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Author Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L.
Title Interaction of a Ti-capped Co thin film with Si3N4 Type A1 Journal article
Year 2000 Publication Applied physics letters Abbreviated Journal Appl Phys Lett
Volume 77 Issue 26 Pages 4307-4309
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7].
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000166120500021 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 3.411 Times cited 3 Open Access
Notes Approved Most recent IF: 3.411; 2000 IF: 3.906
Call Number UA @ lucian @ c:irua:104225 Serial 1683
Permanent link to this record
 
 
Author Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F.
Title Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions Type A1 Journal article
Year 2002 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 92 Issue 8 Pages 4336-4341
Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Abstract
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000178318000024 Publication Date 2002-10-07
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 5 Open Access
Notes Approved Most recent IF: 2.068; 2002 IF: 2.281
Call Number UA @ lucian @ c:irua:39872 Serial 2005
Permanent link to this record
 
 
Author Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J.
Title Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques Type A1 Journal article
Year 2002 Publication Journal of applied physics Abbreviated Journal J Appl Phys
Volume 91 Issue 4 Pages 2493-2498
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics.
Address
Corporate Author Thesis
Publisher (up) American Institute of Physics Place of Publication New York, N.Y. Editor
Language Wos 000173553800114 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.068 Times cited 27 Open Access
Notes Approved Most recent IF: 2.068; 2002 IF: 2.281
Call Number UA @ lucian @ c:irua:103372 Serial 2542
Permanent link to this record
 
 
Author Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Le Tanner
Title HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited) Type P1 Proceeding
Year 1994 Publication Abbreviated Journal
Volume Issue Pages 659-662
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Editions physique Place of Publication Les ulis Editor
Language Wos A1994BE09Y00320 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95939 Serial 1502
Permanent link to this record
 
 
Author Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.
Title Electron microscopy of fullerenes and fullerene related structures Type P3 Proceeding
Year 1994 Publication Abbreviated Journal
Volume Issue Pages 498-513
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Electrochemical Society Place of Publication s.l. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10009 Serial 960
Permanent link to this record
 
 
Author Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L.
Title Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France Abbreviated Journal Nucl Instrum Meth B
Volume 120 Issue 1-4 Pages 186-189
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract 6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Address
Corporate Author Thesis
Publisher (up) Elsevier Place of Publication Amsterdam Editor
Language Wos A1996VZ24500040 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited 2 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95882 Serial 947
Permanent link to this record
 
 
Author van Landuyt, J.; Vanhellemont, J.
Title High-resolution electron microscopy for semiconducting materials science Type H3 Book chapter
Year 1994 Publication Abbreviated Journal
Volume Issue Pages 1109-1147
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Elsevier Place of Publication Amsterdam Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:10008 Serial 1449
Permanent link to this record
 
 
Author van Landuyt, J.
Title The evolution of HVEM application in antwerp Type A1 Journal article
Year 1991 Publication Ultramicroscopy T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan Abbreviated Journal Ultramicroscopy
Volume 39 Issue 1-4 Pages 287-298
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies.
Address
Corporate Author Thesis
Publisher (up) Elsevier Place of Publication Amsterdam Editor
Language Wos A1991GY23100034 Publication Date 2002-10-18
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record
Impact Factor 2.436 Times cited Open Access
Notes Approved PHYSICS, APPLIED 47/145 Q2 #
Call Number UA @ lucian @ c:irua:95973 Serial 3579
Permanent link to this record
 
 
Author de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E.
Title Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM Type A1 Journal article
Year 2001 Publication Physica: B : condensed matter T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY Abbreviated Journal Physica B
Volume 308 Issue Pages 294-297
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.
Address
Corporate Author Thesis
Publisher (up) Elsevier science bv Place of Publication Amsterdam Editor
Language Wos 000173660100073 Publication Date 2002-10-15
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.386 Times cited 3 Open Access
Notes Approved Most recent IF: 1.386; 2001 IF: 0.663
Call Number UA @ lucian @ c:irua:103389 Serial 345
Permanent link to this record
 
 
Author Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J.
Title Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization Type A1 Journal article
Year 1996 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr Abbreviated Journal Nucl Instrum Meth B
Volume 112 Issue 1-4 Pages 325-329
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Address
Corporate Author Thesis
Publisher (up) Elsevier science bv Place of Publication Amsterdam Editor
Language Wos A1996UW20100069 Publication Date 2002-07-26
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 1.124 Times cited 9 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95886 Serial 1742
Permanent link to this record
 
 
Author Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.;
Title Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry Type A1 Journal article
Year 1993 Publication Applied surface science T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE Abbreviated Journal Appl Surf Sci
Volume 63 Issue 1-4 Pages 45-51
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.
Address
Corporate Author Thesis
Publisher (up) Elsevier science bv Place of Publication Amsterdam Editor
Language Wos A1993KF03400009 Publication Date 2002-10-16
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 2.711 Times cited 13 Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:104539 Serial 2932
Permanent link to this record
 
 
Author van Landuyt, J.
Title High resolution electron microscopy for materials Type H3 Book chapter
Year 1992 Publication Abbreviated Journal
Volume Issue Pages 23-32
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Eurem 92 Place of Publication Granada Editor
Language Wos 000166175900005 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:4097 Serial 1448
Permanent link to this record
 
 
Author Goessens, C.; Schryvers, D.; de Keyzer, R.; van Landuyt, J.
Title In situ HREM study of electron irradiation effects in AgCl microcrystals Type H3 Book chapter
Year 1992 Publication Abbreviated Journal
Volume Issue Pages 646-650
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Eurem 92 Place of Publication Granada Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:4100 Serial 1580
Permanent link to this record
 
 
Author Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J.
Title Reliability of copper dual damascene influenced by pre-clean Type P1 Proceeding
Year 2002 Publication Analysis Of Integrated Circuits Abbreviated Journal
Volume Issue Pages 118-123
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Ieee Place of Publication New york Editor
Language Wos 000177689400022 Publication Date 2003-06-25
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 5 Open Access
Notes Conference name: Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104170 Serial 2865
Permanent link to this record
 
 
Author Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A.
Title Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Type A1 Journal article
Year 1995 Publication Materials science and technology Abbreviated Journal Mater Sci Tech-Lond
Volume 11 Issue 11 Pages 1194-1202
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Address
Corporate Author Thesis
Publisher (up) Inst Materials Place of Publication London Editor
Language Wos A1995TQ95100016 Publication Date 2014-01-09
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0267-0836;1743-2847; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 0.995 Times cited 7 Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:95911 Serial 2654
Permanent link to this record
 
 
Author Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G.
Title HREM investigation of a Fe/GaN/Fe tunnel junction Type A1 Journal article
Year 2001 Publication Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England Abbreviated Journal
Volume Issue 169 Pages 53-56
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface.
Address
Corporate Author Thesis
Publisher (up) IOP Publishing Place of Publication Bristol Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-7503-0818-4 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95715 Serial 1503
Permanent link to this record
 
 
Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
Title Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation Type H3 Book chapter
Year 1997 Publication Abbreviated Journal
Volume Issue Pages 63-92
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Kluwer Academic Place of Publication s.l. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21412 Serial 1718
Permanent link to this record
 
 
Author Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al.
Title Comparative study of structural properties and photoluminescence in InGaN layers with a high In content Type A1 Journal article
Year 2000 Publication Internet journal of nitride semiconductor research T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS Abbreviated Journal Mrs Internet J N S R
Volume 5 Issue s:[1] Pages art. no.-W11.38
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
Address
Corporate Author Thesis
Publisher (up) Materials research society Place of Publication Warrendale Editor
Language Wos 000090103600097 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1092-5783 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:103471 Serial 423
Permanent link to this record
 
 
Author Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P.
Title Stress analysis with convergent beam electron diffraction around NMOS transistors Type P1 Proceeding
Year 2001 Publication Abbreviated Journal
Volume Issue Pages 359-360
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
Abstract
Address
Corporate Author Thesis
Publisher (up) Princeton University Press Place of Publication Princeton, N.J. Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1-58949-003-7 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95736 Serial 3176
Permanent link to this record
 
 
Author Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J.
Title Quantitative EFTEM study of germanium quantum dots Type P1 Proceeding
Year 2001 Publication Abbreviated Journal
Volume Issue Pages 345-346
Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Rinton Press Place of Publication Princeton Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1-58949-003-7 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95716 Serial 2753
Permanent link to this record
 
 
Author Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B.
Title Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study Type P1 Proceeding
Year 2000 Publication Abbreviated Journal
Volume Issue Pages 38-43
Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Defects in AgG tabular crystals with {111} surfaces are characterised by transmission electron microscopy (TEM) and their influence on the growth process is discussed. In the tabular crystals, twins parallel to the tabular face as well as dislocations along different directions are observed. The twins induce the tabular growth, while the dislocations do not influence the morphology. In 10 to 30% of the crystals that have been characterised, thickness growth is observed and it is shown that in all cases twins on other planes than the tabular ones are present. Two configurations occur more frequently and are analysed in detail. For the first group, twins parallel to the tabular face as well as a microtwin along a non-parallel {111} plane and ending inside the crystal are present. In the crystals of the second group only one extra non-parallel twin occurs giving rise to a bicrystal built up by a tetrahedral shaped part and a flat triangular or trapezoidal part. More complex twin configurations give rise to various, less characteristic morphologies.
Address
Corporate Author Thesis
Publisher (up) Soc imaging science technology Place of Publication Springfield Editor
Language Wos 000183315900012 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-89208-229-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95777 Serial 617
Permanent link to this record
 
 
Author Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C.
Title The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals Type P1 Proceeding
Year 2000 Publication Abbreviated Journal
Volume Issue Pages 167-171
Keywords P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Abstract Multishell tabular grains have a higher speed than pure AgBr tabular grains. Usually the shells differ in size and iodide content, but also the precipitation method for the iodide containing shells has an influence on the iodide incorporation. A TEM investigation was performed to determine the defect structure of multishell AgBr (111) tabular crystals containing a shell with a low iodide concentration and one with a high iodide concentration. The twins that induce tabular growth and stacking fault contrast in the region of the iodide shells have been observed, similar to previously studied AgBr/Ag(Br,I) coreshell crystals. Moreover in some of the crystals dislocations have been observed, sometimes even an entire network. The number of dislocations formed varies for the different methods of iodide addition. Also variations in average thickness between the different iodide addition methods have been observed. A higher number of dislocations and thicker crystals point towards a higher local concentration of iodide. These observations allow deciding which iodide incorporation method is most useful for a preferred dislocation pattern.
Address
Corporate Author Thesis
Publisher (up) Soc Imaging Science Technology Place of Publication Springfield Editor
Language Wos 000183315900046 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0-89208-229-1 ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95774 Serial 3587
Permanent link to this record
 
 
Author van Landuyt, J.; Van Tendeloo, G.
Title Charcaterization by high-resolution transmission electron microscopy Type H3 Book chapter
Year 1998 Publication Abbreviated Journal
Volume Issue Pages 187-190
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Stt Place of Publication Den Haag Editor
Language Wos A1990DC39700012 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record;
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:29685 Serial 335
Permanent link to this record
 
 
Author Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al.
Title Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization Type A1 Journal article
Year 2000 Publication Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA Abbreviated Journal Mater Sci Forum
Volume 338-3 Issue Pages 309-312
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
Address
Corporate Author Thesis
Publisher (up) Trans tech publications ltd Place of Publication Zurich-uetikon Editor
Language Wos 000165996700075 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0255-5476 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 2 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:104262 Serial 1071
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Author Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G.
Title Electron microscopy: principles and fundamentals Type ME1 Book as editor or co-editor
Year 1997 Publication Abbreviated Journal
Volume Issue Pages
Keywords ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher (up) Vch Place of Publication Weinheim Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 3-527-29479-1 Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:22089 Serial 967
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Author Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G.
Title Handbook of microscopy: applications in materials science, solid-state physics and chemistry Type ME1 Book as editor or co-editor
Year 1997 Publication Abbreviated Journal
Volume Issue Pages
Keywords ME1 Book as editor or co-editor; Electron microscopy for materials research (EMAT); Vision lab
Abstract
Address
Corporate Author Thesis
Publisher (up) Vch Place of Publication Weinheim Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 3-527-29280-2 Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21417 Serial 1407
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Author van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J.
Title Microscopy of gemmological materials Type H3 Book chapter
Year 1997 Publication Abbreviated Journal
Volume Issue Pages 293-320
Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) Vch Place of Publication Weinheim Editor
Language Wos A1995BC72X00044 Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 4 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:21419 Serial 2037
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Author Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J.
Title Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM Type A1 Journal article
Year 1999 Publication Physica status solidi: A: applied research T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland Abbreviated Journal Phys Status Solidi A
Volume 171 Issue 1 Pages 147-157
Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
Abstract In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Address
Corporate Author Thesis
Publisher (up) Wiley Place of Publication Berlin Editor
Language Wos 000078539700020 Publication Date 2002-09-10
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-8965;1521-396X; ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor Times cited 40 Open Access
Notes Approved Most recent IF: NA
Call Number UA @ lucian @ c:irua:95798 Serial 1152
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Author Amelinckx, S.; Bernaerts, D.; Van Tendeloo, G.; van Landuyt, J.; Lucas, A.A.; Mathot, M.; Lambin, P.
Title The morphology, structure and texture of carbon nanotubes: an electron microscopy study Type P3 Proceeding
Year 1995 Publication Abbreviated Journal
Volume Issue Pages 515-541
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) World Scientific Place of Publication Singapore Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved no
Call Number UA @ lucian @ c:irua:13294 Serial 2207
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Author Bernaerts, D.; Amelinckx, S.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J.
Title Structural aspects of carbon nanotubes Type P3 Proceeding
Year 1995 Publication Abbreviated Journal
Volume Issue Pages 551-555
Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)
Abstract
Address
Corporate Author Thesis
Publisher (up) World Scientific Place of Publication Singapore Editor
Language Wos Publication Date 0000-00-00
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links UA library record
Impact Factor Times cited Open Access
Notes Approved
Call Number UA @ lucian @ c:irua:13295 Serial 3206
Permanent link to this record