6668; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.878 Times cited 2 Open Access  
  Notes Approved Most recent IF: 2.878; 2009 IF: 2.694  
  Call Number UA @ lucian @ c:irua:76001 Serial 497  
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Author (up) Khalil-Allafi, J.; Amin-Ahmadi, B. pdf  doi
openurl 
  Title The effect of chemical composition on enthalpy and entropy changes of martensitic transformations in binary NiTi shape memory alloys Type P3 Proceeding
  Year 2009 Publication Journal Of Alloys And Compounds Abbreviated Journal J Alloy Compd  
  Volume 487 Issue Pages 363-366  
  Keywords P3 Proceeding; Condensed Matter Theory (CMT)  
  Abstract In the present research work the binary NiTi alloys with various compositions in the range of 50.351 at.% Ni were used. Samples have been annealed at 850 °C for 15 min and then quenched in water. In order to characterize transformation temperatures and enthalpy changes of the forward and the reverse martensitic transformation, Differential Scanning Calorimetric (DSC) experiments were performed. The enthalpy and entropy changes as a function of Ni atomic content have been thermodynamically investigated. Results show that enthalpy and entropy changes of martensitic transformation decrease when Ni atomic content increases. The variation of enthalpy and entropy of martensitic transformation with Ni content in binary NiTi alloys were explained by thermodynamic parameters and electron concentration of alloy (e/a) respectively.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000272521900073 Publication Date 2009-07-31  
  Series Editor Series Title Abbreviated Series Title Proceedings of the 22nd International Conference on the Physics of Semiconductors  
  Series Volume Series Issue Edition  
  ISSN 0925-8388; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.133 Times cited 30 Open Access  
  Notes Approved Most recent IF: 3.133; 2009 IF: 2.135  
  Call Number UA @ lucian @ c:irua:122040 Serial 804  
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Author (up) Khalilov, U.; Yusupov, M.; Eshonqulov, Gb.; Neyts, Ec.; Berdiyorov, Gr. pdf  url
doi  openurl
  Title Atomic level mechanisms of graphene healing by methane-based plasma radicals Type A1 Journal Article
  Year 2023 Publication FlatChem Abbreviated Journal FlatChem  
  Volume 39 Issue Pages 100506  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000990342500001 Publication Date 2023-04-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2452-2627 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 6.2 Times cited Open Access OpenAccess  
  Notes U.K., M.Y. and G.B.E. acknowledge the support of the Agency for Innovative Development of the Republic of Uzbekistan (Grant numbers F-FA-2021-512 and FZ-2020092435). The computational resources and services used in this work were partially provided by the HPC core facility CalcUA of the Universiteit Antwerpen and VSC (Flemish Supercomputer Center), funded by the FWO and the Flemish Government. Approved Most recent IF: 6.2; 2023 IF: NA  
  Call Number PLASMANT @ plasmant @c:irua:197442 Serial 8813  
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Author (up) Khaydarov, R.T.; Beisinbaeva, H.B.; Sabitov, M.M.; Kalal, M.; Berdiyorov, G.R. doi  openurl
  Title Conditions defining the mechanisms of the formation of light gas ions in multicomponent laser-produced plasmas Type A1 Journal article
  Year 2010 Publication Nuclear fusion Abbreviated Journal Nucl Fusion  
  Volume 50 Issue 10 Pages 105007,1-105007,4  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Using the mass-spectrometric method we study the charge, energy and spatial characteristics of ions in multicomponent plasma, generated under the action of Nd : YAG laser radiation on the surface of solid targets. We focus on the effect of the entry form of light gas atoms on the parameters of ions in such laser-produced plasmas. We found that the presence of light gas atoms considerably affects the parameters (e.g. the intensity and the charge multiplicity) of the heavier ions.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Vienna Editor  
  Language Wos 000281859300008 Publication Date 2010-08-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0029-5515;1741-4326; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.307 Times cited 1 Open Access  
  Notes ; ; Approved Most recent IF: 3.307; 2010 IF: 3.303  
  Call Number UA @ lucian @ c:irua:84876 Serial 476  
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Author (up) Khaydarov, R.T.; Beisinbaeva, H.B.; Sabitov, M.M.; Kalal, M.; Berdiyorov, G.R. pdf  doi
openurl 
  Title Effect of light gas atom inclusions on the characteristics of laser-produced plasma ions Type A1 Journal article
  Year 2011 Publication Nuclear fusion Abbreviated Journal Nucl Fusion  
  Volume 51 Issue 10 Pages 103041,1-103041,3  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Using the mass-spectrometric method we studied the effect of light gas inclusions on the formation process of multi-component laser-induced plasma ions. Masscharge characteristics, as well as energy and spatial distribution of the plasma ions are analysed. We found that both the energy and maximal charge of heavy component ions decrease due to the presence of gas atoms in the solid target surface layer.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Vienna Editor  
  Language Wos 000296603800043 Publication Date 2011-09-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0029-5515;1741-4326; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.307 Times cited 1 Open Access  
  Notes ; ; Approved Most recent IF: 3.307; 2011 IF: 4.090  
  Call Number UA @ lucian @ c:irua:93761 Serial 821  
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Author (up) Khaydarov, R.T.; Beisinbaeva, H.B.; Sabitov, N.M.; Terentev, V.B.; Berdiyorov, G.R. doi  openurl
  Title Effect of neutron irradiation on the characteristics of laser-produced plasma Type A1 Journal article
  Year 2010 Publication Nuclear fusion Abbreviated Journal Nucl Fusion  
  Volume 50 Issue 2 Pages 025024,1-025024,5  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Using the mass-spectrometric method we studied the formation of multi-charged plasma ions during the interaction of laser radiation with solid targets irradiated by neutron beams. We found that structural defects, caused by the neutron irradiation, influence not only the efficiency of the process of material evaporation and emission of plasma, but also the ionization and recombination processes taking place at the initial stage of plasma formation and expansion. We also show the effect of the dose of neutron irradiation on the threshold of plasma formation from the surface of the target.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Vienna Editor  
  Language Wos 000275322200029 Publication Date 2010-01-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0029-5515;1741-4326; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.307 Times cited 3 Open Access  
  Notes ; This work was supported by MINVIZ Uzbekistan and by IAEA (No 13738). G. R. B acknowledges support from FWO-Vlaanderen. ; Approved Most recent IF: 3.307; 2010 IF: 3.303  
  Call Number UA @ lucian @ c:irua:81769 Serial 825  
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