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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Vandenberghe, W.G. Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation 2021 Communications Physics 4 UA library record; WoS full record; WoS citing articles url doi
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. Signature of ballistic band-tail tunneling current in tunnel FET 2020 Ieee Transactions On Electron Devices 67 UA library record; WoS full record; WoS citing articles pdf doi
Bizindavyi, J.; Verhulst, A.S.; Verreck, D.; Sorée, B.; Groeseneken, G. Large variation in temperature dependence of band-to-band tunneling current in tunnel devices 2019 IEEE electron device letters 40 UA library record; WoS full record; WoS citing articles pdf doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.L.; Magnus, W.; Sorée, B.; Groeseneken, G. Phonon-assisted tunneling in direct-bandgap semiconductors 2019 Journal of applied physics 125 2 UA library record; WoS full record; WoS citing articles pdf doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. Self-consistent procedure including envelope function normalization for full-zone Schrodinger-Poisson problems with transmitting boundary conditions 2018 Journal of applied physics 124 1 UA library record; WoS full record; WoS citing articles pdf doi
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs 2018 Conference digest T2 – 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA UA library record; WoS full record doi
Bizindavyi, J.; Verhulst, A.S.; Smets, Q.; Verreck, D.; Sorée, B.; Groeseneken, G. Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes 2018 IEEE journal of the Electron Devices Society 6 5 UA library record; WoS full record; WoS citing articles url doi
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs 2018 Conference digest T2 – 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA UA library record; WoS full record
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors 2017 Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017) UA library record; WoS full record pdf
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides 2016 Journal of applied physics 120 6 UA library record; WoS full record; WoS citing articles url doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Uniform strain in heterostructure tunnel field-effect transistors 2016 IEEE electron device letters 37 17 UA library record; WoS full record; WoS citing articles pdf url doi
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors 2016 Solid-State Device Research (ESSDERC), European Conference T2 – 46th European Solid-State Device Research Conference (ESSDERC) / 42nd, European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND UA library record; WoS full record
Verreck, D.; Van de Put, M.L.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Dabral, A.; Thean, A.; Groeseneken, G. 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record url doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors 2015 Journal of applied physics 118 9 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic 2014 Applied physics letters 105 10 UA library record; WoS full record; WoS citing articles doi
Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. Can p-channel tunnel field-effect transistors perform as good as n-channel? 2014 Applied physics letters 105 8 UA library record; WoS full record; WoS citing articles url doi
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models 2014 Journal of applied physics 115 34 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors 2014 Journal of applied physics 115 15 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation 2014 Journal of applied physics 115 26 UA library record; WoS full record; WoS citing articles doi
Verhulst, A.S.; Verreck, D.; Smets, Q.; Kao, K.-H.; Van de Put, M.; Rooyackers, R.; Sorée, B.; Vandooren, A.; De Meyer, K.; Groeseneken, G.; Heyns, M.M.; Mocuta, A.; Collaert, N.; Thean, A.V.-Y. Perspective of tunnel-FET for future low-power technology nodes 2014 2014 Ieee International Electron Devices Meeting (iedm) UA library record; WoS full record
Clima, S.; Kaczer, B.; Govoreanu, B.; Popovici, M.; Swerts, J.; Verhulst, A.S.; Jurczak, M.; De Gendt, S.; Pourtois, G. Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations 2013 IEEE electron device letters 34 3 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. Figure of merit for and identification of sub-60 mV/decade devices 2013 Applied physics letters 102 64 UA library record; WoS full record; WoS citing articles pdf doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. Optimization of gate-on-source-only tunnel FETs with counter-doped pockets 2012 IEEE transactions on electron devices 59 72 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors 2012 Applied physics letters 100 25 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. Modeling the impact of junction angles in tunnel field-effect transistors 2012 Solid state electronics 69 9 UA library record; WoS full record; WoS citing articles pdf doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. Direct and indirect band-to-band tunneling in germanium-based TFETs 2012 IEEE transactions on electron devices 59 212 UA library record; WoS full record; WoS citing articles doi
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