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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Devolder, T.; Bultynck, O.; Bouquin, P.; Nguyen, V.D.; Rao, S.; Wan, D.; Sorée, B.; Radu, I.P.; Kar, G.S.; Couet, S. |
Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions |
2020 |
Physical Review B |
102 |
|
UA library record; WoS full record; WoS citing articles |
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Duflou, R.; Ciubotaru, F.; Vaysset, A.; Heyns, M.; Sorée, B.; Radu, I.P.; Adelmann, C. |
Micromagnetic simulations of magnetoelastic spin wave excitation in scaled magnetic waveguides |
2017 |
Applied physics letters |
111 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Zografos, O.; Manfrini, M.; Vaysset, A.; Sorée, B.; Ciubotaru, F.; Adelmann, C.; Lauwereins, R.; Raghavan, P.; Radu, I.P. |
Exchange-driven magnetic logic |
2017 |
Scientific reports |
7 |
7 |
UA library record; WoS full record; WoS citing articles |
|
|
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Lu, A.K.A.; Houssa, M.; Radu, I.P.; Pourtois, G. |
Toward an understanding of the electric field-induced electrostatic doping in van der Waals heterostructures : a first-principles study |
2017 |
ACS applied materials and interfaces |
9 |
10 |
UA library record; WoS full record; WoS citing articles |
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Zografos, O.; Dutta, S.; Manfrini, M.; Vaysset, A.; Sorée, B.; Naeemi, A.; Raghavan, P.; Lauwereins, R.; Radu, I.P. |
Non-volatile spin wave majority gate at the nanoscale |
2017 |
AIP advances
T2 – 61st Annual Conference on Magnetism and Magnetic Materials (MMM), OCT 31-NOV 04, 2016, New Orleans, LA |
7 |
13 |
UA library record; WoS full record; WoS citing articles |
|
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Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M. |
On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study |
2017 |
Journal of applied physics |
121 |
|
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. |
Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study |
2016 |
Applied physics letters |
108 |
4 |
UA library record; WoS full record; WoS citing articles |
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Heyne, M.H.; Chiappe, D.; Meersschaut, J.; Nuytten, T.; Conard, T.; Bender, H.; Huyghebaert, C.; Radu, I.P.; Caymax, M.; de Marneffe, J.F.; Neyts, E.C.; De Gendt, S.; |
Multilayer MoS2 growth by metal and metal oxide sulfurization |
2016 |
Journal of materials chemistry C : materials for optical and electronic devices |
4 |
|
UA library record; WoS full record; WoS citing articles |
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