Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
de Witte, H.; Conard, T.; Sporken, R.; Gouttebaron, R.; Magnee, R.; Vandervorst, W.; Caudano, R.; Gijbels, R. |
XPS study of ion induced oxidation of silicon with and without oxygen flooding |
2000 |
|
|
|
UA library record |
Goux, L.; Fantini, A.; Govoreanu, B.; Kar, G.; Clima, S.; Chen, Y.-Y.; Degraeve, R.; Wouters, D.J.; Pourtois, G.; Jurczak, M. |
Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems |
2012 |
ECS solid state letters |
1 |
11 |
UA library record; WoS full record; WoS citing articles |
Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; |
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates |
2013 |
ECS solid state letters |
2 |
12 |
UA library record; WoS full record; WoS citing articles |
Sankaran, K.; Clima, S.; Mees, M.; Pourtois, G. |
Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations |
2015 |
ECS journal of solid state science and technology |
4 |
19 |
UA library record; WoS full record; WoS citing articles |
Neyts, E.C.; Bogaerts, A. |
Modeling the growth of SWNTs and graphene on the atomic scale |
2012 |
ECS transactions |
45 |
2 |
UA library record; WoS full record; WoS citing articles |
Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures |
2018 |
ECS journal of solid state science and technology |
7 |
5 |
UA library record; WoS full record; WoS citing articles |
Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. |
Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2018 |
ECS journal of solid state science and technology |
7 |
2 |
UA library record; WoS full record; WoS citing articles |
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. |
On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications |
2018 |
ECS journal of solid state science and technology |
7 |
4 |
UA library record; WoS full record; WoS citing articles |
Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Theoretical study of silicene and germanene |
2013 |
Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 |
|
6 |
UA library record; WoS full record; WoS citing articles |
Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures |
2017 |
Semiconductor Process Integration 10 |
|
|
UA library record; WoS full record |
Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. |
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2017 |
Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar |
|
1 |
UA library record; WoS full record; WoS citing articles |
Oleshko, V.; Gijbels, R.; Jacob, W.; Alfimov, M. |
Complex structural and analytical characterization of silver halide photographic systems by means of analytical electron microscopy |
1994 |
|
|
|
UA library record; WoS full record; |
de Bleecker, K.; Bogaerts, A.; Goedheer, W.J.; Gijbels, R. |
Modelling of formation and transport of nanoparticles in silane discharges |
2004 |
|
|
|
UA library record |
Gijbels, R.; van Grieken, R.; Blommaert, W.; Vandelannoote, R.; Van 't dack, L. |
Application of trace element analysis to geothermal waters |
1977 |
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|
|
UA library record |
Neyts, E.; Mao, M.; Eckert, M.; Bogaerts, A. |
Modeling aspects of plasma-enhanced chemical vapor deposition of carbon-based materials |
2012 |
|
|
|
UA library record |
Vandelannoote, R.; Blommaert, W.; Van 't dack, L.; van Grieken, R.; Gijbels, R. |
Multi-element trace analysis of geothermal waters : problems, characteristics and applicability |
1985 |
|
|
|
UA library record |
Jakubowski, N.; Bogaerts, A.; Hoffmann, V. |
Glow discharges in emission and mass spectrometry |
2003 |
|
|
|
UA library record |
Sun, S. |
Study of carbon dioxide dissociation mechanisms in a gliding arc discharge |
2018 |
|
|
|
UA library record; |
Pentcheva, E.N.; Veldeman, E.; Van 't dack, L.; Gijbels, R. |
Trace element geochemistry of the system rock-thermal water – suspended matter – deposits in a granitic environment |
1992 |
|
|
1 |
UA library record; WoS full record; WoS citing articles |
Derzsi, A.; Donko, Z.; Bogaerts, A.; Hoffmann, V. |
The influence of the secondary electron emission coefficient and effect of the gas heating on the calculated electrical characteristics of a grimm type glow discharge cell |
2008 |
|
|
|
UA library record; WoS full record; WoS citing articles |
Petrovic, D.; Martens, T.; van Dijk, J.; Brok, W.J.M.; Bogaerts, A. |
Modeling of a dielectric barrier discharge used as a flowing chemical reactor |
2008 |
|
|
|
UA library record; WoS full record; |
Lu, A.K.A.; Houssa, M.; Luisier, M.; Pourtois, G. |
Impact of layer alignment on the behavior of MoS2-ZrS2 tunnel field-effect transistors : an ab initio study |
2017 |
Physical review applied |
8 |
6 |
UA library record; WoS full record; WoS citing articles |
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors |
2018 |
Physical review B |
97 |
2 |
UA library record; WoS full record; WoS citing articles |
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Defects in amorphous semiconductors : the case of amorphous indium gallium zinc oxide |
2018 |
Physical review applied |
9 |
7 |
UA library record; WoS full record; WoS citing articles |
Herrebout, D.; Bogaerts, A.; Yan, M.; Goedheer, W.; Dekempeneer, E.; Gijbels, R. |
1D fluid model for an rf methane plasma of interest in deposition of diamond-like carbon layers |
2001 |
Journal of applied physics |
90 |
83 |
UA library record; WoS full record; WoS citing articles |
de Bleecker, K.; Bogaerts, A.; Goedheer, W. |
Aromatic ring generation as a dust precursor in acetylene discharges |
2006 |
Applied physics letters |
88 |
20 |
UA library record; WoS full record; WoS citing articles |
Zhao, S.-X.; Zhang, Y.-R.; Gao, F.; Wang, Y.-N.; Bogaerts, A. |
Bulk plasma fragmentation in a C4F8 inductively coupled plasma : a hybrid modelling study |
2015 |
Journal of applied physics |
117 |
11 |
UA library record; WoS full record; WoS citing articles |
Kolev, I.; Bogaerts, A. |
Calculation of gas heating in a dc sputter magnetron |
2008 |
Journal of applied physics |
104 |
19 |
UA library record; WoS full record; WoS citing articles |
Bogaerts, A.; Gijbels, R.; Serikov, V.V. |
Calculation of gas heating in direct current argon glow discharges |
2000 |
Journal of applied physics |
87 |
63 |
UA library record; WoS full record; WoS citing articles |
Bogaerts, A.; Gijbels, R.; Vlcek, J. |
Collisional-radiative model for an argon glow discharge |
1998 |
Journal of applied physics |
84 |
138 |
UA library record; WoS full record; WoS citing articles |