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Author Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J.
Title Quantitative EFTEM study of germanium quantum dots Type P1 Proceeding
Year 2001 Publication Abbreviated Journal
Volume (up) Issue Pages 345-346
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Rinton Press Place of Publication Princeton Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1-58949-003-7 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95716 Serial 2753
Permanent link to this record
 
 
Author Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J.
Title Reliability of copper dual damascene influenced by pre-clean Type P1 Proceeding
Year 2002 Publication Analysis Of Integrated Circuits Abbreviated Journal
Volume (up) Issue Pages 118-123
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos 000177689400022 Publication Date 2003-06-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 5 Open Access
Notes Conference name: Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104170 Serial 2865
Permanent link to this record
 
 
Author Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P.
Title Stress analysis with convergent beam electron diffraction around NMOS transistors Type P1 Proceeding
Year 2001 Publication Abbreviated Journal
Volume (up) Issue Pages 359-360
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
Abstract
Address
Corporate Author Thesis
Publisher Princeton University Press Place of Publication Princeton, N.J. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1-58949-003-7 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95736 Serial 3176
Permanent link to this record
 
 
Author Bernaerts, D.; Amelinckx, S.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J.
Title Structural aspects of carbon nanotubes Type P3 Proceeding
Year 1995 Publication Abbreviated Journal
Volume (up) Issue Pages 551-555
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher World Scientific Place of Publication Singapore Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:13295 Serial 3206
Permanent link to this record
 
 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R.
Title A temperature study of mixed AgBr-AgBrI tabular crystals Type H1 Book chapter
Year 1995 Publication Abbreviated Journal
Volume (up) Issue Pages 70-76
Keywords H1 Book chapter; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Hawaii Editor
Language Wos A1995RY19900011 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume 39 Series Issue 1 Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 3 Open Access
Notes Approved PHYSICS, APPLIED 47/145 Q2 #
Call Number UA @ lucian @ c:irua:8459 Serial 3501
Permanent link to this record
 
 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R.
Title A temperature study of mixed AgBr-AgBrI tabular crystals Type P3 Proceeding
Year 1992 Publication Abbreviated Journal
Volume (up) Issue Pages 36-39
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Hawaii Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved PHYSICS, APPLIED 47/145 Q2 #
Call Number UA @ lucian @ c:irua:4201 Serial 3502
Permanent link to this record
 
 
Author Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C.
Title The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals Type P1 Proceeding
Year 2000 Publication Abbreviated Journal
Volume (up) Issue Pages 167-171
Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Multishell tabular grains have a higher speed than pure AgBr tabular grains. Usually the shells differ in size and iodide content, but also the precipitation method for the iodide containing shells has an influence on the iodide incorporation. A TEM investigation was performed to determine the defect structure of multishell AgBr (111) tabular crystals containing a shell with a low iodide concentration and one with a high iodide concentration. The twins that induce tabular growth and stacking fault contrast in the region of the iodide shells have been observed, similar to previously studied AgBr/Ag(Br,I) coreshell crystals. Moreover in some of the crystals dislocations have been observed, sometimes even an entire network. The number of dislocations formed varies for the different methods of iodide addition. Also variations in average thickness between the different iodide addition methods have been observed. A higher number of dislocations and thicker crystals point towards a higher local concentration of iodide. These observations allow deciding which iodide incorporation method is most useful for a preferred dislocation pattern.
Address
Corporate Author Thesis
Publisher Soc Imaging Science Technology Place of Publication Springfield Editor
Language Wos 000183315900046 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-89208-229-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95774 Serial 3587
Permanent link to this record
 
 
Author Van Tendeloo, G.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; Amelinckx, S.
Title Up close: Center for Electron Microscopy of Materials Science at the University of Antwerp Type A1 Journal article
Year 1994 Publication MRS bulletin Abbreviated Journal Mrs Bull
Volume (up) Issue Pages 57-59
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Pittsburgh, Pa Editor
Language Wos A1994PH66300015 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0883-7694 ISBN Additional Links UA library record; WoS full record;
Impact Factor 5.667 Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:9996 Serial 3821
Permanent link to this record
 
 
Author Schryvers, D.; Van Landuyt, J.
Title Electron microscopy study of twin sequences and branching in NissAl34 3R martensite Type A3 Journal Article
Year 1992 Publication ICOMAT Abbreviated Journal
Volume (up) Issue Pages
Keywords A3 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Abstract Microtwin sequences in Ni66Al34 martensite plates of different size were investigated by electron microscopy. Although mostly irregular sequences were observed an average twin width w can be determined which increases with twin length L following the expected relation w ~ sqrt(L). High resolution electron microscopy was used to study the twin branching close to the plate boundaries and an atomic model for the branching of a microtwin and the changes in twin thickness is suggested
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links
Impact Factor Times cited Open Access
Notes Approved no
Call Number EMAT @ emat @ Serial 5054
Permanent link to this record
 
 
Author Ahenach, J.; Cool, P.; Vansant, E.F.; Lebedev, O.; van Landuyt, J.
Title Influence of water on the pillaring of montmorillonite with aminopropyltriethoxysilane Type A1 Journal article
Year 1999 Publication Physical chemistry, chemical physics Abbreviated Journal Phys Chem Chem Phys
Volume (up) 1 Issue Pages 3703-3708
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge Editor
Language Wos 000081765300046 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1463-9076;1463-9084; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.123 Times cited 10 Open Access
Notes Approved Most recent IF: 4.123; 1999 IF: NA
Call Number UA @ lucian @ c:irua:28250 Serial 1660
Permanent link to this record
 
 
Author Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S.
Title Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy Type A1 Journal article
Year 2001 Publication Materials science in semiconductor processing Abbreviated Journal Mat Sci Semicon Proc
Volume (up) 4 Issue 1/3 Pages 109-111
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000167727200026 Publication Date 2002-10-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1369-8001; ISBN Additional Links UA library record; WoS full record
Impact Factor 2.359 Times cited Open Access
Notes Approved Most recent IF: 2.359; 2001 IF: 0.419
Call Number UA @ lucian @ c:irua:94967 Serial 343
Permanent link to this record
 
 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Kononenko, T.V.; Obraztsova, E.D.; Strelnitsky, V.E.
Title Formation of diamond nanocrystals in laser-irradiated amorphous carbon films Type P3 Proceeding
Year 1994 Publication International Conference on the New Diamond Science and Technology Abbreviated Journal
Volume (up) 4 Issue Pages 25-29
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10059 Serial 1259
Permanent link to this record
 
 
Author Teodorescu, V.S.; Mihailescu, I.N.; Dinescu, M.; Chitica, N.; Nistor, L.C.; van Landuyt, J.; Barborica, A.
Title Laser induced phase transition in iron thin films Type A1 Journal article
Year 1994 Publication Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation Abbreviated Journal
Volume (up) 4 Issue Pages 127-130
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Les Ulis Editor
Language Wos A1994NT08700028 Publication Date 2007-07-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10003 Serial 1787
Permanent link to this record
 
 
Author Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J.
Title The study of high Tc-superconducting materials by electron microscopy and electron diffraction Type A1 Journal article
Year 1991 Publication Superconductor science and technology T2 – SATELLITE CONF TO THE 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS : HIGH TEMPERATURE SUPERCONDUCTIVITY, AUG 13-15, 1990, QUEENS COLL, CAMBRIDGE, ENGLAND Abbreviated Journal Supercond Sci Tech
Volume (up) 4 Issue s:[1] Pages S19-S34
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract A survey is given of the application of different electron microscopic techniques to the study of structural features of high T(c)-superconducting materials. Emphasis is laid in this contribution on those structural aspects for the study of which electron microscopy has been essential or has contributed to a significant extent.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos A1991FA42000004 Publication Date 2002-08-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048;1361-6668; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.325 Times cited 2 Open Access
Notes Approved PHYSICS, APPLIED 47/145 Q2 #
Call Number UA @ lucian @ c:irua:104503 Serial 3596
Permanent link to this record
 
 
Author Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G.
Title The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures Type A1 Journal article
Year 2001 Publication Materials science in semiconductor processing Abbreviated Journal Mat Sci Semicon Proc
Volume (up) 4 Issue 1/3 Pages 117-119
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Oxford Editor
Language Wos 000167727200028 Publication Date 2002-10-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1369-8001; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.359 Times cited 6 Open Access
Notes Approved Most recent IF: 2.359; 2001 IF: 0.419
Call Number UA @ lucian @ c:irua:94968 Serial 3602
Permanent link to this record
 
 
Author Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al.
Title Comparative study of structural properties and photoluminescence in InGaN layers with a high In content Type A1 Journal article
Year 2000 Publication Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS Abbreviated Journal Mrs Internet J N S R
Volume (up) 5 Issue s:[1] Pages art. no.-W11.38
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
Address
Corporate Author Thesis
Publisher Materials research society Place of Publication Warrendale Editor
Language Wos 000090103600097 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1092-5783 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:103471 Serial 423
Permanent link to this record
 
 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Smolin, A.A.
Title Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization Type A1 Journal article
Year 1997 Publication Diamond and related materials Abbreviated Journal Diam Relat Mater
Volume (up) 6 Issue Pages 159-168
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos A1997WN37300021 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.561 Times cited 116 Open Access
Notes Approved Most recent IF: 2.561; 1997 IF: 1.758
Call Number UA @ lucian @ c:irua:21406 Serial 2249
Permanent link to this record
 
 
Author Nistor, L.; Nistor, S.V.; Dincã, G.; van Landuyt, J.; Schoemaker, D.; Copaciu, V.; Georgeoni, P.; Arnici, N.
Title High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis Type A1 Journal article
Year 1999 Publication Diamonds an related materials Abbreviated Journal Diam Relat Mater
Volume (up) 8 Issue Pages 738-742
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000080437000123 Publication Date 2002-07-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.561 Times cited 7 Open Access
Notes Approved Most recent IF: 2.561; 1999 IF: 1.924
Call Number UA @ lucian @ c:irua:27519 Serial 1445
Permanent link to this record
 
 
Author Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H.
Title Microstructural characterization of diamond films deposited on c-BN crystals Type A1 Journal article
Year 2000 Publication Diamond and related materials T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC Abbreviated Journal Diam Relat Mater
Volume (up) 9 Issue 3-6 Pages 269-273
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000087382400009 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.561 Times cited 9 Open Access
Notes Approved Most recent IF: 2.561; 2000 IF: 1.591
Call Number UA @ lucian @ c:irua:102877 Serial 2041
Permanent link to this record
 
 
Author Nistor, L.; Teodorescu, V.; Ghica, C.; van Landuyt, J.; Dinca, G.; Georgeoni, P.
Title The influence of the h-BN morphology and structure on the c-BN growth Type A1 Journal article
Year 2001 Publication Diamond and related materials T2 – 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL Abbreviated Journal Diam Relat Mater
Volume (up) 10 Issue 3-7 Pages 1352-1356
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher Place of Publication Amsterdam Editor
Language Wos 000168730600206 Publication Date 2002-10-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.561 Times cited 17 Open Access
Notes Approved Most recent IF: 2.561; 2001 IF: 1.902
Call Number UA @ lucian @ c:irua:103421 Serial 3586
Permanent link to this record
 
 
Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond
Volume (up) 11 Issue 11 Pages 1194-1202
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Address
Corporate Author Thesis
Publisher Inst Materials Place of Publication London Editor
Language Wos A1995TQ95100016 Publication Date 2014-01-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.995 Times cited 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95911 Serial 2654
Permanent link to this record
 
 
Author Vanhellemont, J.; Romano-Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
Title Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope Type A3 Journal article
Year 1995 Publication Materials science and technology Abbreviated Journal
Volume (up) 11 Issue Pages 1194-1204
Keywords A3 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1995TQ95100016 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13297 Serial 2655
Permanent link to this record
 
 
Author Nistor, L.C.; van Landuyt, J.
Title Structural studies of diamond thin films grown from the arc plasma Type A1 Journal article
Year 1998 Publication Journal of materials research Abbreviated Journal J Mater Res
Volume (up) 12 Issue 10 Pages 2533-2542
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos A1997YD17000007 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0884-2914 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.673 Times cited 13 Open Access
Notes Approved Most recent IF: 1.673; 1998 IF: 1.539
Call Number UA @ lucian @ c:irua:29674 Serial 3259
Permanent link to this record
 
 
Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.
Title Direct observation of clusters in some FCC alloys by HREM Type A1 Journal article
Year 1994 Publication Icem Abbreviated Journal
Volume (up) 13 Issue Pages 447-448
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1994BE09X00207 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10052 Serial 716
Permanent link to this record
 
 
Author Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R.
Title Electron diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals Type A1 Journal article
Year 1994 Publication Icem Abbreviated Journal
Volume (up) 13 Issue Pages
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1994BC23W00081 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10058 Serial 918
Permanent link to this record
 
 
Author Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.
Title EM study of sensitisation of silver halide grains Type A1 Journal article
Year 1994 Publication Icem Abbreviated Journal
Volume (up) 13 Issue Pages
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos A1994BE09Y00185 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 #
Call Number UA @ lucian @ c:irua:10607 Serial 1030
Permanent link to this record
 
 
Author Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Tanner, L.E.
Title HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys Type A3 Journal article
Year 1994 Publication Icem Abbreviated Journal
Volume (up) 13 Issue Pages 659-662
Keywords A3 Journal article; Electron microscopy for materials research (EMAT)
Abstract
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Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10051 Serial 1501
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Author Bernaerts, D.; Zhang, X.B.; Zhang, X.F.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.
Title HREM study of Rb6C60 and helical carbon nanotubules Type A3 Journal article
Year 1994 Publication Icem Abbreviated Journal
Volume (up) 13 Issue Pages 305-306
Keywords A3 Journal article; Electron microscopy for materials research (EMAT)
Abstract
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved COMPUTER SCIENCE, INTERDISCIPLINARY 11/104 Q1 # PHYSICS, MATHEMATICAL 1/53 Q1 #
Call Number UA @ lucian @ c:irua:10056 Serial 1514
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Author Nistor, L.C.; Nistor, S.V.; Dinca, G.; Georgeoni, P.; van Landuyt, J.; Manfredotti, C.; Vittone, E.
Title Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions Type A1 Journal article
Year 2002 Publication Journal of physics : condensed matter Abbreviated Journal J Phys-Condens Mat
Volume (up) 14 Issue 44 Pages 10983-10988
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp(3) bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 +/- 15 mJ m(-2) is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000179541700114 Publication Date 2002-10-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-8984; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.649 Times cited 7 Open Access
Notes Approved Most recent IF: 2.649; 2002 IF: 1.775
Call Number UA @ lucian @ c:irua:103328 Serial 2061
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Author Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O.
Title Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon Type A1 Journal article
Year 2002 Publication Journal of physics : condensed matter T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY Abbreviated Journal J Phys-Condens Mat
Volume (up) 14 Issue 48 Pages 13185-13193
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000180091100068 Publication Date 2002-11-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-8984; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.649 Times cited 3 Open Access
Notes Approved Most recent IF: 2.649; 2002 IF: 1.775
Call Number UA @ lucian @ c:irua:103326 Serial 2477
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