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Author Saberi-Pouya, S.; Zarenia, M.; Perali, A.; Vazifehshenas, T.; Peeters, F.M.
Title High-temperature electron-hole superfluidity with strong anisotropic gaps in double phosphorene monolayers Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 97 Issue 17 Pages 174503
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Excitonic superfluidity in double phosphorene monolayers is investigated using the BCS mean-field equations. Highly anisotropic superfluidity is predicted where we found that the maximum superfluid gap is in the Bose-Einstein condensate (BEC) regime along the armchair direction and in the BCS-BEC crossover regime along the zigzag direction. We estimate the highest Kosterlitz-Thouless transition temperature with maximum value up to similar to 90 K with onset carrier densities as high as 4 x 10(12) cm(-2). This transition temperature is significantly larger than what is found in double electron-hole few-layers graphene. Our results can guide experimental research toward the realization of anisotropic condensate states in electron-hole phosphorene monolayers.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000431986100002 Publication Date 2018-05-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 17 Open Access
Notes ; We thank David Neilson for helpful discussions. This work was partially supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem program of the Flemish government and Iran Ministry of Science, Research and Technology. ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:151533UA @ admin @ c:irua:151533 Serial 5028
Permanent link to this record
 
 
Author Zhang, S.-H.; Yang, W.; Peeters, F.M.
Title Veselago focusing of anisotropic massless Dirac fermions Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 97 Issue 20 Pages 205437
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Massless Dirac fermions (MDFs) emerge as quasiparticles in various novel materials such as graphene and topological insulators, and they exhibit several intriguing properties, of which Veselago focusing is an outstanding example with a lot of possible applications. However, up to now Veselago focusing merely occurred in p-n junction devices based on the isotropic MDF, which lacks the tunability needed for realistic applications. Here, motivated by the emergence of novel Dirac materials, we investigate the propagation behaviors of anisotropic MDFs in such a p-n junction structure. By projecting the Hamiltonian of the anisotropic MDF to that of the isotropic MDF and deriving an exact analytical expression for the propagator, precise Veselago focusing is demonstrated without the need for mirror symmetry of the electron source and its focusing image. We show a tunable focusing position that can be used in a device to probe masked atom-scale defects. This study provides an innovative concept to realize Veselago focusing relevant for potential applications, and it paves the way for the design of novel electron optics devices by exploiting the anisotropic MDF.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000433026700005 Publication Date 2018-05-22
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 9 Open Access
Notes ; This work was supported by the National Key R&D Program of China (Grant No. 2017YFA0303400), the NSFC (Grants No. 11504018 and No. 11774021), the MOST of China (Grant No. 2014CB848700), and the NSFC program for “Scientific Research Center” (Grant No. U1530401). Support by the bilateral project (FWO-MOST) is gratefully acknowledged. S.H.Z. is also supported by “the Fundamental Research Funds for the Central Universities (ZY1824).” We acknowledge the computational support from the Beijing Computational Science Research Center (CSRC). ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:151501UA @ admin @ c:irua:151501 Serial 5047
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Author Kalashami, H.G.; Neek-Amal, M.; Peeters, F.M.
Title Slippage dynamics of confined water in graphene oxide capillaries Type A1 Journal article
Year 2018 Publication Physical review materials Abbreviated Journal
Volume 2 Issue 7 Pages 074004
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The permeation of water between neighboring graphene oxide (GO) flakes, i.e., 2D nanochannels, are investigated using a simple model for the GO membrane. We simulate the hydrophilic behavior of nanocapillaries and study the effect of surface charge on the dynamical properties of water flow and the influence of Na+ and Cl- ions on water permeation. Our approach is based on extensive equilibrium molecular dynamics simulations to obtain a better understanding of water permeation through charged nanochannels in the presence of ions. We found significant change in the slippage dynamics of confined water such as a profound increase in viscosity/slip length with increasing charges over the surface. The slip length decreases one order of magnitude (i.e., 1/30) with increasing density of surface charge, while it increases by a factor of 2 with ion concentration. We found that commensurability induced by nanoconfinement plays an important role on the intrinsic dynamical properties of water.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication College Park, Md Editor
Language Wos 000439435200006 Publication Date 2018-07-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2475-9953 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes ; We acknowledge fruitful discussions with Andre K. Geim, Irina Grigorieva, and Rahul R. Nair. This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem program. ; Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:152409UA @ admin @ c:irua:152409 Serial 5128
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Author Van der Donck, M.; Peeters, F.M.
Title Rich many-body phase diagram of electrons and holes in doped monolayer transition metal dichalcogenides Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 98 Issue 11 Pages 115432
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We use a variational technique to study the many-body phase diagram of electrons and holes in n-doped and p-doped monolayer transition metal dichalcogenides (TMDs). We find a total of four different phases. (i) A fully spin polarized and valley polarized ferromagnetic state. (ii) A state with no global spin polarization but with spin polarization in each valley separately, i.e., spin-valley locking. (iii) A state with spin polarization in one of the valleys and little to no spin polarization in the other valley. (iv) A paramagnetic state with no valley polarization. These phases are separated by first-order phase transitions and are determined by the particle density and the dielectric constant of the substrate. We find that in the presence of a perpendicular magnetic field the four different phases persist. In the case of n-doped MoS2, a fifth phase, which is completely valley polarized but not spin polarized, appears for magnetic fields larger than 7 T and for magnetic fields larger than 23 T completely replaces the second phase.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000445507000009 Publication Date 2018-09-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 8 Open Access
Notes ; This work was supported by the Research Foundation of Flanders (FWO-Vl) through an aspirant research grant for MVDD and by the FLAG-ERA project TRANS-2D-TMD. ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:153622UA @ admin @ c:irua:153622 Serial 5125
Permanent link to this record
 
 
Author Van Pottelberge, R.; Zarenia, M.; Peeters, F.M.
Title Magnetic field dependence of atomic collapse in bilayer graphene Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 98 Issue 11 Pages 115406
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract The spectrum of a Coulomb impurity in bilayer graphene is investigated as function of the strength of a perpendicular magnetic field for different values of the angular quantum number m and for different values of the gate voltage. We point out fundamental differences between the results from the two-band and four-band model. The supercritical instability and fall-to-center phenomena are investigated in the presence of a magnetic field. We find that in the four-band model the fall-to-center phenomenon occurs as in monolayer graphene, while this is not the case in the two-band model. We find that in a magnetic field the supercritical instability manifests itself as a series of anticrossings in the hole part of the spectrum for states coming from the low-energy band. However, we also find very distinct anticrossings in the electron part of the spectrum that continue into the hole part, which are related to the higher energy band of the four-band model. At these anticrossings, we find a very sharp peak in the probability density close to the impurity, reminiscent for the fall-to-center phenomenon. In this paper, these peculiar and interesting effects are studied for different magnetic field, interlayer coupling, and bias potential strengths.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000443671900010 Publication Date 2018-09-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 3 Open Access
Notes ; We thank Matthias Van der Donck and Ben Van Duppen for fruitful discussions. This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem funding of the Flemish Government. ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:153654UA @ admin @ c:irua:153654 Serial 5113
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Author Van der Donck, M.; Peeters, F.M.
Title Interlayer excitons in transition metal dichalcogenide heterostructures Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 98 Issue 11 Pages 115104
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Starting from the single-particle Dirac Hamiltonian for charge carriers in monolayer transition metal dichalcogenides (TMDs), we construct a four-band Hamiltonian describing interlayer excitons consisting of an electron in one TMD layer and a hole in the other TMD layer. An expression for the electron-hole interaction potential is derived, taking into account the effect of the dielectric environment above, below, and between the two TMD layers as well as polarization effects in the transition metal layer and in the chalcogen layers of the TMD layers. We calculate the interlayer exciton binding energy and average in-plane interparticle distance for different TMD heterostructures. The effect of different dielectric environments on the exciton binding energy is investigated and a remarkable dependence on the dielectric constant of the barrier between the two layers is found, resulting from competing effects as a function of the in-plane and out-of-plane dielectric constants of the barrier. The polarization effects in the chalcogen layers, which in general reduce the exciton binding energy, can lead to an increase in binding energy in the presence of strong substrate effects by screening the substrate. The excitonic absorbance spectrum is calculated and we show that the interlayer exciton peak depends linearly on a perpendicular electric field, which agrees with recent experimental results.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000443671900004 Publication Date 2018-09-04
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 41 Open Access
Notes ; This work was supported by the Research Foundation of Flanders (FWO-Vl) through an aspirant research grant for MVDD and by the FLAG-ERA project TRANS-2D-TMD. ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:153653UA @ admin @ c:irua:153653 Serial 5110
Permanent link to this record
 
 
Author Aierken, Y.; Leenaerts, O.; Peeters, F.M.
Title First-principles study of the stability and edge stress of nitrogen-decorated graphene nanoribbons Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 97 Issue 23 Pages 235436
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Edge functionalization of graphene nanoribbons with nitrogen atoms for various adatom configurations at armchair and zigzag edges are investigated. We provide comprehensive information on the electronic and magnetic properties and investigate the stability of the various systems. Two types of rippling of the nanoribbons, namely edge and bulk rippling depending on the sign of edge stress induced at the edge, are found. They are found to play the decisive role for the stability of the structures. We also propose a type of edge decoration in which every third nitrogen adatom at the zigzag edges is replaced by an oxygen atom. In this way, the electron count is compatible with a full aromatic structure, leading to additional stability and a disappearance of magnetism that is usually associated with zigzag nanoribbons.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000436192300006 Publication Date 2018-06-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 1 Open Access
Notes ; This work was supported by the Fonds Wetenschappelijk Onderzoek (FWO-Vl). The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center), funded by the Research Foundation – Flanders (FWO) and the Flemish Government – department EWI. ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:152478UA @ admin @ c:irua:152478 Serial 5104
Permanent link to this record
 
 
Author Yagmurcukardes, M.; Peeters, F.M.; Sahin, H.
Title Electronic and vibrational properties of PbI2: From bulk to monolayer Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 98 Issue 8 Pages 085431
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Using first-principles calculations, we study the dependence of the electronic and vibrational properties of multilayered PbI2 crystals on the number of layers and focus on the electronic-band structure and the Raman spectrum. Electronic-band structure calculations reveal that the direct or indirect semiconducting behavior of PbI2 is strongly influenced by the number of layers. We find that at 3L thickness there is a direct-to-indirect band gap transition (from bulk-to-monolayer). It is shown that in the Raman spectrum two prominent peaks, A(1g) and E-g, exhibit phonon hardening with an increasing number of layers due to the interlayer van der Waals interaction. Moreover, the Raman activity of the A(1g) mode significantly increases with an increasing number of layers due to the enhanced out-of-plane dielectric constant in the few-layer case. We further characterize rigid-layer vibrations of low-frequency interlayer shear (C) and breathing (LB) modes in few-layer PbI2. A reduced monatomic (linear) chain model (LCM) provides a fairly accurate picture of the number of layers dependence of the low-frequency modes and it is shown also to be a powerful tool to study the interlayer coupling strength in layered PbI2.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000442667200008 Publication Date 2018-08-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 41 Open Access
Notes ; Computational resources were provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). H.S. acknowledges financial support from the Scientific and Technological Research Council of Turkey (TUBITAK) under Project No. 117F095. Part of this work was supported by FLAG-ERA project TRANS-2D-TMD. ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:153716UA @ admin @ c:irua:153716 Serial 5097
Permanent link to this record
 
 
Author Van Pottelberge, R.; Van Duppen, B.; Peeters, F.M.
Title Electrical dipole on gapped graphene : bound states and atomic collapse Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 98 Issue 16 Pages 165420
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We investigate the energy spectrum, wave functions, and local density of states of an electrical dipole placed on a sheet of gapped graphene as function of the charge strength Z alpha for different sizes of the dipole and for different regularization parameters. The dipole is modeled as consisting of a positive and negative charge. Bound states are found within the gap region with some energy levels that anticross and others that cross as function of the impurity strength Z alpha. The anticrossings are more pronounced and move to higher charges Z alpha when the length of the dipole decreases. These energy levels turn into atomic collapse states when they enter the positive (or negative) energy continuum. A smooth transition from the single-impurity behavior to the dipole one is observed: The states diving towards the continuum in the single-impurity case are gradually replaced by a series of anticrossings that represent a continuation of the diving states in the single-impurity case. By studying the local density of states at the edge of the dipole we show how the series of anticrossings persist in the positive and negative continuum.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000447302700010 Publication Date 2018-10-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 8 Open Access
Notes ; We thank Matthias Van der Donck for fruitful discussions. This work was supported by the Research Foundation of Flanders (FWO-V1) through an aspirant research grant for R.V.P. and a postdoctoral grant for B.V.D. ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:154728UA @ admin @ c:irua:154728 Serial 5094
Permanent link to this record
 
 
Author Mulkers, J.; Hals, K.M.D.; Leliaert, J.; Milošević, M.V.; Van Waeyenberge, B.; Everschor-Sitte, K.
Title Effect of boundary-induced chirality on magnetic textures in thin films Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 98 Issue 6 Pages 064429
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract In the quest for miniaturizing magnetic devices, the effects of boundaries and surfaces become increasingly important. Here we show how the recently predicted boundary-induced Dzyaloshinskii-Moriya interaction (DMI) affects the magnetization of ferromagnetic films with a C-infinity v symmetry and a perpendicular magnetic anisotropy. For an otherwise uniformly magnetized film, we find a surface twist when the magnetization in the bulk is canted by an in-plane external field. This twist at the surfaces caused by the boundary-induced DMI differs from the common canting caused by internal DMI observed at the edges of a chiral magnet. Furthermore, we find that the surface twist due to the boundary-induced DMI strongly affects the width of the domain wall at the surfaces. We also find that the skyrmion radius increases in the depth of the film, with the average size of the skyrmion increasing with boundary-induced DMI. This increase suggests that the boundary-induced DMI contributes to the stability of the skyrmion.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000443394600004 Publication Date 2018-08-31
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 9 Open Access
Notes ; The authors thank Matthias Sitte and Andre Thiaville for fruitful discussions. This work was supported by the Fonds Wetenschappelijk Onderzoek (FWO-Vlaanderen) through Project No. G098917N and the German Research Foundation (DFG) under the Project No. EV 196/2-1. J.L. is supported by the Ghent University Special Research Fund with a BOF postdoctoral fellowship. ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:153706UA @ admin @ c:irua:153706 Serial 5093
Permanent link to this record
 
 
Author Nakhaee, M.; Ketabi, S.A.; Peeters, F.M.
Title Dirac nodal line in bilayer borophene : tight-binding model and low-energy effective Hamiltonian Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 98 Issue 11 Pages 115413
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Bilayer hexagonal borophene, which is bound together through pillars, is a novel topological semimetal. Using density functional theory, we investigate its electronic band structure and show that it is a Dirac material which exhibits a nodal line. A tight-binding model was constructed based on the Slater-Koster approach, which accurately models the electronic spectrum. We constructed an effective four-band model Hamiltonian to describe the spectrum near the nodal line. This Hamiltonian can be used as a new platform to study the new properties of nodal line semimetals. We found that the nodal line is created by edge states and is very robust against perturbations and impurities. Breaking symmetries can split the nodal line, but cannot open a gap.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000443916200007 Publication Date 2018-09-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 19 Open Access
Notes ; This work was supported by the Methusalem program of the Flemish government and the graphene FLAG-ERA project TRANS-2D-TMD. ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:153649UA @ admin @ c:irua:153649 Serial 5090
Permanent link to this record
 
 
Author Müller-Caspary, K.; Duchamp, M.; Roesner, M.; Migunov, V.; Winkler, F.; Yang, H.; Huth, M.; Ritz, R.; Simson, M.; Ihle, S.; Soltau, H.; Wehling, T.; Dunin-Borkowski, R.E.; Van Aert, S.; Rosenauer, A.
Title Atomic-scale quantification of charge densities in two-dimensional materials Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 98 Issue 12 Pages 121408
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The charge density is among the most fundamental solid state properties determining bonding, electrical characteristics, and adsorption or catalysis at surfaces. While atomic-scale charge densities have as yet been retrieved by solid state theory, we demonstrate both charge density and electric field mapping across a mono-/bilayer boundary in 2D MoS2 by momentum-resolved scanning transmission electron microscopy. Based on consistency of the four-dimensional experimental data, statistical parameter estimation and dynamical electron scattering simulations using strain-relaxed supercells, we are able to identify an AA-type bilayer stacking and charge depletion at the Mo-terminated layer edge.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000445508200004 Publication Date 2018-09-24
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 10 Open Access OpenAccess
Notes ; K.M.-C. acknowledges funding from the Initiative and Network Fund of the Helmholtz Association (VH-NG-1317) within the framework of the Helmholtz Young Investigator Group moreSTEM at Forschungszentrum Julich, Germany. ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:153621 Serial 5078
Permanent link to this record
 
 
Author Torun, E.; Sahin, H.; Chaves, A.; Wirtz, L.; Peeters, F.M.
Title Ab initio and semiempirical modeling of excitons and trions in monolayer TiS3 Type A1 Journal article
Year 2018 Publication Physical review B Abbreviated Journal Phys Rev B
Volume 98 Issue 7 Pages 075419
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We explore the electronic and the optical properties of monolayer TiS3, which shows in-plane anisotropy and is composed of a chain-like structure along one of the lattice directions. Together with its robust direct band gap, which changes very slightly with stacking order and with the thickness of the sample, the anisotropic physical properties of TiS3 make the material very attractive for various device applications. In this study, we present a detailed investigation on the effect of the crystal anisotropy on the excitons and the trions of the TiS3 monolayer. We use many-body perturbation theory to calculate the absorption spectrum of anisotropic TiS3 monolayer by solving the Bethe-Salpeter equation. In parallel, we implement and use a Wannier-Mott model for the excitons that takes into account the anisotropic effective masses and Coulomb screening, which are obtained from ab initio calculations. This model is then extended for the investigation of trion states of monolayer TiS3. Our calculations indicate that the absorption spectrum of monolayer TiS3 drastically depends on the polarization of the incoming light, which excites different excitons with distinct binding energies. In addition, the binding energies of positively and the negatively charged trions are observed to be distinct and they exhibit an anisotropic probability density distribution.
Address
Corporate Author Thesis
Publisher (up) American Physical Society Place of Publication New York, N.Y Editor
Language Wos 000442342100002 Publication Date 2018-08-21
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9969; 2469-9950 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.836 Times cited 10 Open Access
Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the FLAG-ERA project TRANS-2D-TMD. H.S. acknowledges financial support from TUBITAK under Project No. 117F095. A.C. acknowledges support from the Brazilian Research Council (CNPq), through the PRONEX/FUNCAP and Science Without Borders programs, and from the Lemann Foundation. E.T. and L.W. acknowledge support from the National Research Fund, Luxembourg (IN-TER/ANR/13/20/NANOTMD). ; Approved Most recent IF: 3.836
Call Number UA @ lucian @ c:irua:153721UA @ admin @ c:irua:153721 Serial 5076
Permanent link to this record
 
 
Author Petrovic, D.; Martens, T.; van Dijk, J.; Brok, W.J.M.; Bogaerts, A.
Title Modeling of a dielectric barrier discharge used as a flowing chemical reactor Type P1 Proceeding
Year 2008 Publication Abbreviated Journal
Volume Issue Pages 262-262
Keywords P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Astronomical Observatory Place of Publication Belgrade Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume 2008 Series Issue 84 Edition
ISSN 978-86-80019-27-7; 0373-3742 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95700 Serial 2114
Permanent link to this record
 
 
Author Nerantzaki, M.; Filippousi, M.; Van Tendeloo, G.; Terzopoulou, Z.; Bikiaris, D.; Goudouri, O.M.; Detsch, R.; Grueenewald, A.; Boccaccini, A.R.
Title Novel poly(butylene succinate) nanocomposites containing strontium hydroxyapatite nanorods with enhanced osteoconductivity for tissue engineering applications Type A1 Journal article
Year 2015 Publication Express polymer letters Abbreviated Journal Express Polym Lett
Volume 9 Issue 9 Pages 773-789
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Three series of poly(butylene succinate) (PBSu) nanocomposites containing 0.5, 1 and 2.5 wt% strontium hydroxyapatite [Sr-5(PO4)(3)OH] nanorods (SrHAp nrds) were prepared by in situ polymerisation. The structural effects of Sr-5(PO4)(3)OH nanorods, for the different concentrations, inside the polymeric matrix (PBSu), were studied through high angle annular dark field scanning transmission electron microscopy (HAADF-STEM). HAADF-STEM measurements revealed that the SrHAp nanorods at low concentrations are dispersed inside the polymeric PBSu matrix while in 1 wt% some aggregates are formed. These aggregations affect the mechanical properties giving an enhancement for the concentration of 0.5 wt% SrHAp nrds in tensile strength, while a reduction is recorded for higher loadings of the nanofiller. Studies on enzymatic hydrolysis revealed that all nanocomposites present higher hydrolysis rates than neat PBSu, indicating that nanorods accelerate the hydrolysis degradation process. In vitro bioactivity tests prove that SrHAp nrds promote the formation of hydroxyapatite on the PBSu surface. All nanocomposites were tested also in relevant cell culture using osteoblast-like cells (MG-63) to demonstrate their biocompatibility showing SrHAp nanorods support cell attachment.
Address
Corporate Author Thesis
Publisher (up) Budapest University of Technology and Economics Department of Polymer Engineering Place of Publication Budapest, Hungary Editor
Language Wos 000357287800004 Publication Date 2015-06-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1788-618X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.983 Times cited 21 Open Access
Notes 262348 Esmi Approved Most recent IF: 2.983; 2015 IF: 2.761
Call Number c:irua:127009 Serial 2382
Permanent link to this record
 
 
Author Devreese, J.T.; Verbist, G.; Peeters, F.M.
Title Large bipolarons and high-Tc materials Type H3 Book chapter
Year 1995 Publication Abbreviated Journal
Volume Issue Pages 385-391
Keywords H3 Book chapter; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Abstract
Address
Corporate Author Thesis
Publisher (up) Cambridge University Press Place of Publication Cambridge Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:11700 Serial 1778
Permanent link to this record
 
 
Author Neyts, E.; Mao, M.; Eckert, M.; Bogaerts, A.
Title Modeling aspects of plasma-enhanced chemical vapor deposition of carbon-based materials Type H1 Book chapter
Year 2012 Publication Abbreviated Journal
Volume Issue Pages 245-290
Keywords H1 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher (up) CRC Press Place of Publication Boca Raton, Fla Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-1-4398-6676-4 Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:107843 Serial 2109
Permanent link to this record
 
 
Author Oleshko, V.; Gijbels, R.; Jacob, W.; Alfimov, M.
Title Complex structural and analytical characterization of silver halide photographic systems by means of analytical electron microscopy Type H3 Book chapter
Year 1994 Publication Abbreviated Journal
Volume Issue Pages 701-702
Keywords H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Editions de physique Place of Publication Les Ulis Editor
Language Wos A1994BE09X00327 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:8450 Serial 438
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Author Van Tendeloo, G.; Hervieu, M.; Chaillout, C.
Title Defect structure of Hg-based ceramic superconductors (invited) Type P1 Proceeding
Year 1994 Publication Sciences Abbreviated Journal
Volume Issue Pages 949-952
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Editions physique Place of Publication Les ulis Editor
Language Wos A1994BE09Y00462 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95940 Serial 621
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Author Cao, S.; Nishida, M.; Somsen, C.; Eggeler, G.; Schryvers, D.
Title 3D FIB/SEM study of Ni4Ti3 precipitates in Ni-Ti alloys with different thermal-mechanical histories Type P1 Proceeding
Year 2009 Publication Abbreviated Journal
Volume Issue Pages 02004,1-02004,6
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract The three-dimensional size, morphology and distribution of Ni4Ti3 precipitates growing in binary Ni-rich Ni-Ti alloys have been investigated via a slice view procedure in a Dual-Beam FIB/SEM system, in order to better stress-free Ni50.8Ti49.2 alloy with all four variants of precipitates and a compressed Ni51Ti49 alloy with aligned precipitates in one family were studied. The Ni4Ti3 precipitates reach a volume fraction of 9.6% in the reconstructed region of the stress-free alloy and 4.3% in the compressed one. In both cases, the mean volume, specific surface area, sphericity and aspect ratio of the precipitates are calculated and the Pair Distribution Functions of the precipitates are obtained. It is shown that most precipitates in the stress-free sample grow larger and have a more lenticular shape, while those in the compressed sample are more cylindrical. Deviations from these ideal shapes reveal internal steps in the stress-free sample and lamellae formation in the compressed one.
Address
Corporate Author Thesis
Publisher (up) Edp Place of Publication Coutaboeuf Editor
Language Wos 000274582300008 Publication Date 2009-08-31
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:81950 c:irua:81950 Serial 14
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Author Idrissi, H.; Schryvers, D.; Salje, E.K.H.; Zhang, H.; Carpenter, M.A.; Moya, X.
Title Pinning of the martensitic microstructures by dislocations in Cu74.08Al23.13Be2.79 Type P1 Proceeding
Year 2009 Publication Abbreviated Journal
Volume Issue Pages 02029,1-02029,5
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract A single crystal of Cu74.08Al23.13Be2.79 undergoes a martensitic phase transition at 246K and 232K under heating and cooling, respectively. Surprisingly, the martensite phase is elastically much harder than the austenite phase showing that interfaces between various crystallographic variants are strongly pinned and can not be moved by external stress while the phase boundary between the austenite and martensite regions in the sample remains mobile. This unusual behavior was revealed by Dynamical Mechanical Analysis and Resonant Ultrasound Spectroscopy. Transmission Electron Microscopy shows that the pinning is generated by dislocations, which are inherited from the austenite phase. Such dislocations can hinder the movement of stacking faults in the 18R martensite structure or twin boundaries between martensite variants.
Address
Corporate Author Thesis
Publisher (up) Edp Place of Publication Coutaboeuf Editor
Language Wos 000274582300033 Publication Date 2009-08-31
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:81952 Serial 2626
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Author Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A.
Title Theoretical study of silicene and germanene Type P1 Proceeding
Year 2013 Publication Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 Abbreviated Journal
Volume Issue Pages
Keywords P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The structural and electronic properties of silicene and germanene on metallic and non-metallic substrates are investigated theoretically, using first-principles simulations. We first study the interaction of silicene with Ag(111) surfaces, focusing on the (4x4) silicene/Ag structure. Due to symmetry breaking in the silicene layer (nonequivalent number of top and bottom Si atoms), silicene is predicted to be semiconducting, with a computed energy gap of about 0.3 eV. However, the charge transfer occurring at the silicene/Ag(111) interface leads to an overall metallic system. We next investigate the interaction of silicene and germanene with hexagonal non-metallic substrates, namely ZnS and ZnSe. On reconstructed (semiconducting) (0001) ZnS or ZnSe surfaces, silicene and germanene are found to be semiconducting. Remarkably, the nature (indirect or direct) and magnitude of their energy band gap can be controlled by an out-of-plane electric field.
Address
Corporate Author Thesis
Publisher (up) Electrochemical soc inc Place of Publication Pennington Editor
Language Wos 000354468000006 Publication Date 2013-05-02
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-1-60768-374-2; 978-1-62332-023-2 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 6 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:134451 Serial 4529
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Author Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N.
Title Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations Type P1 Proceeding
Year 2017 Publication Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar Abbreviated Journal
Volume Issue Pages 303-311
Keywords P1 Proceeding; Engineering sciences. Technology; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first-principles calculations with Non-Equilibrium Green functions transport simulations. The intrinsic contact resistivity is found to saturate at similar to 2x10(-10) Omega.cm(2) with the doping concentration and sets an intrinsic limit to the ultimate contact resistance achievable for n-doped Si vertical bar amorphous-TiSi. This limit arises from the intrinsic properties of the semiconductor and of the metal such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting metals with a heavy electron effective mass helps reducing the interface intrinsic contact resistivity.
Address
Corporate Author Thesis
Publisher (up) Electrochemical soc inc Place of Publication Pennington Editor
Language Wos 000426271800028 Publication Date 2017-10-17
Series Editor Series Title Abbreviated Series Title
Series Volume 80 Series Issue 1 Edition
ISSN 978-1-62332-470-4; 978-1-60768-818-1 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 1 Open Access Not_Open_Access
Notes ; ; Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:149966 Serial 4976
Permanent link to this record
 
 
Author Goux, L.; Fantini, A.; Govoreanu, B.; Kar, G.; Clima, S.; Chen, Y.-Y.; Degraeve, R.; Wouters, D.J.; Pourtois, G.; Jurczak, M.
Title Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems Type A1 Journal article
Year 2012 Publication ECS solid state letters Abbreviated Journal Ecs Solid State Lett
Volume 1 Issue 4 Pages 63-65
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this letter, we address the bipolar resistive switching phenomenology in scaled TiN\HfO2\Hf cells. By means of stack engineering using a thin Al2O3 layer inserted either at the TiN\HfO2 or at the Hf\HfO2 interface, we demonstrate that the reset operation takes place close to the TiNanode. Due to the increase of the oxygen-vacancy profile from the TiN to the Hf interface, the filament-confining and wide band-gap Al2O3 layer should indeed be engineered at the interface with the TiN electrode in order to further improve the switching control and to allow reaching larger state resistances. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.003204ssl] All rights reserved.
Address
Corporate Author Thesis
Publisher (up) Electrochemical society Place of Publication Pennington (N.J.) Editor
Language Wos 000318340300005 Publication Date 2012-08-23
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-8742;2162-8750; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.184 Times cited 11 Open Access
Notes Approved Most recent IF: 1.184; 2012 IF: NA
Call Number UA @ lucian @ c:irua:108530 Serial 160
Permanent link to this record
 
 
Author Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.;
Title Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates Type A1 Journal article
Year 2013 Publication ECS solid state letters Abbreviated Journal Ecs Solid State Lett
Volume 2 Issue 11 Pages P104-P106
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O-3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O-3 reaction at 50 degrees C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm(2) is achieved from SiH4 at 500 degrees C. (C) 2013 The Electrochemical Society. All rights reserved.
Address
Corporate Author Thesis
Publisher (up) Electrochemical society Place of Publication Pennington (N.J.) Editor
Language Wos 000324582600006 Publication Date 2013-09-06
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-8742;2162-8750; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.184 Times cited 12 Open Access
Notes Approved Most recent IF: 1.184; 2013 IF: 0.781
Call Number UA @ lucian @ c:irua:111208 Serial 1070
Permanent link to this record
 
 
Author Sankaran, K.; Clima, S.; Mees, M.; Pourtois, G.
Title Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations Type A1 Journal article
Year 2015 Publication ECS journal of solid state science and technology Abbreviated Journal Ecs J Solid State Sc
Volume 4 Issue 4 Pages N3127-N3133
Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract The bulk properties of elementary metals and copper based binary alloys have been investigated using automated first-principles simulations to evaluate their potential to replace copper and tungsten as interconnecting wires in the coming CMOS technology nodes. The intrinsic properties of the screened candidates based on their cohesive energy and on their electronic properties have been used as a metrics to reflect their resistivity and their sensitivity to electromigration. Using these values, the 'performances' of the alloys have been benchmarked with respect to the Cu and W ones. It turns out that for some systems, alloying Cu with another element leads to a reduced tendency to electromigration. This is however done at the expense of a decrease of the conductivity of the alloy with respect to the bulk metal. (C) 2014 The Electrochemical Society. All rights reserved.
Address
Corporate Author Thesis
Publisher (up) Electrochemical society Place of Publication Pennington (N.J.) Editor
Language Wos 000349547900018 Publication Date 2014-11-19
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-8769;2162-8777; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.787 Times cited 19 Open Access
Notes Approved Most recent IF: 1.787; 2015 IF: 1.558
Call Number c:irua:125296 Serial 1150
Permanent link to this record
 
 
Author Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M.
Title Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations Type A1 Journal article
Year 2018 Publication ECS journal of solid state science and technology Abbreviated Journal Ecs J Solid State Sc
Volume 7 Issue 6 Pages N73-N80
Keywords A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped n-type 2D and 3D semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first principles calculations with Non-Equilibrium Green functions transport simulations. The evolution of the intrinsic contact resistivity with the doping concentration is found to saturate at similar to 2 x 10(-10) Omega.cm(2) for the case of TiSi and imposes an intrinsic limit to the ultimate contact resistance achievable for n-doped Silamorphous-TiSi (aTiSi). The limit arises from the intrinsic properties of the semiconductors and of the metals such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting heavy electron effective mass metals with semiconductor helps reducing the interface intrinsic contact resistivity. This observation seems to hold true regardless of the 3D character of the semiconductor, as illustrated for the case of three 2D semiconducting materials, namely MoS2, ZrS2 and HfS2. (C) The Author(s) 2018. Published by ECS.
Address
Corporate Author Thesis
Publisher (up) Electrochemical society Place of Publication Pennington (N.J.) Editor
Language Wos 000440836000004 Publication Date 2018-05-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-8769; 2162-8777 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.787 Times cited 2 Open Access Not_Open_Access
Notes ; The authors thank the imec core CMOS program members, the European Commission, its TAKEMI5 ECSEL research project and the local authorities for their support. ; Approved Most recent IF: 1.787
Call Number UA @ lucian @ c:irua:153205UA @ admin @ c:irua:153205 Serial 5130
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Author Van Bockstal, L.; Mahy, M.; de Keyser, A.; Hoeks, W.; Herlach, F.; Peeters, F.M.; Van de Graaf, W.; Borghs, G.
Title Cyclotron-resonance of 2d electrons at Si-\delta-doped InSb layers grown on GaAs Type A1 Journal article
Year 1995 Publication Physica: B : condensed matter Abbreviated Journal Physica B
Volume 211 Issue 1-4 Pages 466-469
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level.
Address
Corporate Author Thesis
Publisher (up) Elsevier Place of Publication Amsterdam Editor
Language Wos A1995RD54400121 Publication Date 2003-05-01
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.319 Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95914 Serial 601
Permanent link to this record
 
 
Author Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L.
Title Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France Abbreviated Journal Nucl Instrum Meth B
Volume 120 Issue 1-4 Pages 186-189
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Address
Corporate Author Thesis
Publisher (up) Elsevier Place of Publication Amsterdam Editor
Language Wos A1996VZ24500040 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95882 Serial 947
Permanent link to this record
 
 
Author Lok, J.G.S.; Geim, A.K.; Maan, J.C.; Marmorkos, I.; Peeters, F.M.; Mori, N.; Eaves, L.; McDonnell, P.; Henini, M.; Sakai, J.W.; Main, P.C.;
Title Resonant tunnelling through D- states Type A1 Journal article
Year 1996 Publication Surface science : a journal devoted to the physics and chemistry of interfaces T2 – 11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI), August 07-11, 1995, Univ. Nottingham, Nottingham, England Abbreviated Journal Surf Sci
Volume 362 Issue 1-3 Pages 247-250
Keywords A1 Journal article; Condensed Matter Theory (CMT)
Abstract We have studied tunnelling through Si donors incorporated in the quantum well of double barrier resonant tunnelling devices. In addition to a resonance associated with the ground state of a single donor (1s level), a novel donor-related resonance at a smaller binding energy is observed in high magnetic fields where it becomes dominant over the Is resonance. We attribute this novel feature to a D-minus state of a shallow donor.
Address
Corporate Author Thesis
Publisher (up) Elsevier Place of Publication Amsterdam Editor
Language Wos A1996UZ03300061 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0039-6028; ISBN Additional Links UA library record; WoS full record
Impact Factor 1.925 Times cited Open Access
Notes Approved INSTRUMENTS & INSTRUMENTATION 31/56 Q3 # NUCLEAR SCIENCE & TECHNOLOGY 9/32 Q2 # PHYSICS, PARTICLES & FIELDS 24/28 Q4 # SPECTROSCOPY 28/43 Q3 #
Call Number UA @ lucian @ c:irua:95892 Serial 2895
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