Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Depla, D.; Li, X.Y.; Mahieu, S.; van Aeken, K.; Leroy, W.P.; Haemers, J.; de Gryse, R.; Bogaerts, A. |
Rotating cylindrical magnetron sputtering: simulation of the reactive process |
2010 |
Journal of applied physics |
107 |
15 |
UA library record; WoS full record; WoS citing articles |
Wendelen, W.; Mueller, B.Y.; Autrique, D.; Rethfeld, B.; Bogaerts, A. |
Space charge corrected electron emission from an aluminum surface under non-equilibrium conditions |
2012 |
Journal of applied physics |
111 |
30 |
UA library record; WoS full record; WoS citing articles |
Wendelen, W.; Autrique, D.; Bogaerts, A. |
Space charge limited electron emission from a Cu surface under ultrashort pulsed laser irradiation |
2010 |
Applied physics letters |
96 |
22 |
UA library record; WoS full record; WoS citing articles |
Yan, M.; Bogaerts, A.; Gijbels, R.; Goedheer, W.J. |
Spatial behavior of energy relaxation of electrons in capacitively coupled discharges: comparison between Ar and SiH4 |
2000 |
Journal of applied physics |
87 |
14 |
UA library record; WoS full record; WoS citing articles |
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Structural and vibrational properties of amorphous GeO2 from first-principles |
2011 |
Applied physics letters |
98 |
226 |
UA library record; WoS full record; WoS citing articles |
Baguer, N.; Bogaerts, A.; Gijbels, R. |
Study of a hollow cathode glow discharge in He: Monte Carlo-fluid model combined with a transport model for the metastable atoms |
2003 |
Journal of applied physics |
93 |
24 |
UA library record; WoS full record; WoS citing articles |
Baguer, N.; Bogaerts, A.; Donko, Z.; Gijbels, R.; Sadeghi, N. |
Study of the Ar metastable atom population in a hollow cathode discharge by means of a hybrid model and spectrometric measurements |
2005 |
Journal of applied physics |
97 |
40 |
UA library record; WoS full record; WoS citing articles |
Baguer, N.; Bogaerts, A. |
Study of the sputtered Cu atoms and Cu+ ions in a hollow cathode glow discharge using a hybrid model |
2005 |
Journal of applied physics |
98 |
18 |
UA library record; WoS full record; WoS citing articles |
Neyts, E.; Bogaerts, A.; van de Sanden, M.C.M. |
Unraveling the deposition mechanism in a-C:H thin-film growth: a molecular-dynamics study for the reaction behavior of C3 and C3H radicals with a-C:H surfaces |
2006 |
Journal of applied physics |
99 |
25 |
UA library record; WoS full record; WoS citing articles |
Clima, S.; Chen, Y.Y.; Chen, C.Y.; Goux, L.; Govoreanu, B.; Degraeve, R.; Fantini, A.; Jurczak, M.; Pourtois, G. |
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device |
2016 |
Journal of applied physics |
119 |
17 |
UA library record; WoS full record; WoS citing articles |
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; |
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films |
2016 |
Applied physics letters |
108 |
9 |
UA library record; WoS full record; WoS citing articles |
Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. |
Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study |
2016 |
Applied physics letters |
108 |
4 |
UA library record; WoS full record; WoS citing articles |
Dutta, S.; Sankaran, K.; Moors, K.; Pourtois, G.; Van Elshocht, S.; Bommels, J.; Vandervorst, W.; Tokei, Z.; Adelmann, C. |
Thickness dependence of the resistivity of platinum-group metal thin films |
2017 |
Journal of applied physics |
122 |
42 |
UA library record; WoS full record; WoS citing articles |
Lu, A.K.A.; Houssa, M.; Luisier, M.; Pourtois, G. |
Impact of layer alignment on the behavior of MoS2-ZrS2 tunnel field-effect transistors : an ab initio study |
2017 |
Physical review applied |
8 |
6 |
UA library record; WoS full record; WoS citing articles |
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors |
2018 |
Physical review B |
97 |
2 |
UA library record; WoS full record; WoS citing articles |
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Defects in amorphous semiconductors : the case of amorphous indium gallium zinc oxide |
2018 |
Physical review applied |
9 |
7 |
UA library record; WoS full record; WoS citing articles |
Derzsi, A.; Donko, Z.; Bogaerts, A.; Hoffmann, V. |
The influence of the secondary electron emission coefficient and effect of the gas heating on the calculated electrical characteristics of a grimm type glow discharge cell |
2008 |
|
|
|
UA library record; WoS full record; WoS citing articles |
Petrovic, D.; Martens, T.; van Dijk, J.; Brok, W.J.M.; Bogaerts, A. |
Modeling of a dielectric barrier discharge used as a flowing chemical reactor |
2008 |
|
|
|
UA library record; WoS full record; |
Pentcheva, E.N.; Veldeman, E.; Van 't dack, L.; Gijbels, R. |
Trace element geochemistry of the system rock-thermal water – suspended matter – deposits in a granitic environment |
1992 |
|
|
1 |
UA library record; WoS full record; WoS citing articles |
Sun, S. |
Study of carbon dioxide dissociation mechanisms in a gliding arc discharge |
2018 |
|
|
|
UA library record; |
Jakubowski, N.; Bogaerts, A.; Hoffmann, V. |
Glow discharges in emission and mass spectrometry |
2003 |
|
|
|
UA library record |
Vandelannoote, R.; Blommaert, W.; Van 't dack, L.; van Grieken, R.; Gijbels, R. |
Multi-element trace analysis of geothermal waters : problems, characteristics and applicability |
1985 |
|
|
|
UA library record |
Neyts, E.; Mao, M.; Eckert, M.; Bogaerts, A. |
Modeling aspects of plasma-enhanced chemical vapor deposition of carbon-based materials |
2012 |
|
|
|
UA library record |
Gijbels, R.; van Grieken, R.; Blommaert, W.; Vandelannoote, R.; Van 't dack, L. |
Application of trace element analysis to geothermal waters |
1977 |
|
|
|
UA library record |
de Bleecker, K.; Bogaerts, A.; Goedheer, W.J.; Gijbels, R. |
Modelling of formation and transport of nanoparticles in silane discharges |
2004 |
|
|
|
UA library record |
Oleshko, V.; Gijbels, R.; Jacob, W.; Alfimov, M. |
Complex structural and analytical characterization of silver halide photographic systems by means of analytical electron microscopy |
1994 |
|
|
|
UA library record; WoS full record; |
Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Theoretical study of silicene and germanene |
2013 |
Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 |
|
6 |
UA library record; WoS full record; WoS citing articles |
Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures |
2017 |
Semiconductor Process Integration 10 |
|
|
UA library record; WoS full record |
Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. |
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2017 |
Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar |
|
1 |
UA library record; WoS full record; WoS citing articles |
Goux, L.; Fantini, A.; Govoreanu, B.; Kar, G.; Clima, S.; Chen, Y.-Y.; Degraeve, R.; Wouters, D.J.; Pourtois, G.; Jurczak, M. |
Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems |
2012 |
ECS solid state letters |
1 |
11 |
UA library record; WoS full record; WoS citing articles |