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	Author	Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J.
	Title	A 2a2b3c superstructure in hexagonal NiS_1-x: a study by means of electron diffraction and HREM			Type	A1 Journal article
	Year	1993	Publication	Journal of crystal growth	Abbreviated Journal	J Cryst Growth
	Volume	126	Issue		Pages	457-465
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1993KH92500029	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-0248	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.698	Times cited	4	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:7499			Serial	9
Permanent link to this record



	Author	Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J.
	Title	A 2a2a3c superstructure in hexagonal Ni_1-xS : a study by means of electron-diffraction and HRTEM			Type	A1 Journal article
	Year	1993	Publication	Journal of crystal growth	Abbreviated Journal	J Cryst Growth
	Volume	126	Issue	2-3	Pages	457-465
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The high temperature phase of Ni1-xS has the NiAs-type structure. The coexistence of two superstructures, ''3a3a3c'' and ''2a2a3c'' with the basic phase is confirmed by means of electron diffraction. The 2a2a3c superstructure is studied by means of electron diffraction and high resolution electron microscopy. A structure model is proposed based on the periodic insertion of stacking faults in the NiAs-type basic structure and the ordering of vacancies in alternate metal-atom layers. Microtwinning in very narrow slabs is found to be a main feature of the 2a2a3c regions and two defect models are discussed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1993KH92500029	Publication Date	2002-10-16
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-0248;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.698	Times cited	4	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:103012			Serial	23
Permanent link to this record



	Author	Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J.
	Title	A counterion-catalyzed (S⁰H⁺)(X^-I⁺) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions			Type	A1 Journal article
	Year	2003	Publication	The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical	Abbreviated Journal	J Phys Chem B
	Volume	107	Issue	16	Pages	3690-3696
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
	Abstract	An alternative pathway to assemble mesoporous molecular sieve silicas is developed using nonionic alkylamines and N,N-dimethylalkylamines (SO) as structure-directing agents in acidic conditions. The synthesized mesostructures possess wormhole-like frameworks with pore sizes and pore volumes in the range of 20-90 Angstrom and 0.5-1.3 cm(3)/g, respectively. The formation of the mesophase is controlled by a counterion-mediated mechanism of the type (S(0)H(+))(X(-)I(+)), where S(0)H(+) are protonated water molecules that are hydrogen bonded to the lone electron pairs on the amine surfactant headgroups (S(0)H(+)), X(-) is the counteranion originating from the acid, and I(+) are the positively charged (protonated) silicate species. We found that the stronger the ion X(-) is bonded to S(0)H(+), the more it catalyzes the silica condensation into (S(0)H(+))(X(-)I(+)). Br(-) is shown to be a strong binding anion and therefore a fast silica polymerization promoter compared to Cl(-) resulting in the formation of a higher quality mesophase for the Br(-) syntheses. We also showed that the polymerization rate of the silica, dictated by the counterion, controls the morphology of the mesostructures from nonuniform agglomerated blocks in the case of Br(-) syntheses to spherical particles for the Cl(-) syntheses. Next to many benefits such as low temperature, short synthesis time, and the use of inexpensive, nontoxic, and easily extractable amine templates, the developed materials have a remarkable higher thermal and hydrothermal stability compared to hexagonal mesoporous silica, which is also prepared with nonionic amines but formed through the S(0)I(0) mechanism.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Washington, D.C.	Editor
	Language		Wos	000182350200005	Publication Date	2003-04-17
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1520-6106;1520-5207;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.177	Times cited	9	Open Access
	Notes				Approved	Most recent IF: 3.177; 2003 IF: 3.679
	Call Number	UA @ lucian @ c:irua:103300			Serial	24
Permanent link to this record



	Author	de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C.
	Title	A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon			Type	A1 Journal article
	Year	2003	Publication	Physica: B : condensed matter T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK	Abbreviated Journal	Physica B
	Volume	340	Issue		Pages	1013-1017
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000188300200213	Publication Date	2003-11-24
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.386	Times cited	4	Open Access
	Notes				Approved	Most recent IF: 1.386; 2003 IF: 0.908
	Call Number	UA @ lucian @ c:irua:103784			Serial	25
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	Author	De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J.
	Title	Accurate infrared absorption measurement of interstitial and precipitated oxygen in p⁺ silicon wafers			Type	A1 Journal article
	Year	1999	Publication	Microelectronic engineering	Abbreviated Journal	Microelectron Eng
	Volume	45	Issue	2-3	Pages	277-282
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000081748600023	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0167-9317;	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor	1.806	Times cited		Open Access
	Notes	Fwo-G.0051.97; Fwo-G.00117.86			Approved	Most recent IF: 1.806; 1999 IF: 0.815
	Call Number	UA @ lucian @ c:irua:95791			Serial	47
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	Author	de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J.
	Title	Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon			Type	A1 Journal article
	Year	1999	Publication	The review of scientific instruments	Abbreviated Journal	Rev Sci Instrum
	Volume	70	Issue	9	Pages	3661-3663
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6].
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000082289200026	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0034-6748;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.515	Times cited	5	Open Access
	Notes				Approved	Most recent IF: 1.515; 1999 IF: 1.293
	Call Number	UA @ lucian @ c:irua:103487			Serial	48
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	Author	Zhang, X.F.; Zhang, X.B.; Van Tendeloo, G.; Amelinckx, S.; op de Beeck, M.; van Landuyt, J.
	Title	Carbon nano-tubes: their formation process and observation by electron microscopy			Type	A1 Journal article
	Year	1993	Publication	Journal of crystal growth	Abbreviated Journal	J Cryst Growth
	Volume	130	Issue		Pages	368-382
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1993LK45300003	Publication Date	2002-10-16
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-0248;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.698	Times cited	190	Open Access
	Notes				Approved
	Call Number	UA @ lucian @ c:irua:6786			Serial	281
Permanent link to this record



	Author	Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K.
	Title	Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation			Type	A1 Journal article
	Year	2001	Publication	Institute of physics conference series	Abbreviated Journal
	Volume		Issue	169	Pages	481-484
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-7503-0818-4	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95163			Serial	311
Permanent link to this record



	Author	Yasuda, K.; Hisatsune, K.; Udoh, K.; Tanaka, Y.; Van Tendeloo, G.; van Landuyt, J.
	Title	Characteristic mosaic texture related to orderingin AuCu-9at.%Ag pseudobinary alloy			Type	A3 Journal article
	Year	1992	Publication	Dentistry in Japan	Abbreviated Journal
	Volume	29	Issue		Pages	91-102
	Keywords	A3 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Tokyo	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0070-3737	ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	PHYSICS, APPLIED 28/145 Q1 #
	Call Number	UA @ lucian @ c:irua:4105			Serial	313
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	Author	Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Geuens, I.; Gijbels, R.; Jacob, W.; Verbeeck, A.; de Keyzer, R.
	Title	Characterization of crystal defects and analysis of iodide distribution in mixed tabular silver halide grains by conventional transmission electron microscopy, X-ray diffractometry and back-scattered electron imaging			Type	P3 Proceeding
	Year	1991	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords	P3 Proceeding; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	St. Paul, Minn.	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved
	Call Number	UA @ lucian @ c:irua:710			Serial	320
Permanent link to this record



	Author	Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Verbeeck, A.; de Keyzer, R.
	Title	Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry			Type	A1 Journal article
	Year	1991	Publication	Journal of crystal growth	Abbreviated Journal	J Cryst Growth
	Volume	110	Issue		Pages	930-941
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1991FL02100033	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-0248	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.698	Times cited	40	Open Access
	Notes				Approved
	Call Number	UA @ lucian @ c:irua:48349			Serial	321
Permanent link to this record



	Author	Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A.
	Title	Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas			Type	A1 Journal article
	Year	1997	Publication	Journal of crystal growth	Abbreviated Journal	J Cryst Growth
	Volume	173	Issue		Pages	285-296
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1997XC98100008	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-0248	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.751	Times cited	4	Open Access
	Notes				Approved	Most recent IF: 1.751; 1997 IF: 1.259
	Call Number	UA @ lucian @ c:irua:20459			Serial	324
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	Author	de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C.
	Title	Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy			Type	A1 Journal article
	Year	2004	Publication	Journal of the electrochemical society	Abbreviated Journal	J Electrochem Soc
	Volume	151	Issue	9	Pages	G598-G605
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Infrared absorption spectra of oxygen precipitates in boron-doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function representation of composite materials. The aspect ratio of the platelet precipitates is determined by transmission electron microscopy measurements. The analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOγ precipitates are formed with the same composition as in the lightly doped case. In the heavily boron-doped (>10(18) cm(-3)) samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3, with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case. (C) 2004 The Electrochemical Society.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000223622000072	Publication Date	2004-08-30
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0013-4651;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.259	Times cited	13	Open Access
	Notes	Fwo; Iuap P5/01			Approved	Most recent IF: 3.259; 2004 IF: 2.356
	Call Number	UA @ lucian @ c:irua:103760			Serial	330
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	Author	van Landuyt, J.; Van Tendeloo, G.
	Title	Charcaterization by high-resolution transmission electron microscopy			Type	H3 Book chapter
	Year	1998	Publication		Abbreviated Journal
	Volume		Issue		Pages	187-190
	Keywords	H3 Book chapter; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Stt	Place of Publication	Den Haag	Editor
	Language		Wos	A1990DC39700012	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29685			Serial	335
Permanent link to this record



	Author	Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S.
	Title	Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy			Type	A1 Journal article
	Year	2001	Publication	Materials science in semiconductor processing	Abbreviated Journal	Mat Sci Semicon Proc
	Volume	4	Issue	1/3	Pages	109-111
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Oxford	Editor
	Language		Wos	000167727200026	Publication Date	2002-10-14
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1369-8001;	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor	2.359	Times cited		Open Access
	Notes				Approved	Most recent IF: 2.359; 2001 IF: 0.419
	Call Number	UA @ lucian @ c:irua:94967			Serial	343
Permanent link to this record



	Author	De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C.
	Title	Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy			Type	P1 Proceeding
	Year	2002	Publication		Abbreviated Journal
	Volume		Issue		Pages	183-194
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract	Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	S.l.	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1-56677-344-X	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:94950			Serial	344
Permanent link to this record



	Author	de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E.
	Title	Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM			Type	A1 Journal article
	Year	2001	Publication	Physica: B : condensed matter T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY	Abbreviated Journal	Physica B
	Volume	308	Issue		Pages	294-297
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher	Elsevier science bv	Place of Publication	Amsterdam	Editor
	Language		Wos	000173660100073	Publication Date	2002-10-15
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.386	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 1.386; 2001 IF: 0.663
	Call Number	UA @ lucian @ c:irua:103389			Serial	345
Permanent link to this record



	Author	Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G.
	Title	The chirality of carbon nanotubules determined by dark-field electron microscopy			Type	A1 Journal article
	Year	1996	Publication	Philosophical magazine: A: physics of condensed matter: defects and mechanical properties	Abbreviated Journal
	Volume	74	Issue	3	Pages	723-740
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Multishell carbon nanotubules are studied by means of diffraction contrast dark field images. This results in an electron microscopy method for the determination of the sign of the chiral angles in carbon nanotubes. The method is justified by a reasoning either in direct space or in diffraction space. We also investigate a carbon nanotubule exhibiting a bend and we confront the observations with the heptagon-pentagon pair model.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	London	Editor
	Language		Wos	A1996VG17300010	Publication Date	2007-07-08
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0141-8610;1460-6992;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	20	Open Access
	Notes				Approved	PHYSICS, APPLIED 47/145 Q2 #
	Call Number	UA @ lucian @ c:irua:15456			Serial	359
Permanent link to this record



	Author	Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
	Title	Clustering of vacancies on {113} planes in Si layers close to Si-Si₃N₄ interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation			Type	A1 Journal article
	Year	1999	Publication	Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND	Abbreviated Journal	Inst Phys Conf Ser
	Volume		Issue	164	Pages	495-498
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000166835300106	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-7503-0650-5; 0951-3248	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:102918			Serial	376
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	Author	Nistor, L.C.; van Landuyt, J.; Barton, J.D.; Hole, D.E.; Skelland, N.D.; Townsend, P.D.
	Title	Colloid size distributions in ion implanted glass			Type	A1 Journal article
	Year	1993	Publication	Journal of non-crystalline solids	Abbreviated Journal	J Non-Cryst Solids
	Volume	162	Issue		Pages	217-224
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1993LY37100002	Publication Date	2003-06-21
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-3093;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.766	Times cited	63	Open Access
	Notes				Approved	INSTRUMENTS & INSTRUMENTATION 31/56 Q3 # NUCLEAR SCIENCE & TECHNOLOGY 9/32 Q2 # PHYSICS, PARTICLES & FIELDS 24/28 Q4 # SPECTROSCOPY 28/43 Q3 #
	Call Number	UA @ lucian @ c:irua:6787			Serial	389
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	Author	Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R.
	Title	A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals			Type	A1 Journal article
	Year	1996	Publication	The journal of imaging science and technology	Abbreviated Journal	J Imaging Sci Techn
	Volume	40	Issue		Pages	189-201
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Springfield, Va	Editor
	Language		Wos	A1996VL09200003	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1062-3701	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	0.349	Times cited	4	Open Access
	Notes				Approved	MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 #
	Call Number	UA @ lucian @ c:irua:15428			Serial	418
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	Author	Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al.
	Title	Comparative study of structural properties and photoluminescence in InGaN layers with a high In content			Type	A1 Journal article
	Year	2000	Publication	Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS	Abbreviated Journal	Mrs Internet J N S R
	Volume	5	Issue	s:[1]	Pages	art. no.-W11.38
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
	Address
	Corporate Author				Thesis
	Publisher	Materials research society	Place of Publication	Warrendale	Editor
	Language		Wos	000090103600097	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1092-5783	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:103471			Serial	423
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	Author	Chen, J.H.; van Dyck, D.; op de Beeck, M.; van Landuyt, J.
	Title	Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging			Type	A1 Journal article
	Year	1997	Publication	Ultramicroscopy	Abbreviated Journal	Ultramicroscopy
	Volume	69	Issue		Pages	219-240
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1997YG59500001	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0304-3991	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.843	Times cited	11	Open Access
	Notes				Approved	Most recent IF: 2.843; 1997 IF: 1.600
	Call Number	UA @ lucian @ c:irua:21416			Serial	455
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	Author	Amelinckx, S.; Luyten, W.; Krekels, T.; Van Tendeloo, G.; van Landuyt, J.
	Title	Conical, helically woud, graphite whiskers: a limliting member of the “fullerenes”?			Type	A1 Journal article
	Year	1992	Publication	Journal of crystal growth	Abbreviated Journal	J Cryst Growth
	Volume	121	Issue		Pages	543-558
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	A1992JK56000001	Publication Date	2002-10-16
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0022-0248;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.698	Times cited	43	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:4103			Serial	492
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	Author	Schryvers, D.; Goessens, C.; van Renterghem, W.; van Landuyt, J.; de Keyzer, R.
	Title	Conventional and HREM study of structural defects in nanostructured silver halides			Type	P3 Proceeding
	Year	1998	Publication		Abbreviated Journal
	Volume		Issue		Pages	1-6
	Keywords	P3 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Antwerpen	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29681			Serial	509
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	Author	Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A.
	Title	Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition			Type	A1 Journal article
	Year	1999	Publication	Journal of vacuum science and technology: A: vacuum surfaces and films	Abbreviated Journal	J Vac Sci Technol A
	Volume	17	Issue	1	Pages	249-255
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	New York, N.Y.	Editor
	Language		Wos	000078136300038	Publication Date	2002-07-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0734-2101;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.374	Times cited	8	Open Access
	Notes				Approved	Most recent IF: 1.374; 1999 IF: 1.742
	Call Number	UA @ lucian @ c:irua:29689			Serial	581
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	Author	van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W.
	Title	Crystallography of fullerites and related graphene textures			Type	A1 Journal article
	Year	1994	Publication	Materials science forum	Abbreviated Journal
	Volume	150/151	Issue		Pages	53-64
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Lausanne	Editor
	Language		Wos	A1994BC12F00004	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0255-5476; 1662-9752	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:10001			Serial	590
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	Author	Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O.
	Title	Defect characterization in high temperature implanted 6H-SiC using TEM			Type	A1 Journal article
	Year	1997	Publication	Nuclear instruments and methods in physics research: B	Abbreviated Journal	Nucl Instrum Meth B
	Volume	127/128	Issue		Pages	347-349
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	A1997XG60500078	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0168-583X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.109	Times cited	17	Open Access
	Notes				Approved	Most recent IF: 1.109; 1997 IF: 1.016
	Call Number	UA @ lucian @ c:irua:21411			Serial	613
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	Author	Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B.
	Title	Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study			Type	P1 Proceeding
	Year	2000	Publication		Abbreviated Journal
	Volume		Issue		Pages	38-43
	Keywords	P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Defects in AgG tabular crystals with {111} surfaces are characterised by transmission electron microscopy (TEM) and their influence on the growth process is discussed. In the tabular crystals, twins parallel to the tabular face as well as dislocations along different directions are observed. The twins induce the tabular growth, while the dislocations do not influence the morphology. In 10 to 30% of the crystals that have been characterised, thickness growth is observed and it is shown that in all cases twins on other planes than the tabular ones are present. Two configurations occur more frequently and are analysed in detail. For the first group, twins parallel to the tabular face as well as a microtwin along a non-parallel {111} plane and ending inside the crystal are present. In the crystals of the second group only one extra non-parallel twin occurs giving rise to a bicrystal built up by a tetrahedral shaped part and a flat triangular or trapezoidal part. More complex twin configurations give rise to various, less characteristic morphologies.
	Address
	Corporate Author				Thesis
	Publisher	Soc imaging science technology	Place of Publication	Springfield	Editor
	Language		Wos	000183315900012	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-89208-229-1	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95777			Serial	617
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	Author	van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.
	Title	Defect related growth of tabular AgCl(100) crystals: a TEM study			Type	P1 Proceeding
	Year	1998	Publication		Abbreviated Journal
	Volume		Issue		Pages	389-390
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Cancun	Editor
	Language		Wos	000077019900191	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29678			Serial	618
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