| Author |
Title |
Year |
Publication |
Volume |
Times cited  |
Additional Links |
| Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
|
|
UA library record; WoS full record; |
| Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
2000 |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
5 |
|
UA library record; WoS full record; |
| van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. |
Crystallography of fullerites and related graphene textures |
1994 |
Materials science forum |
150/151 |
|
UA library record; WoS full record; |
| Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. |
Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study |
2000 |
|
|
|
UA library record; WoS full record; |
| van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
Defect related growth of tabular AgCl(100) crystals: a TEM study |
1998 |
|
|
|
UA library record; WoS full record; |
| De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. |
Direct observation of clusters in some FCC alloys by HREM |
1994 |
Icem |
13 |
|
UA library record; WoS full record; |
| Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
|
|
UA library record; WoS full record; |
| Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R. |
Electron diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals |
1994 |
Icem |
13 |
|
UA library record; WoS full record; |
| Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
EM study of sensitisation of silver halide grains |
1994 |
Icem |
13 |
|
UA library record; WoS full record; |
| Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Le Tanner |
HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited) |
1994 |
|
|
|
UA library record; WoS full record; |
| Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
HREM investigation of a Fe/GaN/Fe tunnel junction |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
|
|
UA library record; WoS full record; |
| Nistor, L.C.; van Landuyt, J.; Dincã, G. |
HREM of defects in cubic boron nitride single crystals |
1998 |
|
|
|
UA library record; WoS full record; |
| van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
The influence of crystal thickness on the image tone |
2003 |
Journal of imaging science |
47 |
|
UA library record; WoS full record; WoS citing articles |
| van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Bollen, D.; de Keyzer, R.; van Roost, C. |
Influence of twinning on the morphology of AgBr and AgCl microcrystals |
2001 |
The journal of imaging science and technology |
45 |
|
UA library record; WoS full record; WoS citing articles |
| Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. |
Laser thermotreatment of the SnO2layers |
1998 |
Eurosensors XII, vols 1 and 2 |
|
|
UA library record; WoS full record; |
| Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
| Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J. |
Ordering and defects in BanTaxTiyO3n ternary oxides |
1994 |
Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences |
|
|
UA library record; WoS full record; |
| Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. |
Quantitative EFTEM study of germanium quantum dots |
2001 |
|
|
|
UA library record; WoS full record; |
| Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. |
Stress analysis with convergent beam electron diffraction around NMOS transistors |
2001 |
|
|
|
UA library record; WoS full record; |
| Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Korothushenko, K.G.; Smolin, A.A. |
Structural studies of nanocrystalline diamond thin films |
1997 |
Materials science forum |
239-241 |
|
UA library record; WoS full record; |
| De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. |
The study of partially ordered 11/20 alloys by HREM |
1993 |
Microscopy research and technique |
25 |
|
UA library record; WoS full record |
| Vanhellemont, J.; Bender, H.; van Landuyt, J. |
TEM studies of processed Si device materials |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
| van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; van Roost, C.; de Keyzer, R. |
A TEM study of non-parallel twins inducing thickness growth in silver chloride {111} tabular crystals |
2001 |
The journal of imaging science and technology |
45 |
|
UA library record; WoS full record; WoS citing articles |
| van Landuyt, J. |
The evolution of HVEM application in antwerp |
1991 |
Ultramicroscopy
T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan |
39 |
|
UA library record; WoS full record |
| Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C. |
The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals |
2000 |
|
|
|
UA library record; WoS full record; |
| Van Tendeloo, G.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; Amelinckx, S. |
Up close: Center for Electron Microscopy of Materials Science at the University of Antwerp |
1994 |
MRS bulletin |
|
|
UA library record; WoS full record; |
| Schryvers, D.; Van Landuyt, J. |
Electron microscopy study of twin sequences and branching in NissAl34 3R martensite |
1992 |
ICOMAT |
|
|
|
| Volkov, V.V.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Zhukov, E.G.; Polulyak, E.S.; Novotortsev, V.M. |
Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport |
1993 |
Crystal research and technology |
28 |
1 |
UA library record; WoS full record; WoS citing articles |
| Schryvers, D.; van Landuyt, J.T. |
Electron microscopy study of twin sequences and branching in Ni66Al34 3r martensite |
1993 |
Proceedings Of The International Conference On Martensitic Transformations (icomat-92) |
|
1 |
UA library record; WoS full record; WoS citing articles |
| Volkov, V.V.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Busheva, E.E.; Shabunina, G.G.; Aminov, T.G.; Novotortsev, V.M. |
HREM image analysis up to structure determination of SbCrSe3: a new 1D ferromagnet |
1997 |
Journal of solid state chemistry |
132 |
1 |
UA library record; WoS full record; WoS citing articles |
