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“Investigation of 50 Hz pulsed DC nitrogen plasma with active screen cage by trace rare gas optical emission spectroscopy”. Saeed A, Khan AW, Shafiq M, Jan F, Abrar M, Zaka-ul-Islam M, Zakaullah M, Plasma science &, technology 16, 324 (2014). http://doi.org/10.1088/1009-0630/16/4/05
Abstract: Optical emission spectroscopy is used to investigate the nitrogen-hydrogen with trace rare gas (4% Ar) plasma generated by 50 Hz pulsed DC discharges. The filling pressure varies from 1 mbar to 5 mbar and the current density ranges from 1 mA.cm(-2) to 4 mA.cm(-2). The hydrogen concentration in the mixture plasma varies from 0% to 80%, with the objective of identifying the optimum pressure, current density and hydrogen concentration for active species ([N] and [N-2]) generation. It is observed that in an N-2-H-2 gas mixture, the concentration of N atom density decreases with filling pressure and increases with current density, with other parameters of the discharge kept unchanged. The maximum concentrations of active species were found for 40% H-2 in the mixture at 3 mbar pressure and current density of 4 mA.cm(-2).
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 0.83
Times cited: 5
DOI: 10.1088/1009-0630/16/4/05
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“Macroscale computer simulations to investigate the chemical vapor deposition of thin metal-oxide films”. Neyts E, Bogaerts A, de Meyer M, van Gils S, Surface and coatings technology 201, 8838 (2007). http://doi.org/10.1016/j.surfcoat.2007.04.102
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.589
Times cited: 5
DOI: 10.1016/j.surfcoat.2007.04.102
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“Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions”. Ignatova VA, Lebedev OI, Watjen U, van Vaeck L, van Landuyt J, Gijbels R, Adams F, Journal of applied physics 92, 4336 (2002). http://doi.org/10.1063/1.1508425
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 5
DOI: 10.1063/1.1508425
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“Modeling SiH4/O2/Ar inductively coupled plasmas used for filling of microtrenches in shallow trench isolation (STI)”. Tinck S, Bogaerts A, Plasma processes and polymers 9, 522 (2012). http://doi.org/10.1002/ppap.201100093
Abstract: Modeling results are presented to gain a better insight in the properties of a SiH4/O2/Ar inductively coupled plasma (ICP) and how it interacts with a silicon substrate (wafer), as applied in the microelectronics industry for the fabrication of electronic devices. The SiH4/O2/Ar ICP is used for the filling of microtrenches with isolating material (SiO2), as applied in shallow trench isolation (STI). In this article, a detailed reaction set that describes the plasma chemistry of SiH4/O2/Ar discharges as well as surface processes, such as sputtering, oxidation, and deposition, is presented. Results are presented on the plasma properties during the plasma enhanced chemical vapor deposition process (PECVD) for different gas ratios, as well as on the shape of the filled trenches and the surface compositions of the deposited layers. For the operating conditions under study it is found that the most important species accounting for deposition are SiH2, SiH3O, SiH3 and SiH2O, while SiH+2, SiH+3, O+2 and Ar+ are the dominant species for sputtering of the surface. By diluting the precursor gas (SiH4) in the mixture, the deposition rate versus sputtering rate can be controlled for a desired trench filling process. From the calculation results it is clear that a high deposition rate will result in undesired void formation during the trench filling, while a small deposition rate will result in undesired trench bottom and mask damage by sputtering. By varying the SiH4/O2 ratio, the chemical composition of the deposited layer will be influenced. However, even at the highest SiH4/O2 ratio investigated (i.e., 3.2:1; low oxygen content), the bulk deposited layer consists mainly of SiO2, suggesting that low-volatile silane species deposit first and subsequently become oxidized instead of being oxidized first in the plasma before deposition. Finally, it was found that the top surface of the deposited layer contained less oxygen due to preferential sputtering of O atoms, making the top layer more Si-rich. However, this effect is negligible at a SiH4/O2 ratio of 2:1 or lower.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.846
Times cited: 5
DOI: 10.1002/ppap.201100093
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“Monte Carlo method for simulations of adsorbed atom diffusion on a surface”. Liu YH, Neyts E, Bogaerts A, Diamond and related materials 15, 1629 (2006). http://doi.org/10.1016/j.diamond.2006.01.012
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.561
Times cited: 5
DOI: 10.1016/j.diamond.2006.01.012
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“Observation of exciton states in silver halide nanoparticles by cryo-electron spectroscopic imaging and electron energy-loss spectroscopy”. Oleshko VP, Brichkin SB, Gijbels R, Jacob WA, Razumov VF, Mendeleev communications 7, 213 (1997)
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.741
Times cited: 5
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“Recent trends in solids mass spectrometry: GDMS and other methods”. Gijbels R, Bogaerts A, Fresenius' journal of analytical chemistry 359, 326 (1997). http://doi.org/10.1007/s002160050581
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 5
DOI: 10.1007/s002160050581
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“Ruthenocene and cyclopentadienyl pyrrolyl ruthenium as precursors for ruthenium atomic layer deposition : a comparative study of dissociation enthalpies”. Phung QM, Vancoillie S, Delabie A, Pourtois G, Pierloot K, Theoretical chemistry accounts : theory, computation, and modeling 131, 1238 (2012). http://doi.org/10.1007/s00214-012-1238-3
Abstract: RuCp2 (ruthenocene) and RuCpPy (cyclopentadienyl pyrrolyl ruthenium) complexes are used in ruthenium (Ru) atomic layer deposition (ALD) but exhibit a markedly different reactivity with respect to the substrate and co-reactant. In search of an explanation, we report here the results of a comparative study of the heterolytic and homolytic dissociation enthalpy of these two ruthenium complexes, making use of either density functional theory (DFT) or multiconfigurational perturbation theory (CASPT2). While both methods predict distinctly different absolute dissociation enthalpies, they agree on the relative values between both molecules. A reduced heterolytic dissociation enthalpy is obtained for RuCpPy compared to RuCp2, although the difference obtained from CASPT2 (19.9 kcal/mol) is slightly larger than the one obtained with any of the DFT functionals (around 17 kcal/mol). Both methods also agree on the more pronounced stability of the Cp- ligand in RuCpPy than in RuCp2 (by around 9 kcal/mol with DFT and by 6 kcal/mol with CASPT2).
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.89
Times cited: 5
DOI: 10.1007/s00214-012-1238-3
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“Simultaneous etching and deposition processes during the etching of silicon with a Cl2/O2/Ar inductively coupled plasma”. Tinck S, Bogaerts A, Shamiryan D, Plasma processes and polymers 8, 490 (2011). http://doi.org/10.1002/ppap.201000189
Abstract: In this article, surface processes occurring during the etching of Si with a Cl2/O2/Ar plasma are investigated by means of experiments and modeling. Cl2-based plasmas are commonly used to etch silicon, while a small fraction of O2 is added to protect the sidewalls from lateral etching during the shallow trench isolation process. When the oxygen fraction exceeds a critical value, the wafer surface process changes from an etching regime to a deposition regime, drastically reducing the etch rate. This effect is commonly referred to as the etch stop phenomenon. To gain better understanding of this mechanism, the oxygen fraction is varied in the gas mixture and special attention is paid to the effects of oxygen and of the redeposition of non-volatile etched species on the overall etch/deposition process. It is found that, when the O2 flow is increased, the etch process changes from successful etching to the formation of a rough surface, and eventually to the actual growth of an oxide layer which completely blocks the etching of the underlying Si. The size of this etch stop island was found to increase as a function of oxygen flow, while its thickness was dependent on the amount of Si etched. This suggests that the growth of the oxide layer mainly depends on the redeposition of non-volatile etch products. The abrupt change in the etch rate as a function of oxygen fraction was not found back in the oxygen content of the plasma, suggesting the competitive nature between oxidation and chlorination at the wafer. Finally, the wafer and reactor wall compositions were investigated by modeling and it was found that the surface rapidly consisted mainly of SiO2 when the O2 flow was increased above about 15 sccm.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.846
Times cited: 5
DOI: 10.1002/ppap.201000189
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“Structural and analytical characterization of Ag(Br,I) nanocrystals by cryo-AEM techniques”. Oleshko VP, van Daele A, Gijbels RH, Jacob WA, Journal of nanostructured materials 10, 1225 (1998). http://doi.org/10.1016/S0965-9773(99)00003-3
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 5
DOI: 10.1016/S0965-9773(99)00003-3
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“Computational study of the CF4 /CHF3 / H2 /Cl2 /O2 /HBr gas phase plasma chemistry”. Tinck S, Bogaerts A, Journal of physics: D: applied physics 49, 195203 (2016). http://doi.org/10.1088/0022-3727/49/19/195203
Abstract: A modelling study is performed of high-density low-pressure inductively coupled CF4/CHF3/H2/Cl2/O2/HBr plasmas under different gas mixing ratios. A reaction set describing the complete plasma chemistry is presented and discussed. The gas fraction of each component in this mixture is varied to investigate the sensitivity of the plasma properties, like electron density, plasma potential and species densities, towards the gas mixing ratios. This research is of great interest for microelectronics applications because these gases are often combined in two (or more)-component mixtures, and mixing gases or changing the fraction of a gas can sometimes yield unwanted reaction products or unexpected changes in the overall plasma properties due to the increased chemical complexity of the system. Increasing the CF4 fraction produces more F atoms for chemical etching as expected, but also more prominently lowers the density of Cl atoms, resulting in an actual drop in the etch rate under certain conditions. Furthermore, CF4 decreases the free electron density when mixed with Cl2. However, depending on the other gas components, CF4 gas can also sometimes enhance free electron density. This is the case when HBr is added to the mixture. The addition of H2 to the gas mixture will lower the sputtering process, not only due to the lower overall positive ion density at higher H2 fractions, but also because more H+, H2 + and H3 + are present and they have very low sputter yields. In contrast, a larger Cl2 fraction results in more chemical etching but also in less physical sputtering due to a smaller abundance of positive ions. Increasing the O2 fraction in the plasma will always lower the etch rate due to more oxidation of the wafer surface and due to a lower plasma density. However, it is also observed that the density of F atoms can actually increase with rising O2 gas fraction. This is relevant to note because the exact balance between fluorination and oxidation is important for fine-tuning the overall etch rate and for control of the sidewall profile. Finally, HBr is often used as a chemical etcher, but when mixed with F- or Cl-containing gases, HBr creates the same diluting effects as Ar or He, because a
higher fraction results in less chemical etching but more (physical) sputtering.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.588
Times cited: 5
DOI: 10.1088/0022-3727/49/19/195203
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“Mechanisms of Peptide Oxidation by Hydroxyl Radicals: Insight at the Molecular Scale”. Verlackt CCW, Van Boxem W, Dewaele D, Lemière F, Sobott F, Benedikt J, Neyts EC, Bogaerts A, The journal of physical chemistry: C : nanomaterials and interfaces 121, 5787 (2017). http://doi.org/10.1021/acs.jpcc.6b12278
Abstract: Molecular dynamics (MD) simulations were performed to provide atomic scale insight in the initial interaction between hydroxyl radicals (OH) and peptide systems in solution. These OH radicals are representative reactive oxygen species produced by cold atmospheric plasmas. The use of plasma for biomedical applications is gaining increasing interest, but the fundamental mechanisms behind the plasma modifications still remain largely elusive. This study helps to gain more insight in the underlying mechanisms of plasma medicine but is also more generally applicable to peptide oxidation, of interest for other applications. Combining both reactive and nonreactive MD simulations, we are able to elucidate the reactivity of the amino acids inside the peptide systems and their effect on their structure up to 1 μs. Additionally, experiments were performed, treating the simulated peptides with a plasma jet. The computational results presented here correlate well with the obtained experimental data and highlight the importance of the chemical environment for the reactivity of the individual amino acids, so that specific amino acids are attacked in higher numbers than expected. Furthermore, the long time scale simulations suggest that a single oxidation has an effect on the 3D conformation due to an increase in hydrophilicity and intra- and intermolecular interactions.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.536
Times cited: 5
DOI: 10.1021/acs.jpcc.6b12278
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“Toward the Understanding of Selective Si Nano-Oxidation by Atomic Scale Simulations”. Khalilov U, Bogaerts A, Neyts EC, Accounts of chemical research 50, 796 (2017). http://doi.org/10.1021/acs.accounts.6b00564
Abstract: The continuous miniaturization of nanodevices, such as transistors, solar cells, and optical fibers, requires the controlled synthesis of (ultra)thin gate oxides (<10 nm), including Si gate-oxide (SiO2) with high quality at the atomic scale. Traditional thermal growth of SiO2 on planar Si surfaces, however, does not allow one to obtain such ultrathin oxide due to either the high oxygen diffusivity at high temperature or the very low sticking ability of incident oxygen at low temperature. Two recent techniques, both operative at low (room) temperature, have been put forward to overcome these obstacles: (i) hyperthermal oxidation of planar Si surfaces and (ii) thermal or plasma-assisted oxidation of nonplanar Si surfaces, including Si nanowires (SiNWs). These nanooxidation processes are, however, often difficult to study experimentally, due to the key intermediate processes taking place on the nanosecond time scale.
In this Account, these Si nano-oxidation techniques are discussed from a computational point of view and compared to both hyperthermal and thermal oxidation experiments, as well as to well-known models of thermal oxidation, including the Deal−Grove, Cabrera−Mott, and Kao models and several alternative mechanisms. In our studies, we use reactive molecular dynamics (MD) and hybrid MD/Monte Carlo simulation techniques, applying the Reax force field. The incident energy of oxygen species is chosen in the range of 1−5 eV in hyperthermal oxidation of planar Si surfaces in order to prevent energy-induced damage. It turns out that hyperthermal growth allows for two growth modes, where the ultrathin oxide thickness depends on either (1) only the kinetic energy of the incident oxygen species at a growth temperature below Ttrans = 600 K, or (2) both the incident energy and the growth temperature at a growth temperature above Ttrans. These modes are specific to such ultrathin oxides, and are not observed in traditional thermal oxidation, nor theoretically considered by already existing models. In the case of thermal or plasma-assisted oxidation of small Si nanowires, on the other hand, the thickness of the ultrathin oxide is a function of the growth temperature and the nanowire diameter. Below Ttrans, which varies with the nanowire diameter, partially oxidized SiNW are formed, whereas complete oxidation to a SiO2 nanowire occurs only above Ttrans. In both nano-oxidation processes at lower temperature (T < Ttrans), final sandwich c-Si|SiOx|a-SiO2 structures are obtained due to a competition between overcoming the energy barrier to penetrate into Si subsurface layers and the compressive stress (∼2−3 GPa) at the Si crystal/oxide interface. The overall atomic-simulation results strongly indicate that the thickness of the intermediate SiOx (x < 2) region is very limited (∼0.5 nm) and constant irrespective of oxidation parameters. Thus, control over the ultrathin SiO2 thickness with good quality is indeed possible by accurately tuning the oxidant energy, oxidation temperature and surface curvature.
In general, we discuss and put in perspective these two oxidation mechanisms for obtaining controllable ultrathin gate-oxide films, offering a new route toward the fabrication of nanodevices via selective nano-oxidation.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 20.268
Times cited: 5
DOI: 10.1021/acs.accounts.6b00564
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“Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor”. de de Meux AJ, Pourtois G, Genoe J, Heremans P, Journal of physics : condensed matter 29, 255702 (2017). http://doi.org/10.1088/1361-648X/AA608C
Abstract: In this paper, we show that the apparent delocalization of the conduction band reported from first-principles simulations for the high-mobility amorphous oxide semiconductor InGaZnO4 (a-IGZO) is an artifact induced by the periodic conditions imposed to the model. Given a sufficiently large unit-cell dimension (over 40 angstrom), the conduction band becomes localized. Such a model size is up to four times the size of commonly used models for the study of a-IGZO. This finding challenges the analyses done so far on the nature of the defects and on the interpretation of numerous electrical measurements. In particular, we re-interpret the meaning of the computed effective mass reported so far in literature. Our finding also applies to materials such as SiZnSnO, ZnSnO, InZnSnO, In2O3 or InAlZnO4 whose models have been reported to display a fully delocalized conduction band in the amorphous phase.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.649
Times cited: 5
DOI: 10.1088/1361-648X/AA608C
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“Density functional theory study of interface interactions in hydroxyapatite/rutile composites for biomedical applications”. Grubova IY, Surmeneva MA, Huygh S, Surmenev RA, Neyts EC, The journal of physical chemistry: C : nanomaterials and interfaces 121, 15687 (2017). http://doi.org/10.1021/ACS.JPCC.7B02926
Abstract: To gain insight into the nature of the adhesion mechanism between hydroxyapatite (HA) and rutile (rTiO(2)), the mutual affinity between their surfaces was systematically studied using density functional theory (DFT). We calculated both bulk and surface properties of HA and rTiO(2), and explored the interfacial bonding mechanism of amorphous HA (aHA) surface onto amorphous as well as stoichiometric and nonstoichiometric crystalline rTiO(2). Formation energies of bridging and subbridging oxygen vacancies considered in the rTiO(2)(110) surface were evaluated and compared with other theoretical and experimental results. The interfacial interaction was evaluated through the work of adhesion. For the aHA/rTiO(2)(110) interfaces, the work of adhesion is found to depend strongly on the chemical environment of the rTiO(2)(110) surface. Electronic analysis indicates that the charge transfer is very small in the case of interface formation between aHA and crystalline rTiO(2)(110). In contrast, significant charge transfer occurs between aHA and amorphous rTiO(2) (aTiO(2)) slabs during the formation of the interface. Charge density difference (CDD) analysis indicates that the dominant interactions in the interface have significant covalent character, and in particular the Ti-O and Ca-O bonds. Thus, the obtained results reveal that the aHA/aTiO(2) interface shows a more preferable interaction and is thermodynamically more stable than other interfaces. These results are particularly important for improving the long-term stability of HA-based implants.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.536
Times cited: 5
DOI: 10.1021/ACS.JPCC.7B02926
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“Synthesis and in vitro investigation of halogenated 1,3-bis(4-nitrophenyl)triazenide salts as antitubercular compounds”. Torfs E, Vajs J, Bidart de Macedo M, Cools F, Vanhoutte B, Gorbanev Y, Bogaerts A, Verschaeve L, Caljon G, Maes L, Delputte P, Cos P, Komrlj J, Cappoen D, Chemical biology and drug design , 1 (2017). http://doi.org/10.1111/CBDD.13087
Abstract: The diverse pharmacological properties of the diaryltriazenes have sparked the interest to investigate their potential to be repurposed as antitubercular drug candidates. In an attempt to improve the antitubercular activity of a previously constructed diaryltriazene library, eight new halogenated nitroaromatic triazenides were synthesized and underwent biological evaluation. The potency of the series was confirmed against the Mycobacterium tuberculosis lab strain H37Ra, and for the most potent derivative, we observed a minimal inhibitory concentration of 0.85 μm. The potency of the triazenide derivatives against M. tuberculosis H37Ra was found to be highly dependent on the nature of the halogenated phenyl substituent and less dependent on cationic species used for the preparation of the salts. Although the inhibitory concentration against J774A.1 macrophages was observed at 3.08 μm, the cellular toxicity was not mediated by the generation of nitroxide intermediate as confirmed by electron paramagnetic resonance spectroscopy, whereas no in vitro mutagenicity could be observed for the new halogenated nitroaromatic triazenides when a trifluoromethyl substituent was present on both the aryl moieties.
Keywords: A1 Journal article; Pharmacology. Therapy; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.396
Times cited: 5
DOI: 10.1111/CBDD.13087
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“Atomistic simulations of plasma catalytic processes”. Neyts EC, Frontiers of Chemical Science and Engineering 12, 145 (2018). http://doi.org/10.1007/S11705-017-1674-7
Abstract: There is currently a growing interest in the realisation and optimization of hybrid plasma/catalyst systems for a multitude of applications, ranging from nanotechnology to environmental chemistry. In spite of this interest, there is, however, a lack in fundamental understanding of the underlying processes in such systems. While a lot of experimental research is already being carried out to gain this understanding, only recently the first simulations have appeared in the literature. In this contribution, an overview is presented on atomic scale simulations of plasma catalytic processes as carried out in our group. In particular, this contribution focusses on plasma-assisted catalyzed carbon nanostructure growth, and plasma catalysis for greenhouse gas conversion. Attention is paid to what can routinely be done, and where challenges persist.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.712
Times cited: 5
DOI: 10.1007/S11705-017-1674-7
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“Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures”. Loo R, Arimura H, Cott D, Witters L, Pourtois G, Schulze A, Douhard B, Vanherle W, Eneman G, Richard O, Favia P, Mitard J, Mocuta D, Langer R, Collaert N, ECS journal of solid state science and technology 7, P66 (2018). http://doi.org/10.1149/2.0191802JSS
Abstract: Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET and Gate All Around devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions. (C) The Author(s) 2018. Published by ECS.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.787
Times cited: 5
DOI: 10.1149/2.0191802JSS
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“Supersonic Microwave Plasma: Potential and Limitations for Energy-Efficient CO2Conversion”. Vermeiren V, Bogaerts A, Journal Of Physical Chemistry C 122, 25869 (2018). http://doi.org/10.1021/acs.jpcc.8b08498
Abstract: Supersonic flows provide a high thermodynamic
nonequilibrium, which is crucial for energy-efficient conversion of
CO 2 in microwave plasmas and are therefore of great interest.
However, the effect of the flow on the chemical reactions is poorly
understood. In this work, we present a combined flow and plasma
chemical kinetics model of a microwave CO 2 plasma in a Laval
nozzle setup. The effects of the flow field on the different dissociation
and recombination mechanisms, the vibrational distribution, and the
vibrational transfer mechanism are discussed. In addition, the effect
of experimental parameters, like position of power deposition, outlet
pressure, and specific energy input, on the CO 2 conversion and
energy efficiency is examined. The short residence time of the gas in
the plasma region, the shockwave, and the maximum critical heat,
and thus power, that can be added to the flow to avoid thermal
choking are the main obstacles to reaching high energy efficiencies.
Keywords: A1 Journal Article; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ;
Impact Factor: 4.536
Times cited: 5
DOI: 10.1021/acs.jpcc.8b08498
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“Impact of the Particle Diameter on Ion Cloud Formation from Gold Nanoparticles in ICPMS”. Fuchs J, Aghaei M, Schachel TD, Sperling M, Bogaerts A, Karst U, Analytical chemistry 90, 10271 (2018). http://doi.org/10.1021/acs.analchem.8b02007
Abstract: The unique capabilities of microsecond dwell time (DT) single-particle inductively coupled plasma mass spectrometry (spICPMS) were utilized to characterize the cloud of ions generated from the introduction of suspensions of gold nanoparticles (AuNPs) into the plasma. A set of narrowly distributed particles with diameters ranging from 15.4 to 100.1 nm was synthesized and characterized according to established protocols. Statistically significant numbers of the short transient spICPMS events were evaluated by using 50 μs DT for their summed intensity, maximum intensity, and duration, of which all three were found to depend on the particle diameter. The summed intensity increases from 10 to 1661 counts and the maximum intensity from 6 to 309 counts for AuNPs with diameters from 15.4 to 83.2 nm. The event duration rises from 322 to 1007 μs upon increasing AuNP diameter. These numbers represent a comprehensive set of key data points of the ion clouds generated in ICPMS from AuNPs. The extension of event duration is of high interest to appoint the maximum possible particle number concentration at which separation of consecutive events in spICPMS can still be achieved. Moreover, the combined evaluation of all above-mentioned ion cloud characteristics can explain the regularly observed prolonged single-particle events. The transport and ionization behavior of AuNPs in the ICP was also computationally modeled to gain insight into the size-dependent signal generation. The simulated data reveals that the plasma temperature, and therefore the point of ionization of the particles, is the same for all diameters. However, the maximum number density of Au+, as well as the extent of the ion cloud, depends on the particle diameter, in agreement with the experimental data, and it provides an adequate explanation for the observed ion cloud characteristics.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 6.32
Times cited: 5
DOI: 10.1021/acs.analchem.8b02007
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“Overcoming Old Scaling Relations and Establishing New Correlations in Catalytic Surface Chemistry: Combined Effect of Charging and Doping”. Bal KM, Neyts EC, The journal of physical chemistry: C : nanomaterials and interfaces 123, 6141 (2019). http://doi.org/10.1021/acs.jpcc.9b01216
Abstract: Optimization of catalytic materials for a given application is greatly constrained by linear scaling relations. Recently, however, it has been demonstrated that it is possible to reversibly modulate the chemisorption of molecules on nanomaterials by charging (i.e., injection or removal of electrons) and hence reversibly and selectively modify catalytic activity beyond structure−activity correlations. The fundamental physical relation between the properties of the material, the charging process, and the chemisorption energy, however, remains unclear, and a systematic exploration and optimization of charge-switchable sorbent materials is not yet possible. Using hybrid DFT calculations of CO2 chemisorption on hexagonal boron nitride nanosheets with several types of defects and dopants, we here reveal the existence of fundamental correlations between the electron affinity of a material and charge-induced chemisorption, show how defect engineering can be used to modulate the strength and efficiency of the adsorption process, and demonstrate that excess electrons stabilize many topological defects. We then show how these insights could be exploited in the development of new electrocatalytic materials and the synthesis of doped nanomaterials. Moreover, we demonstrate that calculated chemical properties of charged materials are highly sensitive to the employed computational methodology because of the self-interaction error, which underlines the theoretical challenge posed by such systems.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.536
Times cited: 5
DOI: 10.1021/acs.jpcc.9b01216
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“Plasma for cancer treatment: How can RONS penetrate through the cell membrane? Answers from computer modeling”. Bogaerts A, Yusupov M, Razzokov J, Van der Paal J, Frontiers of Chemical Science and Engineering (2019). http://doi.org/10.1007/s11705-018-1786-8
Abstract: Plasma is gaining increasing interest for cancer
treatment, but the underlying mechanisms are not yet fully
understood. Using computer simulations at the molecular
level, we try to gain better insight in how plasma-generated
reactive oxygen and nitrogen species (RONS) can
penetrate through the cell membrane. Specifically, we
compare the permeability of various (hydrophilic and
hydrophobic) RONS across both oxidized and nonoxidized cell membranes. We also study pore formation,
and how it is hampered by higher concentrations of
cholesterol in the cell membrane, and we illustrate the
much higher permeability of H2O2 through aquaporin
channels. Both mechanisms may explain the selective
cytotoxic effect of plasma towards cancer cells. Finally, we
also discuss the synergistic effect of plasma-induced
oxidation and electric fields towards pore formation.
Keywords plasma medicine, cancer treatment, computer
modelling, cell membrane, reactive oxygen and nitrogen
species
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.712
Times cited: 5
DOI: 10.1007/s11705-018-1786-8
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“Transport of Reactive Oxygen and Nitrogen Species across Aquaporin: A Molecular Level Picture”. Yusupov M, Razzokov J, Cordeiro RM, Bogaerts A, Oxidative medicine and cellular longevity 2019, 1 (2019). http://doi.org/10.1155/2019/2930504
Abstract: Aquaporins (AQPs) are transmembrane proteins that conduct not only water molecules across the cell membrane but also other solutes, such as reactive oxygen and nitrogen species (RONS), produced (among others) by cold atmospheric plasma (CAP). These RONS may induce oxidative stress in the cell interior, which plays a role in cancer treatment. The underlying mechanisms of the transport of RONS across AQPs, however, still remain obscure. We apply molecular dynamics simulations to investigate the permeation of both hydrophilic (H<sub>2</sub>O<sub>2</sub>and OH) and hydrophobic (NO<sub>2</sub>and NO) RONS through AQP1. Our simulations show that these RONS can all penetrate across the pores of AQP1. The permeation free energy barrier of OH and NO is lower than that of H<sub>2</sub>O<sub>2</sub>and NO<sub>2</sub>, indicating that these radicals may have easier access to the pore interior and interact with the amino acid residues of AQP1. We also study the effect of RONS-induced oxidation of both the phospholipids and AQP1 (i.e., sulfenylation of Cys<sub>191</sub>) on the transport of the above-mentioned RONS across AQP1. Both lipid and protein oxidation seem to slightly increase the free energy barrier for H<sub>2</sub>O<sub>2</sub>and NO<sub>2</sub>permeation, while for OH and NO, we do not observe a strong effect of oxidation. The simulation results help to gain insight in the underlying mechanisms of the noticeable rise of CAP-induced RONS in cancer cells, thereby improving our understanding on the role of AQPs in the selective anticancer capacity of CAP.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.593
Times cited: 5
DOI: 10.1155/2019/2930504
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“Oxidation destabilizes toxic amyloid beta peptide aggregation”. Razzokov J, Yusupov M, Bogaerts A, Scientific reports 9, 5476 (2019). http://doi.org/10.1038/s41598-019-41931-6
Abstract: The aggregation of insoluble amyloid beta (Aβ) peptides in the brain is known to trigger the onset of neurodegenerative diseases, such as Alzheimer’s disease. In spite of the massive number of investigations, the underlying mechanisms to destabilize the Aβ aggregates are still poorly understood. Some studies indicate the importance of oxidation to destabilize the Aβ aggregates. In particular, oxidation induced by cold atmospheric plasma (CAP) has demonstrated promising results in eliminating these toxic aggregates. In this paper, we investigate the effect of oxidation on the stability of an Aβ pentamer. By means of molecular dynamics simulations and umbrella sampling, we elucidate the conformational changes of Aβ pentamer in the presence of oxidized residues, and we estimate the dissociation free energy of the terminal peptide out of the pentamer form. The calculated dissociation free energy of the terminal peptide is also found to decrease with increasing oxidation. This indicates that Aβ pentamer aggregation becomes less favorable upon oxidation. Our study contributes to a better insight in one of the potential mechanisms for inhibition of toxic Aβ peptide aggregation, which is considered to be the main culprit to Alzheimer’s disease.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.259
Times cited: 5
DOI: 10.1038/s41598-019-41931-6
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“Evolution of phosphorus-vacancy clusters in epitaxial germanium”. Vohra A, Khanam A, Slotte J, Makkonen I, Pourtois G, Loo R, Vandervorst W, Journal of applied physics 125, 025701 (2019). http://doi.org/10.1063/1.5054996
Abstract: The E centers (dopant-vacancy pairs) play a significant role in dopant deactivation in semiconductors. In order to gain insight into dopant-defect interactions during epitaxial growth of in situ phosphorus doped Ge, positron annihilation spectroscopy, which is sensitive to open-volume defects, was performed on Ge layers grown by chemical vapor deposition with different concentrations of phosphorus (similar to 1 x 10(18)-1 x 10(20) cm(-3)). Experimental results supported by first-principles calculations based on the two component density-functional theory gave evidence for the existence of mono-vacancies decorated by several phosphorus atoms as the dominant defect type in the epitaxial Ge. The concentration of vacancies increases with the amount of P-doping. The number of P atoms around the vacancy also increases, depending on the P concentration. The evolution of P-n-V clusters in Ge contributes significantly to the dopant deactivation. Published under license by AIP Publishing.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.068
Times cited: 5
DOI: 10.1063/1.5054996
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“A 3D cell death assay to quantitatively determine ferroptosis in spheroids”. Demuynck R, Efimova I, Lin A, Declercq H, Krysko DV, Cells 9, 703 (2020). http://doi.org/10.3390/CELLS9030703
Abstract: The failure of drug efficacy in clinical trials remains a big issue in cancer research. This is largely due to the limitations of two-dimensional (2D) cell cultures, the most used tool in drug screening. Nowadays, three-dimensional (3D) cultures, including spheroids, are acknowledged to be a better model of the in vivo environment, but detailed cell death assays for 3D cultures (including those for ferroptosis) are scarce. In this work, we show that a new cell death analysis method, named 3D Cell Death Assay (3DELTA), can efficiently determine different cell death types including ferroptosis and quantitatively assess cell death in tumour spheroids. Our method uses Sytox dyes as a cell death marker and Triton X-100, which efficiently permeabilizes all cells in spheroids, was used to establish 100% cell death. After optimization of Sytox concentration, Triton X-100 concentration and timing, we showed that the 3DELTA method was able to detect signals from all cells without the need to disaggregate spheroids. Moreover, in this work we demonstrated that 2D experiments cannot be extrapolated to 3D cultures as 3D cultures are less sensitive to cell death induction. In conclusion, 3DELTA is a more cost-effective way to identify and measure cell death type in 3D cultures, including spheroids.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Times cited: 5
DOI: 10.3390/CELLS9030703
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“Capabilities and limitations of Fourier transform laser microprobe mass spectrometry for molecular analysis of solids”. Ignatova VA, van Vaeck L, Gijbels R, Adams F, Vacuum 69, 307 (2002). http://doi.org/10.1016/S0042-207X(02)00350-0
Abstract: Fourier transform laser microprobe mass spectrometry (FT LMMS) has been developed for the molecular analysis of both organic and inorganic components at the surface of microobjects with the ultimate specificity of high-mass resolution. These capabilities are needed in numerous applications of practical material analysis, such as tracing back anomalies in microobjects. The purpose of this paper is to address representative example from industrial trouble shooting, in which organic and inorganic analytes in a single microparticle have been identified unambiguously. This motivates the research to extend the methodology towards quantification. This paper deals with the fundamental aspect of information depth, specifically for inorganic molecular adduct ions. Finally, data will show the quantitative capabilities of FT LMMS. A suitable methodology for the preparation of reference specimens has allowed the empirical calibration of the response as a function of the local concentration to be achieved.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.53
Times cited: 4
DOI: 10.1016/S0042-207X(02)00350-0
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“Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas”. Volkov VV, van Landuyt J, Marushkin KM, Gijbels R, Férauge C, Vasilyev MG, Shelyakin AA, Sokolovsky AA, Journal of crystal growth 173, 285 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.751
Times cited: 4
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“Combined characterization of composite tabular silver halide microcrystals by cryo-EFTEM/EELS and cryo-STEM/EDX techniques”. Oleshko VP, Gijbels RH, van Daele AJ, Jacob WA, Xu Y-E, Wang S-E, Park I-Y, Kang T-S, Microscopy research and technique 42, 108 (1998). http://doi.org/10.1002/(SICI)1097-0029(19980715)42:2<108::AID-JEMT5>3.0.CO;2-P
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.147
Times cited: 4
DOI: 10.1002/(SICI)1097-0029(19980715)42:2<108::AID-JEMT5>3.0.CO;2-P
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“Comparative study of organic dyes with time-of-flight static secondary ion mass spectrometry and related techniques”. Adriaensen L, Vangaever F, Lenaerts J, Gijbels R, Journal of mass spectrometry 40, 615 (2005). http://doi.org/10.1002/jms.832
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 2.422
Times cited: 4
DOI: 10.1002/jms.832
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