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Author Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. pdf  doi
openurl 
  Title Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures Type (down) A1 Journal article
  Year 2001 Publication Journal of the electrochemical society Abbreviated Journal J Electrochem Soc  
  Volume 148 Issue 11 Pages G597-G601  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000171653100038 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0013-4651; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.259 Times cited 13 Open Access  
  Notes Approved Most recent IF: 3.259; 2001 IF: 2.033  
  Call Number UA @ lucian @ c:irua:103394 Serial 1725  
Permanent link to this record
 
 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. doi  openurl
  Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type (down) A1 Journal article
  Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B  
  Volume 112 Issue 1-4 Pages 325-329  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos A1996UW20100069 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95886 Serial 1742  
Permanent link to this record
 
 
Author Teodorescu, V.S.; Mihailescu, I.N.; Dinescu, M.; Chitica, N.; Nistor, L.C.; van Landuyt, J.; Barborica, A. doi  openurl
  Title Laser induced phase transition in iron thin films Type (down) A1 Journal article
  Year 1994 Publication Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation Abbreviated Journal  
  Volume 4 Issue Pages 127-130  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Les Ulis Editor  
  Language Wos A1994NT08700028 Publication Date 2007-07-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 2 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10003 Serial 1787  
Permanent link to this record
 
 
Author Linssen, T.; Cool, P.; Baroudi, M.; Cassiers, K.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. doi  openurl
  Title Leached natural saponite as the silicate source in the synthesis of aluminosilicate hexagonal mesoporous materials Type (down) A1 Journal article
  Year 2002 Publication The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical Abbreviated Journal J Phys Chem B  
  Volume 106 Issue Pages 4470-4476  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language Wos 000175356900019 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1520-6106;1520-5207; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.177 Times cited 23 Open Access  
  Notes Approved Most recent IF: 3.177; 2002 IF: 3.611  
  Call Number UA @ lucian @ c:irua:46279 Serial 1811  
Permanent link to this record
 
 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; de Keyzer, R. doi  openurl
  Title Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals Type (down) A1 Journal article
  Year 1995 Publication Surface science : a journal devoted to the physics and chemistry of interfaces Abbreviated Journal Surf Sci  
  Volume 337 Issue Pages 153-165  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1995RQ74900024 Publication Date 2003-05-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.925 Times cited 10 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13162 Serial 1836  
Permanent link to this record
 
 
Author Volkov, V.V.; van Landuyt, J.; Marushkin, K.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. pdf  doi
openurl 
  Title LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas Type (down) A1 Journal article
  Year 1997 Publication Sensors and actuators : A : physical Abbreviated Journal Sensor Actuat A-Phys  
  Volume 62 Issue 1/3 Pages 624-632  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Highly effective IR light-emitting diodes operating at the wavelength 1.66 mu m and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/ In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM),electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CK, gas sensor has been developed and fabricated an the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested, It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2 x 1 km. (C) 1997 Elsevier Science S.A.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lausanne Editor  
  Language Wos A1997YD90600029 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0924-4247; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.499 Times cited 3 Open Access  
  Notes Approved Most recent IF: 2.499; 1997 IF: 0.635  
  Call Number UA @ lucian @ c:irua:20455 Serial 1855  
Permanent link to this record
 
 
Author Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. pdf  doi
openurl 
  Title Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions Type (down) A1 Journal article
  Year 2002 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 92 Issue 8 Pages 4336-4341  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000178318000024 Publication Date 2002-10-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 5 Open Access  
  Notes Approved Most recent IF: 2.068; 2002 IF: 2.281  
  Call Number UA @ lucian @ c:irua:39872 Serial 2005  
Permanent link to this record
 
 
Author Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H. pdf  doi
openurl 
  Title Microstructural characterization of diamond films deposited on c-BN crystals Type (down) A1 Journal article
  Year 2000 Publication Diamond and related materials T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC Abbreviated Journal Diam Relat Mater  
  Volume 9 Issue 3-6 Pages 269-273  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000087382400009 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.561 Times cited 9 Open Access  
  Notes Approved Most recent IF: 2.561; 2000 IF: 1.591  
  Call Number UA @ lucian @ c:irua:102877 Serial 2041  
Permanent link to this record
 
 
Author Bernaerts, D.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. openurl 
  Title Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1 Type (down) A1 Journal article
  Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 172 Issue Pages 433-439  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1997WL65300019 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 23 Open Access  
  Notes Approved Most recent IF: 1.751; 1997 IF: 1.259  
  Call Number UA @ lucian @ c:irua:21405 Serial 2051  
Permanent link to this record
 
 
Author Nistor, L.C.; Nistor, S.V.; Dinca, G.; Georgeoni, P.; van Landuyt, J.; Manfredotti, C.; Vittone, E. pdf  url
doi  openurl
  Title Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions Type (down) A1 Journal article
  Year 2002 Publication Journal of physics : condensed matter Abbreviated Journal J Phys-Condens Mat  
  Volume 14 Issue 44 Pages 10983-10988  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp(3) bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 +/- 15 mJ m(-2) is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000179541700114 Publication Date 2002-10-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-8984; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.649 Times cited 7 Open Access  
  Notes Approved Most recent IF: 2.649; 2002 IF: 1.775  
  Call Number UA @ lucian @ c:irua:103328 Serial 2061  
Permanent link to this record
 
 
Author Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. openurl 
  Title Microstructure of Mn-doped, spin-cast FeSi2 Type (down) A1 Journal article
  Year 1997 Publication Journal of electron microscopy Abbreviated Journal Microscopy-Jpn  
  Volume 46 Issue 3 Pages 221-225  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Tokyo Editor  
  Language Wos A1997XP43400004 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0744; 1477-9986 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.9 Times cited 3 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21410 Serial 2070  
Permanent link to this record
 
 
Author Chen, J.H.; van Dyck, D.; op de Beeck, M.; Broeckx, J.; van Landuyt, J. pdf  doi
openurl 
  Title Modification of the multislice method for calculating coherent STEM images Type (down) A1 Journal article
  Year 1995 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 150 Issue Pages 13-22  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1995RQ21500002 Publication Date 2007-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 5 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13292 Serial 2159  
Permanent link to this record
 
 
Author Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. openurl 
  Title Morphology and defects in shallow trench isolation structures Type (down) A1 Journal article
  Year 1999 Publication Conference series of the Institute of Physics Abbreviated Journal  
  Volume 164 Issue Pages 443-446  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000166835300094 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 1 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29690 Serial 2206  
Permanent link to this record
 
 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Smolin, A.A. openurl 
  Title Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization Type (down) A1 Journal article
  Year 1997 Publication Diamond and related materials Abbreviated Journal Diam Relat Mater  
  Volume 6 Issue Pages 159-168  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1997WN37300021 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-9635 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.561 Times cited 116 Open Access  
  Notes Approved Most recent IF: 2.561; 1997 IF: 1.758  
  Call Number UA @ lucian @ c:irua:21406 Serial 2249  
Permanent link to this record
 
 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Kaltsas, G.; Travlos, A.; Nassiopoulos, A.G. openurl 
  Title New erbium silicide superstructures: a study by high resolution electron microscopy Type (down) A1 Journal article
  Year 1996 Publication Physica status solidi: A: applied research Abbreviated Journal  
  Volume 158 Issue Pages 107-116  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos A1996VY72800013 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8965 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 6 Open Access  
  Notes Approved PHYSICS, APPLIED 28/145 Q1 #  
  Call Number UA @ lucian @ c:irua:15460 Serial 2313  
Permanent link to this record
 
 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. openurl 
  Title New intermediate defect configuration in Si studied by in situ HREM irradiation Type (down) A1 Journal article
  Year 1997 Publication Conference series of the Institute of Physics Abbreviated Journal  
  Volume 157 Issue Pages 43-46  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000071954600006 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0305-2346 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:21428 Serial 2318  
Permanent link to this record
 
 
Author Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. openurl 
  Title New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views Type (down) A1 Journal article
  Year 1997 Publication The journal of imaging science and technology Abbreviated Journal J Imaging Sci Techn  
  Volume 41 Issue Pages 301-307  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Springfield, Va Editor  
  Language Wos 000077457600017 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1062-3701 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.348 Times cited 1 Open Access  
  Notes Approved Most recent IF: 0.348; 1997 IF: NA  
  Call Number UA @ lucian @ c:irua:21346 Serial 2324  
Permanent link to this record
 
 
Author Ignatova, V.A.; Lebedev, O.I.; Wätjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. doi  openurl
  Title Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation Type (down) A1 Journal article
  Year 2002 Publication Microchimica acta Abbreviated Journal Microchim Acta  
  Volume 139 Issue Pages 77-81  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Wien Editor  
  Language Wos 000175560300012 Publication Date 2003-03-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0026-3672;1436-5073; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.58 Times cited 3 Open Access  
  Notes Approved Most recent IF: 4.58; 2002 IF: NA  
  Call Number UA @ lucian @ c:irua:38378 Serial 2420  
Permanent link to this record
 
 
Author Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. doi  openurl
  Title Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope Type (down) A1 Journal article
  Year 1996 Publication Nuclear instruments and methods in physics research Abbreviated Journal Nucl Instrum Meth B  
  Volume B112 Issue Pages 133-138  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996UW20100029 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.124 Times cited 4 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15453 Serial 2423  
Permanent link to this record
 
 
Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; van Dyck, D. pdf  doi
openurl 
  Title On the interpretation of HREM images of partially ordered alloys Type (down) A1 Journal article
  Year 1995 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 60 Issue 2 Pages 265-282  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1995TZ14700008 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.436 Times cited 20 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:13014 Serial 2438  
Permanent link to this record
 
 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. openurl 
  Title On the mechanism of {111}-defect formation in silicon studies by in situ electrin irradiation in a high resolution electron microscope Type (down) A1 Journal article
  Year 1998 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal Philos Mag A  
  Volume 77 Issue 2 Pages 423-435  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000071976400010 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-8610; 1364-2804 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 23 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29671 Serial 2440  
Permanent link to this record
 
 
Author Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. pdf  url
doi  openurl
  Title Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon Type (down) A1 Journal article
  Year 2002 Publication Journal of physics : condensed matter T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY Abbreviated Journal J Phys-Condens Mat  
  Volume 14 Issue 48 Pages 13185-13193  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000180091100068 Publication Date 2002-11-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-8984; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.649 Times cited 3 Open Access  
  Notes Approved Most recent IF: 2.649; 2002 IF: 1.775  
  Call Number UA @ lucian @ c:irua:103326 Serial 2477  
Permanent link to this record
 
 
Author Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. pdf  doi
openurl 
  Title Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques Type (down) A1 Journal article
  Year 2002 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 91 Issue 4 Pages 2493-2498  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000173553800114 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 27 Open Access  
  Notes Approved Most recent IF: 2.068; 2002 IF: 2.281  
  Call Number UA @ lucian @ c:irua:103372 Serial 2542  
Permanent link to this record
 
 
Author Xu, T.; Wang, P.; Fang, P.; Kan, Y.; Chen, L.; Vleugels, J.; Van der Biest, O.; van Landuyt, J. doi  openurl
  Title Phase assembly and microstructure of CeO2-doped ZrO2 ceramics prepared by spark plasma sintering Type (down) A1 Journal article
  Year 2005 Publication Journal of the European Ceramic Society Abbreviated Journal J Eur Ceram Soc  
  Volume 25 Issue 15 Pages 3437-3442  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract CeO2-doped ZrO2, (8 mol%) starting powder was sintered by means of spark plasma sintering (SPS) at 1300 degrees C without holding time. The stability of the tetragonal ZrO2 phase in the Ce-ZrO2 ceramic sintered under strongly reducing conditions was investigated. The SPS sample consisted of monoclinic and tetragonal ZrO2 phase, with a volume ratio of two to one, as well as a trace amount of a Zr-Ce-O cubic solid solution phase. In contrast, the same powder sintered by hot-pressing in nitrogen at 1300 and 1500 degrees C for 1h showed no tetragonal ZrO2. Microstructural observation of the SPS ceramic by SEM and TEM revealed grains with and without twins. The reason for the appearance of the tetragonal phase in the SPS sample sintered under strongly reducing conditions is discussed. (c) 2004 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Barking Editor  
  Language Wos 000232172100006 Publication Date 2004-12-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0955-2219; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 13 Open Access  
  Notes Approved Most recent IF: 3.411; 2005 IF: 1.567  
  Call Number UA @ lucian @ c:irua:104065 Serial 2576  
Permanent link to this record
 
 
Author Van Tendeloo, G.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Verheijen, M.A.; van Loosdrecht, P.H.M.; Meijer, G. pdf  doi
openurl 
  Title Phase transitions in C60 and the related microstructure: a study by electron diffraction and electron microscopy Type (down) A1 Journal article
  Year 1992 Publication Journal of physical chemistry Abbreviated Journal  
  Volume 96 Issue Pages 7424-7430  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos A1992JM58600054 Publication Date 2005-03-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-3654;1541-5740; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 33 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:4101 Serial 2594  
Permanent link to this record
 
 
Author Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. pdf  doi
openurl 
  Title Photoelectric and electrical responses of several erbium silicide/silicon interfaces Type (down) A1 Journal article
  Year 1996 Publication Applied surface science T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE Abbreviated Journal Appl Surf Sci  
  Volume 102 Issue Pages 173-177  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1996VJ86100039 Publication Date 2003-05-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 3 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:104392 Serial 2611  
Permanent link to this record
 
 
Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. pdf  doi
openurl 
  Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type (down) A1 Journal article
  Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond  
  Volume 11 Issue 11 Pages 1194-1202  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.  
  Address  
  Corporate Author Thesis  
  Publisher Inst Materials Place of Publication London Editor  
  Language Wos A1995TQ95100016 Publication Date 2014-01-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.995 Times cited 7 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:95911 Serial 2654  
Permanent link to this record
 
 
Author De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; Mommaert, C.; Severne, G. pdf  doi
openurl 
  Title Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy Type (down) A1 Journal article
  Year 1993 Publication Philosophical magazine: A: physics of condensed matter: defects and mechanical properties Abbreviated Journal  
  Volume 67 Issue 3 Pages 745-756  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos A1993 Publication Date 2007-07-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0141-8610;1460-6992; ISBN Additional Links UA library record; https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993; WoS full record; WoS citing articles  
  Impact Factor Times cited 1 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:6783 Serial 2808  
Permanent link to this record
 
 
Author Zhang, X.B.; Zhang, X.F.; Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. doi  openurl
  Title The reciprocal space of carbon tubes: a detailed interpretation of the electron diffraction effects Type (down) A1 Journal article
  Year 1994 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 54 Issue Pages 237-249  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1994PA59800016 Publication Date 2002-10-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.436 Times cited 59 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:10006 Serial 2844  
Permanent link to this record
 
 
Author Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; pdf  doi
openurl 
  Title Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry Type (down) A1 Journal article
  Year 1993 Publication Applied surface science T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE Abbreviated Journal Appl Surf Sci  
  Volume 63 Issue 1-4 Pages 45-51  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.  
  Address  
  Corporate Author Thesis  
  Publisher Elsevier science bv Place of Publication Amsterdam Editor  
  Language Wos A1993KF03400009 Publication Date 2002-10-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 13 Open Access  
  Notes Approved  
  Call Number UA @ lucian @ c:irua:104539 Serial 2932  
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