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“Atomic scale real-space mapping of holes in YBa2Cu3O6+δ”. N Gauquelin D G Hawthorn G A Sawatzky R X Liang D A Bonn W N Hardy &, GA Botton, Nature Communications 5, 4275 (2014). http://doi.org/10.1038/ncomms5275
Abstract: The high-temperature superconductor YBa2Cu3O6+δ consists of two main structural units—a bilayer of CuO2 planes that are central to superconductivity and a CuO2+δ chain layer. Although the functional role of the planes and chains has long been established, most probes integrate over both, which makes it difficult to distinguish the contribution of each. Here we use electron energy loss spectroscopy to directly resolve the plane and chain contributions to the electronic structure in YBa2Cu3O6 and YBa2Cu3O7. We directly probe the charge transfer of holes from the chains to the planes as a function of oxygen content, and show that the change in orbital occupation of Cu is large in the chain layer but modest in CuO2 planes, with holes in the planes doped primarily into the O 2p states. These results provide direct insight into the local electronic structure and charge transfers in this important high-temperature superconductor.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Times cited: 22
DOI: 10.1038/ncomms5275
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“Epitaxial stress-free growth of high crystallinity ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) substrate”. Li L, Liao Z, Gauquelin N, Minh Duc Nguyen, Hueting RJE, Gravesteijn DJ, Lobato I, Houwman EP, Lazar S, Verbeeck J, Koster G, Rijnders G, Advanced Materials Interfaces 5, 1700921 (2018). http://doi.org/10.1002/ADMI.201700921
Abstract: <script type='text/javascript'>document.write(unpmarked('Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead-zirconate-titanate (PbZrxTi1-xO3) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr1-xTix)O-3 on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr0.52Ti0.48)O-3 (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications.'));
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.279
Times cited: 15
DOI: 10.1002/ADMI.201700921
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“Vertically aligned diamond-graphite hybrid nanorod arrays with superior field electron emission properties”. Ramaneti R, Sankaran KJ, Korneychuk S, Yeh CJ, Degutis G, Leou KC, Verbeeck J, Van Bael MK, Lin IN, Haenen K, APL materials 5, 066102 (2017). http://doi.org/10.1063/1.4985107
Abstract: A “patterned-seeding technique” in combination with a “nanodiamond masked reactive ion etching process” is demonstrated for fabricating vertically aligned diamond-graphite hybrid (DGH) nanorod arrays. The DGH nanorod arrays possess superior field electron emission (FEE) behavior with a low turn-on field, long lifetime stability, and large field enhancement factor. Such an enhanced FEE is attributed to the nanocomposite nature of theDGHnanorods, which contain sp(2)-graphitic phases in the boundaries of nano-sized diamond grains. The simplicity in the nanorod fabrication process renders the DGH nanorods of greater potential for the applications as cathodes in field emission displays and microplasma display devices. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 4.335
Times cited: 16
DOI: 10.1063/1.4985107
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“Composite super-moiré, lattices in double-aligned graphene heterostructures = Composite super-moire lattices in double-aligned graphene heterostructures”. Wang Z, Wang YB, Yin J, Tovari E, Yang Y, Lin L, Holwill M, Birkbeck J, Perello DJ, Xu S, Zultak J, Gorbachev RV, Kretinin AV, Taniguchi T, Watanabe K, Morozov SV, Andelkovic M, Milovanović, SP, Covaci L, Peeters FM, Mishchenko A, Geim AK, Novoselov KS, Fal'ko VI, Knothe A, Woods CR, Science Advances 5, eaay8897 (2019). http://doi.org/10.1126/SCIADV.AAY8897
Abstract: When two-dimensional (2D) atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals may influence each other's properties. Of particular interest is when the two crystals closely match and a moire pattern forms, resulting in modified electronic and excitonic spectra, crystal reconstruction, and more. Thus, moire patterns are a viable tool for controlling the properties of 2D materials. However, the difference in periodicity of the two crystals limits the reconstruction and, thus, is a barrier to the low-energy regime. Here, we present a route to spectrum reconstruction at all energies. By using graphene which is aligned to two hexagonal boron nitride layers, one can make electrons scatter in the differential moire pattern which results in spectral changes at arbitrarily low energies. Further, we demonstrate that the strength of this potential relies crucially on the atomic reconstruction of graphene within the differential moire super cell.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Times cited: 71
DOI: 10.1126/SCIADV.AAY8897
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“Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers”. Marinov D, de Marneffe J-F, Smets Q, Arutchelvan G, Bal KM, Voronina E, Rakhimova T, Mankelevich Y, El Kazzi S, Nalin Mehta A, Wyndaele P-J, Heyne MH, Zhang J, With PC, Banerjee S, Neyts EC, Asselberghs I, Lin D, De Gendt S, npj 2D Materials and Applications 5, 17 (2021). http://doi.org/10.1038/s41699-020-00197-7
Abstract: The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of “monolayer” TMD materials. In this study, we report on the use of downstream H<sub>2</sub>plasma to clean the surface of monolayer WS<sub>2</sub>grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS<sub>2</sub>in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H<sub>2</sub>S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS<sub>2</sub>devices can be maintained by the combination of H<sub>2</sub>plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H<sub>2</sub>and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1038/s41699-020-00197-7
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“Optical versus electron diffraction imaging of Twist-angle in 2D transition metal dichalcogenide bilayers”. Psilodimitrakopoulos S, Orekhov A, Mouchliadis L, Jannis D, Maragkakis GM, Kourmoulakis G, Gauquelin N, Kioseoglou G, Verbeeck J, Stratakis E, npj 2D Materials and Applications 5, 77 (2021). http://doi.org/10.1038/S41699-021-00258-5
Abstract: Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between the two monolayers, coined as twist-angle, modifies the crystal symmetry and creates a superlattice with exciting properties. Here, we demonstrate an all-optical method for pixel-by-pixel mapping of the twist-angle with a resolution of 0.55(degrees), via polarization-resolved second harmonic generation (P-SHG) microscopy and we compare it with four-dimensional scanning transmission electron microscopy (4D STEM). It is found that the twist-angle imaging of WS2 bilayers, using the P-SHG technique is in excellent agreement with that obtained using electron diffraction. The main advantages of the optical approach are that the characterization is performed on the same substrate that the device is created on and that it is three orders of magnitude faster than the 4D STEM. We envisage that the optical P-SHG imaging could become the gold standard for the quality examination of TMD superlattice-based devices.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Times cited: 4
DOI: 10.1038/S41699-021-00258-5
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“Germanium vacancy centre formation in CVD nanocrystalline diamond using a solid dopant source”. Mary Joy R, Pobedinskas P, Bourgeois E, Chakraborty T, Görlitz J, Herrmann D, Noël C, Heupel J, Jannis D, Gauquelin N, D'Haen J, Verbeeck J, Popov C, Houssiau L, Becher C, Nesládek M, Haenen K, Science talks 5, 100157 (2023). http://doi.org/10.1016/j.sctalk.2023.100157
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.1016/j.sctalk.2023.100157
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“A step to disentangle diversity patterns in Uruguayan grasslands : climatic seasonality, novel land-uses, and landscape context drive diversity of ground flora”. Saeumel I, Ramirez LR, Santolin J, Pintado K, Conservation Science and Practice 5, 1 (2023). http://doi.org/10.1111/CSP2.12990
Abstract: South American grasslands contain extraordinary biodiversity and play a central role in the subsistence of regional agroecosystems. In recent decades, afforestation, followed by the soybean planting boom, have led to drastic land-use changes at the expense of grasslands. Impacts on local biodiversity have remained understudied. We explored the taxonomic richness and ss-diversity of plants of ground layer (excluding trees and shrubs) at different land uses, its interplay at regional scale with environmental heterogeneity, and at local scale with novel land cover types and landscape configurations. We conducted correlation, principal component, NDMS, and SDR analysis to explore variation of taxonomic richness, richness difference, replacement, and similarity of ground flora as response to environmental filters and land use change across Uruguay. We surveyed 160 plots distributed in 10 land cover types, that is, closed and open native forests, different grasslands, crops, orchards, and timber plantations. We observed overlaying regional patterns driven by seasonality of temperature and precipitation, and land cover shaping taxonomic richness at local scale. Landscape configuration affects diversity patterns of native ground flora, which seems to be sustained mainly by the “old growth grassland” species pool. Taxonomic richness of native species decreases with an increase of distance to grassland. Crops and grasslands harbor a higher number of native species in the ground flora than native forests and timber plantations. The introduction of exotics is driven mostly by crops or highly modified pastures. Diversity patterns only partially reflect the ecoregion concept. Expanding the perspective from conservation in purely natural ecosystems to measures conserving species richness in human-modified landscapes is a powerful tool against species loss in the Anthropocene.
Keywords: A1 Journal article; Sustainable Energy, Air and Water Technology (DuEL)
DOI: 10.1111/CSP2.12990
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“Quantum rotor in nanostructured superconductors”. Lin S-H, Milošević, MV, Covaci L, Janko B, Peeters FM, Scientific reports 4, 4542 (2014). http://doi.org/10.1038/srep04542
Abstract: Despite its apparent simplicity, the idealized model of a particle constrained to move on a circle has intriguing dynamic properties and immediate experimental relevance. While a rotor is rather easy to set up classically, the quantum regime is harder to realize and investigate. Here we demonstrate that the quantum dynamics of quasiparticles in certain classes of nanostructured superconductors can be mapped onto a quantum rotor. Furthermore, we provide a straightforward experimental procedure to convert this nanoscale superconducting rotor into a regular or inverted quantum pendulum with tunable gravitational field, inertia, and drive. We detail how these novel states can be detected via scanning tunneling spectroscopy. The proposed experiments will provide insights into quantum dynamics and quantum chaos.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 4.259
Times cited: 4
DOI: 10.1038/srep04542
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“Highly efficient rutile TiO2 photocatalysts with single Cu(II) and Fe(III) surface catalytic sites”. Neubert S, Mitoraj D, Shevlin SA, Pulisova P, Heimann M, Du Y, Goh GKL, Pacia M, Kruczała K, Turner S, Macyk W, Guo ZX, Hocking RK, Beranek R;, Journal of materials chemistry A : materials for energy and sustainability 4, 3127 (2016). http://doi.org/10.1039/c5ta07036h
Abstract: Highly active photocatalysts were obtained by impregnation of nanocrystalline rutile TiO2 powders with small amounts of Cu(II) and Fe(III) ions, resulting in the enhancement of initial rates of photocatalytic degradation of 4-chlorophenol in water by factors of 7 and 4, compared to pristine rutile, respectively. Detailed structural analysis by EPR and X-ray absorption spectroscopy (EXAFS) revealed that Cu(II) and Fe(III) are present as single species on the rutile surface. The mechanism of the photoactivity enhancement was elucidated by a combination of DFT calculations and detailed experimental mechanistic studies including photoluminescence measurements, photocatalytic experiments using scavengers, OH radical detection, and photopotential transient measurements. The results demonstrate that the single Cu(II) and Fe(III) ions act as effective cocatalytic sites, enhancing the charge separation, catalyzing “dark” redox reactions at the interface, thus improving the normally very low quantum yields of UV light-activated TiO2 photocatalysts. The exact mechanism of the photoactivity enhancement differs depending on the nature of the cocatalyst. Cu(II)-decorated samples exhibit fast transfer of photogenerated electrons to Cu(II/I) sites, followed by enhanced catalysis of dioxygen reduction, resulting in improved charge separation and higher photocatalytic degradation rates. At Fe(III)-modified rutile the rate of dioxygen reduction is not improved and the photocatalytic enhancement is attributed to higher production of highly oxidizing hydroxyl radicals produced by alternative oxygen reduction pathways opened by the presence of catalytic Fe(III/II) sites. Importantly, it was demonstrated that excessive heat treatment (at 450 degrees C) of photocatalysts leads to loss of activity due to migration of Cu(II) and Fe(III) ions from TiO2 surface to the bulk, accompanied by formation of oxygen vacancies. The demonstrated variety of mechanisms of photoactivity enhancement at single site catalyst-modified photocatalysts holds promise for developing further tailored photocatalysts for various applications.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 8.867
Times cited: 44
DOI: 10.1039/c5ta07036h
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“Thermal-strain-engineered ferromagnetism of LaMnO3/SrTiO3 heterostructures grown on silicon”. Chen B, Gauquelin N, Reith P, Halisdemir U, Jannis D, Spreitzer M, Huijben M, Abel S, Fompeyrine J, Verbeeck J, Hilgenkamp H, Rijnders G, Koster G, Physical review materials 4, 024406 (2020). http://doi.org/10.1103/PhysRevMaterials.4.024406
Abstract: The integration of oxides on Si remains challenging, which largely hampers the practical applications of oxide-based electronic devices with superior performance. Recently, LaMnO3/SrTiO3 (LMO/STO) heterostructures have gained renewed interest for the debating origin of the ferromagnetic-insulating ground state as well as for their spin-filter applications. Here we report on the structural and magnetic properties of high-quality LMO/STO heterostructures grown on silicon. The chemical abruptness across the interface was investigated by atomic-resolution scanning transmission electron microscopy. The difference in the thermal expansion coefficients between LMO and Si imposed a large biaxial tensile strain to the LMO film, resulting in a tetragonal structure with c/a∼ 0.983. Consequently, we observed a significantly suppressed ferromagnetism along with an enhanced coercive field, as compared to the less distorted LMO film (c/a∼1.004) grown on STO single crystal. The results are discussed in terms of tensile-strain enhanced antiferromagnetic instabilities. Moreover, the ferromagnetism of LMO on Si sharply disappeared below a thickness of 5 unit cells, in agreement with the LMO/STO case, pointing to a robust critical behavior irrespective of the strain state. Our results demonstrate that the growth of oxide films on Si can be a promising way to study the tensile-strain effects in correlated oxides, and also pave the way towards the integration of multifunctional oxides on Si with atomic-layer control.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
Times cited: 6
DOI: 10.1103/PhysRevMaterials.4.024406
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“Co valence transformation in isopolar LaCoO3/LaTiO3 perovskite heterostructures via interfacial engineering”. Araizi-Kanoutas G, Geessinck J, Gauquelin N, Smit S, Verbeek XH, Mishra SK, Bencok P, Schlueter C, Lee T-L, Krishnan D, Fatermans J, Verbeeck J, Rijnders G, Koster G, Golden MS, Physical review materials 4, 026001 (2020). http://doi.org/10.1103/PhysRevMaterials.4.026001
Abstract: We report charge transfer up to a single electron per interfacial unit cell across nonpolar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and trilayer systems grown using pulsed laser deposition, soft x-ray absorption, dichroism, and scanning transmission electron microscopy-electron energy loss spectroscopy are used to probe the cobalt-3d electron count and provide an element-specific investigation of the magnetic properties. The experiments show the cobalt valence conversion is active within 3 unit cells of the heterointerface, and able to generate full conversion to 3d7 divalent Co, which displays a paramagnetic ground state. The number of LaTiO3/LaCoO3 interfaces, the thickness of an additional, electronically insulating “break” layer between the LaTiO3 and LaCoO3, and the LaCoO3 film thickness itself in trilayers provide a trio of control knobs for average charge of the cobalt ions in LaCoO3, illustrating the efficacy of O−2p band alignment as a guiding principle for property design in complex oxide heterointerfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
Times cited: 13
DOI: 10.1103/PhysRevMaterials.4.026001
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“Two-dimensional electron systems in perovskite oxide heterostructures : role of the polarity-induced substitutional defects”. Lin S-C, Kuo C-T, Shao Y-C, Chuang Y-D, Geessinck J, Huijben M, Rueff J-P, Graff IL, Conti G, Peng Y, Bostwick A, Gullikson E, Nemsak S, Vailionis A, Gauquelin N, Verbeeck J, Ghiringhelli G, Schneider CM, Fadley CS, Physical review materials 4, 115002 (2020). http://doi.org/10.1103/PHYSREVMATERIALS.4.115002
Abstract: The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, the fundamental origins of the 2DES are still not understood, e.g., the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a comprehensive spectroscopic investigation on the depth profile of 2DES-relevant Ti 3d interface carriers using depthand element-specific techniques like standing-wave excited photoemission and resonant inelastic scattering. We found that one type of Ti 3d interface carriers, which give rise to the 2DES are located within three unit cells from the n-type interface in the SrTiO3 layer. Unexpectedly, another type of interface carriers, which are polarity-induced Ti-on-Al antisite defects, reside in the first three unit cells of the opposing LaAlO3 layer (similar to 10 angstrom). Our findings provide a microscopic picture of how the localized and mobile Ti 3d interface carriers distribute across the interface and suggest that the 2DES and 2D magnetism at the LaAlO3/SrTiO3 interface have disparate explanations as originating from different types of interface carriers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.4
Times cited: 7
DOI: 10.1103/PHYSREVMATERIALS.4.115002
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“Increased Performance Improvement of Lithium-Ion Batteries by Dry Powder Coating of High-Nickel NMC with Nanostructured Fumed Ternary Lithium Metal Oxides”. Herzog MJ, Gauquelin N, Esken D, Verbeeck J, Janek J, ACS applied energy materials 4, 8832 (2021). http://doi.org/10.1021/acsaem.1c00939
Abstract: Dry powder coating is an effective approach to protect the surfaces of layered cathode active materials (CAMs) in lithium-ion batteries. Previous investigations indicate an incorporation of lithium ions in fumed Al2O3, ZrO2, and TiO2 coatings on LiNi0.7Mn0.15Co0.15O2 during cycling, improving the cycling performance. Here, this coating approach is transferred for the first time to fumed ternary LiAlO2, Li4Zr3O8, and Li4Ti5O12 and directly compared with their lithium-free equivalents. All materials could be processed equally and their nanostructured small aggregates accumulate on the CAM surfaces to quite homogeneous coating layers with a certain porosity. The LiNixMnyCozO2 (NMC) coated with lithium-containing materials shows an enhanced improvement in overall capacity, capacity retention, rate performance, and polarization behavior during cycling, compared to their lithium-free analogues. The highest rate performance was achieved with the fumed ZrO2 coating, while the best long-term cycling stability with the highest absolute capacity was obtained for the fumed LiAlO2-coated NMC. The optimal coating agent for NMC to achieve a balanced system is fumed Li4Ti5O12, providing a good compromise between high rate capability and good capacity retention. The coating agents prevent CAM particle cracking and degradation in the order LiAlO2 ≈ Al2O3 > Li4Ti5O12 > Li4Zr3O8 > ZrO2 > TiO2. A schematic model for the protection and electrochemical performance enhancement of high-nickel NMC with fumed metal oxide coatings is sketched. It becomes apparent that physical and chemical characteristics of the coating significantly influence the performance of NMC. A high degree of coating-layer porosity is favorable for the rate capability, while a high coverage of the surface, especially in vulnerable grain boundaries, enhances the long-term cycling stability and improves the cracking behavior of NMCs. While zirconium-containing coatings possess the best chemical properties for high rate performances, aluminum-containing coatings feature a superior chemical nature to protect high-nickel NMCs.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1021/acsaem.1c00939
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“Electronic and chemical properties of nickel oxide thin films and the intrinsic defects compensation mechanism”. Poulain R, Lumbeeck G, Hunka J, Proost J, Savolainen H, Idrissi H, Schryvers D, Gauquelin N, Klein A, ACS applied electronic materials 4, 2718 (2022). http://doi.org/10.1021/ACSAELM.2C00230
Abstract: Although largely studied, contradictory results on nickel oxide (NiO) properties can be found in the literature. We herein propose a comprehensive study that aims at leveling contradictions related to NiO materials with a focus on its conductivity, surface properties, and the intrinsic charge defects compensation mechanism with regards to the conditions preparation. The experiments were performed by in situ photo-electron spectroscopy, electron energy loss spectroscopy, and optical as well as electrical measurements on polycrystalline NiO thin films prepared under various preparation conditions by reactive sputtering. The results show that surface and bulk properties were strongly related to the deposition temperature with in particular the observation of Fermi level pinning, high work function, and unstable oxygen-rich grain boundaries for the thin films produced at room temperature but not at high temperature (>200 degrees C). Finally, this study provides substantial information about surface and bulk NiO properties enabling to unveil the origin of the high electrical conductivity of room temperature NiO thin films and also for supporting a general electronic charge compensation mechanism of intrinsic defects according to the deposition temperature.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.1021/ACSAELM.2C00230
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“High-strain-induced local modification of the electronic properties of VO₂, thin films”. Birkholzer YA, Sotthewes K, Gauquelin N, Riekehr L, Jannis D, van der Minne E, Bu Y, Verbeeck J, Zandvliet HJW, Koster G, Rijnders G, ACS applied electronic materials 4, 6020 (2022). http://doi.org/10.1021/ACSAELM.2C01176
Abstract: Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long- and short-range elastic distortions, as well as the symmetry change and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue toward mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surface layer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1021/ACSAELM.2C01176
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“Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures”. Wu S, Luo X, Turner S, Peng H, Lin W, Ding J, David A, Wang B, Van Tendeloo G, Wang J, Wu T;, Physical review X 3, 041027 (2013). http://doi.org/10.1103/PhysRevX.3.041027
Abstract: Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the unconventional bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.789
Times cited: 77
DOI: 10.1103/PhysRevX.3.041027
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“Single-atom Catalysis Using Pt/Graphene Achieved through Atomic Layer Deposition”. Shuhui Sun Gaixia Zhang Nicolas Gauquelin Ning Chen Jigang Zhou Songlan Yang Weifeng Chen Xiangbo Meng Dongsheng Geng Mohammad N Banis Ruying Li Siyu Ye Shanna Knights Gianluigi A Botton Tsun-Kong Sham &, Xueliang Sun, Scientific Reports 3, 1775 (2013). http://doi.org/10.1038/srep01775
Abstract: Platinum-nanoparticle-based catalysts are widely used in many important chemical processes and
automobile industries. Downsizing catalyst nanoparticles to single atoms is highly desirable to maximize
their use efficiency, however, very challenging. Here we report a practical synthesis for isolated single Pt
atoms anchored to graphene nanosheet using the atomic layer deposition (ALD) technique. ALD offers the
capability of precise control of catalyst size span from single atom, subnanometer cluster to nanoparticle.
The single-atom catalysts exhibit significantly improved catalytic activity (up to 10 times) over that of the
state-of-the-art commercial Pt/C catalyst. X-ray absorption fine structure (XAFS) analyses reveal that the
low-coordination and partially unoccupied densities of states of 5d orbital of Pt atoms are responsible for the
excellent performance. This work is anticipated to form the basis for the exploration of a next generation of
highly efficient single-atom catalysts for various applications.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Times cited: 345
DOI: 10.1038/srep01775
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“Controlling the interfacial conductance in LaAlO3/SrTiO3 in 90 degrees off-axis sputter deposition”. Yin C, Krishnan D, Gauquelin N, Verbeeck J, Aarts J, Physical review materials 3, 034002 (2019). http://doi.org/10.1103/PHYSREVMATERIALS.3.034002
Abstract: We report on the fabrication of conducting interfaces between LaAlO3 and SrTiO3 by 90 degrees off-axis sputtering in an Ar atmosphere. At a growth pressure of 0.04 mbar the interface is metallic, with a carrier density of the order of 1 x 10(13) cm(-2) at 3 K. By increasing the growth pressure, we observe an increase of the out-of-plane lattice constants of the LaAlO3 films while the in-plane lattice constants do not change. Also, the low-temperature sheet resistance increases with increasing growth pressure, leading to an insulating interface when the growth pressure reaches 0.10 mbar. We attribute the structural variations to an increase of the La/Al ratio, which also explains the transition from metallic behavior to insulating behavior of the interfaces. Our research shows that the control which is furnished by the Ar pressure makes sputtering as versatile a process as pulsed laser deposition, and emphasizes the key role of the cation stoichiometry of LaAlO3 in the formation of the conducting interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.926
Times cited: 4
DOI: 10.1103/PHYSREVMATERIALS.3.034002
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“The superconducting bismuth-based mixed oxides”. Antipov EV, Khasanova NR, Pshirkov JS, Putilin SN, Bougerol C, Lebedev OI, Van Tendeloo G, Baranov AN, Park YW, Current applied physics
T2 –, QTSM and QFS 02 Symposium, MAY 08-10, 2002, SEOUL, SOUTH KOREA 2, 425 (2002). http://doi.org/10.1016/S1567-1739(02)00105-0
Abstract: The present paper describes the synthesis, characterization of mixed-valence bismuthates with three- or two-dimensional perovskite-like structures and structural criteria that influence superconductivity in these compounds. Single-phase samples of Sr1-xKxBiO3 were prepared for the broad range of K-content: 0.25 less than or equal to x less than or equal to 0.65. For these bismuthates the symmetry of the structure changes from monoclinic to orthorhombic and finally to tetragonal upon increasing the K-content thus resulting in the decrease of the Bi-O distances and reduction of the network distortions. Superconductivity with maximum T-c = 12 K exists in the narrow range (x approximate to 0.5-0.6) within the stability field of the tetragonal phase (0.33 less than or equal to x less than or equal to 0.65), when the three-dimensional octahedral framework has close to the ideal perovskite structure arrangement. The layered type (Ba,K)(3)Bi2O7 and (Ba,K)(2)BiO4 bismuthates belonging to the A(n+1)B(n)O(3n+1) homologous series were investigated. Buckling of the (BiO2) layers in the structure of the n = 2 member occurs due to the ordering of alkaline- and alkaline-earth cations between two independent positions. The formation of the one-layer bismuthate was revealed by Electron Microscopy and XRPD studies. Both types of compounds are considered to be possible candidates for new superconducting materials among bismuthates. (C) 2002 Published by Elsevier Science B.V.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.971
Times cited: 2
DOI: 10.1016/S1567-1739(02)00105-0
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“Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films”. Zhang H, Gauquelin N, McMahon C, Hawthorn DG, Botton GA, Wei JYT, Physical review materials 2, 033803 (2018). http://doi.org/10.1103/PHYSREVMATERIALS.2.033803
Abstract: It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7-delta grown by pulsed laser deposition are annealed at up to 700 atm O-2 and 900 degrees C, in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15-delta and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9-delta and YBa2Cu6O10-delta phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7-delta powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1103/PHYSREVMATERIALS.2.033803
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“Berry phase engineering at oxide interfaces”. Groenendijk DJ, Autieri C, van Thiel TC, Brzezicki W, Hortensius JR, Afanasiev D, Gauquelin N, Barone P, van den Bos KHW, van Aert S, Verbeeck J, Filippetti A, Picozzi S, Cuoco M, Caviglia AD, 2, 023404 (2020). http://doi.org/10.1103/PhysRevResearch.2.023404
Abstract: Three-dimensional strontium ruthenate (SrRuO3) is an itinerant ferromagnet that features Weyl points acting as sources of emergent magnetic fields, anomalous Hall conductivity, and unconventional spin dynamics. Integrating SrRuO3 in oxide heterostructures is potentially a novel route to engineer emergent electrodynamics, but its electronic band topology in the two-dimensional limit remains unknown. Here we show that ultrathin SrRuO3 exhibits spin-polarized topologically nontrivial bands at the Fermi energy. Their band anticrossings show an enhanced Berry curvature and act as competing sources of emergent magnetic fields. We control their balance by designing heterostructures with symmetric (SrTiO3/SrRuO3/SrTiO3 and SrIrO3/SrRuO3/SrIrO3) and asymmetric interfaces (SrTiO3/SrRuO3/SrIrO3). Symmetric structures exhibit an interface-tunable single-channel anomalous Hall effect, while ultrathin SrRuO3 embedded in asymmetric structures shows humplike features consistent with multiple Hall contributions. The band topology of two-dimensional SrRuO3 proposed here naturally accounts for these observations and harmonizes a large body of experimental results.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 58
DOI: 10.1103/PhysRevResearch.2.023404
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“_BiMnFe2O6, a polysynthetically twinned hcp MO structure”. Yang T, Abakumov AM, Hadermann J, Van Tendeloo G, Nowik I, Stephens PW, Hamberger J, Tsirlin AA, Ramanujachary KV, Lofland S, Croft M, Ignatov A, Sun J, Greenblatt M, Chemical science 1, 751 (2010). http://doi.org/10.1039/c0sc00348d
Abstract: The most efficient use of spatial volume and the lowest potential energies in the metal oxide structures are based on cubic close packing (ccp) or hexagonal close packing (hcp) of anions with cations occupying the interstices. A promising way to tune the composition of close packed oxides and design new compounds is related to fragmenting the parent structure into modules by periodically spaced planar interfaces, such as twin planes at the unit cell scale. The unique crystal chemistry properties of cations with a lone electron pair, such as Bi3+ or Pb2+, when located at interfaces, enables them to act as chemical scissors, to help relieve configurational strain. With this approach, we synthesized a new oxide, BiMnFe2O6, where fragments of the hypothetical hcp oxygen-based MO structure (the NiAs structure type), for the first time, serve as the building modules in a complex transition metal oxide. Mn3+ and Fe3+ ions are randomly distributed in two crystallographically independent sites (M1 and M2). The structure consists of quasi two-dimensional blocks of the 2H hexagonal close packed MO structure cut along the (114) crystal plane of the hcp lattice and stacked along the c axis. The blocks are related by a mirror operation that allows BiMnFe2O6 to be considered as a polysynthetically twinned 2H hcp MO structure. The transition to an AFM state with an incommensurate spin configuration at [similar] 212 K is established by 57Fe Mössbauer spectroscopy, magnetic susceptibility, specific heat and low temperature powder neutron diffraction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.668
Times cited: 12
DOI: 10.1039/c0sc00348d
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“Formation of a conducting LaAlO3/SrTiO3 interface studied by low-energy electron reflection during growth”. van der Torren AJH, Liao Z, Xu C, Gauquelin N, Yin C, Aarts J, van der Molen SJ, Physical Review Materials 1, 075001 (2017). http://doi.org/10.1103/PhysRevMaterials.1.075001
Abstract: The two-dimensional electron gas occurring between the band insulators SrTiO 3 and LaAlO 3 continues to attract considerable interest, due to the possibility of dynamic control over the carrier density, and the ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations, there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO 3 layer at the growth temperature (around 800 ◦ C) in oxygen (pressure around 5 × 10 −5 mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in-situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO 2 -rich surface and a conducting interface; or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Times cited: 2
DOI: 10.1103/PhysRevMaterials.1.075001
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Lin N (2012) Dynamics of interacting clusters in low-dimensional superconductors. Antwerpen
Keywords: Doctoral thesis; Condensed Matter Theory (CMT)
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“Intrinsic thermal instability of methylammonium lead trihalide perovskite”. Conings B, Drijkoningen J, Gauquelin N, Babayigit A, D'Haen J, D'Olieslaeger L, Ethirajan A, Verbeeck J, Manca J, Mosconi E, Angelis FD, Boyen HG;, Laser physics review 5, 1500477 (2015). http://doi.org/10.1002/aenm.201500477
Abstract: Organolead halide perovskites currently are the new front-runners as light absorbers in hybrid solar cells, as they combine efficiencies passing already 20% with deposition temperatures below 100 °C and cheap solution-based fabrication routes. Long-term stability remains a major obstacle for application on an industrial scale. Here, it is demonstrated that significant decomposition effects already occur during annealing of a methylammonium lead triiode perovskite at 85 °C even in inert atmosphere thus violating international standards. The observed behavior supports the view of currently used perovskite materials as soft matter systems with low formation energies, thus representing a major bottleneck for their application, especially in countries with high average temperatures. This result can trigger a broader search for new perovskite families with improved thermal stability.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 16.721
Times cited: 1691
DOI: 10.1002/aenm.201500477
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“Domain Selectivity in BiFeO3Thin Films by Modified Substrate Termination”. Solmaz A, Huijben M, Koster G, Egoavil R, Gauquelin N, Van Tendeloo G, Verbeeck J, Noheda B, Rijnders G, Advanced functional materials 26, 2882 (2016). http://doi.org/10.1002/adfm.201505065
Abstract: Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71° and 109°, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO3 and TbScO3, strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO3 layers.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 34
DOI: 10.1002/adfm.201505065
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“Engineering properties by long range symmetry propagation initiated at perovskite heterostructure interface”. Liao ZL, Green RJ, Gauquelin N, Gonnissen J, Van Aert S, Verbeeck J, et al, Advanced functional materials , 1 (2016)
Abstract: In epitaxial thin film systems, the crystal structure and its symmetry deviate from the bulk counterpart due to various mechanisms such as epitaxial strain and interfacial structural coupling, which induce an accompanying change in their properties. In perovskite materials, the crystal symmetry can be described by rotations of 6-fold coordinated transition metal oxygen octahedra, which are found to be altered at interfaces. Here, we unravel how the local oxygen octahedral coupling (OOC) at perovskite heterostructural interfaces initiates a different symmetry in epitaxial films and provide design rules to induce various symmetries in thin films by careful selecting appropriate combinations of substrate/buffer/film. Very interestingly we discovered that these combinations lead to symmetry changes throughout the full thickness of the film. Our results provide a deep insight into understanding the origin of induced crystal symmetry in a perovskite heterostructure and an intelligent route to achieve unique functional properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
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“Structure-property relations of methylamine vapor treated hybrid perovskite CH3NH3PbI3 films and solar cells”. Conings B, Bretschneider SA, Babayigit A, Gauquelin N, Cardinaletti I, Manca JV, Verbeeck J, Snaith HJ, Boyen H-G, ACS applied materials and interfaces 9, 8092 (2017). http://doi.org/10.1021/acsami.6b15175
Abstract: The power conversion efficiency of halide perovskite solar cells is heavily dependent on the perovskite layer being sufficiently smooth and pinhole-free. It has been shown that these features can be obtained even when starting out from rough and discontinuous perovskite film, by briefly exposing it to methylamine (MA) vapor. The exact underlying physical mechanisms of this phenomenon are, however, still unclear. By investigating smooth, MA treated films, based on very rough and discontinuous reference films of methylammonium triiode (MAPbI3), considering their morphology, crystalline features, local conductive properties, and charge carrier lifetime, we unravel the relation between their characteristic physical qualities and their performance in corresponding solar cells. We discover that the extensive improvement in photovoltaic performance upon MA treatment is a consequence of the induced morphological enhancement of the perovskite layer, together with improved electron injection into TiO2, which in fact compensates for an otherwise compromised bulk electronic quality, simultaneously caused by the MA treatment.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.504
Times cited: 43
DOI: 10.1021/acsami.6b15175
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“Energy Level Alignment and Cation Charge States at the LaFeO3/LaMnO3(001) Heterointerface”. Smolin SY, Choquette AK, Wilks RG, Gauquelin N, Félix R, Gerlach D, Ueda S, Krick AL, Verbeeck J, Bär M, Baxter JB, May SJ, Advanced Materials Interfaces 4, 1700183 (2017). http://doi.org/10.1002/admi.201700183
Abstract: The electronic properties of LaFeO 3 /LaMnO 3 epitaxial heterojunctions are investigated to determine the valence and conduction band offsets and the nominal Mn and Fe valence states at the interface. Studying a systematic series of (LaFeO 3 ) n /(LaMnO 3 ) m bilayers (m ≈ 50) epitaxially grown in the (001) orientation using molecular beam epitaxy, layer-resolved electron energy loss spectroscopy reveals a lack of significant interfacial charge transfer, with a nominal 3+ valence state observed for both Mn and Fe across the interface. Through a combination of variable angle spectroscopic ellipsometry and hard X-ray photoelectron spectroscopy, type I energy level alignments are obtained at the LaFeO 3 /LaMnO 3 interface with positive valence and conduction band offsets of (1.20 ± 0.07) eV and (0.5–0.7 ± 0.3) eV, respectively, with minimal band bending. Variable temperature resistivity measurements reveal that the bilayers remain insulating and that the presence of the heterojunction does not result in a conducting interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.279
Times cited: 14
DOI: 10.1002/admi.201700183
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