Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Chen, J.H.; van Dyck, D.; op de Beeck, M.; van Landuyt, J. |
Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging |
1997 |
Ultramicroscopy |
69 |
11 |
UA library record; WoS full record; WoS citing articles |
Volkov, V.V.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Busheva, E.E.; Shabunina, G.G.; Aminov, T.G.; Novotortsev, V.M. |
HREM image analysis up to structure determination of SbCrSe3: a new 1D ferromagnet |
1997 |
Journal of solid state chemistry |
132 |
1 |
UA library record; WoS full record; WoS citing articles |
Volkov, V.V.; van Landuyt, J.; Marushkin, K.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas |
1997 |
Sensors and actuators : A : physical |
62 |
3 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. |
The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study |
1997 |
Journal of crystal growth |
181 |
9 |
UA library record; WoS full record; WoS citing articles |
Nistor, L.C.; van Landuyt, J. |
Structural studies of diamond thin films grown from the arc plasma |
1998 |
Journal of materials research |
12 |
13 |
UA library record; WoS full record; WoS citing articles |
Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. |
Microstructure of Mn-doped, spin-cast FeSi2 |
1997 |
Journal of electron microscopy |
46 |
3 |
UA library record; WoS full record; WoS citing articles |
Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. |
Defect characterization in high temperature implanted 6H-SiC using TEM |
1997 |
Nuclear instruments and methods in physics research: B |
127/128 |
17 |
UA library record; WoS full record; WoS citing articles |
Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas |
1997 |
Journal of crystal growth |
173 |
4 |
UA library record; WoS full record; WoS citing articles |
Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Smolin, A.A. |
Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization |
1997 |
Diamond and related materials |
6 |
116 |
UA library record; WoS full record; WoS citing articles |
Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1 |
1997 |
Journal of crystal growth |
172 |
23 |
UA library record; WoS full record; WoS citing articles |
Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. |
Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals |
1997 |
Journal of crystal growth |
172 |
15 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. |
Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction |
1997 |
Journal of crystal growth |
172 |
29 |
UA library record; WoS full record; WoS citing articles |
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. |
High resolution TEM observation of in situ colloid formation in CaF2 crystals |
1997 |
Materials science forum |
239-241 |
3 |
UA library record; WoS full record; WoS citing articles |
Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Korothushenko, K.G.; Smolin, A.A. |
Structural studies of nanocrystalline diamond thin films |
1997 |
Materials science forum |
239-241 |
|
UA library record; WoS full record; |
Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. |
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France |
120 |
2 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. |
New erbium silicide superstructures: a study by high resolution electron microscopy |
1996 |
Physica status solidi: A: applied research |
158 |
6 |
UA library record; WoS full record; WoS citing articles |
Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals |
1996 |
The journal of imaging science and technology |
40 |
4 |
UA library record; WoS full record; WoS citing articles |
Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. |
Photoelectric and electrical responses of several erbium silicide/silicon interfaces |
1996 |
Applied surface science
T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE |
102 |
3 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. |
Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate |
1996 |
Applied surface science |
102 |
9 |
UA library record; WoS full record; WoS citing articles |
Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.; Frangis, N.; van Landuyt, J. |
High crystalline quality erbium silicide films on (100) silicon grown in high vacuum |
1996 |
Applied surface science |
102 |
14 |
UA library record; WoS full record; WoS citing articles |
Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G. |
The chirality of carbon nanotubules determined by dark-field electron microscopy |
1996 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
74 |
20 |
UA library record; WoS full record; WoS citing articles |
Teodorescu, V.S.; Mihailescu, I.N.; Gyorgy, E.; Luches, A.; Martino, M.; Nistor, L.C.; van Landuyt, J.; Hermann, J. |
The study of a crater forming on the surface of a Ti target submitted to multipulse excimer laser irradiation under low pressure N2 |
1996 |
Journal of modern optics |
43 |
11 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr |
112 |
9 |
UA library record; WoS full record; WoS citing articles |
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. |
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope |
1996 |
Nuclear instruments and methods in physics research |
B112 |
4 |
UA library record; WoS full record; WoS citing articles |
Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.; Briers, J.; Bao, Y.; Geise, H.J. |
An electron microscopic study of highly oriented undoped and FeCl3-doped poly (p-phenylenevinylene) |
1996 |
Macromolecules |
29 |
10 |
UA library record; WoS full record; WoS citing articles |
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. |
Structural characterisation of erbium silicide thin films of an Si(111) substrate |
1996 |
Journal of alloys and compounds |
234 |
14 |
UA library record; WoS full record; WoS citing articles |
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. |
Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope |
1996 |
Materials Research Society symposium proceedings |
404 |
1 |
UA library record; WoS full record; WoS citing articles |
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. |
On the interpretation of HREM images of partially ordered alloys |
1995 |
Ultramicroscopy |
60 |
20 |
UA library record; WoS full record; WoS citing articles |
Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope |
1995 |
Materials science and technology |
11 |
7 |
UA library record; WoS full record; WoS citing articles |
Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope |
1995 |
Materials science and technology |
11 |
7 |
UA library record; WoS full record; WoS citing articles |