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Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. pdf  doi
openurl 
  Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
  Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond  
  Volume 11 Issue 11 Pages 1194-1202  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.  
  Address  
  Corporate Author Thesis  
  Publisher Inst Materials Place of Publication London Editor  
  Language Wos (up) A1995TQ95100016 Publication Date 2014-01-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.995 Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95911 Serial 2654  
Permanent link to this record
 

 
Author Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. openurl 
  Title Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope Type A3 Journal article
  Year 1995 Publication Materials science and technology Abbreviated Journal  
  Volume 11 Issue Pages 1194-1204  
  Keywords A3 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos (up) A1995TQ95100016 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13297 Serial 2655  
Permanent link to this record
 

 
Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. pdf  doi
openurl 
  Title On the interpretation of HREM images of partially ordered alloys Type A1 Journal article
  Year 1995 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 60 Issue 2 Pages 265-282  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1995TZ14700008 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.436 Times cited 20 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13014 Serial 2438  
Permanent link to this record
 

 
Author Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. openurl 
  Title Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope Type P1 Proceeding
  Year 1996 Publication Materials Research Society symposium proceedings Abbreviated Journal  
  Volume 404 Issue Pages 189-194  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Wuhan Editor  
  Language Wos (up) A1996BG19E00025 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0272-9172 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 1 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15457 Serial 2424  
Permanent link to this record
 

 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. pdf  doi
openurl 
  Title Structural characterisation of erbium silicide thin films of an Si(111) substrate Type A1 Journal article
  Year 1996 Publication Journal of alloys and compounds Abbreviated Journal J Alloy Compd  
  Volume 234 Issue 2 Pages 244-250  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1996TX65100020 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-8388; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.999 Times cited 14 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:15451 Serial 3213  
Permanent link to this record
 

 
Author Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D.; Briers, J.; Bao, Y.; Geise, H.J. pdf  doi
openurl 
  Title An electron microscopic study of highly oriented undoped and FeCl3-doped poly (p-phenylenevinylene) Type A1 Journal article
  Year 1996 Publication Macromolecules Abbreviated Journal Macromolecules  
  Volume 29 Issue 5 Pages 1554-1561  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language Wos (up) A1996TY13900024 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0024-9297;1520-5835; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 5.8 Times cited 10 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15452 Serial 939  
Permanent link to this record
 

 
Author Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. doi  openurl
  Title Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope Type A1 Journal article
  Year 1996 Publication Nuclear instruments and methods in physics research Abbreviated Journal Nucl Instrum Meth B  
  Volume B112 Issue Pages 133-138  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1996UW20100029 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 4 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15453 Serial 2423  
Permanent link to this record
 

 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. doi  openurl
  Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type A1 Journal article
  Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B  
  Volume 112 Issue 1-4 Pages 325-329  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos (up) A1996UW20100069 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95886 Serial 1742  
Permanent link to this record
 

 
Author Teodorescu, V.S.; Mihailescu, I.N.; Gyorgy, E.; Luches, A.; Martino, M.; Nistor, L.C.; van Landuyt, J.; Hermann, J. doi  openurl
  Title The study of a crater forming on the surface of a Ti target submitted to multipulse excimer laser irradiation under low pressure N2 Type A1 Journal article
  Year 1996 Publication Journal of modern optics Abbreviated Journal J Mod Optic  
  Volume 43 Issue 9 Pages 1773-1784  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A Ti target was submitted to laser ablation in low ambient pressure N-2. Electron microscopy examination of the cross-section of the crater zone forming on the Ti target, and XPS analyses, indicate that there is a small effect on the nitridation processes taking place on and in the vicinity of the target. The studies show a zone influenced by the multipulse laser treatment extending beneath the crater down to a depth of the same order of magnitude as the crater depth (i.e. similar to 10 mu m). In this zone, TiN could be identified as being present only in traces, while the whole zone exhibited a layer structure with differences in morphology and mechanical wear.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos (up) A1996VF31900002 Publication Date 2007-07-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0950-0340;1362-3044; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.008 Times cited 11 Open Access  
  Notes Approved PHYSICS, APPLIED 47/145 Q2 #  
  Call Number UA @ lucian @ c:irua:95238 Serial 3594  
Permanent link to this record
 

 
Author Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G. pdf  doi
openurl 
  Title The chirality of carbon nanotubules determined by dark-field electron microscopy Type A1 Journal article
  Year 1996 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal  
  Volume 74 Issue 3 Pages 723-740  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Multishell carbon nanotubules are studied by means of diffraction contrast dark field images. This results in an electron microscopy method for the determination of the sign of the chiral angles in carbon nanotubes. The method is justified by a reasoning either in direct space or in diffraction space. We also investigate a carbon nanotubule exhibiting a bend and we confront the observations with the heptagon-pentagon pair model.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos (up) A1996VG17300010 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-8610;1460-6992; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 20 Open Access  
  Notes Approved PHYSICS, APPLIED 47/145 Q2 #  
  Call Number UA @ lucian @ c:irua:15456 Serial 359  
Permanent link to this record
 

 
Author Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G.; Frangis, N.; van Landuyt, J. doi  openurl
  Title High crystalline quality erbium silicide films on (100) silicon grown in high vacuum Type A1 Journal article
  Year 1996 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 102 Issue Pages 151-155  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1996VJ86100034 Publication Date 2003-05-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 14 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15459 Serial 1423  
Permanent link to this record
 

 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. doi  openurl
  Title Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate Type A1 Journal article
  Year 1996 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 102 Issue Pages 163-168  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1996VJ86100037 Publication Date 2003-05-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15458 Serial 953  
Permanent link to this record
 

 
Author Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. pdf  doi
openurl 
  Title Photoelectric and electrical responses of several erbium silicide/silicon interfaces Type A1 Journal article
  Year 1996 Publication Applied surface science T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE Abbreviated Journal Appl Surf Sci  
  Volume 102 Issue Pages 173-177  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1996VJ86100039 Publication Date 2003-05-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 3 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:104392 Serial 2611  
Permanent link to this record
 

 
Author Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. openurl 
  Title A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals Type A1 Journal article
  Year 1996 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn  
  Volume 40 Issue Pages 189-201  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Springfield, Va Editor  
  Language Wos (up) A1996VL09200003 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.349 Times cited 4 Open Access  
  Notes Approved MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 #  
  Call Number UA @ lucian @ c:irua:15428 Serial 418  
Permanent link to this record
 

 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. openurl 
  Title New erbium silicide superstructures: a study by high resolution electron microscopy Type A1 Journal article
  Year 1996 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 158 Issue Pages 107-116  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos (up) A1996VY72800013 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 6 Open Access  
  Notes Approved PHYSICS, APPLIED 28/145 Q1 #  
  Call Number UA @ lucian @ c:irua:15460 Serial 2313  
Permanent link to this record
 

 
Author Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. doi  openurl
  Title Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ Type A1 Journal article
  Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France Abbreviated Journal Nucl Instrum Meth B  
  Volume 120 Issue 1-4 Pages 186-189  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Amsterdam Editor  
  Language Wos (up) A1996VZ24500040 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 2 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95882 Serial 947  
Permanent link to this record
 

 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Korothushenko, K.G.; Smolin, A.A. openurl 
  Title Structural studies of nanocrystalline diamond thin films Type A1 Journal article
  Year 1997 Publication Materials science forum Abbreviated Journal  
  Volume 239-241 Issue Pages 115-118  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos (up) A1997BH33W00026 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21403 Serial 3260  
Permanent link to this record
 

 
Author Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. openurl 
  Title High resolution TEM observation of in situ colloid formation in CaF2 crystals Type A1 Journal article
  Year 1997 Publication Materials science forum Abbreviated Journal  
  Volume 239-241 Issue Pages 671-674  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos (up) A1997BH33W00145 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0255-5476; 1662-9752 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 3 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21404 Serial 1460  
Permanent link to this record
 

 
Author Frangis, N.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. openurl 
  Title Growth of erbium-silicide films on (100) silicon as characterised by electron microscopy and diffraction Type A1 Journal article
  Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 172 Issue Pages 175-182  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1997WL48900024 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 29 Open Access  
  Notes Approved Most recent IF: 1.751; 1997 IF: 1.259  
  Call Number UA @ lucian @ c:irua:21402 Serial 1394  
Permanent link to this record
 

 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. openurl 
  Title Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals Type A1 Journal article
  Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 172 Issue Pages 426-432  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1997WL65300018 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 15 Open Access  
  Notes Approved Most recent IF: 1.751; 1997 IF: 1.259  
  Call Number UA @ lucian @ c:irua:21345 Serial 942  
Permanent link to this record
 

 
Author Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. openurl 
  Title Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1 Type A1 Journal article
  Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 172 Issue Pages 433-439  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1997WL65300019 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 23 Open Access  
  Notes Approved Most recent IF: 1.751; 1997 IF: 1.259  
  Call Number UA @ lucian @ c:irua:21405 Serial 2051  
Permanent link to this record
 

 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Smolin, A.A. openurl 
  Title Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization Type A1 Journal article
  Year 1997 Publication Diamond and related materials Abbreviated Journal Diam Relat Mater  
  Volume 6 Issue Pages 159-168  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1997WN37300021 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-9635 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.561 Times cited 116 Open Access  
  Notes Approved Most recent IF: 2.561; 1997 IF: 1.758  
  Call Number UA @ lucian @ c:irua:21406 Serial 2249  
Permanent link to this record
 

 
Author Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. openurl 
  Title Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas Type A1 Journal article
  Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 173 Issue Pages 285-296  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1997XC98100008 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.751; 1997 IF: 1.259  
  Call Number UA @ lucian @ c:irua:20459 Serial 324  
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Author Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. doi  openurl
  Title Defect characterization in high temperature implanted 6H-SiC using TEM Type A1 Journal article
  Year 1997 Publication Nuclear instruments and methods in physics research: B Abbreviated Journal Nucl Instrum Meth B  
  Volume 127/128 Issue Pages 347-349  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos (up) A1997XG60500078 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.109 Times cited 17 Open Access  
  Notes Approved Most recent IF: 1.109; 1997 IF: 1.016  
  Call Number UA @ lucian @ c:irua:21411 Serial 613  
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Author Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. openurl 
  Title Microstructure of Mn-doped, spin-cast FeSi2 Type A1 Journal article
  Year 1997 Publication Journal of electron microscopy Abbreviated Journal Microscopy-Jpn  
  Volume 46 Issue 3 Pages 221-225  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Tokyo Editor  
  Language Wos (up) A1997XP43400004 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0744; 1477-9986 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.9 Times cited 3 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21410 Serial 2070  
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Author Nistor, L.C.; van Landuyt, J. openurl 
  Title Structural studies of diamond thin films grown from the arc plasma Type A1 Journal article
  Year 1998 Publication Journal of materials research Abbreviated Journal J Mater Res  
  Volume 12 Issue 10 Pages 2533-2542  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos (up) A1997YD17000007 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0884-2914 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.673 Times cited 13 Open Access  
  Notes Approved Most recent IF: 1.673; 1998 IF: 1.539  
  Call Number UA @ lucian @ c:irua:29674 Serial 3259  
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Author Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. openurl 
  Title The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study Type A1 Journal article
  Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 181 Issue Pages 218-228  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1997YD52700007 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 9 Open Access  
  Notes Approved Most recent IF: 1.751; 1997 IF: 1.259  
  Call Number UA @ lucian @ c:irua:21415 Serial 1253  
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Author Volkov, V.V.; van Landuyt, J.; Marushkin, K.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. pdf  doi
openurl 
  Title LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas Type A1 Journal article
  Year 1997 Publication Sensors and actuators : A : physical Abbreviated Journal Sensor Actuat A-Phys  
  Volume 62 Issue 1/3 Pages 624-632  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Highly effective IR light-emitting diodes operating at the wavelength 1.66 mu m and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/ In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM),electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CK, gas sensor has been developed and fabricated an the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested, It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2 x 1 km. (C) 1997 Elsevier Science S.A.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos (up) A1997YD90600029 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0924-4247; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.499 Times cited 3 Open Access  
  Notes Approved Most recent IF: 2.499; 1997 IF: 0.635  
  Call Number UA @ lucian @ c:irua:20455 Serial 1855  
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Author Volkov, V.V.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Busheva, E.E.; Shabunina, G.G.; Aminov, T.G.; Novotortsev, V.M. openurl 
  Title HREM image analysis up to structure determination of SbCrSe3: a new 1D ferromagnet Type A1 Journal article
  Year 1997 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 132 Issue Pages 257-266  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos (up) A1997YE01700005 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.299 Times cited 1 Open Access  
  Notes Approved Most recent IF: 2.299; 1997 IF: 1.486  
  Call Number UA @ lucian @ c:irua:21421 Serial 1500  
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Author Chen, J.H.; van Dyck, D.; op de Beeck, M.; van Landuyt, J. openurl 
  Title Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging Type A1 Journal article
  Year 1997 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 69 Issue Pages 219-240  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos (up) A1997YG59500001 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 11 Open Access  
  Notes Approved Most recent IF: 2.843; 1997 IF: 1.600  
  Call Number UA @ lucian @ c:irua:21416 Serial 455  
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