|  | Author | Title | Year  | Publication | Volume | Times cited | Additional Links | Links | 
	|  | Bizindavyi, J.; Verhulst, A.S.; Verreck, D.; Sorée, B.; Groeseneken, G. | Large variation in temperature dependence of band-to-band tunneling current in tunnel devices | 2019 | IEEE electron device letters | 40 |  | UA library record; WoS full record; WoS citing articles |     | 
	|  | Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.L.; Magnus, W.; Sorée, B.; Groeseneken, G. | Phonon-assisted tunneling in direct-bandgap semiconductors | 2019 | Journal of applied physics | 125 | 2 | UA library record; WoS full record; WoS citing articles |     | 
	|  | Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. | Self-consistent procedure including envelope function normalization for full-zone Schrodinger-Poisson problems with transmitting boundary conditions | 2018 | Journal of applied physics | 124 | 1 | UA library record; WoS full record; WoS citing articles |     | 
	|  | Bizindavyi, J.; Verhulst, A.S.; Smets, Q.; Verreck, D.; Sorée, B.; Groeseneken, G. | Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes | 2018 | IEEE journal of the Electron Devices Society | 6 | 5 | UA library record; WoS full record; WoS citing articles |     | 
	|  | Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. | Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors | 2017 | Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017) |  |  | UA library record; WoS full record |   | 
	|  | Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. | Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides | 2016 | Journal of applied physics | 120 | 6 | UA library record; WoS full record; WoS citing articles |     | 
	|  | Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. | Uniform strain in heterostructure tunnel field-effect transistors | 2016 | IEEE electron device letters | 37 | 17 | UA library record; WoS full record; WoS citing articles |       | 
	|  | Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. | Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors | 2016 | Solid-State Device Research (ESSDERC), European Conference
T2 – 46th European Solid-State Device Research Conference (ESSDERC) / 42nd, European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND |  |  | UA library record; WoS full record |  | 
	|  | Verreck, D.; Van de Put, M.L.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Dabral, A.; Thean, A.; Groeseneken, G. | 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors | 2015 | 18th International Workshop On Computational Electronics (iwce 2015) |  |  | UA library record; WoS full record |     | 
	|  | Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. | Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors | 2015 | Journal of applied physics | 118 | 9 | UA library record; WoS full record; WoS citing articles |   | 
	|  | Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. | Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic | 2014 | Applied physics letters | 105 | 10 | UA library record; WoS full record; WoS citing articles |   | 
	|  | Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. | Can p-channel tunnel field-effect transistors perform as good as n-channel? | 2014 | Applied physics letters | 105 | 8 | UA library record; WoS full record; WoS citing articles |     | 
	|  | Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; | InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models | 2014 | Journal of applied physics | 115 | 34 | UA library record; WoS full record; WoS citing articles |   | 
	|  | Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. | Quantum mechanical solver for confined heterostructure tunnel field-effect transistors | 2014 | Journal of applied physics | 115 | 15 | UA library record; WoS full record; WoS citing articles |   | 
	|  | Verhulst, A.S.; Verreck, D.; Smets, Q.; Kao, K.-H.; Van de Put, M.; Rooyackers, R.; Sorée, B.; Vandooren, A.; De Meyer, K.; Groeseneken, G.; Heyns, M.M.; Mocuta, A.; Collaert, N.; Thean, A.V.-Y. | Perspective of tunnel-FET for future low-power technology nodes | 2014 | 2014 Ieee International Electron Devices Meeting (iedm) |  |  | UA library record; WoS full record |  |