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  Author Title Year Publication Volume Times cited Additional Links Links
Amelinckx, S.; Bernaerts, D.; Van Tendeloo, G.; van Landuyt, J.; Lucas, A.A.; Mathot, M.; Lambin, P. The morphology, structure and texture of carbon nanotubes: an electron microscopy study 1995 UA library record
Bernaerts, D.; Amelinckx, S.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J. Structural aspects of carbon nanotubes 1995 UA library record
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM 1999 Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171 40 UA library record; WoS full record; WoS citing articles doi
Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. Electron microscopy: principles and fundamentals 1997 UA library record
Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. Handbook of microscopy: applications in materials science, solid-state physics and chemistry 1997 UA library record
van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J. Microscopy of gemmological materials 1997 4 UA library record; WoS full record; WoS citing articles
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization 2000 Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA 338-3 2 UA library record; WoS full record; WoS citing articles
van Landuyt, J.; Van Tendeloo, G. Charcaterization by high-resolution transmission electron microscopy 1998 UA library record; WoS full record;
Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study 2000 UA library record; WoS full record;
Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C. The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals 2000 UA library record; WoS full record;
Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. Quantitative EFTEM study of germanium quantum dots 2001 UA library record; WoS full record;
Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. Stress analysis with convergent beam electron diffraction around NMOS transistors 2001 UA library record; WoS full record;
Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. Comparative study of structural properties and photoluminescence in InGaN layers with a high In content 2000 Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS 5 UA library record; WoS full record; pdf
Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation 1997 UA library record
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. HREM investigation of a Fe/GaN/Fe tunnel junction 2001 Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England UA library record; WoS full record;
Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope 1995 Materials science and technology 11 7 UA library record; WoS full record; WoS citing articles pdf doi
Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. Reliability of copper dual damascene influenced by pre-clean 2002 Analysis Of Integrated Circuits 5 UA library record; WoS full record; WoS citing articles doi
van Landuyt, J. High resolution electron microscopy for materials 1992 7 UA library record; WoS full record; WoS citing articles
Goessens, C.; Schryvers, D.; de Keyzer, R.; van Landuyt, J. In situ HREM study of electron irradiation effects in AgCl microcrystals 1992 UA library record
de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM 2001 Physica: B : condensed matter T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY 308 3 UA library record; WoS full record; WoS citing articles pdf doi
Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization 1996 Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr 112 9 UA library record; WoS full record; WoS citing articles doi
Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry 1993 Applied surface science T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE 63 13 UA library record; WoS full record; WoS citing articles pdf doi
Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ 1996 Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France 120 2 UA library record; WoS full record; WoS citing articles doi
van Landuyt, J.; Vanhellemont, J. High-resolution electron microscopy for semiconducting materials science 1994 UA library record
van Landuyt, J. The evolution of HVEM application in antwerp 1991 Ultramicroscopy T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan 39 UA library record; WoS full record doi
Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. Electron microscopy of fullerenes and fullerene related structures 1994 UA library record
Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Le Tanner HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited) 1994 UA library record; WoS full record;
Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer 2000 Applied physics letters 77 44 UA library record; WoS full record; WoS citing articles pdf doi
Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing 1998 Applied physics letters 72 16 UA library record; WoS full record; WoS citing articles pdf doi
Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays 1999 Applied physics letters 75 481 UA library record; WoS full record; WoS citing articles pdf doi
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