Abstract: The layered structure of Sr21Bi8Cu2(CO3)(2)O-41 (Z = 2) was determined by transmission electron microscopy, infrared spectroscopy, and powder X-ray diffraction refinement in space group P6(3)/mcm (No. 194), with a = 10.0966(3)angstrom and c = 26.3762(5)angstrom. This original 10L-type structure is built from two structural blocks, namely, [Sr15Bi6Cu2(CO3)O-29] and [Sr6Bi2(CO3)O-12]. The Bi5+ cations form [Bi2O10] dimers, whereas the Cu2+ and C atoms occupy infinite tunnels running along (c) over right arrow. The nature of the different blocks and layers is discussed with regard to the existing hexagonal layered compounds. Sr21Bi8Cu2(CO3)(2)O-41 is insulating and paramagnetic.

Abstract: The relationship between the microstructural and internal stress evolution during Ti anodising is discussed. Samples anodised galvanostatically to 12 V and 40 V, corresponding to different stages of the internal stress evolution, were examined by in-plane and cross-section transmission electron microscopy. Electron diffraction patterns have been complemented with stoichiometry data obtained from energy loss near edge structure spectra. The sample anodised to 40 V was observed to consist of two regions, with a crystallised inner region adjacent to the metal/oxide interface. Crystallisation of this region is associated with the presence of large compressive internal stresses which build up during anodising up to 12 V.

Abstract: Oxidative etching was used to produce gold seeds of different sizes and crystal habits. Following detailed characterization, the seeds were grown under different conditions. Our results bring new insights toward understanding the effect of size and crystallinity on the growth of anisotropic particles, whilst identifying guidelines for the optimisation of new synthetic protocols of predesigned seeds.

Abstract: For many years, photocatalysis has been proposed as one of the promising techniques to abate environmental pollutants. To improve these reactions it is vital to know the reaction mechanisms of the photocatalytic degradation. This new reactor will make it possible to study the catalytic surface at the moment the reactions occur. By the means of UV LED illumination there is no need of an external UV lamp and thus lowers the cost. The validation of this newly developed reactor is done by investigating the photocatalytic reaction mechanism of nitric oxide (NO) and comparing these findings with those already discussed in literature. From these results, it became clear that the newly developed FTIR in situ reactor allows real time study of photocatalytic degradations.

Abstract: Plasma catalysis is gaining increasing interest for various gas conversion applications, such as CO2 conversion into value-added chemicals and fuels, CH4 activation into hydrogen, higher hydrocarbons or oxygenates, and NH3 synthesis. Other applications are already more established, such as for air pollution control, e.g. volatile organic compound remediation, particulate matter and NOx removal. In addition, plasma is also very promising for catalyst synthesis and treatment. Plasma catalysis clearly has benefits over ‘conventional’ catalysis, as outlined in the Introduction. However, a better insight into the underlying physical and chemical processes is crucial. This can be obtained by experiments applying diagnostics, studying both the chemical processes at the catalyst surface and the physicochemical mechanisms of plasma-catalyst interactions, as well as by computer modeling. The key challenge is to design cost-effective, highly active and stable catalysts tailored to the plasma environment. Therefore, insight from thermal catalysis as well as electro- and photocatalysis is crucial. All these aspects are covered in this Roadmap paper, written by specialists in their field, presenting the state-of-the-art, the current and future challenges, as well as the advances in science and technology needed to meet these challenges.

Abstract: A polynomial approach is applied for a number of data from the Posener-tables to calculate the values of the intensity distribution function of atomic absorption lines – H(a, 0.726a) – at the tabulated damping-parameter values with an error not worse than 0.044 %. For the resultant H(a, 0.726a) data, the ninth and sixth order polynomials can be fitted according to the damping parameter range of 0-2, and 2-10, respectively, which results in a minimal error of approximation. The derived functions are simply applicable to the calculation of any H(a, 0.726a) value belonging to a damping-parameter of any arbitrarily selected spectral line, implying the influence of Doppler- and Lorentz-broadening. The overall error of the described method is lower than 0.4 %.

Abstract: We present a theoretical study of the electronic structure of a heavily Si delta-doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier. In this class of structures the effect of DX centers on the electronic properties can be tuned by changing the AlxGa1-xAs barrier width and/or the Al concentration, which leads to a lowering of the DX level with respect to the Fermi energy without disturbing the wave functions much. A self-consistent approach is developed in which the effective confinement potential and the Fermi energy of the system, the energies, the wave functions, and the electron densities of the discrete subbands have been obtained as a function of both the material parameters of the samples and the experimental conditions. The effect of DX centers on such structures at nonzero temperature and under an external pressure is investigated for three different models: (1) the DX(nc)(0) model with no correlation effects, (2) the d(+)/DX(0) model, and (3) the d(+)/DX(-) model with inclusion of correlation effects. In the actual calculation, influences of the background accepters, the discontinuity of the effective mass of the electrons at the interfaces of the different materials, band nonparabolicity, and the exchange-correlation energy of the electrons have been taken into account. We have found that (1) introducing a quantum barrier into delta-doped GaAs makes it possible to control the energy gaps between different electronic; subbands; (2) the electron wave functions are mon spread out when the repellent effect of the barriers is increased as compared to those in delta-doped GaAs; (3) increasing the quantum-barrier height and/or the application of hydrostatic pressure are helpful to experimentally observe the effect of the DX centers through a decrease of the total free-electron density; and (4) the correlation effects of the charged impurities are important for the systems under study.

Abstract: CsTlCl3 and CsTlF3 perovskites have been theoretically predicted to be superconductors when properly hole-doped. Both compounds have been previously prepared as pure compounds: CsTlCl3 in a tetragonal (I4/m) and a cubic (Fm3̅m) perovskite polymorph and CsTlF3 as a cubic perovskite (Fm3̅m). In this work, substitution of Tl in CsTlCl3 with Hg is reported, in an attempt to hole-dope the system and induce superconductivity. The whole series CsTl1xHgxCl3 (x = 0.0, 0.1, 0.2, 0.4, 0.6, and 0.8) was prepared. CsTl0.9Hg0.1Cl3 is tetragonal as the more stable phase of CsTlCl3. However, CsTl0.8Hg0.2Cl3 is already cubic with the space group Fm3̅m and with two different positions for Tl+ and Tl3+. For x = 0.4 and 0.5, solid solutions could not be formed. For x ≥ 0.6, the samples are primitive cubic perovskites with one crystallographic position for Tl+, Tl3+, and Hg2+. All of the samples formed are insulating, and there is no signature of superconductivity. X-ray absorption spectroscopy indicates that all of the samples have a mixed-valence state of Tl+ and Tl3+. Raman spectroscopy shows the presence of the active TlClTl stretching mode over the whole series and the intensity of the TlClHg mode increases with increasing Hg content. First-principle calculations confirmed that the phases are insulators in their ground state and that Hg is not a good dopant in the search for superconductivity in this system.

Abstract: CoFe2/CoFe2O4 bilayers were made by pulsed laser ablation of a CoFe2 target on Si(I 0 0) substrates. The metallic layer was deposited first, in vacuum. The oxide was then deposited in an oxidizing O-2:N-2 (20:80) atmosphere. Two different procedures were used for the introduction of the oxidizing atmosphere in the deposition chamber: the laser ablation of the target was either stopped (discontinuous deposition process) or maintained (continuous deposition process) during the 20 min necessary for the establishment of the desired O-2:N-2 pressure. In both cases, the different electronegativities of Fe and Co cause an important modification of the Fe/Co ratio at the metal/oxide interface, with a depletion of Fe in the metal region and of Co in the oxide region. In the continuous procedure, the combination of the kinetic energy given by the ablation process to the Fe and Co adatoms with the one they get from their different affinity towards oxidation allows the formation of a low roughness metal/oxide interface with a high (111) preferred orientation of the CoFe2O4 layer, an induced re-crystallisation of the metal layer underneath and an unusual antiferromagnetic metal/oxide magnetic coupling. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.