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Author Title Year Publication Volume Times cited Additional Links
Wendelen, W.; Mueller, B.Y.; Autrique, D.; Rethfeld, B.; Bogaerts, A. Space charge corrected electron emission from an aluminum surface under non-equilibrium conditions 2012 Journal of applied physics 111 30 UA library record; WoS full record; WoS citing articles
Wendelen, W.; Autrique, D.; Bogaerts, A. Space charge limited electron emission from a Cu surface under ultrashort pulsed laser irradiation 2010 Applied physics letters 96 22 UA library record; WoS full record; WoS citing articles
Yan, M.; Bogaerts, A.; Gijbels, R.; Goedheer, W.J. Spatial behavior of energy relaxation of electrons in capacitively coupled discharges: comparison between Ar and SiH4 2000 Journal of applied physics 87 14 UA library record; WoS full record; WoS citing articles
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Structural and vibrational properties of amorphous GeO2 from first-principles 2011 Applied physics letters 98 226 UA library record; WoS full record; WoS citing articles
Baguer, N.; Bogaerts, A.; Gijbels, R. Study of a hollow cathode glow discharge in He: Monte Carlo-fluid model combined with a transport model for the metastable atoms 2003 Journal of applied physics 93 24 UA library record; WoS full record; WoS citing articles
Baguer, N.; Bogaerts, A.; Donko, Z.; Gijbels, R.; Sadeghi, N. Study of the Ar metastable atom population in a hollow cathode discharge by means of a hybrid model and spectrometric measurements 2005 Journal of applied physics 97 40 UA library record; WoS full record; WoS citing articles
Baguer, N.; Bogaerts, A. Study of the sputtered Cu atoms and Cu+ ions in a hollow cathode glow discharge using a hybrid model 2005 Journal of applied physics 98 18 UA library record; WoS full record; WoS citing articles
Neyts, E.; Bogaerts, A.; van de Sanden, M.C.M. Unraveling the deposition mechanism in a-C:H thin-film growth: a molecular-dynamics study for the reaction behavior of C3 and C3H radicals with a-C:H surfaces 2006 Journal of applied physics 99 25 UA library record; WoS full record; WoS citing articles
Clima, S.; Chen, Y.Y.; Chen, C.Y.; Goux, L.; Govoreanu, B.; Degraeve, R.; Fantini, A.; Jurczak, M.; Pourtois, G. First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device 2016 Journal of applied physics 119 17 UA library record; WoS full record; WoS citing articles
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films 2016 Applied physics letters 108 9 UA library record; WoS full record; WoS citing articles
Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study 2016 Applied physics letters 108 4 UA library record; WoS full record; WoS citing articles
Dutta, S.; Sankaran, K.; Moors, K.; Pourtois, G.; Van Elshocht, S.; Bommels, J.; Vandervorst, W.; Tokei, Z.; Adelmann, C. Thickness dependence of the resistivity of platinum-group metal thin films 2017 Journal of applied physics 122 42 UA library record; WoS full record; WoS citing articles
Lu, A.K.A.; Houssa, M.; Luisier, M.; Pourtois, G. Impact of layer alignment on the behavior of MoS2-ZrS2 tunnel field-effect transistors : an ab initio study 2017 Physical review applied 8 6 UA library record; WoS full record; WoS citing articles
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors 2018 Physical review B 97 2 UA library record; WoS full record; WoS citing articles
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. Defects in amorphous semiconductors : the case of amorphous indium gallium zinc oxide 2018 Physical review applied 9 7 UA library record; WoS full record; WoS citing articles
Derzsi, A.; Donko, Z.; Bogaerts, A.; Hoffmann, V. The influence of the secondary electron emission coefficient and effect of the gas heating on the calculated electrical characteristics of a grimm type glow discharge cell 2008 UA library record; WoS full record; WoS citing articles
Petrovic, D.; Martens, T.; van Dijk, J.; Brok, W.J.M.; Bogaerts, A. Modeling of a dielectric barrier discharge used as a flowing chemical reactor 2008 UA library record; WoS full record;
Pentcheva, E.N.; Veldeman, E.; Van 't dack, L.; Gijbels, R. Trace element geochemistry of the system rock-thermal water – suspended matter – deposits in a granitic environment 1992 1 UA library record; WoS full record; WoS citing articles
Sun, S. Study of carbon dioxide dissociation mechanisms in a gliding arc discharge 2018 UA library record;
Jakubowski, N.; Bogaerts, A.; Hoffmann, V. Glow discharges in emission and mass spectrometry 2003 UA library record
Vandelannoote, R.; Blommaert, W.; Van 't dack, L.; van Grieken, R.; Gijbels, R. Multi-element trace analysis of geothermal waters : problems, characteristics and applicability 1985 UA library record
Neyts, E.; Mao, M.; Eckert, M.; Bogaerts, A. Modeling aspects of plasma-enhanced chemical vapor deposition of carbon-based materials 2012 UA library record
Gijbels, R.; van Grieken, R.; Blommaert, W.; Vandelannoote, R.; Van 't dack, L. Application of trace element analysis to geothermal waters 1977 UA library record
de Bleecker, K.; Bogaerts, A.; Goedheer, W.J.; Gijbels, R. Modelling of formation and transport of nanoparticles in silane discharges 2004 UA library record
Oleshko, V.; Gijbels, R.; Jacob, W.; Alfimov, M. Complex structural and analytical characterization of silver halide photographic systems by means of analytical electron microscopy 1994 UA library record; WoS full record;
Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Theoretical study of silicene and germanene 2013 Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 6 UA library record; WoS full record; WoS citing articles
Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures 2017 Semiconductor Process Integration 10 UA library record; WoS full record
Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations 2017 Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar 1 UA library record; WoS full record; WoS citing articles
Goux, L.; Fantini, A.; Govoreanu, B.; Kar, G.; Clima, S.; Chen, Y.-Y.; Degraeve, R.; Wouters, D.J.; Pourtois, G.; Jurczak, M. Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems 2012 ECS solid state letters 1 11 UA library record; WoS full record; WoS citing articles
Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates 2013 ECS solid state letters 2 12 UA library record; WoS full record; WoS citing articles