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Records |
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Author |
Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. |
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Title |
Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures |
Type |
A1 Journal article |
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Year |
2001 |
Publication |
Journal of the electrochemical society |
Abbreviated Journal |
J Electrochem Soc |
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Volume |
148 |
Issue |
11 |
Pages |
G597-G601 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society. |
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Corporate Author |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000171653100038 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0013-4651; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.259 |
Times cited |
13 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.259; 2001 IF: 2.033 |
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Call Number |
UA @ lucian @ c:irua:103394 |
Serial |
1725 |
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Permanent link to this record |
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Author |
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
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Title |
Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization |
Type |
A1 Journal article |
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Year |
1996 |
Publication |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr |
Abbreviated Journal |
Nucl Instrum Meth B |
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Volume |
112 |
Issue |
1-4 |
Pages |
325-329 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix. |
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Corporate Author |
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Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1996UW20100069 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-583X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.124 |
Times cited |
9 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:95886 |
Serial |
1742 |
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Permanent link to this record |
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Author |
Teodorescu, V.S.; Mihailescu, I.N.; Dinescu, M.; Chitica, N.; Nistor, L.C.; van Landuyt, J.; Barborica, A. |
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Title |
Laser induced phase transition in iron thin films |
Type |
A1 Journal article |
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Year |
1994 |
Publication |
Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation |
Abbreviated Journal |
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Volume |
4 |
Issue |
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Pages |
127-130 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Publisher |
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Place of Publication |
Les Ulis |
Editor |
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Language |
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Wos |
A1994NT08700028 |
Publication Date |
2007-07-16 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1155-4339; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
2 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:10003 |
Serial |
1787 |
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Permanent link to this record |
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Author |
Linssen, T.; Cool, P.; Baroudi, M.; Cassiers, K.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
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Title |
Leached natural saponite as the silicate source in the synthesis of aluminosilicate hexagonal mesoporous materials |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical |
Abbreviated Journal |
J Phys Chem B |
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Volume |
106 |
Issue |
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Pages |
4470-4476 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
000175356900019 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1520-6106;1520-5207; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.177 |
Times cited |
23 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.177; 2002 IF: 3.611 |
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Call Number |
UA @ lucian @ c:irua:46279 |
Serial |
1811 |
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Permanent link to this record |
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Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; de Keyzer, R. |
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Title |
Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Surface science : a journal devoted to the physics and chemistry of interfaces |
Abbreviated Journal |
Surf Sci |
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Volume |
337 |
Issue |
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Pages |
153-165 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1995RQ74900024 |
Publication Date |
2003-05-13 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0039-6028; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.925 |
Times cited |
10 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:13162 |
Serial |
1836 |
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Permanent link to this record |
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Author |
Volkov, V.V.; van Landuyt, J.; Marushkin, K.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
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Title |
LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas |
Type |
A1 Journal article |
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Year |
1997 |
Publication |
Sensors and actuators : A : physical |
Abbreviated Journal |
Sensor Actuat A-Phys |
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Volume |
62 |
Issue |
1/3 |
Pages |
624-632 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
Highly effective IR light-emitting diodes operating at the wavelength 1.66 mu m and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/ In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM),electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CK, gas sensor has been developed and fabricated an the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested, It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2 x 1 km. (C) 1997 Elsevier Science S.A. |
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Corporate Author |
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Publisher |
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Place of Publication |
Lausanne |
Editor |
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Language |
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Wos |
A1997YD90600029 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0924-4247; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.499 |
Times cited |
3 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.499; 1997 IF: 0.635 |
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Call Number |
UA @ lucian @ c:irua:20455 |
Serial |
1855 |
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Permanent link to this record |
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Author |
Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. |
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Title |
Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
92 |
Issue |
8 |
Pages |
4336-4341 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000178318000024 |
Publication Date |
2002-10-07 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
5 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.068; 2002 IF: 2.281 |
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Call Number |
UA @ lucian @ c:irua:39872 |
Serial |
2005 |
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Permanent link to this record |
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Author |
Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H. |
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Title |
Microstructural characterization of diamond films deposited on c-BN crystals |
Type |
A1 Journal article |
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Year |
2000 |
Publication |
Diamond and related materials
T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC |
Abbreviated Journal |
Diam Relat Mater |
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Volume |
9 |
Issue |
3-6 |
Pages |
269-273 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000087382400009 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0925-9635; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.561 |
Times cited |
9 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.561; 2000 IF: 1.591 |
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Call Number |
UA @ lucian @ c:irua:102877 |
Serial |
2041 |
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Permanent link to this record |
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Author |
Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1 |
Type |
A1 Journal article |
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Year |
1997 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
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Volume |
172 |
Issue |
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Pages |
433-439 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1997WL65300019 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-0248 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.751 |
Times cited |
23 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.751; 1997 IF: 1.259 |
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Call Number |
UA @ lucian @ c:irua:21405 |
Serial |
2051 |
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Permanent link to this record |
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Author |
Nistor, L.C.; Nistor, S.V.; Dinca, G.; Georgeoni, P.; van Landuyt, J.; Manfredotti, C.; Vittone, E. |
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Title |
Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions |
Type |
A1 Journal article |
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Year |
2002 |
Publication |
Journal of physics : condensed matter |
Abbreviated Journal |
J Phys-Condens Mat |
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Volume |
14 |
Issue |
44 |
Pages |
10983-10988 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp(3) bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 +/- 15 mJ m(-2) is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000179541700114 |
Publication Date |
2002-10-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0953-8984; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.649 |
Times cited |
7 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.649; 2002 IF: 1.775 |
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Call Number |
UA @ lucian @ c:irua:103328 |
Serial |
2061 |
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Permanent link to this record |
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Author |
Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. |
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Title |
Microstructure of Mn-doped, spin-cast FeSi2 |
Type |
A1 Journal article |
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Year |
1997 |
Publication |
Journal of electron microscopy |
Abbreviated Journal |
Microscopy-Jpn |
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Volume |
46 |
Issue |
3 |
Pages |
221-225 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Tokyo |
Editor |
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Language |
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Wos |
A1997XP43400004 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-0744; 1477-9986 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.9 |
Times cited |
3 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:21410 |
Serial |
2070 |
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Permanent link to this record |
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Author |
Chen, J.H.; van Dyck, D.; op de Beeck, M.; Broeckx, J.; van Landuyt, J. |
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Title |
Modification of the multislice method for calculating coherent STEM images |
Type |
A1 Journal article |
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Year |
1995 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
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Volume |
150 |
Issue |
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Pages |
13-22 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Berlin |
Editor |
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Language |
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Wos |
A1995RQ21500002 |
Publication Date |
2007-01-12 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0031-8965;1521-396X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
5 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:13292 |
Serial |
2159 |
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Permanent link to this record |
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Author |
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
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Title |
Morphology and defects in shallow trench isolation structures |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
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Volume |
164 |
Issue |
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Pages |
443-446 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000166835300094 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0305-2346 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
1 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:29690 |
Serial |
2206 |
|
Permanent link to this record |
|
|
|
|
Author |
Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Smolin, A.A. |
|
|
Title |
Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Diamond and related materials |
Abbreviated Journal |
Diam Relat Mater |
|
|
Volume |
6 |
Issue |
|
Pages |
159-168 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1997WN37300021 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0925-9635 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.561 |
Times cited |
116 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.561; 1997 IF: 1.758 |
|
|
Call Number |
UA @ lucian @ c:irua:21406 |
Serial |
2249 |
|
Permanent link to this record |
|
|
|
|
Author |
Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. |
|
|
Title |
New erbium silicide superstructures: a study by high resolution electron microscopy |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
|
|
|
Volume |
158 |
Issue |
|
Pages |
107-116 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
|
|
Language |
|
Wos |
A1996VY72800013 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0031-8965 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
6 |
Open Access |
|
|
|
Notes |
|
Approved |
PHYSICS, APPLIED 28/145 Q1 # |
|
|
Call Number |
UA @ lucian @ c:irua:15460 |
Serial |
2313 |
|
Permanent link to this record |
|
|
|
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
|
|
Title |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
|
|
|
Volume |
157 |
Issue |
|
Pages |
43-46 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
London |
Editor |
|
|
|
Language |
|
Wos |
000071954600006 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0305-2346 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
|
Impact Factor |
|
Times cited |
|
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:21428 |
Serial |
2318 |
|
Permanent link to this record |
|
|
|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. |
|
|
Title |
New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views |
Type |
A1 Journal article |
|
Year |
1997 |
Publication |
The journal of imaging science and technology |
Abbreviated Journal |
J Imaging Sci Techn |
|
|
Volume |
41 |
Issue |
|
Pages |
301-307 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Springfield, Va |
Editor |
|
|
|
Language |
|
Wos |
000077457600017 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1062-3701 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
0.348 |
Times cited |
1 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 0.348; 1997 IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:21346 |
Serial |
2324 |
|
Permanent link to this record |
|
|
|
|
Author |
Ignatova, V.A.; Lebedev, O.I.; Wätjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. |
|
|
Title |
Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation |
Type |
A1 Journal article |
|
Year |
2002 |
Publication |
Microchimica acta |
Abbreviated Journal |
Microchim Acta |
|
|
Volume |
139 |
Issue |
|
Pages |
77-81 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Wien |
Editor |
|
|
|
Language |
|
Wos |
000175560300012 |
Publication Date |
2003-03-05 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0026-3672;1436-5073; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
4.58 |
Times cited |
3 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 4.58; 2002 IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:38378 |
Serial |
2420 |
|
Permanent link to this record |
|
|
|
|
Author |
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. |
|
|
Title |
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Nuclear instruments and methods in physics research |
Abbreviated Journal |
Nucl Instrum Meth B |
|
|
Volume |
B112 |
Issue |
|
Pages |
133-138 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1996UW20100029 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.124 |
Times cited |
4 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:15453 |
Serial |
2423 |
|
Permanent link to this record |
|
|
|
|
Author |
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. |
|
|
Title |
On the interpretation of HREM images of partially ordered alloys |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
|
|
Volume |
60 |
Issue |
2 |
Pages |
265-282 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab |
|
|
Abstract |
The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order. |
|
|
Address |
|
|
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Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1995TZ14700008 |
Publication Date |
2002-07-25 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.436 |
Times cited |
20 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:13014 |
Serial |
2438 |
|
Permanent link to this record |
|
|
|
|
Author |
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
|
|
Title |
On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope |
Type |
A1 Journal article |
|
Year |
1998 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
Philos Mag A |
|
|
Volume |
77 |
Issue |
2 |
Pages |
423-435 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
London |
Editor |
|
|
|
Language |
|
Wos |
000071976400010 |
Publication Date |
0000-00-00 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0141-8610; 1364-2804 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
23 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: NA |
|
|
Call Number |
UA @ lucian @ c:irua:29671 |
Serial |
2440 |
|
Permanent link to this record |
|
|
|
|
Author |
Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. |
|
|
Title |
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon |
Type |
A1 Journal article |
|
Year |
2002 |
Publication |
Journal of physics : condensed matter
T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY |
Abbreviated Journal |
J Phys-Condens Mat |
|
|
Volume |
14 |
Issue |
48 |
Pages |
13185-13193 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon. |
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|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
London |
Editor |
|
|
|
Language |
|
Wos |
000180091100068 |
Publication Date |
2002-11-23 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0953-8984; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.649 |
Times cited |
3 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.649; 2002 IF: 1.775 |
|
|
Call Number |
UA @ lucian @ c:irua:103326 |
Serial |
2477 |
|
Permanent link to this record |
|
|
|
|
Author |
Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. |
|
|
Title |
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques |
Type |
A1 Journal article |
|
Year |
2002 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
|
|
Volume |
91 |
Issue |
4 |
Pages |
2493-2498 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics. |
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|
Address |
|
|
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Corporate Author |
|
Thesis |
|
|
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
|
Language |
|
Wos |
000173553800114 |
Publication Date |
2002-07-26 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.068 |
Times cited |
27 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 2.068; 2002 IF: 2.281 |
|
|
Call Number |
UA @ lucian @ c:irua:103372 |
Serial |
2542 |
|
Permanent link to this record |
|
|
|
|
Author |
Xu, T.; Wang, P.; Fang, P.; Kan, Y.; Chen, L.; Vleugels, J.; Van der Biest, O.; van Landuyt, J. |
|
|
Title |
Phase assembly and microstructure of CeO2-doped ZrO2 ceramics prepared by spark plasma sintering |
Type |
A1 Journal article |
|
Year |
2005 |
Publication |
Journal of the European Ceramic Society |
Abbreviated Journal |
J Eur Ceram Soc |
|
|
Volume |
25 |
Issue |
15 |
Pages |
3437-3442 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
CeO2-doped ZrO2, (8 mol%) starting powder was sintered by means of spark plasma sintering (SPS) at 1300 degrees C without holding time. The stability of the tetragonal ZrO2 phase in the Ce-ZrO2 ceramic sintered under strongly reducing conditions was investigated. The SPS sample consisted of monoclinic and tetragonal ZrO2 phase, with a volume ratio of two to one, as well as a trace amount of a Zr-Ce-O cubic solid solution phase. In contrast, the same powder sintered by hot-pressing in nitrogen at 1300 and 1500 degrees C for 1h showed no tetragonal ZrO2. Microstructural observation of the SPS ceramic by SEM and TEM revealed grains with and without twins. The reason for the appearance of the tetragonal phase in the SPS sample sintered under strongly reducing conditions is discussed. (c) 2004 Elsevier Ltd. All rights reserved. |
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|
Address |
|
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Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
Barking |
Editor |
|
|
|
Language |
|
Wos |
000232172100006 |
Publication Date |
2004-12-16 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0955-2219; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.411 |
Times cited |
13 |
Open Access |
|
|
|
Notes |
|
Approved |
Most recent IF: 3.411; 2005 IF: 1.567 |
|
|
Call Number |
UA @ lucian @ c:irua:104065 |
Serial |
2576 |
|
Permanent link to this record |
|
|
|
|
Author |
Van Tendeloo, G.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Verheijen, M.A.; van Loosdrecht, P.H.M.; Meijer, G. |
|
|
Title |
Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy |
Type |
A1 Journal article |
|
Year |
1992 |
Publication |
Journal of physical chemistry |
Abbreviated Journal |
|
|
|
Volume |
96 |
Issue |
|
Pages |
7424-7430 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Wos |
A1992JM58600054 |
Publication Date |
2005-03-15 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0022-3654;1541-5740; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
|
Times cited |
33 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:4101 |
Serial |
2594 |
|
Permanent link to this record |
|
|
|
|
Author |
Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. |
|
|
Title |
Photoelectric and electrical responses of several erbium silicide/silicon interfaces |
Type |
A1 Journal article |
|
Year |
1996 |
Publication |
Applied surface science
T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE |
Abbreviated Journal |
Appl Surf Sci |
|
|
Volume |
102 |
Issue |
|
Pages |
173-177 |
|
|
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
|
Abstract |
In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
|
|
Language |
|
Wos |
A1996VJ86100039 |
Publication Date |
2003-05-12 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0169-4332; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.711 |
Times cited |
3 |
Open Access |
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|
Notes |
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Approved |
no |
|
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Call Number |
UA @ lucian @ c:irua:104392 |
Serial |
2611 |
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Permanent link to this record |
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Author |
Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
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Title |
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Materials science and technology |
Abbreviated Journal |
Mater Sci Tech-Lond |
|
|
Volume |
11 |
Issue |
11 |
Pages |
1194-1202 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
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Abstract |
Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Inst Materials |
Place of Publication |
London |
Editor |
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Language |
|
Wos |
A1995TQ95100016 |
Publication Date |
2014-01-09 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0267-0836;1743-2847; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
0.995 |
Times cited |
7 |
Open Access |
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|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:95911 |
Serial |
2654 |
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Permanent link to this record |
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Author |
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; Mommaert, C.; Severne, G. |
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Title |
Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
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|
|
Volume |
67 |
Issue |
3 |
Pages |
745-756 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1993 |
Publication Date |
2007-07-08 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
|
Edition |
|
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ISSN |
0141-8610;1460-6992; |
ISBN |
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Additional Links |
UA library record; https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993; WoS full record; WoS citing articles |
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Impact Factor |
|
Times cited |
1 |
Open Access |
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|
|
Notes |
|
Approved |
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|
|
Call Number |
UA @ lucian @ c:irua:6783 |
Serial |
2808 |
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Permanent link to this record |
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Author |
Zhang, X.B.; Zhang, X.F.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
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Title |
The reciprocal space of carbon tubes: a detailed interpretation of the electron diffraction effects |
Type |
A1 Journal article |
|
Year |
1994 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
|
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Volume |
54 |
Issue |
|
Pages |
237-249 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1994PA59800016 |
Publication Date |
2002-10-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
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ISSN |
0304-3991; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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|
Impact Factor |
2.436 |
Times cited |
59 |
Open Access |
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|
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Notes |
|
Approved |
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|
Call Number |
UA @ lucian @ c:irua:10006 |
Serial |
2844 |
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Permanent link to this record |
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Author |
Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; |
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Title |
Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Applied surface science
T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE |
Abbreviated Journal |
Appl Surf Sci |
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Volume |
63 |
Issue |
1-4 |
Pages |
45-51 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1993KF03400009 |
Publication Date |
2002-10-16 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0169-4332; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.711 |
Times cited |
13 |
Open Access |
|
|
|
Notes |
|
Approved |
|
|
|
Call Number |
UA @ lucian @ c:irua:104539 |
Serial |
2932 |
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Permanent link to this record |