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Author Bending, S.J.; Neal, J.S.; Milošević, M.V.; Potenza, A.; san Emeterio, L.; Marrows, C.H.
Title Vortex-antivortex 'molecular crystals' in hybrid ferromagnet/superconductor structures Type A1 Journal article
Year 2009 Publication Journal of physics : conference series Abbreviated Journal
Volume 150 Issue 5 Pages 052019
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We have used high resolution Hall probe microscopy to image vortex-antivortex (V-AV) 'molecules' induced in superconducting Pb films by the stray fields from square arrays of ferromagnetic Co/Pt dots. We have directly observed spontaneous V-AV pairs and studied how they interact with added 'free' (anti)fluxons in an applied magnetic field. We observe a rich variety of subtle phenomena arising from competing symmetries in our system which can either drive added antivortices to join AV shells around nanomagnets or stabilise the translationally symmetric AV lattice between the dots. Added vortices annihilate AV shells, leading eventually to a stable 'nulling' state with no free fluxons, which should exhibit a strongly (field-)enhanced critical current. At higher densities we actually observe vortex shells around the magnets, stabilised by the asymmetric anti-pinning potential. Our experimental findings are in good agreement with Ginzburg-Landau calculations.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos Publication Date 2009-04-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588;1742-6596; ISBN Additional Links UA library record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:106136 Serial 3855
Permanent link to this record
 

 
Author Connolly, M.R.; Milošević, M.V.; Bending, S.J.; Clem, J.R.; Tamegai, T.
Title Vortex 'puddles' and magic vortex numbers in mesoscopic superconducting disks Type A1 Journal article
Year 2009 Publication Journal of physics : conference series Abbreviated Journal
Volume 150 Issue 5 Pages 052039
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The magnetic properties of a superconducting disk change dramatically when its dimensions become mesoscopic. Unlike large disks, where the screening currents induced by an applied magnetic field are strong enough to force vortices to accumulate in a 'puddle' at the centre, in a mesoscopic disk the interaction between one of these vortices and the edge currents can be comparable to the intervortex repulsion, resulting in a destruction of the ordered triangular vortex lattice structure at the centre. Vortices instead form clusters which adopt polygonal and shell-like structures which exhibit magic number states similar to those of charged particles in a confining potential, and electrons in artificial atoms. We have fabricated mesoscopic high temperature superconducting Bi2Sr2CaCu2O8+δ disks and investigated their magnetic properties using magneto-optical imaging (MOI) and high resolution scanning Hall probe microscopy (SHPM). The temperature dependence of the vortex penetration field measured using MOI is in excellent agreement with models of the thermal excitation of pancake vortices over edge barriers. The growth of the central vortex puddle has been directly imaged using SHPM and magic vortex numbers showing higher stability have been correlated with abrupt jumps in the measured local magnetisation curves.
Address
Corporate Author Thesis
Publisher Place of Publication Bristol Editor
Language Wos Publication Date 2009-04-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588;1742-6596; ISBN Additional Links UA library record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:106137 Serial 3881
Permanent link to this record
 

 
Author Verreck, D.; Van de Put, M.L.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Dabral, A.; Thean, A.; Groeseneken, G.
Title 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors Type P1 Proceeding
Year 2015 Publication 18th International Workshop On Computational Electronics (iwce 2015) Abbreviated Journal
Volume Issue Pages
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract A carefully chosen heterostructure can significantly boost the performance of tunnel field-effect transistors (TFET). Modelling of these hetero-TFETs requires a quantum mechanical (QM) approach with an accurate band structure to allow for a correct description of band-to-band-tunneling. We have therefore developed a fully QM 2D solver, combining for the first time a full zone 15-band envelope function formalism with a spectral approach, including a heterostructure basis set transformation. Simulations of GaSb/InAs broken gap TFETs illustrate the wide body capabilities and transparant transmission analysis of the formalism.
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos 000380398200055 Publication Date 2015-10-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-0-692-51523-5 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:134998 Serial 4131
Permanent link to this record
 

 
Author Moors, K.; Sorée, B.; Magnus, W.
Title Analytic solution of Ando's surface roughness model with finite domain distribution functions Type P1 Proceeding
Year 2015 Publication 18th International Workshop On Computational Electronics (iwce 2015) Abbreviated Journal
Volume Issue Pages
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract Ando's surface roughness model is applied to metallic nanowires and extended beyond small roughness size and infinite barrier limit approximations for the wavefunction overlaps, such as the Prange-Nee approximation. Accurate and fast simulations can still be performed without invoking these overlap approximations by averaging over roughness profiles using finite domain distribution functions to obtain an analytic solution for the scattering rates. The simulations indicate that overlap approximations, while predicting a resistivity that agrees more or less with our novel approach, poorly estimate the underlying scattering rates. All methods show that a momentum gap between left- and right-moving electrons at the Fermi level, surpassing a critical momentum gap, gives rise to a substantial decrease in resistivity.
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-0-692-51523-5 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:134996 Serial 4140
Permanent link to this record
 

 
Author Moors, K.; Sorée, B.; Magnus, W.
Title Modeling and tackling resistivity scaling in metal nanowires Type P1 Proceeding
Year 2015 Publication International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC Abbreviated Journal
Volume Issue Pages 222-225
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The different scattering mechanisms and the influence of their statistical parameters are analyzed. Instead of a simple power law relating the height or width of a nanowire to its resistivity, the picture appears to be more complicated due to quantum-mechanical scattering and quantization effects, especially for surface roughness scattering.
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-1-4673-7860-4 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:135046 Serial 4205
Permanent link to this record
 

 
Author Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B.; Fischetti, M.V.
Title Modeling of inter-ribbon tunneling in graphene Type P1 Proceeding
Year 2015 Publication 18th International Workshop On Computational Electronics (iwce 2015) Abbreviated Journal
Volume Issue Pages
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important factor determining the tunneling current between small (similar to nm) ribbons. The quasi-one dimensional nature of graphene nanoribbons is shown to result in resonant tunneling.
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-0-692-51523-5 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:134997 Serial 4206
Permanent link to this record
 

 
Author Topalovic, D.B.; Arsoski, V.V.; Pavlovic, S.; Cukaric, N.A.; Tadic, M.Z.; Peeters, F.M.
Title On improving accuracy of finite-element solutions of the effective-mass Schrodinger equation for interdiffused quantum wells and quantum wires Type A1 Journal article
Year 2016 Publication Communications in theoretical physics Abbreviated Journal Commun Theor Phys
Volume 65 Issue 1 Pages 105-113
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We use the Galerkin approach and the finite-element method to numerically solve the effective-mass Schrodinger equation. The accuracy of the solution is explored as it varies with the range of the numerical domain. The model potentials are those of interdiffused semiconductor quantum wells and axially symmetric quantum wires. Also, the model of a linear harmonic oscillator is considered for comparison reasons. It is demonstrated that the absolute error of the electron ground state energy level exhibits a minimum at a certain domain range, which is thus considered to be optimal. This range is found to depend on the number of mesh nodes N approximately as alpha(0) log(e)(alpha 1) (alpha N-2), where the values of the constants alpha(0), alpha(1), and alpha(2) are determined by fitting the numerical data. And the optimal range is found to be a weak function of the diffusion length. Moreover, it was demonstrated that a domain range adaptation to the optimal value leads to substantial improvement of accuracy of the solution of the Schrodinger equation.
Address
Corporate Author Thesis
Publisher Place of Publication Wallingford Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0253-6102; 1572-9494 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.989 Times cited (up) Open Access
Notes Approved Most recent IF: 0.989
Call Number UA @ lucian @ c:irua:133213 Serial 4216
Permanent link to this record
 

 
Author Brammertz, G.; Buffiere, M.; Verbist, C.; Bekaert, J.; Batuk, M.; Hadermann, J.; et al.
Title Process variability in Cu2ZnSnSe4 solar cell devices: Electrical and structural investigations Type P1 Proceeding
Year 2015 Publication The conference record of the IEEE Photovoltaic Specialists Conference T2 – IEEE 42nd Photovoltaic Specialist Conference (PVSC), JUN 14-19, 2015, New Orleans, LA Abbreviated Journal
Volume Issue Pages
Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract We have fabricated 9.7% efficient Cu2ZnSnSe4/CdS/ZnO solar cells by H2Se selenization of sequentially sputtered metal layers. Despite the good efficiency obtained, process control appears to be difficult. In the present contribution we compare the electrical and physical properties of two devices with nominal same fabrication procedure, but 1% and 9.7% power conversion efficiency respectively. We identify the problem of the lower performing device to be the segregation of ZnSe phases at the backside of the sample. This ZnSe seems to be the reason for the strong bias dependent photocurrent observed in the lower performing devices, as it adds a potential barrier for carrier collection. The reason for the different behavior of the two nominally same devices is not fully understood, but speculated to be related to sputtering variability.
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-1-4799-7944-8 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:132335 Serial 4229
Permanent link to this record
 

 
Author Cukaric, N.A.; Partoens, B.; Tadic, M.Z.; Arsoski, V.V.; Peeters, F.M.
Title The 30-band k . p theory of valley splitting in silicon thin layers Type A1 Journal article
Year 2016 Publication Journal of physics : condensed matter Abbreviated Journal J Phys-Condens Mat
Volume 28 Issue 28 Pages 195303
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The valley splitting of the conduction-band states in a thin silicon-on-insulator layer is investigated using the 30-band k . p theory. The system composed of a few nm thick Si layer embedded within thick SiO2 layers is analyzed. The valley split states are found to cross periodically with increasing quantum well width, and therefore the energy splitting is an oscillatory function of the quantum well width, with period determined by the wave vector K-0 of the conduction band minimum. Because the valley split states are classified by parity, the optical transition between the ground hole state and one of those valley split conduction band states is forbidden. The oscillations in the valley splitting energy decrease with electric field and with smoothing of the composition profile between the well and the barrier by diffusion of oxygen from the SiO2 layers to the Si quantum well. Such a smoothing also leads to a decrease of the interband transition matrix elements. The obtained results are well parametrized by the effective two-valley model, but are found to disagree from previous 30-band calculations. This discrepancy could be traced back to the fact that the basis for the numerical solution of the eigenproblem must be restricted to the first Brillouin zone in order to obtain quantitatively correct results for the valley splitting.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000374394700009 Publication Date 2016-04-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-8984 ISBN Additional Links UA library record; WoS full record
Impact Factor 2.649 Times cited (up) Open Access
Notes ; This work was supported by the Ministry of Education, Science, and Technological Development of Serbia, the Flemish fund for Scientific Research (FWO-Vl), and the Methusalem programme of the Flemish government. ; Approved Most recent IF: 2.649
Call Number UA @ lucian @ c:irua:133610 Serial 4261
Permanent link to this record
 

 
Author Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G.
Title Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors Type P1 Proceeding
Year 2016 Publication Solid-State Device Research (ESSDERC), European Conference T2 – 46th European Solid-State Device Research Conference (ESSDERC) / 42nd, European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND Abbreviated Journal
Volume Issue Pages 412-415
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract Because of its localized impact on the band structure, non-uniform strain at the heterojunction between lattice-mismatched materials has the potential to significantly enlarge the design space for tunnel-field effect transistors (TFET). However, the impact of a complex strain profile on TFET performance is difficult to predict. We have therefore developed a 2D quantum mechanical transport formalism capable of simulating the effects of a general non-uniform strain. We demonstrate the formalism for the GaAsxSb(1-x)/InyGa(1-y) As system and show that a performance improvement over a lattice-matched reference is indeed possible, allowing for relaxed requirements on the source doping. We also point out that the added design parameter of mismatch is not free, but limited by the desired effective bandgap at the tunnel junction.
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-1-5090-2969-3 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:138233 Serial 4358
Permanent link to this record
 

 
Author Shumilin, A.V.; Baranov, V.V.; Kabanov, V.V.
Title Upper critical field in the model with finite-range interaction between electrons Type A1 Journal article
Year 2016 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 94 Issue 94 Pages 174506
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We develop a theory of the upper critical field in a BCS superconductor with a nonlocal interaction between electrons. We have shown that the nonlocal interaction is characterized by the parameter k(F)rho(0), where k(F) is the Fermi momentum and rho(0) is the radius of electron-electron interaction. The presence of the external magnetic field leads to the generation of additional components of the order parameter with different angular momenta. This effect leads to the enhancement of the upper critical field above the orbital limiting field. In addition the upward curvature in the temperature dependence of H-c2 (T) in the clean limit is predicted. The impurity scattering suppresses the effect in the dirty limit.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000387884100005 Publication Date 2016-11-14
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9950;2469-9969; ISBN Additional Links UA library record; WoS full record
Impact Factor 3.836 Times cited (up) Open Access
Notes ; ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:139166 Serial 4365
Permanent link to this record
 

 
Author Lawson, N.C.; Janyavula, S.; Çakir, D.; Burgess, J.O.
Title An analysis of the physiologic parameters of intraoral wear: a review Type A1 Journal article
Year 2013 Publication Journal Of Physics D-Applied Physics Abbreviated Journal J Phys D Appl Phys
Volume 46 Issue 40 Pages Unsp 404007
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract This paper reviews the conditions of in vivo mastication and describes a novel method of measuring in vitro wear. Methods: parameters of intraoral wear are reviewed in this analysis, including chewing force, tooth sliding distance, food abrasivity, saliva lubrication, and antagonist properties. Results: clinical measurement of mastication forces indicates a range of normal forces between 20 and 140 N for a single molar. During the sliding phase of mastication, horizontal movement has been measured between 0.9 and 2.86 mm. In vivo wear occurs by three-body abrasion when food particles are interposed between teeth and by two-body abrasion after food clearance. Analysis of food particles used in wear testing reveals that food particles are softer than enamel and large enough to separate enamel and restoration surfaces and act as a solid lubricant. In two-body wear, saliva acts as a boundary lubricant with a viscosity of 3 cP. Enamel is the most relevant antagonist material for wear testing. The shape of a palatal cusp has been estimated as a 0.6 mm diameter ball and the hardest region of a tooth is its enamel surface. pH values and temperatures have been shown to range between 2-7 and 5-55 degrees C in intraoral fluids, respectively. These intraoral parameters have been used to modify the Alabama wear testing method.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos Publication Date 2013-09-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3727 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.588 Times cited (up) Open Access
Notes Approved Most recent IF: 2.588; 2013 IF: 2.521
Call Number UA @ lucian @ c:irua:128322 Serial 4585
Permanent link to this record
 

 
Author Celebi, S.; Sezgin, M.E.; Çakir, D.; Baytan, B.; Demirkaya, M.; Sevinir, B.; Bozdemir, S.E.; Gunes, A.M.; Hacimustafaoglu, M.
Title Catheter-associated bloodstream infections in pediatric hematology-oncology patients Type A1 Journal article
Year 2013 Publication Pediatric Hematology And Oncology Abbreviated Journal Pediatr Hemat Oncol
Volume 30 Issue 3 Pages 187-194
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Catheter-associated bloodstream infections (CABSIs) are common complications encountered with cancer treatment. The aims of this study were to analyze the factors associated with recurrent infection and catheter removal in pediatric hematology-oncology patients. All cases of CABSIs in patients attending the Department of Pediatric Hematology-Oncology between January 2008 and December 2010 were reviewed. A total of 44 episodes of CABSIs, including multiple episodes involving the same catheter, were identified in 31 children with cancer. The overall CABSIs rate was 7.4 infections per 1000 central venous catheter (CVC) days. The most frequent organism isolated was coagulase-negative Staphylococcus (CONS). The CVC was removed in nine (20.4%) episodes. We found that hypotension, persistent bacteremia, Candida infection, exit-side infection, neutropenia, and prolonged duration of neutropenia were the factors for catheter removal. There were 23 (52.2%) episodes of recurrence or reinfection. Mortality rate was found to be 9.6% in children with CABSIs. In this study, we found that CABSIs rate was 7.4 infections per 1000 catheter-days. CABSIs rates in our hematology-oncology patients are comparable to prior reports. Because CONS is the most common isolated microorganism in CABSIs, vancomycin can be considered part of the initial empirical regimen.
Address
Corporate Author Thesis
Publisher Place of Publication New York Editor
Language Wos Publication Date 2013-04-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0888-0018 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.12 Times cited (up) Open Access
Notes Approved Most recent IF: 1.12; 2013 IF: 0.963
Call Number UA @ lucian @ c:irua:128324 Serial 4589
Permanent link to this record
 

 
Author Arsoski, V.; Tadic, M.; Peeters, F.M.
Title Electric field tuning of the optical excitonic Aharonov-Bohm effect in nanodots grown by droplet epitaxy Type A1 Journal article
Year 2013 Publication Physica scripta Abbreviated Journal Phys Scripta
Volume T157 Issue Pages 014002
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Neutral excitons in axially symmetric GaAs nanodots embedded in an (Al, Ga) As matrix, which are formed by the droplet epitaxy technique, are investigated theoretically. An electric field perpendicular to the nanodot base results in both a vertical and an in-plane exciton polarization, which is beneficial for the appearance of the excitonic Aharonov-Bohm effect. In the range of low magnetic fields (below 5 Tesla), we found that the bright and dark exciton states can cross twice. This results in oscillations of the photoluminescence intensity with magnetic field, which are a striking manifestation of the optical excitonic Aharonov-Bohm effect.
Address
Corporate Author Thesis
Publisher Place of Publication Stockholm Editor
Language Wos 000332504600003 Publication Date 2013-11-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8949 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.28 Times cited (up) Open Access
Notes ; This work was supported by the EU Network of Excellence: SANDiE, the Ministry of Education and Science of Serbia, the Flemish Science Foundation (FWO-Vl) and the Belgian Science Policy (IAP). ; Approved Most recent IF: 1.28; 2013 IF: 1.296
Call Number UA @ lucian @ c:irua:128901 Serial 4594
Permanent link to this record
 

 
Author Petrovic, M.D.; Peeters, F.M.
Title Quantum transport in graphene Hall bars : effects of side gates Type A1 Journal article
Year 2017 Publication Solid state communications Abbreviated Journal Solid State Commun
Volume 257 Issue 257 Pages 20-26
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau levels, and creates new propagating states in the Landau spectrum (i.e. snake states). The existence of these new states leads to an interesting modification of the bend and Hall resistances, with new quantizing plateaus appearing in close proximity of the Landau levels. The electron guiding in this system can be understood by studying the current density profiles of the incoming and outgoing modes. From the fact that guided electrons fully transmit without any backscattering (similarly to edge states), we are able to analytically predict the values of the quantized resistances, and they match the resistance data we obtain with our numerical (tight-binding) method. These insights in the electron guiding will be useful in predicting the resistances for other side-gate configurations, and possibly in other system geometries, as long as there is no backscattering of the guided states.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000401101400005 Publication Date 2017-04-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.554 Times cited (up) Open Access
Notes ; This work was supported by the Methusalem programme of the Flemish government. One of us (F. M. Peeters) acknowledges correspondence with K. Novoselov. ; Approved Most recent IF: 1.554
Call Number UA @ lucian @ c:irua:143761 Serial 4604
Permanent link to this record
 

 
Author Hacimustafaoglu, M.; Celebi, S.; Bozdemir, S.E.; Ozgur, T.; Ozcan, I.; Guray, A.; Çakir, D.
Title RSV frequency in children below 2 years hospitalized for lower respiratory tract infections Type A1 Journal article
Year 2013 Publication Turkish Journal Of Pediatrics Abbreviated Journal Turkish J Pediatr
Volume 55 Issue 2 Pages 130-139
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Respiratory syncytial virus (RSV) is the most frequent agent of acute lower respiratory diseases and creates a significant burden of disease in children under 5 years all over the world. RSV causes severe lower respiratory tract infections (LRTI) that require hospitalization, especially in children <= 2 years. The aim of this study was to determine the incidence of RSV in children <= 2 years of age hospitalized for LRTI. Children <= 2 years of age hospitalized for one year for LRTI in the three largest hospitals of Bursa City Center, Turkey were evaluated. These three hospitals comprise 67.5% of all child beds in central Bursa, so this study allows us to evaluate the total disease burden and hospitalization incidence in central Bursa. Nasal swabs of the children were evaluated with RSV RespiStrip (Coris Bioconcept Organization). A total of 671 children were hospitalized for LRTI, and 254 (37.9%) had at least one hospitalization that was positive for RSV. Of all patients with LRTI, 54.8% (368/671) were hospitalized for acute bronchiolitis, while 45.2% (303/671) were hospitalized for pneumonia. Of patients with acute bronchiolitis or pneumonia, 41% (151/368) and 34% (103/303) were RSV+, respectively. Of RSV+ hospitalized children, 59.5% (151/254) were diagnosed as acute bronchiolitis and 40.5% (103/254) as pneumonia. The annual incidences of hospitalization due to LRTI, acute bronchiolitis and pneumonia were 20.5/1000, 11.2/1000 and 9.3/1000, respectively, in children <= 2 years of age. The annual incidences of hospitalization due to RSV+ LRTI, acute bronchiolitis and pneumonia were found as 7.8/1000, 4.6/1000 and 3.2/1000, respectively, in children <= 2 years of age. More than one-third of all children hospitalized with LRTI (38.3%, n=257) were in the 0-3 months age group. Compared to other age groups, RSV positivity was highest in that age group for acute bronchiolitis (57%), pneumonia (39.5%) and also total children with LRTI (47.9%). RSV is a very important cause of lower respiratory infections in children <= 2 years of age and occurred most frequently in those 0-3 months of age in our study. Since there is no other study assessing the annual hospitalization incidence of RSV+ LRTIs in one city in Turkey, our study has unique importance for providing valuable statistical data about RSV+ LRTIs.
Address
Corporate Author Thesis
Publisher Place of Publication Ankara Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0041-4301 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.32 Times cited (up) Open Access
Notes Approved Most recent IF: 0.32; 2013 IF: 0.339
Call Number UA @ lucian @ c:irua:128325 Serial 4606
Permanent link to this record
 

 
Author Zebrowski, D.P.; Peeters, F.M.; Szafran, B.
Title Driven spin transitions in fluorinated single- and bilayer-graphene quantum dots Type A1 Journal article
Year 2017 Publication Semiconductor science and technology Abbreviated Journal Semicond Sci Tech
Volume 32 Issue 6 Pages 065016
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Spin transitions driven by a periodically varying electric potential in dilute fluorinated graphene quantum dots are investigated. Flakes of monolayer graphene as well as electrostatic electron traps induced in bilayer graphene are considered. The stationary states obtained within the tight-binding approach are used as the basis for description of the system dynamics. The dilute fluorination of the top layer lifts the valley degeneracy of the confined states and attenuates the orbital magnetic dipole moments due to current circulation within the flake. The spin-orbit coupling introduced by the surface deformation of the top layer induced by the adatoms allows the spin flips to be driven by the AC electric field. For the bilayer quantum dots the spin flip times is substantially shorter than the spin relaxation. Dynamical effects including many-photon and multilevel transitions are also discussed.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000402405800007 Publication Date 2017-04-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record
Impact Factor 2.305 Times cited (up) Open Access
Notes ; This work was supported by the National Science Centre according to decision DEC-2013/11/B/ST3/03837 and by the Flemish Science Foundation (FWO-VL). ; Approved Most recent IF: 2.305
Call Number UA @ lucian @ c:irua:144238 Serial 4646
Permanent link to this record
 

 
Author Moors, K.; Soree, B.; Tokei, Z.; Magnus, W.
Title Electron relaxation times and resistivity in metallic nanowires due to tilted grain boundary planes Type P1 Proceeding
Year 2015 Publication On Ultimate Integration On Silicon (eurosoi-ulis) Abbreviated Journal
Volume Issue Pages 201-204
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi's golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. Grain boundaries tilted under the same angle or randomly tilted induce a resistivity decrease.
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-1-4799-6911-1 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:144776 Serial 4651
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Author Verhulst, A.S.; Verreck, D.; Smets, Q.; Kao, K.-H.; Van de Put, M.; Rooyackers, R.; Sorée, B.; Vandooren, A.; De Meyer, K.; Groeseneken, G.; Heyns, M.M.; Mocuta, A.; Collaert, N.; Thean, A.V.-Y.
Title Perspective of tunnel-FET for future low-power technology nodes Type P1 Proceeding
Year 2014 Publication 2014 Ieee International Electron Devices Meeting (iedm) Abbreviated Journal
Volume Issue Pages
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-1-4799-8000-0 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:144789 Serial 4679
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Author De Clercq, M.; Moors, K.; Sankaran, K.; Pourtois, G.; Dutta, S.; Adelmann, C.; Magnus, W.; Sorée, B.
Title Resistivity scaling model for metals with conduction band anisotropy Type A1 Journal article
Year 2018 Publication Physical review materials Abbreviated Journal
Volume 2 Issue 3 Pages 033801
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract It is generally understood that the resistivity of metal thin films scales with film thickness mainly due to grain boundary and boundary surface scattering. Recently, several experiments and ab initio simulations have demonstrated the impact of crystal orientation on resistivity scaling. The crystal orientation cannot be captured by the commonly used resistivity scaling models and a qualitative understanding of its impact is currently lacking. In this work, we derive a resistivity scaling model that captures grain boundary and boundary surface scattering as well as the anisotropy of the band structure. The model is applied to Cu and Ru thin films, whose conduction bands are (quasi-) isotropic and anisotropic, respectively. After calibrating the anisotropy with ab initio simulations, the resistivity scaling models are compared to experimental resistivity data and a renormalization of the fitted grain boundary reflection coefficient can be identified for textured Ru.
Address
Corporate Author Thesis
Publisher American Physical Society Place of Publication College Park, Md Editor
Language Wos 000426787600001 Publication Date 2018-03-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2475-9953 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited (up) Open Access
Notes ; The authors acknowledge the support by the Fonds National de la Recherche Luxembourg (ATTRACT Grant No. 7556175). ; Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:149866UA @ admin @ c:irua:149866 Serial 4947
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Author Kenawy, A.; Magnus, W.; Sorée, B.
Title Flux quantization and Aharonov-Bohm effect in superconducting rings Type A1 Journal article
Year 2018 Publication Journal of superconductivity and novel magnetism Abbreviated Journal J Supercond Nov Magn
Volume 31 Issue 5 Pages 1351-1357
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Superconductivity is a macroscopic coherent state exhibiting various quantum phenomena such as magnetic flux quantization. When a superconducting ring is placed in a magnetic field, a current flows to expel the field from the ring and to ensure that the enclosed flux is an integer multiple of h/(2|e|). Although the quantization of magnetic flux in ring structures is extensively studied in literature, the applied magnetic field is typically assumed to be homogeneous, implicitly implying an interplay between field expulsion and flux quantization. Here, we propose to decouple these two effects by employing an Aharonov-Bohm-like structure where the superconducting ring is threaded by a magnetic core (to which the applied field is confined). Although the magnetic field vanishes inside the ring, the formation of vortices takes place, corresponding to a change in the flux state of the ring. The time evolution of the density of superconducting electrons is studied using the time-dependent Ginzburg-Landau equations.
Address
Corporate Author Thesis
Publisher Place of Publication New York, N.Y. Editor
Language Wos 000429354100010 Publication Date 2017-10-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1557-1939 ISBN Additional Links UA library record; WoS full record
Impact Factor 1.18 Times cited (up) Open Access
Notes ; ; Approved Most recent IF: 1.18
Call Number UA @ lucian @ c:irua:150742UA @ admin @ c:irua:150742 Serial 4969
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Author Domingos, J.L.C.; Peeters, F.M.; Ferreira, W.P.
Title Self-assembly and clustering of magnetic peapod-like rods with tunable directional interaction Type A1 Journal article
Year 2018 Publication PLoS ONE Abbreviated Journal Plos One
Volume 13 Issue 4 Pages e0195552
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract Based on extensive Langevin Dynamics simulations we investigate the structural properties of a two-dimensional ensemble of magnetic rods with a peapod-like morphology, i.e, rods consisting of aligned single dipolar beads. Self-assembled configurations are studied for different directions of the dipole with respect to the rod axis. We found that with increasing misalignment of the dipole from the rod axis, the smaller the packing fraction at which the percolation transition is found. For the same density, the system exhibits different aggregation states for different misalignment. We also study the stability of the percolated structures with respect to temperature, which is found to be affected by the microstructure of the assembly of rods.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1932-6203 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.806 Times cited (up) Open Access
Notes Approved Most recent IF: 2.806
Call Number UA @ lucian @ c:irua:150778UA @ admin @ c:irua:150778 Serial 4977
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Author Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G.
Title Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors Type P1 Proceeding
Year 2017 Publication Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017) Abbreviated Journal
Volume Issue Pages 29-32
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract Heterostructures of III-V materials under a mechanical strain are being actively researched to enhance the performance of the tunnel field-effect transistor (TFET). In scaled III-V device structures, however, the interplay between the effects of strain and quantum confinement on the semiconductor band structure and hence the performance is highly non-trivial. We have therefore developed a computationally efficient quantum mechanical simulator Pharos, which enables self-consistent full-zone k.p-based simulations of III-V TFETs under a general non-uniform strain. We present the self-consistent procedure and demonstrate it on confined staggered bandgap GaAs0.5Sb0.5/In0.53Ga0.47As TFETs. We find a large performance degradation due to size-induced quantum confinement compared to non-confined devices. We show that some performance can be regained either by applying a uniform biaxial tensile strain or through the non-uniform strain profile at a lattice-mismatched heterostructure.
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-4-86348-610-2 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:149949 Serial 4978
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Author Vanherck, J.; Sorée, B.; Magnus, W.
Title Anisotropic bulk and planar Heisenberg ferromagnets in uniform, arbitrarily oriented magnetic fields Type A1 Journal article
Year 2018 Publication Journal of physics : condensed matter Abbreviated Journal J Phys-Condens Mat
Volume 30 Issue 27 Pages 275801
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Today, further downscaling of mobile electronic devices poses serious problems, such as energy consumption and local heat dissipation. In this context, spin wave majority gates made of very thin ferromagnetic films may offer a viable alternative. However, similar downscaling of magnetic thin films eventually enforces the latter to operate as quasi-2D magnets, the magnetic properties of which are not yet fully understood, especially those related to anisotropies and external magnetic fields in arbitrary directions. To this end, we have investigated the behaviour of an easy-plane and easy-axis anisotropic ferromagnet-both in two and three dimensions-subjected to a uniform magnetic field, applied along an arbitrary direction. In this paper, a spin-1/2 Heisenberg Hamiltonian with anisotropic exchange interactions is solved using double-time temperature-dependent Green's functions and the Tyablikov decoupling approximation. We determine various magnetic properties such as the Curie temperature and the magnetization as a function of temperature and the applied magnetic field, discussing the impact of the system's dimensionality and the type of anisotropy. The magnetic reorientation transition taking place in anisotropic Heisenberg ferromagnets is studied in detail. Importantly, spontaneous magnetization is found to be absent for easy-plane 2D spin systems with short range interactions.
Address
Corporate Author Thesis
Publisher Place of Publication London Editor
Language Wos 000434980600001 Publication Date 2018-05-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-8984 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.649 Times cited (up) Open Access
Notes ; ; Approved Most recent IF: 2.649
Call Number UA @ lucian @ c:irua:151945UA @ admin @ c:irua:151945 Serial 5012
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Author Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G.
Title Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs Type P1 Proceeding
Year 2018 Publication Conference digest T2 – 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA Abbreviated Journal
Volume Issue Pages
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Ieee Place of Publication New york Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-1-5386-3028-0 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:153780 Serial 5106
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Author Saberi-Pouya, S.; Zarenia, M.; Vazifehshenas, T.; Peeters, F.M.
Title Anisotropic charge density wave in electron-hole double monolayers : applied to phosphorene Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 98 Issue 24 Pages 245115
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The possibility of an inhomogeneous charge density wave phase is investigated in a system of two coupled electron and hole monolayers separated by a hexagonal boron nitride insulating layer. The charge-density-wave state is induced through the assumption of negative compressibility of electron/hole gases in a Coulomb drag configuration between the electron and hole sheets. Under equilibrium conditions, we derive analytical expressions for the density oscillation along the zigzag and armchair directions. We find that the density modulation not only depends on the sign of the compressibility but also on the anisotropy of the low-energy bands. Our results are applicable to any two-dimensional system with anisotropic parabolic bands, characterized by different effective masses. For equal effective masses, i.e., isotropic energy bands, our results agree with Hroblak et al. [Phys. Rev. B 96, 075422 (2017)]. Our numerical results are applied to phosphorene.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000452995600001 Publication Date 2018-12-12
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record
Impact Factor 3.836 Times cited (up) Open Access
Notes ; This work was partially supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem program of the Flemish government and Iran Science Elites Federation. ; Approved Most recent IF: 3.836
Call Number UA @ admin @ c:irua:156233 Serial 5195
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Author Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G.
Title Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs Type P1 Proceeding
Year 2018 Publication Conference digest T2 – 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA Abbreviated Journal
Volume Issue Pages
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000444728400086 Publication Date 2018-09-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-1-5386-3028-0 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ admin @ c:irua:153780 Serial 5217
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Author Kaintura, A.; Foss, K.; Couckuyt, I.; Dhaene, T.; Zografos, O.; Vaysset, A.; Sorée, B.
Title Machine Learning for Fast Characterization of Magnetic Logic Devices Type P1 Proceeding
Year 2018 Publication (edaps 2018) Abbreviated Journal
Volume Issue Pages
Keywords P1 Proceeding; Condensed Matter Theory (CMT)
Abstract Non-charge-based logic devices are promising candidates for future logic circuits. Interest in studying and developing these devices has grown dramatically in the past decade as they possess key advantages over conventional CMOS technology. Due to their novel designs, a large number of micromagnetic simulations are required to fully characterize the behavior of these devices. The number and complexity of these simulations place large computational requirements on device development. We use state-of-the-art machine learning techniques to expedite identification of their behavior. Several intelligent sampling strategies are combined with machine learning multi-class classification models. These techniques are applied to a recently developed exchange-driven magnetic logic scheme that utilizes direct exchange coupling as the main driver.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos Publication Date
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-1-5386-6592-3 ISBN Additional Links UA library record; WoS full record
Impact Factor Times cited (up) Open Access
Notes Approved Most recent IF: NA
Call Number UA @ admin @ c:irua:160484 Serial 5219
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Author De Beule, C.; Saniz, R.; Partoens, B.
Title Crystalline topological states at a topological insulator junction Type A1 Journal article
Year 2019 Publication The journal of physics and chemistry of solids Abbreviated Journal J Phys Chem Solids
Volume 128 Issue 128 Pages 144-151
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract We consider an interface between two strong time-reversal invariant topological insulators having surface states with opposite spin chirality, or equivalently, opposite mirror Chern number. We show that such an interface supports gapless modes that are protected by mirror symmetry. The interface states are investigated with a continuum model for the Bi2Se3 class of topological insulators that takes into account terms up to third order in the crystal momentum, which ensures that the model has the correct symmetry. The model parameters are obtained from ab initio calculations. Finally, we consider the effect of rotational mismatch at the interface, which breaks the mirror symmetry and opens a gap in the interface spectrum.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000472693100013 Publication Date 2018-01-31
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3697 ISBN Additional Links UA library record; WoS full record
Impact Factor 2.059 Times cited (up) Open Access
Notes ; ; Approved Most recent IF: 2.059
Call Number UA @ admin @ c:irua:161391 Serial 5385
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Author de Sousa, A.A.; Chaves, A.; Pereira, T.A.S.; de Farias, G.A.; Peeters, F.M.
Title Wave packet propagation through branched quantum rings under applied magnetic fields Type A1 Journal article
Year 2019 Publication Physica. E: Low-dimensional systems and nanostructures Abbreviated Journal Physica E
Volume 114 Issue 114 Pages 113598
Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Abstract We investigate the effect of opening and closing pathways on the dynamics of electron wave packets in semiconductor quantum rings with different geometries. Our analysis is based on the time evolution of an electron wave packet, within the effective-mass approximation. We demonstrate that opening an extra channel in the quantum ring does not necessarily improve the electron transmission and, depending on the extra channel width, may even reduce it, either due to enhancement of quantum scattering or due to interference. In the latter case, transmission reduction can be controlled through the Aharonov-Bohm phase of the wave function, via an applied magnetic field. It is also shown that, closing one of the channels of the quantum ring, system improves the transmission probability under specific conditions, an effect which is a quantum analog of the Braess paradox.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000482637000039 Publication Date 2019-06-13
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1386-9477 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.221 Times cited (up) Open Access
Notes ; This work was financially supported by PRONEX/CNPq/FUNCAP, Science Without Boards (Ciencias Sem Fronteiras) and the bilateral project CNPq-FWO. A. A. Sousa was financially supported by CAPES, under the PDSE contract BEX 7177/ 13-5. T. A. S. Pereira was financially supported by PRONEX/CNPq/FAPEMAT 850109/ 2009 and by CAPES under process BEX 3299/13-9. ; Approved Most recent IF: 2.221
Call Number UA @ admin @ c:irua:162777 Serial 5432
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