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“High-capacity hydrogen storage in Al-adsorbed graphene”. Ao ZM, Peeters FM, Physical review : B : condensed matter and materials physics 81, 205406 (2010). http://doi.org/10.1103/PhysRevB.81.205406
Abstract: A high-capacity hydrogen storage mediumAl-adsorbed grapheneis proposed based on density-functional theory calculations. We find that a graphene layer with Al adsorbed on both sides can store hydrogen up to 13.79 wt % with average adsorption energy −0.193 eV/H2. Its hydrogen storage capacity is in excess of 6 wt %, surpassing U. S. Department of Energy (DOEs) target. Based on the binding-energy criterion and molecular-dynamics calculations, we find that hydrogen storage can be recycled at near ambient conditions. This high-capacity hydrogen storage is due to the adsorbed Al atoms that act as bridges to link the electron clouds of the H2 molecules and the graphene layer. As a consequence, a two-layer arrangement of H2 molecules is formed on each side of the Al-adsorbed graphene layer. The H2 concentration in the hydrogen storage medium can be measured by the change in the conductivity of the graphene layer.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 219
DOI: 10.1103/PhysRevB.81.205406
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“High crystalline quality erbium silicide films on (100) silicon grown in high vacuum”. Kaltsas G, Travlos A, Nassiopoulos AG, Frangis N, van Landuyt J, Applied surface science 102, 151 (1996). http://doi.org/10.1016/0169-4332(96)00036-0
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 14
DOI: 10.1016/0169-4332(96)00036-0
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“High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers”. Germain M, Leys M, Boeykens S, Degroote S, Wang W, Schreurs D, Ruythooren W, Choi K-H, van Daele B, Van Tendeloo G, Borghs G, Materials Research Society symposium proceedings 798, Y10.22 (2004)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“High energy transitions and phonon-assisted harmonics of a shallow magneto-donor in GaAs/AlGaAs multiple quantum wells”. Bruno-Alfonso A, Hai G-Q, Peeters FM, Yeo T, Ryu SR, McCombe BD, , 1413 (2001)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“High energy transitions of shallow magneto-donors in a GaAs/Al0.3Ga0.7As multiple quantum well”. Bruno-Alfonso A, Hai G-Q, Peeters FM, Yeo T, Ryu SR, McCombe BD, Journal of physics : condensed matter 13, 9761 (2001). http://doi.org/10.1088/0953-8984/13/43/307
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.649
Times cited: 7
DOI: 10.1088/0953-8984/13/43/307
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“High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures”. Wang YJ, Jiang ZX, McCombe BD, Peeters FM, Wu XG, Hai GQ, Eusfis TJ, Schaff W, Physica: B : condensed matter 256/258, 215 (1998). http://doi.org/10.1016/S0921-4526(98)00572-9
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.386
Times cited: 5
DOI: 10.1016/S0921-4526(98)00572-9
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“High-field magneto-resistance in GaAs-GaAlAs heterojunctions”. Leadley DR, Nicholas RJ, Xu W, Peeters FM, Devreese JT, Foxon CT, Harris JJ, Physica: B : condensed matter 184, 197 (1993). http://doi.org/10.1016/0921-4526(93)90348-A
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.319
Times cited: 4
DOI: 10.1016/0921-4526(93)90348-A
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“High-field magnetoexcitons in unstrained GaAs/AlxGa1-xAs quantum dots”. Sidor Y, Partoens B, Peeters FM, Schildermans N, Hayne M, Moshchalkov VV, Rastelli A, Schmidt OG, Physical review : B : condensed matter and materials physics 73, 155334 (2006). http://doi.org/10.1103/PhysRevB.73.155334
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 50
DOI: 10.1103/PhysRevB.73.155334
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“High-field magnetoresistance in GaAs/Ga0.7Al0.3As heterojunctions arising from elastic and inelastic scattering”. Leadley DR, Nicholas RJ, Xu W, Peeters FM, Devreese JT, Singleton J, Perenboom JA, van Bockstal L, Herlach F, Foxon CT, Harris JJ, Physical review : B : condensed matter and materials physics 48, 5457 (1993). http://doi.org/10.1103/PhysRevB.48.5457
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 22
DOI: 10.1103/PhysRevB.48.5457
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“High field magnetotransport in a Ga0.8In0.2As quantum well with a parallel δ-layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, van Hove M, Borghs G, , 588 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“High field transport in high carrier density GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructures”. van der Burgt M, van Esch A, Peeters FM, van Hove M, Borghs G, Herlach F, Physica: B : condensed matter 184, 211 (1993). http://doi.org/10.1016/0921-4526(93)90351-6
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 4
DOI: 10.1016/0921-4526(93)90351-6
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“High-field transport properties of graphene”. Dong HM, Xu W, Peeters FM, Journal of applied physics 110, 063704 (2011). http://doi.org/10.1063/1.3633771
Abstract: We present a theoretical investigation on the transport properties of graphene in the presence of high dc driving fields. Considering electron interactions with impurities and acoustic and optical phonons in graphene, we employ the momentum- and energy-balance equations derived from the Boltzmann equation to self-consistently evaluate the drift velocity and temperature of electrons in graphene in the linear and nonlinear response regimes. We find that the current-voltage relation exhibits distinctly nonlinear behavior, especially in the high electric field regime. Under the action of high-fields the large source-drain (sd) current density can be achieved and the current saturation in graphene is incomplete with increasing the sd voltage Vsd up to 3 V. Moreover, for high fields, Vsd>0.1 V, the heating of electrons in graphene occurs. It is shown that the sd current and electron temperature are sensitive to electron density and lattice temperature in the graphene device. This study is relevant to the application of graphene as high-field nano-electronic devices such as graphene field-effect transistors.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 17
DOI: 10.1063/1.3633771
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“High harmonic generation from spin resonance fluorescence”. Nogaret A, Samardak A, Peeters F, Physica. E: Low-dimensional systems and nanostructures 40, 1223 (2008). http://doi.org/10.1016/j.physe.2007.08.038
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 1
DOI: 10.1016/j.physe.2007.08.038
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“High magnetic ordering temperature in the perovskites Sr4-xLaxFe3ReO12 (x=0.0, 1.0, 2.0)”. Retuerto M, Li MR, Go YB, Ignatov A, Croft M, Ramanujachary KV, Herber RH, Nowik I, Hodges JP, Dachraoui W, Hadermann J, Greenblatt M;, Journal of solid state chemistry 194, 48 (2012). http://doi.org/10.1016/j.jssc.2012.06.031
Abstract: A series of perovskites Sr4−xLaxFe3ReO12 (x=0.0, 1.0, 2.0) has been prepared by wet chemistry methods. The structure analyses by powder X-ray and neutron diffraction and electron microscopy show that these compounds adopt simple perovskite structures without cation ordering over the B sites: tetragonal (I4/mcm) for x=0.0 and 1.0 and orthorhombic (Pbmn) for x=2.0. The oxidation states of the cations in the compound with x=0.0 appear to be Fe3+/4+ and Re7+ and decrease for both with La substitution as evidenced by X-ray absorption spectroscopy. All the compounds are antiferromagnetically ordered above room temperature, as demonstrated by Mössbauer spectroscopy and the magnetic structures, which were determined by powder neutron diffraction. The substitution of Sr by La strongly affects the magnetic properties with an increase of TN up to ∼750 K.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 9
DOI: 10.1016/j.jssc.2012.06.031
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“High-mobility Bi2Se3 nanoplates manifesting quantum oscillations of surface states in the sidewalls”. Yan Y, Wang L-X, Ke X, Van Tendeloo G, Wu X-S, Yu D-P, Liao Z-M, Scientific reports 4, 3817 (2014). http://doi.org/10.1038/srep03817
Abstract: Magnetotransport measurements of topological insulators are very important to reveal the exotic topological surface states for spintronic applications. However, the novel properties related to the surface Dirac fermions are usually accompanied by a large linear magnetoresistance under perpendicular magnetic field, which makes the identification of the surface states obscure. Here, we report prominent Shubnikov-de Haas (SdH) oscillations under an in-plane magnetic field, which are identified to originate from the surface states in the sidewalls of topological insulator Bi2Se3 nanoplates. Importantly, the SdH oscillations appear with a dramatically weakened magnetoresistance background, offering an easy path to probe the surface states directly when the coexistence of surface states and bulk conduction is inevitable. Moreover, under a perpendicular magnetic field, the oscillations in Hall conductivity have peak-to-valley amplitudes of 2 e(2)/h, giving confidence to achieve a quantum Hall effect in this system. A cross-section view of the nanoplate shows that the sidewall is (015) facet dominant and therefore forms a 586 angle with regard to the top/ bottom surface instead of being perpendicular; this gives credit to the surface states' behavior as two-dimensional transport.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 4.259
Times cited: 31
DOI: 10.1038/srep03817
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“High precision determination of the elastic strain of InGaN/GaN multiple quantum wells”. Wu MF, Zhou S, Yao S, Zhao Q, Vantomme A, van Daele B, Piscopiello E, Van Tendeloo G, Tong YZ, Yang ZJ, Yu TJ, Zhang GY, Journal of vacuum science and technology: B: microelectronics and nanometer structures 22, 920 (2004). http://doi.org/10.1116/1.1715085
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1116/1.1715085
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“High precision measurements of atom column positions using model-based exit wave reconstruction”. de Backer A, Van Aert S, van Dyck D, Ultramicroscopy 111, 1475 (2011). http://doi.org/10.1016/j.ultramic.2011.07.002
Abstract: In this paper, it has been investigated how to measure atom column positions as accurately and precisely as possible using a focal series of images. In theory, it is expected that the precision would considerably improve using a maximum likelihood estimator based on the full series of focal images. As such, the theoretical lower bound on the variances of the unknown atom column positions can be attained. However, this approach is numerically demanding. Therefore, maximum likelihood estimation has been compared with the results obtained by fitting a model to a reconstructed exit wave rather than to the full series of focal images. Hence, a real space model-based exit wave reconstruction technique based on the channelling theory is introduced. Simulations show that the reconstructed complex exit wave contains the same amount of information concerning the atom column positions as the full series of focal images. Only for thin samples, which act as weak phase objects, this information can be retrieved from the phase of the reconstructed complex exit wave.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 8
DOI: 10.1016/j.ultramic.2011.07.002
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“High pressure limiting forms of the zero-temperature equations of state of Ta and Pu from relativistic Thomas-Fermi theory”. Leys FE, March NH, Lamoen D, Physical Review B 67, 064109 (2003). http://doi.org/10.1103/PhysRevB.67.064109
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 3.836
Times cited: 1
DOI: 10.1103/PhysRevB.67.064109
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“High pulse area undamping of Rabi oscillations in quantum dots coupled to phonons”. Vagov A, Croitoru MD, Axt VM, Kuhn T, Peeters FM, Physica status solidi B –, Basic solid state physics 243, 2233 (2006). http://doi.org/10.1002/pssb.200668029
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 16
DOI: 10.1002/pssb.200668029
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“High-quality sample preparation by low kV FIB thinning for analytical TEM measurements”. Bals S, Tirry W, Geurts R, Yang Z, Schryvers D, Microscopy and microanalysis 13, 80 (2007). http://doi.org/10.1017/S1431927607070018
Abstract: Focused ion beam specimen preparation has been used for NiTi samples and SrTiO(3)/SrRuO(3) multilayers with prevention of surface amorphization and Ga implantation by a 2-kV cleaning procedure. Transmission electron microscopy techniques show that the samples are of high quality with a controlled thickness over large scales. Furthermore, preferential thinning effects in multicompounds are avoided, which is important when analytical transmission electron microscopy measurements need to be interpreted in a quantitative manner. The results are compared to similar measurements acquired for samples obtained using conventional preparation techniques such as electropolishing for alloys and ion milling for oxides.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.891
Times cited: 82
DOI: 10.1017/S1431927607070018
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“High reflective mirrors for in-vessel applications in ITER”. Razdobarin AG, Mukhin EE, Semenov VV, YuTolstyakov S, Kochergin MM, Kurskiev GS, Podushnikova KA, Kirilenko DA, Sitnikova AA, Gorodetsky АЕ, Bukhovets VL, Zalavutdinov RK, Zakharov АP, Arkhipov II, Voitsenya VS, Bondarenko VN, Konovalov VG, Ryzhkov IV;, Nuclear instruments and methods in physics research : A: accelerators, spectrometers, detectors and associated equipment 623, 809 (2010). http://doi.org/10.1016/j.nima.2010.04.047
Abstract: The structure and surface morphology of aluminum and silver mirrors covered with protective dielectric oxide layer were studied by means of TEM and SEM. The presence of needle-like pores throughout the thickness of the ZrO(2) film and bubble-like pores in Al(2)O(3) was observed. The test for resistivity to deuterium ion bombardment shows that the exposition to a fluence of similar to 2 x 10(20) ions/cm(2) with the ion energy of 40-50 eV results in appearance of blisters on the surface of mirrors covered wit h Al(2)O(3). For the mirrors protected with ZrO(2) no noticeable changes in surface morphology and reflectivity were found even after order of magnitude higher ion fluence. The effect of different porous structures on blistering phenomena is discussed. (C) 2010 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.362
Times cited: 4
DOI: 10.1016/j.nima.2010.04.047
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“High resolution electron microscopic study of Ba7Sc6Al2O19 and related phases”. Shpanchenko RV, Nistor L, Van Tendeloo G, Amelinckx S, Antipov EV, Kovba LM, Journal of solid state chemistry 113, 193 (1994). http://doi.org/10.1006/jssc.1994.1359
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.133
Times cited: 3
DOI: 10.1006/jssc.1994.1359
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“High-resolution electron microscopy and electron energy-loss spectroscopy of giant palladium clusters”. Oleshko V, Volkov V, Gijbels R, Jacob W, Vargaftik M, Moiseev I, Van Tendeloo G, Zeitschrift für Physik : D : atoms, molecules and clusters 34, 283 (1995). http://doi.org/10.1007/BF01437574
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); Electron microscopy for materials research (EMAT)
Times cited: 22
DOI: 10.1007/BF01437574
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“High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis”. Nistor L, Nistor SV, Dincã, G, van Landuyt J, Schoemaker D, Copaciu V, Georgeoni P, Arnici N, Diamonds an related materials 8, 738 (1999). http://doi.org/10.1016/S0925-9635(98)00282-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 7
DOI: 10.1016/S0925-9635(98)00282-9
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“High-resolution electron microscopy and electron tomography: resolution versus precision”. Van Aert S, den Dekker AJ, van Dyck D, van den Bos A, Journal of structural biology 138, 21 (2002). http://doi.org/10.1016/S1047-8477(02)00016-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.767
Times cited: 33
DOI: 10.1016/S1047-8477(02)00016-3
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“High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing”. Frangis N, van Landuyt J, Lartiprete R, Martelli S, Borsella E, Chiussi S, Castro J, Leon B, Applied physics letters 72, 2877 (1998). http://doi.org/10.1063/1.121487
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 16
DOI: 10.1063/1.121487
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“High resolution electron microscopy for materials”. van Landuyt J Eurem 92, Granada, page 23 (1992).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
Times cited: 7
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“High-resolution electron microscopy for semiconducting materials science”. van Landuyt J, Vanhellemont J Elsevier, Amsterdam, page 1109 (1994).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“High-resolution electron microscopy : from imaging toward measuring”. Van Aert S, den Dekker AJ, van den Bos A, van Dyck D, IEEE transactions on instrumentation and measurement 51, 611 (2002). http://doi.org/10.1109/TIM.2002.802250
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.456
Times cited: 13
DOI: 10.1109/TIM.2002.802250
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“High resolution electron microscopy in materials research”. Van Tendeloo G, Journal of materials chemistry 8, 797 (1998). http://doi.org/10.1039/a708240a
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 8
DOI: 10.1039/a708240a
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