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	Author	Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L.
	Title	Interaction of a Ti-capped Co thin film with Si₃N₄			Type	A1 Journal article
	Year	2000	Publication	Applied physics letters	Abbreviated Journal	Appl Phys Lett
	Volume	77	Issue	26	Pages	4307-4309
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7].
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000166120500021	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	3.411	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 3.411; 2000 IF: 3.906
	Call Number	UA @ lucian @ c:irua:104225			Serial	1683
Permanent link to this record



	Author	Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F.
	Title	Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions			Type	A1 Journal article
	Year	2002	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
	Volume	92	Issue	8	Pages	4336-4341
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000178318000024	Publication Date	2002-10-07
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.068	Times cited	5	Open Access
	Notes				Approved	Most recent IF: 2.068; 2002 IF: 2.281
	Call Number	UA @ lucian @ c:irua:39872			Serial	2005
Permanent link to this record



	Author	Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J.
	Title	Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques			Type	A1 Journal article
	Year	2002	Publication	Journal of applied physics	Abbreviated Journal	J Appl Phys
	Volume	91	Issue	4	Pages	2493-2498
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics.
	Address
	Corporate Author				Thesis
	Publisher	American Institute of Physics	Place of Publication	New York, N.Y.	Editor
	Language		Wos	000173553800114	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.068	Times cited	27	Open Access
	Notes				Approved	Most recent IF: 2.068; 2002 IF: 2.281
	Call Number	UA @ lucian @ c:irua:103372			Serial	2542
Permanent link to this record



	Author	Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Le Tanner
	Title	HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited)			Type	P1 Proceeding
	Year	1994	Publication		Abbreviated Journal
	Volume		Issue		Pages	659-662
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Editions physique	Place of Publication	Les ulis	Editor
	Language		Wos	A1994BE09Y00320	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2-86883-226-1	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:95939			Serial	1502
Permanent link to this record



	Author	Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.
	Title	Electron microscopy of fullerenes and fullerene related structures			Type	P3 Proceeding
	Year	1994	Publication		Abbreviated Journal
	Volume		Issue		Pages	498-513
	Keywords	P3 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Electrochemical Society	Place of Publication	s.l.	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:10009			Serial	960
Permanent link to this record



	Author	Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L.
	Title	Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He⁺			Type	A1 Journal article
	Year	1996	Publication	Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France	Abbreviated Journal	Nucl Instrum Meth B
	Volume	120	Issue	1-4	Pages	186-189
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
	Address
	Corporate Author				Thesis
	Publisher	Elsevier	Place of Publication	Amsterdam	Editor
	Language		Wos	A1996VZ24500040	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0168-583X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.124	Times cited	2	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:95882			Serial	947
Permanent link to this record



	Author	van Landuyt, J.; Vanhellemont, J.
	Title	High-resolution electron microscopy for semiconducting materials science			Type	H3 Book chapter
	Year	1994	Publication		Abbreviated Journal
	Volume		Issue		Pages	1109-1147
	Keywords	H3 Book chapter; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Elsevier	Place of Publication	Amsterdam	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:10008			Serial	1449
Permanent link to this record



	Author	van Landuyt, J.
	Title	The evolution of HVEM application in antwerp			Type	A1 Journal article
	Year	1991	Publication	Ultramicroscopy T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan	Abbreviated Journal	Ultramicroscopy
	Volume	39	Issue	1-4	Pages	287-298
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies.
	Address
	Corporate Author				Thesis
	Publisher	Elsevier	Place of Publication	Amsterdam	Editor
	Language		Wos	A1991GY23100034	Publication Date	2002-10-18
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0304-3991;	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor	2.436	Times cited		Open Access
	Notes				Approved	PHYSICS, APPLIED 47/145 Q2 #
	Call Number	UA @ lucian @ c:irua:95973			Serial	3579
Permanent link to this record



	Author	de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E.
	Title	Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM			Type	A1 Journal article
	Year	2001	Publication	Physica: B : condensed matter T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY	Abbreviated Journal	Physica B
	Volume	308	Issue		Pages	294-297
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher	Elsevier science bv	Place of Publication	Amsterdam	Editor
	Language		Wos	000173660100073	Publication Date	2002-10-15
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.386	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 1.386; 2001 IF: 0.663
	Call Number	UA @ lucian @ c:irua:103389			Serial	345
Permanent link to this record



	Author	Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J.
	Title	Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization			Type	A1 Journal article
	Year	1996	Publication	Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr	Abbreviated Journal	Nucl Instrum Meth B
	Volume	112	Issue	1-4	Pages	325-329
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
	Address
	Corporate Author				Thesis
	Publisher	Elsevier science bv	Place of Publication	Amsterdam	Editor
	Language		Wos	A1996UW20100069	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0168-583X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.124	Times cited	9	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:95886			Serial	1742
Permanent link to this record



	Author	Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.;
	Title	Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry			Type	A1 Journal article
	Year	1993	Publication	Applied surface science T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE	Abbreviated Journal	Appl Surf Sci
	Volume	63	Issue	1-4	Pages	45-51
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.
	Address
	Corporate Author				Thesis
	Publisher	Elsevier science bv	Place of Publication	Amsterdam	Editor
	Language		Wos	A1993KF03400009	Publication Date	2002-10-16
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0169-4332;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	2.711	Times cited	13	Open Access
	Notes				Approved
	Call Number	UA @ lucian @ c:irua:104539			Serial	2932
Permanent link to this record



	Author	van Landuyt, J.
	Title	High resolution electron microscopy for materials			Type	H3 Book chapter
	Year	1992	Publication		Abbreviated Journal
	Volume		Issue		Pages	23-32
	Keywords	H3 Book chapter; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Eurem 92	Place of Publication	Granada	Editor
	Language		Wos	000166175900005	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	7	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:4097			Serial	1448
Permanent link to this record



	Author	Goessens, C.; Schryvers, D.; de Keyzer, R.; van Landuyt, J.
	Title	In situ HREM study of electron irradiation effects in AgCl microcrystals			Type	H3 Book chapter
	Year	1992	Publication		Abbreviated Journal
	Volume		Issue		Pages	646-650
	Keywords	H3 Book chapter; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Eurem 92	Place of Publication	Granada	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:4100			Serial	1580
Permanent link to this record



	Author	Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J.
	Title	Reliability of copper dual damascene influenced by pre-clean			Type	P1 Proceeding
	Year	2002	Publication	Analysis Of Integrated Circuits	Abbreviated Journal
	Volume		Issue		Pages	118-123
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Ieee	Place of Publication	New york	Editor
	Language		Wos	000177689400022	Publication Date	2003-06-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	5	Open Access
	Notes	Conference name:			Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:104170			Serial	2865
Permanent link to this record



	Author	Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
	Title	Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope			Type	A1 Journal article
	Year	1995	Publication	Materials science and technology	Abbreviated Journal	Mater Sci Tech-Lond
	Volume	11	Issue	11	Pages	1194-1202
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
	Address
	Corporate Author				Thesis
	Publisher	Inst Materials	Place of Publication	London	Editor
	Language		Wos	A1995TQ95100016	Publication Date	2014-01-09
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0267-0836;1743-2847;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	0.995	Times cited	7	Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:95911			Serial	2654
Permanent link to this record



	Author	Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G.
	Title	HREM investigation of a Fe/GaN/Fe tunnel junction			Type	A1 Journal article
	Year	2001	Publication	Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England	Abbreviated Journal
	Volume		Issue	169	Pages	53-56
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface.
	Address
	Corporate Author				Thesis
	Publisher	IOP Publishing	Place of Publication	Bristol	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-7503-0818-4	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95715			Serial	1503
Permanent link to this record



	Author	Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
	Title	Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation			Type	H3 Book chapter
	Year	1997	Publication		Abbreviated Journal
	Volume		Issue		Pages	63-92
	Keywords	H3 Book chapter; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Kluwer Academic	Place of Publication	s.l.	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:21412			Serial	1718
Permanent link to this record



	Author	Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al.
	Title	Comparative study of structural properties and photoluminescence in InGaN layers with a high In content			Type	A1 Journal article
	Year	2000	Publication	Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS	Abbreviated Journal	Mrs Internet J N S R
	Volume	5	Issue	s:[1]	Pages	art. no.-W11.38
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
	Address
	Corporate Author				Thesis
	Publisher	Materials research society	Place of Publication	Warrendale	Editor
	Language		Wos	000090103600097	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1092-5783	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:103471			Serial	423
Permanent link to this record



	Author	Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P.
	Title	Stress analysis with convergent beam electron diffraction around NMOS transistors			Type	P1 Proceeding
	Year	2001	Publication		Abbreviated Journal
	Volume		Issue		Pages	359-360
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Princeton University Press	Place of Publication	Princeton, N.J.	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1-58949-003-7	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95736			Serial	3176
Permanent link to this record



	Author	Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J.
	Title	Quantitative EFTEM study of germanium quantum dots			Type	P1 Proceeding
	Year	2001	Publication		Abbreviated Journal
	Volume		Issue		Pages	345-346
	Keywords	P1 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Rinton Press	Place of Publication	Princeton	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1-58949-003-7	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95716			Serial	2753
Permanent link to this record



	Author	Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B.
	Title	Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study			Type	P1 Proceeding
	Year	2000	Publication		Abbreviated Journal
	Volume		Issue		Pages	38-43
	Keywords	P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Defects in AgG tabular crystals with {111} surfaces are characterised by transmission electron microscopy (TEM) and their influence on the growth process is discussed. In the tabular crystals, twins parallel to the tabular face as well as dislocations along different directions are observed. The twins induce the tabular growth, while the dislocations do not influence the morphology. In 10 to 30% of the crystals that have been characterised, thickness growth is observed and it is shown that in all cases twins on other planes than the tabular ones are present. Two configurations occur more frequently and are analysed in detail. For the first group, twins parallel to the tabular face as well as a microtwin along a non-parallel {111} plane and ending inside the crystal are present. In the crystals of the second group only one extra non-parallel twin occurs giving rise to a bicrystal built up by a tetrahedral shaped part and a flat triangular or trapezoidal part. More complex twin configurations give rise to various, less characteristic morphologies.
	Address
	Corporate Author				Thesis
	Publisher	Soc imaging science technology	Place of Publication	Springfield	Editor
	Language		Wos	000183315900012	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-89208-229-1	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95777			Serial	617
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	Author	Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C.
	Title	The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals			Type	P1 Proceeding
	Year	2000	Publication		Abbreviated Journal
	Volume		Issue		Pages	167-171
	Keywords	P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Multishell tabular grains have a higher speed than pure AgBr tabular grains. Usually the shells differ in size and iodide content, but also the precipitation method for the iodide containing shells has an influence on the iodide incorporation. A TEM investigation was performed to determine the defect structure of multishell AgBr (111) tabular crystals containing a shell with a low iodide concentration and one with a high iodide concentration. The twins that induce tabular growth and stacking fault contrast in the region of the iodide shells have been observed, similar to previously studied AgBr/Ag(Br,I) coreshell crystals. Moreover in some of the crystals dislocations have been observed, sometimes even an entire network. The number of dislocations formed varies for the different methods of iodide addition. Also variations in average thickness between the different iodide addition methods have been observed. A higher number of dislocations and thicker crystals point towards a higher local concentration of iodide. These observations allow deciding which iodide incorporation method is most useful for a preferred dislocation pattern.
	Address
	Corporate Author				Thesis
	Publisher	Soc Imaging Science Technology	Place of Publication	Springfield	Editor
	Language		Wos	000183315900046	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0-89208-229-1	ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95774			Serial	3587
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	Author	van Landuyt, J.; Van Tendeloo, G.
	Title	Charcaterization by high-resolution transmission electron microscopy			Type	H3 Book chapter
	Year	1998	Publication		Abbreviated Journal
	Volume		Issue		Pages	187-190
	Keywords	H3 Book chapter; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Stt	Place of Publication	Den Haag	Editor
	Language		Wos	A1990DC39700012	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record;
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:29685			Serial	335
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	Author	Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al.
	Title	Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization			Type	A1 Journal article
	Year	2000	Publication	Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA	Abbreviated Journal	Mater Sci Forum
	Volume	338-3	Issue		Pages	309-312
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
	Address
	Corporate Author				Thesis
	Publisher	Trans tech publications ltd	Place of Publication	Zurich-uetikon	Editor
	Language		Wos	000165996700075	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0255-5476	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	2	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:104262			Serial	1071
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	Author	Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G.
	Title	Electron microscopy: principles and fundamentals			Type	ME1 Book as editor or co-editor
	Year	1997	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords	ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Vch	Place of Publication	Weinheim	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	3-527-29479-1	Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:22089			Serial	967
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	Author	Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G.
	Title	Handbook of microscopy: applications in materials science, solid-state physics and chemistry			Type	ME1 Book as editor or co-editor
	Year	1997	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords	ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Vch	Place of Publication	Weinheim	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	3-527-29280-2	Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:21417			Serial	1407
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	Author	van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J.
	Title	Microscopy of gemmological materials			Type	H3 Book chapter
	Year	1997	Publication		Abbreviated Journal
	Volume		Issue		Pages	293-320
	Keywords	H3 Book chapter; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Vch	Place of Publication	Weinheim	Editor
	Language		Wos	A1995BC72X00044	Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	4	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:21419			Serial	2037
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	Author	Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
	Title	Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM			Type	A1 Journal article
	Year	1999	Publication	Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland	Abbreviated Journal	Phys Status Solidi A
	Volume	171	Issue	1	Pages	147-157
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
	Address
	Corporate Author				Thesis
	Publisher	Wiley	Place of Publication	Berlin	Editor
	Language		Wos	000078539700020	Publication Date	2002-09-10
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0031-8965;1521-396X;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor		Times cited	40	Open Access
	Notes				Approved	Most recent IF: NA
	Call Number	UA @ lucian @ c:irua:95798			Serial	1152
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	Author	Amelinckx, S.; Bernaerts, D.; Van Tendeloo, G.; van Landuyt, J.; Lucas, A.A.; Mathot, M.; Lambin, P.
	Title	The morphology, structure and texture of carbon nanotubes: an electron microscopy study			Type	P3 Proceeding
	Year	1995	Publication		Abbreviated Journal
	Volume		Issue		Pages	515-541
	Keywords	P3 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	World Scientific	Place of Publication	Singapore	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved	no
	Call Number	UA @ lucian @ c:irua:13294			Serial	2207
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	Author	Bernaerts, D.; Amelinckx, S.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J.
	Title	Structural aspects of carbon nanotubes			Type	P3 Proceeding
	Year	1995	Publication		Abbreviated Journal
	Volume		Issue		Pages	551-555
	Keywords	P3 Proceeding; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	World Scientific	Place of Publication	Singapore	Editor
	Language		Wos		Publication Date	0000-00-00
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Additional Links	UA library record
	Impact Factor		Times cited		Open Access
	Notes				Approved
	Call Number	UA @ lucian @ c:irua:13295			Serial	3206
Permanent link to this record