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Author Muto, S.; Merk, N.; Schryvers, D.; Tanner, L.E. pdf  doi
openurl 
  Title Displacive-replacive phase transformation in a Ni62.5Al37.5 phase studies by HREM and microdiffraction Type A1 Journal article
  Year 1993 Publication (up) Philosophical magazine: B: physics of condensed matter: electronic, optical and magnetic properties Abbreviated Journal  
  Volume 67 Issue 5 Pages 673-689  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The structure of the metastable Ni2Al phase, which has long been a matter of controversy, has been carefully re-examined by means of high-resolution transmission electron microscopy (HREM) and electron microdiffraction. First, it is concluded that theas-quenched NixAl100-x(60 less-than-or-equal-to x less-than-or-equal-to 65) material already exhibits a partial omega-type collapse in a one-dimensional fashion which and is consistent with the anomalous dip in the phonon dispersion curve. Ni2Al precipitates are formed on annealing by thermal decomposition of the high-temperature NixAl100-xB2 phase and still retain the small omega-type shuffle. The amount of displacement in the well developed Ni2Al phase was estimated to be between 20 and 50% of the ideal omega collapse; this was determined by means of a combined technique of HREM and microdiffraction together with dynamical calculations of HREM images and diffraction intensities.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1993LF72000005 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1364-2812;1463-6417; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 16 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:6776 Serial 740  
Permanent link to this record
 

 
Author Van Aert, S.; van Dyck, D. pdf  doi
openurl 
  Title Do smaller probes in a scanning transmission electron microscope result in more precise measurement of the distances between atom columns? Type A1 Journal article
  Year 2001 Publication (up) Philosophical magazine: B: physics of condensed matter: electronic, optical and magnetic properties Abbreviated Journal  
  Volume 81 Issue 11 Pages 1833-1846  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000172199700016 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1364-2812;1463-6417; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 11 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:47519 Serial 744  
Permanent link to this record
 

 
Author Muto, S.; Van Tendeloo, G.; Amelinckx, S. pdf  doi
openurl 
  Title High-resolution electron microscopy of structural defects in crystalline C60 and C70 Type A1 Journal article
  Year 1993 Publication (up) Philosophical magazine: B: physics of condensed matter: electronic, optical and magnetic properties Abbreviated Journal  
  Volume 67 Issue 4 Pages 443-463  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1993LA91100001 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1364-2812;1463-6417; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 31 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:6827 Serial 1454  
Permanent link to this record
 

 
Author Kiflawi, I.; Bruley, J.; Luyten, W.; Van Tendeloo, G. pdf  doi
openurl 
  Title 'Natural' and 'man-made' platelets in type-la diamonds Type A1 Journal article
  Year 1998 Publication (up) Philosophical magazine: B: physics of condensed matter: electronic, optical and magnetic properties Abbreviated Journal  
  Volume 78 Issue 3 Pages 299-314  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract 'Natural' platelets are planar defects in {001} planes found in natural type-IaA/B diamonds. 'Man-made' platelets are platelets formed in the laboratory by annealing type-IaA diamonds at temperatures over 2500 degrees C. Careful study shows that the infrared (IR) spectra of the 'man-made' platelets are different from the IR spectra of 'natural' platelets. High-temperature (T greater than or equal to 2000 degrees C) annealing of platelets containing type-IaA/B diamonds modifies the IR absorption spectrum owing to the 'natural' platelets and makes it similar to the IR spectrum of the 'man-made' platelets. It is suggested that such high-temperature annealing changes the structure of the 'natural' platelets. The changes are too subtle to be detected by electron microscopy techniques. Topographic electron-energy-loss spectroscopy shows that platelets contain nitrogen at an average density of 0.7 atoms per a(0)(2); however, high-temperature annealing does not seem to affect the concentration of the nitrogen in the platelets.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000075663700004 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1364-2812;1463-6417; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 13 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:25667 Serial 2285  
Permanent link to this record
 

 
Author Balzuweit, K.; Meekes, H.; Van Tendeloo, G.; de Boer, J.L. pdf  doi
openurl 
  Title On the relationship between morphology, composition and structure of Al-Cu-Fe crystals and quasicrystals Type A1 Journal article
  Year 1993 Publication (up) Philosophical magazine: B: physics of condensed matter: electronic, optical and magnetic properties Abbreviated Journal  
  Volume 67 Issue 4 Pages 513-532  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1993LA91100005 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1364-2812;1463-6417; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 10 Open Access  
  Notes Approved COMPUTER SCIENCE, INTERDISCIPLINARY 11/104 Q1 # PHYSICS, MATHEMATICAL 1/53 Q1 #  
  Call Number UA @ lucian @ c:irua:6828 Serial 2451  
Permanent link to this record
 

 
Author Martin, C.; Hervieu, M.; Huvé, M.; Michel, C.; Maignan, A.; Van Tendeloo, G.; Raveau, B. openurl 
  Title Lead-mercury based superconductors: the 1212 cuprate Pb0.7Hg0.3Sr2+xCa0.7Nd0.3-xCu2O7-\delta and the new oxycarbonate Pb0.7Hg0.3Sr4Cu2CO3O7 Type A1 Journal article
  Year 1994 Publication (up) Physica C-Superconductivity And Its Applications Abbreviated Journal Physica C  
  Volume 222 Issue Pages 19-26  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1994NB49400004 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4534 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.942 Times cited 49 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10027 Serial 1812  
Permanent link to this record
 

 
Author Misko, V.R.; Fomin, V.M.; Devreese, J.T.; Moshchalkov, V.V. doi  openurl
  Title Stability of vortex-antivortex molecules in mesoscopic superconducting triangles Type A1 Journal article
  Year 2004 Publication (up) Physica C-Superconductivity And Its Applications Abbreviated Journal Physica C  
  Volume 404 Issue Pages 251-255  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000221211500046 Publication Date 2004-02-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.404 Times cited 2 Open Access  
  Notes Approved Most recent IF: 1.404; 2004 IF: 1.072  
  Call Number UA @ lucian @ c:irua:49453 Serial 3135  
Permanent link to this record
 

 
Author Misko, V.R.; Fomin, V.M.; Devreese, J.T.; Moshchalkov, V.V. doi  openurl
  Title Vortex states in a mescopic superconducting triangle Type A1 Journal article
  Year 2002 Publication (up) Physica C-Superconductivity And Its Applications Abbreviated Journal Physica C  
  Volume 369 Issue Pages 361-365  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000174200000066 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.404 Times cited 14 Open Access  
  Notes Approved Most recent IF: 1.404; 2002 IF: 0.912  
  Call Number UA @ lucian @ c:irua:40883 Serial 3885  
Permanent link to this record
 

 
Author Misko, V.R.; Fomin, V.M.; Devreese, J.T. doi  openurl
  Title Vortex states in a multi-conoid superconducting nanosized bridge Type A1 Journal article
  Year 2002 Publication (up) Physica C-Superconductivity And Its Applications Abbreviated Journal Physica C  
  Volume 369 Issue Pages 356-360  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000174200000065 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.404 Times cited 1 Open Access  
  Notes Approved Most recent IF: 1.404; 2002 IF: 0.912  
  Call Number UA @ lucian @ c:irua:40882 Serial 3886  
Permanent link to this record
 

 
Author Turner, S.; Shenderova, O.; da Pieve, F.; Lu, Y.-G.; Yücelen, E.; Verbeeck, J.; Lamoen, D.; Van Tendeloo, G. pdf  doi
openurl 
  Title Aberration-corrected microscopy and spectroscopy analysis of pristine, nitrogen containing detonation nanodiamond Type A1 Journal article
  Year 2013 Publication (up) Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 210 Issue 10 Pages 1976-1984  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Aberration-corrected transmission electron microscopy, electron energy-loss spectroscopy, and density functional theory (DFT) calculations are used to solve several key questions about the surface structure, the particle morphology, and the distribution and nature of nitrogen impurities in detonation nanodiamond (DND) cleaned by a recently developed ozone treatment. All microscopy and spectroscopy measurements are performed at a lowered acceleration voltage (80/120kV), allowing prolonged and detailed experiments to be carried out while minimizing the risk of knock-on damage or surface graphitization of the nanodiamond. High-resolution TEM (HRTEM) demonstrates the stability of even the smallest nanodiamonds under electron illumination at low voltage and is used to image the surface structure of pristine DND. High resolution electron energy-loss spectroscopy (EELS) measurements on the fine structure of the carbon K-edge of nanodiamond demonstrate that the typical * pre-peak in fact consists of three sub-peaks that arise from the presence of, amongst others, minimal fullerene-like reconstructions at the nanoparticle surfaces and deviations from perfect sp(3) coordination at defects in the nanodiamonds. Spatially resolved EELS experiments evidence the presence of nitrogen within the core of DND particles. The nitrogen is present throughout the whole diamond core, and can be enriched at defect regions. By comparing the fine structure of the experimental nitrogen K-edge with calculated energy-loss near-edge structure (ELNES) spectra from DFT, the embedded nitrogen is most likely related to small amounts of single substitutional and/or A-center nitrogen, combined with larger nitrogen clusters.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000329299700025 Publication Date 2013-10-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 37 Open Access  
  Notes 262348 ESMI; 246791 COUNTATOMS; FWO; Hercules; GOA XANES meets ELNES Approved Most recent IF: 1.775; 2013 IF: 1.525  
  Call Number UA @ lucian @ c:irua:110821UA @ admin @ c:irua:110821 Serial 41  
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Author Mortet, V.; Zhang, L.; Eckert, M.; D'Haen, J.; Soltani, A.; Moreau, M.; Troadec, D.; Neyts, E.; De Jaeger, J.C.; Verbeeck, J.; Bogaerts, A.; Van Tendeloo, G.; Haenen, K.; Wagner, P. pdf  doi
openurl 
  Title Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study Type A1 Journal article
  Year 2012 Publication (up) Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 209 Issue 9 Pages 1675-1682  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this work, a detailed structural and spectroscopic study of nanocrystalline diamond (NCD) thin films grown by a continuous bias assisted CVD growth technique is reported. This technique allows the tuning of grain size and phase purity in the deposited material. The crystalline properties of the films are characterized by SEM, TEM, EELS, and Raman spectroscopy. A clear improvement of the crystalline structure of the nanograined diamond film is observed for low negative bias voltages, while high bias voltages lead to thin films consisting of diamond grains of only ∼10 nm nanometer in size, showing remarkable similarities with so-called ultrananocrystalline diamond. These layers arecharacterized by an increasing amount of sp2-bonded carbon content of the matrix in which the diamond grains are embedded. Classical molecular dynamics simulations support the observed experimental data, giving insight in the underlying mechanism for the observed increase in deposition rate with bias voltage. Furthermore, a high atomic concentration of hydrogen has been determined in these films. Finally, Raman scattering analyses confirm that the Raman line observed at ∼1150 cm−1 cannot be attributed to trans-poly-acetylene, which continues to be reported in literature, reassigning it to a deformation mode of CHx bonds in NCD.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000308942100009 Publication Date 2012-09-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 31 Open Access  
  Notes M.E. and E.N. acknowledge financial support from, respectively, the Institute for Promotion of Innovation through Science and Technology in Flanders (IWT), and the Research Foundation-Flanders (FWO). J.V. gratefully acknowledges financial support from the GOA project “XANES meets ELNES” of the research fund of the University of Antwerp. Calculation support was provided by the University of Antwerp through the core facility CALCUA. G.V.T. acknowledges the ERC grant COUNTATOMS. The work was also financially supported by the joint UAUHasseltMethusalem “NANO” network, the Research Programs G.0068.07 and G.0555.10N of the Research Foundation-Flanders (FWO), the IAP-P6/42 project “Quantum Effects in Clusters and Nanowires”, and by the EU FP7 through the Integrated Infrastructure Initiative “ESMI” (No. 262348), the Marie Curie ITN “MATCON” (PITN-GA-2009-238201), and the Collaborative Project “DINAMO” (No. 245122). Approved Most recent IF: 1.775; 2012 IF: 1.469  
  Call Number UA @ lucian @ c:irua:101516UA @ admin @ c:irua:101516 Serial 1364  
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Author Van Gompel, M.; Atalay, A.Y.; Gaulke, A.; Van Bael, M.K.; D'Haen, J.; Turner, S.; Van Tendeloo, G.; Vanacken, J.; Moshchalkov, V.V.; Wagner, P. pdf  doi
openurl 
  Title Morphological TEM studies and magnetoresistance analysis of sputtered Al-substituted ZnO films : the role of oxygen Type A1 Journal article
  Year 2015 Publication (up) Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 212 Issue 212 Pages 1191-1201  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this article, we report on the synthesis of thin, epitaxial films of the transparent conductive oxide Al:ZnO on (0001)-oriented synthetic sapphire substrates by DC sputtering from targets with a nominal 1 at.% Al substitution. The deposition was carried out at an unusually low substrate temperature of only 250 °C in argonoxygen mixtures as well as in pure argon. The impact of the processgas composition on the morphology was analysed by transmission electron microscopy, revealing epitaxial growth in all the cases with a minor impact of the process parameters on the resulting grain sizes. The transport properties resistivity, Hall effect and magnetoresistance were studied in the range from 10 to 300 K in DC and pulsed magnetic fields up to 45 T. While the carrier density and mobility are widely temperature independent, we identified a low fieldlow temperature regime in which the magnetoresistance shows an anomalous, negative behaviour. At higher fields and temperatures, the magnetoresistance exhibits a more conventional, positive curvature with increasing field strength. As a possible explanation, we propose carrier scattering at localised magnetic trace impurities and magnetic correlations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000356706500003 Publication Date 2015-04-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.775 Times cited Open Access  
  Notes Methusalem project NANO; FWO; 246791 COUNTATOMS Approved Most recent IF: 1.775; 2015 IF: 1.616  
  Call Number c:irua:126732 Serial 2204  
Permanent link to this record
 

 
Author Ekimov, E.A.; Kudryavtsev, O.S.; Turner, S.; Korneychuk, S.; Sirotinkin, V.P.; Dolenko, T.A.; Vervald, A.M.; Vlasov, I.I. pdf  doi
openurl 
  Title The effect of molecular structure of organic compound on the direct high-pressure synthesis of boron-doped nanodiamond: Effect of organic compound on synthesis of boron-doped nanodiamond Type A1 Journal article
  Year 2016 Publication (up) Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 213 Issue 213 Pages 2582-2589  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Evolution of crystalline phases with temperature has been studied in materials produced by high-pressure high-temperature treatment of 9-borabicyclo[3.3.1]nonane dimer (9BBN), triphenylborane and trimesitylborane. The boron-doped diamond nanoparticles with a size below 10 nm were obtained at 8–9 GPa and temperatures 970–1250 °C from 9BBN only. Bridged structure and the presence of boron atom in the carbon cycle of 9BBN were revealed to be a key point for the direct synthesis of doped diamond nanocrystals. The diffusional transformation of the disordered carbon phase is suggested to be the main mechanism of the nanodiamond formation from 9BBN in the temperature range of 970–1400 °C. Aqueous suspensions of primary boron-doped diamond nanocrystals were prepared upon removal of non-diamond phases that opens wide opportunities for application of this new nanomaterial in electronics and biotechnologies.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000388321500006 Publication Date 2016-07-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.775  
  Call Number EMAT @ emat @ c:irua:135175 Serial 4120  
Permanent link to this record
 

 
Author Sankaran, K.J.; Hoang, D.Q.; Srinivasu, K.; Korneychuk, S.; Turner, S.; Drijkoningen, S.; Pobedinskas, P.; Verbeeck, J.; Leou, K.C.; Lin, I.N.; Haenen, K. pdf  doi
openurl 
  Title Type A1 Journal article
  Year 2016 Publication (up) Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 213 Issue 10 Pages 2654-2661  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Utilization of Au and nanocrystalline diamond ( NCD) as interlayers noticeably modifies the microstructure and field electron emission ( FEE) properties of hexagonal boron nitride nanowalls ( hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3V mu m(-1), attaining FEE current density of 2.58mAcm(-2) and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride ( aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000388321500017 Publication Date 2016-09-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 5 Open Access  
  Notes The authors like to thank the financial support of the Research Foundation Flanders (FWO) via Research Projects G.0456.12 and G.0044.13N, the Methusalem “NANO” network. K. J. Sankaran, P. Pobedinskas, and S. Turner are FWO Postdoctoral Fellows of the Research Foundations Flanders (FWO). Approved Most recent IF: 1.775  
  Call Number UA @ lucian @ c:irua:144644UA @ admin @ c:irua:144644 Serial 4655  
Permanent link to this record
 

 
Author Garud, S.; Gampa, N.; Allen, T.G.; Kotipalli, R.; Flandre, D.; Batuk, M.; Hadermann, J.; Meuris, M.; Poortmans, J.; Smets, A.; Vermang, B. doi  openurl
  Title Surface passivation of CIGS solar cells using gallium oxide Type A1 Journal article
  Year 2018 Publication (up) Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 215 Issue 7 Pages 1700826  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000430128500015 Publication Date 2018-02-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 8 Open Access Not_Open_Access  
  Notes ; The work published in this paper was supported by the European Research Council (ERC) under the Union's Horizon 2020 research and innovation programme (grant agreement No 715027). The authors would also like to thank Dr. Marcel Simor (Solliance) for the CIGS layer fabrication and Prof. Johan Lauwaert (Universtiy of Ghent) for his guidance on DLTS measurements. ; Approved Most recent IF: 1.775  
  Call Number UA @ lucian @ c:irua:150761 Serial 4981  
Permanent link to this record
 

 
Author Korneychuk, S.; Guzzinati, G.; Verbeeck, J. pdf  url
doi  openurl
  Title Measurement of the Indirect Band Gap of Diamond with EELS in STEM Type A1 Journal article
  Year 2018 Publication (up) Physica status solidi : A : applications and materials science Abbreviated Journal Phys Status Solidi A  
  Volume 215 Issue 22 Pages 1800318  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this work, a simple method to measure the indirect band gap of diamond with electron energy loss spectroscopy (EELS) in transmission electron microscopy (TEM) is showed. The authors discuss the momentum space resolution achievable with EELS and the possibility of deliberately selecting specific transitions of interest. Based on a simple 2 parabolic band model of the band structure, the authors extend our predictions from the direct band gap case discussed in previous work, to the case of an indirect band gap. Finally, the authors point out the emerging possibility to partly reconstruct the band structure with EELS exploiting our simplified model of inelastic scattering and support it with experiments on diamond.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000450818100004 Publication Date 2018-07-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 6 Open Access Not_Open_Access  
  Notes S.K. and J.V. acknowledge funding from the “Geconcentreerde Onderzoekacties” (GOA) project “Solarpaint” of the University of Antwerp. Financial support via the Methusalem “NANO” network is acknowledged. G.G. acknowledges support from a postdoctoral fellowship grant from the Fonds Wetenschappelijk Onderzoek-Vlaanderen (FWO). The Qu-Ant-EM microscope was partly funded by the Hercules fund from the Flemish Government. “Geconcentreerde Onderzoekacties” (GOA) project “Solarpaint”; Methusalem “NANO” network; Fonds Wetenschappelijk Onderzoek-Vlaanderen (FWO); Hercules fund from the Flemish Government; Approved Most recent IF: 1.775  
  Call Number EMAT @ emat @UA @ admin @ c:irua:155402 Serial 5138  
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Author Jalabert, D.; Pelloux-Gervais, D.; Béché, A.; Hartmann, J.M.; Gergaud, P.; Rouvière, J.L.; Canut, B. doi  openurl
  Title Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering Type A1 Journal article
  Year 2012 Publication (up) Physica Status Solidi A-Applications And Materials Science Abbreviated Journal Phys Status Solidi A  
  Volume 209 Issue 2 Pages 265-267  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub-nanometer resolution and high strain sensitivity that the thin Si cap presents residual compressive strain caused by Ge diffusion coming from the fully strained SiGe layer underneath. The strain state of the SiGe buffer have been checked by X-ray diffraction (XRD) and nano-beam electron diffraction (NBED) measurements.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000303382700005 Publication Date 2011-11-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.775; 2012 IF: 1.469  
  Call Number UA @ lucian @ c:irua:136430 Serial 4497  
Permanent link to this record
 

 
Author Vagov, A.; Croitoru, M.D.; Axt, V.M.; Kuhn, T.; Peeters, F.M. doi  openurl
  Title High pulse area undamping of Rabi oscillations in quantum dots coupled to phonons Type A1 Journal article
  Year 2006 Publication (up) Physica status solidi B – Basic solid state physics Abbreviated Journal Phys Status Solidi B  
  Volume 243 Issue 10 Pages 2233-2240  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000239932300005 Publication Date 2006-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972;1521-3951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.674 Times cited 16 Open Access  
  Notes Approved Most recent IF: 1.674; 2006 IF: 0.967  
  Call Number UA @ lucian @ c:irua:60891 Serial 1440  
Permanent link to this record
 

 
Author Bouwmeester, R.L.; de Hond, K.; Gauquelin, N.; Verbeeck, J.; Koster, G.; Brinkman, A. url  doi
openurl 
  Title Stabilization of the Perovskite Phase in the Y-Bi-O System By Using a BaBiO3 Buffer Layer Type A1 Journal Article
  Year 2019 Publication (up) Physica Status Solidi-Rapid Research Letters Abbreviated Journal Phys Status Solidi-R  
  Volume 13 Issue 7 Pages 1970028  
  Keywords A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;  
  Abstract A topological insulating phase has theoretically been predicted for the thermodynamically unstable perovskite phase of YBiO3. Here, it is shown that the crystal structure of the Y-Bi-O system can be controlled by using a BaBiO3 buffer layer. The BaBiO3 film overcomes the large lattice mismatch with the SrTiO3 substrate by forming a rocksalt structure in between the two perovskite structures. Depositing an YBiO3 film directly on a SrTiO3 substrate gives a fluorite structure. However, when the Y–Bi–O system is deposited on top of the buffer layer with the correct crystal phase and comparable lattice constant, a single oriented perovskite structure with the expected lattice constants is observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 2019-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6254 ISBN Additional Links  
  Impact Factor 3.032 Times cited Open Access  
  Notes The work at the University of Twente is financially supported by NWO through a VICI grant. N.G. and J.V. acknowledge financial support from the GOA project Solarpaint of the University of Antwerp. The microscope used for this experiment has been partially financed by the Hercules Fund from the Flemish Government. L. Ding is acknowledge for his help with the GPA analysis. Approved Most recent IF: 3.032  
  Call Number EMAT @ emat @ Serial 5358  
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Author Wang, J.; Nguyen, M.D.; Gauquelin, N.; Verbeeck, J.; Do, M.T.; Koster, G.; Rijnders, G.; Houwman, E. url  doi
openurl 
  Title On the importance of the work function and electron carrier density of oxide electrodes for the functional properties of ferroelectric capacitors Type A1 Journal article
  Year 2020 Publication (up) Physica Status Solidi-Rapid Research Letters Abbreviated Journal Phys Status Solidi-R  
  Volume 14 Issue 14 Pages 1900520  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract It is important to understand the effect of the interfaces between the oxide electrode layers and the ferroelectric layer on the polarization response for optimizing the device performance of all-oxide ferroelectric devices. Herein, the effects of the oxide La0.07Ba0.93SnO3 (LBSO) as an electrode material in an PbZr0.52Ti0.48O3 (PZT) ferroelectric capacitor are compared with those of the more commonly used SrRuO3 (SRO) electrode. SRO (top)/PZT/SRO (bottom), SRO/PZT/LBSO, and SRO/PZT/2 nm SRO/LBSO devices are fabricated. Only marginal differences in crystalline properties, determined by X-ray diffraction and scanning transmission electron microscopy, are found. High-quality polarization loops are obtained, but with a much larger coercive field for the SRO/PZT/LBSO device. In contrast to the SRO/PZT/SRO device, the polarization decreases strongly with increasing field cycling. This fatigue problem can be remedied by inserting a 2 nm SRO layer between PZT and LBSO. It is argued that strongly increased charge injection into the PZT occurs at the bottom interface, because of the low PZT/LBSO interfacial barrier and the much lower carrier density in LBSO, as compared with that in SRO, causing a low dielectric constant, depleted layer in LBSO. The charge injection creates a trapped space charge in the PZT, causing the difference in fatigue behavior.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000506195600001 Publication Date 2019-12-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6254 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.8 Times cited 6 Open Access OpenAccess  
  Notes ; This work was supported by Nederlandse Organisatie voor Wetenschappelijk Onderzoek through grant no.13HTSM01. ; Approved Most recent IF: 2.8; 2020 IF: 3.032  
  Call Number UA @ admin @ c:irua:165681 Serial 6316  
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R. pdf  doi
openurl 
  Title Electron-diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals Type A1 Journal article
  Year 1994 Publication (up) Physica status solidi: A Abbreviated Journal  
  Volume 143 Issue 2 Pages 277-287  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract The occurrence and origin of diffuse intensity contours in electron micrographs of AgBr crystals are investigated. The observations are interpreted in terms of a model, which attributes diffuse scattering to the presence of predominant atom or vacancy clusters of a particular polyhedral type. It is shown that irrespective of the crystal morphology, interstitial Ag ions order in AgBr material in clusters of finite size along 001 type planes. A different geometry of the diffuse intensity locus observed for triangular and hexagonal tabular grains is explained in terms of the different twin plane morphology of these grains.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1994NW15300010 Publication Date 2007-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:99870 Serial 919  
Permanent link to this record
 

 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. doi  openurl
  Title Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM Type A1 Journal article
  Year 1999 Publication (up) Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland Abbreviated Journal Phys Status Solidi A  
  Volume 171 Issue 1 Pages 147-157  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.  
  Address  
  Corporate Author Thesis  
  Publisher Wiley Place of Publication Berlin Editor  
  Language Wos 000078539700020 Publication Date 2002-09-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 40 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:95798 Serial 1152  
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Author Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Cros, C. pdf  doi
openurl 
  Title Atomic imaging of cage like structures of silicon Type A1 Journal article
  Year 1994 Publication (up) Physica status solidi: A: applied research Abbreviated Journal  
  Volume 146 Issue Pages 119-132  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1994PV89500010 Publication Date 2007-01-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 12 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10043 Serial 167  
Permanent link to this record
 

 
Author Willems, B.; Martineau, P.M.; Fisher, D.; van Royen, J.; Van Tendeloo, G. doi  openurl
  Title Dislocation distributions in brown diamond Type A1 Journal article
  Year 2006 Publication (up) Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A  
  Volume 203 Issue 12 Pages 3076-3080  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000240967400014 Publication Date 2006-09-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300;1862-6319; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 21 Open Access  
  Notes Approved Most recent IF: 1.775; 2006 IF: NA  
  Call Number UA @ lucian @ c:irua:61002 Serial 730  
Permanent link to this record
 

 
Author Volkov, V.V.; Luyten, W.; van Landuyt, J.; Férauge, C.; Oksenoid, K.G.; Gijbels, R.; Vasilev, M.G.; Shelyakin, A.A.; Lazarev, V.B. pdf  doi
openurl 
  Title Electron microscopy and mass-spectrometry study of In GaAsP/InP heterostructures (p-i-n diodes) grown by liquid phase epitaxy Type A1 Journal article
  Year 1993 Publication (up) Physica status solidi: A: applied research Abbreviated Journal  
  Volume 140 Issue Pages 73-85  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1993MM00800004 Publication Date 2007-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:6159 Serial 945  
Permanent link to this record
 

 
Author Luyten, W.; Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Férauge, C.; Gijbels, R.; Vasilev, M.G.; Shelyakin, A.A.; Lazarev, V.B. doi  openurl
  Title Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy Type A1 Journal article
  Year 1993 Publication (up) Physica status solidi: A: applied research Abbreviated Journal  
  Volume 140 Issue 2 Pages 453-462  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Broad area as well as buried heterostructure lasers based on In0.72Ga0.28As0.62P0.38/InP and emitting at 1.3 mum are grown by liquid phase epitaxy and are studied in detail by means of transmission electron microscopy, X-ray diffraction, secondary ion mass-spectrometry, and electroluminescence. The InGaAsP epilayer is found to be well lattice-matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in the InGaAsP alloy. We also report on the high performance characteristics of the infrared lasers.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1993MP79700015 Publication Date 2007-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 3 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:6156 Serial 946  
Permanent link to this record
 

 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. openurl 
  Title Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM Type A1 Journal article
  Year 1999 Publication (up) Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A  
  Volume 171 Issue 1 Pages 147-157  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000078539700020 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 40 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29687 Serial 1153  
Permanent link to this record
 

 
Author Titantah, J.T.; Lamoen, D. doi  openurl
  Title First-principles characterization of amorphous carbon nitride systems: structural and electronic properties Type A1 Journal article
  Year 2006 Publication (up) Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A  
  Volume 203 Issue 12 Pages 3191-3197  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000240967400032 Publication Date 2006-09-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300;1862-6319; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited 3 Open Access  
  Notes Approved Most recent IF: 1.775; 2006 IF: NA  
  Call Number UA @ lucian @ c:irua:61003 Serial 1205  
Permanent link to this record
 

 
Author Salluzzo, M.; Aruta, C.; Maggio-Aprile, I.; Fischer, Ø.; Bals, S.; Zegenhagen, J. doi  openurl
  Title Growth of R1+xBa2-xCu3O7-\delta epitaxial films investigated by in situ scanning tunneling microscopy Type A1 Journal article
  Year 2001 Publication (up) Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A  
  Volume 186 Issue 3 Pages 339-364  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The problem of the epitaxial growth of the high temperature superconducting R1+xBa2xCu3O7δ (R = Y or rare earth except Ce and Tb) films has been addressed. Using in situ ultra high vacuum Scanning Tunneling Microscopy (UHV-STM) we have studied the role of cationic substitution and substrate mismatch on the growth mode of stoichiometric and Nd-rich Nd1+xBa2xCu3O7δ thin films. The results are compared to the growth of Y1Ba2Cu3O7δ, Dy1Ba2Cu3O7δ and Gd1Ba2Cu3O7δ epitaxial films. Two main phenomena are investigated: a) the first stage of the direct nucleation on the substrate and b) the crossover between 2D and 3D growth upon increasing the film thickness. At the first stage of the growth, pseudo-cubic perovskite (Re,Ba)CuO3 nuclei are formed. While they disappear after the growth of a few nm in stoichiometric films, they persist on the surface of Nd-rich films of up to 110 nm thickness. Stoichiometric R1+xBa2xCu3O7δ films exhibit a rough morphology with increasing thickness due to island growth mode, whereas Nd-rich films remain smooth and continue to grow layer by layer. It is proposed that linear defects (like anti-phase boundaries), which are formed due to the misalignment of growth fronts, are the source of screw dislocations in stoichiometric films. In Nd-rich films, linear defects are eliminated through the insertion of (Nd,Ba)CuO3 extra layers without introduction of any screw dislocations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000170844500002 Publication Date 2004-11-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 17 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:87587 Serial 1398  
Permanent link to this record
 

 
Author Nistor, L.C.; Van Tendeloo, G.; Dincã, G. pdf  doi
openurl 
  Title HRTEM studies of dislocations in cubic BN Type A1 Journal article
  Year 2004 Publication (up) Physica status solidi: A: applied research Abbreviated Journal Phys Status Solidi A  
  Volume 201 Issue 11 Pages 2578-2582  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000224152700034 Publication Date 2004-09-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 8 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54849 Serial 1516  
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