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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy |
2004 |
Journal of the electrochemical society |
151 |
13 |
UA library record; WoS full record; WoS citing articles |
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de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon |
2003 |
Physica: B : condensed matter
T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK |
340 |
4 |
UA library record; WoS full record; WoS citing articles |
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Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. |
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques |
2002 |
Journal of applied physics |
91 |
27 |
UA library record; WoS full record; WoS citing articles |
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De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy |
2002 |
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UA library record; WoS full record; |
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de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. |
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM |
2001 |
Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY |
308 |
3 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM |
1999 |
Physica status solidi: A: applied research
T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
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de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon |
1999 |
The review of scientific instruments |
70 |
5 |
UA library record; WoS full record; WoS citing articles |
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De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers |
1999 |
Microelectronic engineering |
45 |
|
UA library record; WoS full record |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
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UA library record; WoS full record; |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM |
1999 |
Physica status solidi: A: applied research |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope |
1998 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
77 |
23 |
UA library record; WoS full record; WoS citing articles |
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Vanhellemont, J.; Bender, H.; van Landuyt, J. |
TEM studies of processed Si device materials |
1997 |
Conference series of the Institute of Physics |
157 |
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UA library record; WoS full record; |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation |
1997 |
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UA library record |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
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Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. |
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope |
1996 |
Nuclear instruments and methods in physics research |
B112 |
4 |
UA library record; WoS full record; WoS citing articles |
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Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. |
Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope |
1996 |
Materials Research Society symposium proceedings |
404 |
1 |
UA library record; WoS full record; WoS citing articles |
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Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope |
1995 |
Materials science and technology |
11 |
7 |
UA library record; WoS full record; WoS citing articles |
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Vanhellemont, J.; Claeys, C.; van Landuyt, J. |
In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces |
1995 |
Physica status solidi: A: applied research |
150 |
6 |
UA library record; WoS full record; WoS citing articles |
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Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope |
1995 |
Materials science and technology |
11 |
7 |
UA library record; WoS full record; WoS citing articles |
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van Landuyt, J.; Vanhellemont, J. |
High-resolution electron microscopy for semiconducting materials science |
1994 |
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UA library record |
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Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; |
Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry |
1993 |
Applied surface science
T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE |
63 |
13 |
UA library record; WoS full record; WoS citing articles |
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Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. |
Defects in high-dose oxygen implanted silicon : a TEM study |
1991 |
Vacuum: the international journal and abstracting service for vacuum science and technology
T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND |
42 |
4 |
UA library record; WoS full record; WoS citing articles |
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