| |
Records |
Links |
|
Author |
Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. |
|
| |
Title  |
Characterization of nickel silicides using EELS-based methods |
Type |
A1 Journal article |
| |
Year |
2010 |
Publication |
Journal of microscopy |
Abbreviated Journal |
J Microsc-Oxford |
|
| |
Volume |
240 |
Issue |
1 |
Pages |
75-82 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
The characterization of Ni-silicides using electron energy loss spectroscopy (EELS) based methods is discussed. A series of Ni-silicide phases is examined: Ni3Si, Ni31Si12, Ni2Si, NiSi and NiSi2. The composition of these phases is determined by quantitative core-loss EELS. A study of the low loss part of the EELS spectrum shows that both the energy and the shape of the plasmon peak are characteristic for each phase. Examination of the Ni-L edge energy loss near edge structure (ELNES) shows that the ratio and the sum of the L2 and L3 white line intensities are also characteristic for each phase. The sum of the white line intensities is used to determine the trend in electron occupation of the 3d states of the phases. The dependence of the plasmon energy on the electron occupation of the 3d states is demonstrated. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Oxford |
Editor |
|
|
| |
Language |
|
Wos |
000281715400009 |
Publication Date |
2010-05-20 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0022-2720; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
1.692 |
Times cited |
11 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 1.692; 2010 IF: 1.872 |
|
| |
Call Number |
UA @ lucian @ c:irua:84879 |
Serial |
329 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
|
| |
Title |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
Type |
A1 Journal article |
| |
Year |
2001 |
Publication |
Institute of physics conference series |
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
169 |
Pages |
481-484 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0-7503-0818-4 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:95163 |
Serial |
311 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Verbist, K.; Lebedev, O.I.; Van Tendeloo, G.; Tafuri, F.; Granozio, F.M.; Di Chiara, A.; Bender, H. |
|
| |
Title |
A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
|
| |
Volume |
74 |
Issue |
7 |
Pages |
1024-1026 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
A method to correlate microstructure from cross-section transmission electron microscopy (TEM) investigations and transport properties of a single well characterized high-T-c artificial grain boundary junction is reported. A YBa2Cu3O7-delta 45 degrees twist junction exhibiting the typical phenomenology of high T-c Josephson weak links was employed. The TEM sample preparation is based on focused ion beam etching and allows to easily localize the electron transparent area on a microbridge. The reported technique opens clear perspectives in the determination of the microstructural origin of variations in Josephson junction properties, such as the spread in I-c and IcRN values and the presence of different transport regimes in nominally identical junctions. (C) 1999 American Institute of Physics. [S0003-6951(99)03404-X]. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
|
| |
Language |
|
Wos |
000078571400043 |
Publication Date |
2002-07-26 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
3.411 |
Times cited |
5 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 3.411; 1999 IF: 4.184 |
|
| |
Call Number |
UA @ lucian @ c:irua:102912 |
Serial |
2686 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Nistor, L.C.; Richard, O.; Zhao, O.; Bender, H.; Stesmans, A.; Van Tendeloo, G. |
|
| |
Title |
A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films |
Type |
A1 Journal article |
| |
Year |
2003 |
Publication |
Institute of physics conference series
T2 – Microscopy of semiconducting materials |
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
|
Pages |
397-400 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
The thermal stability of amorphous Al2O3 films (similar to8 and 80 nut thick) deposited by atomic layer deposition on HF-last and thin SiO2 covered (001) Si substrates is studied by transmission electron microscopy. The layers are in- and ex-situ annealed in the same temperature range. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
Iop |
Place of Publication |
Cambridge |
Editor |
|
|
| |
Language |
|
Wos |
|
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0-7503-0979-2 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:54860 |
Serial |
2048 |
|
| Permanent link to this record |
