Home << 1 2 3 4 5 6 >>
List View
 | 
Citations
 | 
Details
   web
Author Title Year Publication Volume Times cited (down) Additional Links
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope 1996 Materials Research Society symposium proceedings 404 1 UA library record; WoS full record; WoS citing articles
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; Mommaert, C.; Severne, G. Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy 1993 Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 67 1 UA library record; https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993; WoS full record; WoS citing articles
Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. Some examples of electron microscopy studies of microstructures and phase transitions in solids 1995 Meccanica 30 1 UA library record; WoS full record; WoS citing articles
De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers 1999 Microelectronic engineering 45 UA library record; WoS full record
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation 2001 Institute of physics conference series UA library record; WoS full record;
van Landuyt, J.; Van Tendeloo, G. Charcaterization by high-resolution transmission electron microscopy 1998 UA library record; WoS full record;
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy 2001 Materials science in semiconductor processing 4 UA library record; WoS full record
De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy 2002 UA library record; WoS full record;
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation 1999 Institute of physics conference series T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. Comparative study of structural properties and photoluminescence in InGaN layers with a high In content 2000 Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS 5 UA library record; WoS full record;
van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. Crystallography of fullerites and related graphene textures 1994 Materials science forum 150/151 UA library record; WoS full record;
Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study 2000 UA library record; WoS full record;
van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. Defect related growth of tabular AgCl(100) crystals: a TEM study 1998 UA library record; WoS full record;
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. Direct observation of clusters in some FCC alloys by HREM 1994 Icem 13 UA library record; WoS full record;
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. EFTEM study of plasma etched low-k Si-O-C dielectrics 2001 Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Goessens, C.; Schryvers, D.; van Dyck, D.; van Landuyt, J.; de Keyzer, R. Electron diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals 1994 Icem 13 UA library record; WoS full record;
Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C. EM study of sensitisation of silver halide grains 1994 Icem 13 UA library record; WoS full record;
Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Le Tanner HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited) 1994 UA library record; WoS full record;
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. HREM investigation of a Fe/GaN/Fe tunnel junction 2001 Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England UA library record; WoS full record;
Nistor, L.C.; van Landuyt, J.; Dincã, G. HREM of defects in cubic boron nitride single crystals 1998 UA library record; WoS full record;
van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. The influence of crystal thickness on the image tone 2003 Journal of imaging science 47 UA library record; WoS full record; WoS citing articles
van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Bollen, D.; de Keyzer, R.; van Roost, C. Influence of twinning on the morphology of AgBr and AgCl microcrystals 2001 The journal of imaging science and technology 45 UA library record; WoS full record; WoS citing articles
Rembeza, S.I.; Loginov, V.A.; Svistova, T.V.; Podkopaeva, O.I.; Rembeza, E.S.; van Landuyt, J. Laser thermotreatment of the SnO2layers 1998 Eurosensors XII, vols 1 and 2 UA library record; WoS full record;
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. New intermediate defect configuration in Si studied by in situ HREM irradiation 1997 Conference series of the Institute of Physics 157 UA library record; WoS full record;
Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J. Ordering and defects in BanTaxTiyO3n ternary oxides 1994 Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences UA library record; WoS full record;
Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. Quantitative EFTEM study of germanium quantum dots 2001 UA library record; WoS full record;
Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. Stress analysis with convergent beam electron diffraction around NMOS transistors 2001 UA library record; WoS full record;
Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Korothushenko, K.G.; Smolin, A.A. Structural studies of nanocrystalline diamond thin films 1997 Materials science forum 239-241 UA library record; WoS full record;
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. The study of partially ordered 11/20 alloys by HREM 1993 Microscopy research and technique 25 UA library record; WoS full record
Vanhellemont, J.; Bender, H.; van Landuyt, J. TEM studies of processed Si device materials 1997 Conference series of the Institute of Physics 157 UA library record; WoS full record;