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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. |
Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope |
1996 |
Materials Research Society symposium proceedings |
404 |
1 |
UA library record; WoS full record; WoS citing articles |
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|
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; Mommaert, C.; Severne, G. |
Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy |
1993 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
67 |
1 |
UA library record; https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993; WoS full record; WoS citing articles |
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|
Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. |
Some examples of electron microscopy studies of microstructures and phase transitions in solids |
1995 |
Meccanica |
30 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers |
1999 |
Microelectronic engineering |
45 |
|
UA library record; WoS full record |
|
|
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
2001 |
Institute of physics conference series |
|
|
UA library record; WoS full record; |
|
|
van Landuyt, J.; Van Tendeloo, G. |
Charcaterization by high-resolution transmission electron microscopy |
1998 |
|
|
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UA library record; WoS full record; |
|
|
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
2001 |
Materials science in semiconductor processing |
4 |
|
UA library record; WoS full record |
|
|
De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy |
2002 |
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UA library record; WoS full record; |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
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UA library record; WoS full record; |
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Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
2000 |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
5 |
|
UA library record; WoS full record; |
|
|
van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. |
Crystallography of fullerites and related graphene textures |
1994 |
Materials science forum |
150/151 |
|
UA library record; WoS full record; |
|
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Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. |
Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study |
2000 |
|
|
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UA library record; WoS full record; |
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van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
Defect related growth of tabular AgCl(100) crystals: a TEM study |
1998 |
|
|
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UA library record; WoS full record; |
|
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De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. |
Direct observation of clusters in some FCC alloys by HREM |
1994 |
Icem |
13 |
|
UA library record; WoS full record; |
|
|
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
|
|
UA library record; WoS full record; |
|
|
Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R. |
Electron diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals |
1994 |
Icem |
13 |
|
UA library record; WoS full record; |
|
|
Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
EM study of sensitisation of silver halide grains |
1994 |
Icem |
13 |
|
UA library record; WoS full record; |
|
|
Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Le Tanner |
HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited) |
1994 |
|
|
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UA library record; WoS full record; |
|
|
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
HREM investigation of a Fe/GaN/Fe tunnel junction |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
|
|
UA library record; WoS full record; |
|
|
Nistor, L.C.; van Landuyt, J.; Dincã, G. |
HREM of defects in cubic boron nitride single crystals |
1998 |
|
|
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UA library record; WoS full record; |
|
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van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
The influence of crystal thickness on the image tone |
2003 |
Journal of imaging science |
47 |
|
UA library record; WoS full record; WoS citing articles |
|
|
van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Bollen, D.; de Keyzer, R.; van Roost, C. |
Influence of twinning on the morphology of AgBr and AgCl microcrystals |
2001 |
The journal of imaging science and technology |
45 |
|
UA library record; WoS full record; WoS citing articles |
|
|
Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. |
Laser thermotreatment of the SnO2layers |
1998 |
Eurosensors XII, vols 1 and 2 |
|
|
UA library record; WoS full record; |
|
|
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
New intermediate defect configuration in Si studied by in situ HREM irradiation |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
|
|
Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J. |
Ordering and defects in BanTaxTiyO3n ternary oxides |
1994 |
Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences |
|
|
UA library record; WoS full record; |
|
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Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. |
Quantitative EFTEM study of germanium quantum dots |
2001 |
|
|
|
UA library record; WoS full record; |
|
|
Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. |
Stress analysis with convergent beam electron diffraction around NMOS transistors |
2001 |
|
|
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UA library record; WoS full record; |
|
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Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Korothushenko, K.G.; Smolin, A.A. |
Structural studies of nanocrystalline diamond thin films |
1997 |
Materials science forum |
239-241 |
|
UA library record; WoS full record; |
|
|
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. |
The study of partially ordered 11/20 alloys by HREM |
1993 |
Microscopy research and technique |
25 |
|
UA library record; WoS full record |
|
|
Vanhellemont, J.; Bender, H.; van Landuyt, J. |
TEM studies of processed Si device materials |
1997 |
Conference series of the Institute of Physics |
157 |
|
UA library record; WoS full record; |
|