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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Amelinckx, S.; Bernaerts, D.; Van Tendeloo, G.; van Landuyt, J.; Lucas, A.A.; Mathot, M.; Lambin, P. |
The morphology, structure and texture of carbon nanotubes: an electron microscopy study |
1995 |
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UA library record |
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Bernaerts, D.; Amelinckx, S.; Zhang, X.B.; Van Tendeloo, G.; van Landuyt, J. |
Structural aspects of carbon nanotubes |
1995 |
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UA library record |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM |
1999 |
Physica status solidi: A: applied research
T2 – International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland |
171 |
40 |
UA library record; WoS full record; WoS citing articles |
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Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. |
Electron microscopy: principles and fundamentals |
1997 |
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UA library record |
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Amelinckx, S.; van Dyck, D.; van Landuyt, J.; Van Tendeloo, G. |
Handbook of microscopy: applications in materials science, solid-state physics and chemistry |
1997 |
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UA library record |
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van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J. |
Microscopy of gemmological materials |
1997 |
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4 |
UA library record; WoS full record; WoS citing articles |
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Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. |
Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization |
2000 |
Materials science forum
T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA |
338-3 |
2 |
UA library record; WoS full record; WoS citing articles |
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van Landuyt, J.; Van Tendeloo, G. |
Charcaterization by high-resolution transmission electron microscopy |
1998 |
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UA library record; WoS full record; |
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Van Renterghem, W.; Schryvers, D.; van Landuyt, J.; Bollen, D.; Van Roost, C.; De Keyzer, R.B. |
Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study |
2000 |
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UA library record; WoS full record; |
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Van Renterghem, W.; Karthauser, S.; Schryvers, D.; van Landuyt, J.; De Keyzer, R.; Van Roost, C. |
The influence of the precipitation method on defect formation in multishell AgBrI (111) tabular crystals |
2000 |
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UA library record; WoS full record; |
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Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. |
Quantitative EFTEM study of germanium quantum dots |
2001 |
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UA library record; WoS full record; |
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Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. |
Stress analysis with convergent beam electron diffraction around NMOS transistors |
2001 |
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UA library record; WoS full record; |
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Vantomme, A.; Wu, M.F.; Hogg, S.; van Landuyt, J.; et al. |
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content |
2000 |
Internet journal of nitride semiconductor research
T2 – Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
5 |
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UA library record; WoS full record; |
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Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation |
1997 |
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UA library record |
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Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
HREM investigation of a Fe/GaN/Fe tunnel junction |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
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UA library record; WoS full record; |
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Vanhellemont, J.; Romano Rodriguez, A.; Fedina, L.; van Landuyt, J.; Aseev, A. |
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope |
1995 |
Materials science and technology |
11 |
7 |
UA library record; WoS full record; WoS citing articles |
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Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. |
Reliability of copper dual damascene influenced by pre-clean |
2002 |
Analysis Of Integrated Circuits |
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5 |
UA library record; WoS full record; WoS citing articles |
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van Landuyt, J. |
High resolution electron microscopy for materials |
1992 |
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7 |
UA library record; WoS full record; WoS citing articles |
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Goessens, C.; Schryvers, D.; de Keyzer, R.; van Landuyt, J. |
In situ HREM study of electron irradiation effects in AgCl microcrystals |
1992 |
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UA library record |
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de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. |
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM |
2001 |
Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY |
308 |
3 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; Nejim, A.; Hemment, P.L.F.; Stoemenos, J.; van Landuyt, J. |
Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing – Fr |
112 |
9 |
UA library record; WoS full record; WoS citing articles |
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Vanhellemont, J.; Maes, H.E.; Schaekers, M.; Armigliato, A.; Cerva, H.; Cullis, A.; de Sande, J.; Dinges, H.; Hallais, J.; Nayar, V.; Pickering, C.; Stehlé, J.L.; Van Landuyt, J.; Walker, C.; Werner, H.; Salieri, P.; |
Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry |
1993 |
Applied surface science
T2 – SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE |
63 |
13 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. |
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ |
1996 |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France |
120 |
2 |
UA library record; WoS full record; WoS citing articles |
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van Landuyt, J.; Vanhellemont, J. |
High-resolution electron microscopy for semiconducting materials science |
1994 |
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UA library record |
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van Landuyt, J. |
The evolution of HVEM application in antwerp |
1991 |
Ultramicroscopy
T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan |
39 |
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UA library record; WoS full record |
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Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. |
Electron microscopy of fullerenes and fullerene related structures |
1994 |
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UA library record |
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Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Le Tanner |
HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited) |
1994 |
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UA library record; WoS full record; |
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Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
2000 |
Applied physics letters |
77 |
44 |
UA library record; WoS full record; WoS citing articles |
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Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. |
High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing |
1998 |
Applied physics letters |
72 |
16 |
UA library record; WoS full record; WoS citing articles |
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Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. |
Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays |
1999 |
Applied physics letters |
75 |
481 |
UA library record; WoS full record; WoS citing articles |
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