| Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
| Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. |
A 2a2b3c superstructure in hexagonal NiS1-x: a study by means of electron diffraction and HREM |
1993 |
Journal of crystal growth |
126 |
4 |
UA library record; WoS full record; WoS citing articles |
| Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. |
A 2a2a3c superstructure in hexagonal Ni1-xS : a study by means of electron-diffraction and HRTEM |
1993 |
Journal of crystal growth |
126 |
4 |
UA library record; WoS full record; WoS citing articles |
| Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. |
A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions |
2003 |
The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical |
107 |
9 |
UA library record; WoS full record; WoS citing articles |
| de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon |
2003 |
Physica: B : condensed matter
T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK |
340 |
4 |
UA library record; WoS full record; WoS citing articles |
| De Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers |
1999 |
Microelectronic engineering |
45 |
|
UA library record; WoS full record |
| de Gryse, O.; Clauws, P.; Rossou, L.; van Landuyt, J.; Vanhellemont, J. |
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon |
1999 |
The review of scientific instruments |
70 |
5 |
UA library record; WoS full record; WoS citing articles |
| Zhang, X.F.; Zhang, X.B.; Van Tendeloo, G.; Amelinckx, S.; op de Beeck, M.; van Landuyt, J. |
Carbon nano-tubes: their formation process and observation by electron microscopy |
1993 |
Journal of crystal growth |
130 |
190 |
UA library record; WoS full record; WoS citing articles |
| Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
2001 |
Institute of physics conference series |
|
|
UA library record; WoS full record; |
| Yasuda, K.; Hisatsune, K.; Udoh, K.; Tanaka, Y.; Van Tendeloo, G.; van Landuyt, J. |
Characteristic mosaic texture related to orderingin AuCu-9at.%Ag pseudobinary alloy |
1992 |
Dentistry in Japan |
29 |
|
UA library record |
| Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Geuens, I.; Gijbels, R.; Jacob, W.; Verbeeck, A.; de Keyzer, R. |
Characterization of crystal defects and analysis of iodide distribution in mixed tabular silver halide grains by conventional transmission electron microscopy, X-ray diffractometry and back-scattered electron imaging |
1991 |
|
|
|
UA library record |
| Goessens, C.; Schryvers, D.; van Landuyt, J.; Amelinckx, S.; Verbeeck, A.; de Keyzer, R. |
Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry |
1991 |
Journal of crystal growth |
110 |
40 |
UA library record; WoS full record; WoS citing articles |
| Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas |
1997 |
Journal of crystal growth |
173 |
4 |
UA library record; WoS full record; WoS citing articles |
| de Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.I.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy |
2004 |
Journal of the electrochemical society |
151 |
13 |
UA library record; WoS full record; WoS citing articles |
| Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
2001 |
Materials science in semiconductor processing |
4 |
|
UA library record; WoS full record |
| De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. |
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy |
2002 |
|
|
|
UA library record; WoS full record; |
| Bernaerts, D.; op de Beeck, M.; Amelinckx, S.; van Landuyt, J.; Van Tendeloo, G. |
The chirality of carbon nanotubules determined by dark-field electron microscopy |
1996 |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
74 |
20 |
UA library record; WoS full record; WoS citing articles |
| Fedina, L.; Gutakovskii, A.; Aseev, A.; van Landuyt, J.; Vanhellemont, J. |
Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation |
1999 |
Institute of physics conference series
T2 – Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND |
|
|
UA library record; WoS full record; |
| Nistor, L.C.; van Landuyt, J.; Barton, J.D.; Hole, D.E.; Skelland, N.D.; Townsend, P.D. |
Colloid size distributions in ion implanted glass |
1993 |
Journal of non-crystalline solids |
162 |
63 |
UA library record; WoS full record; WoS citing articles |
| Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals |
1996 |
The journal of imaging science and technology |
40 |
4 |
UA library record; WoS full record; WoS citing articles |
| Chen, J.H.; van Dyck, D.; op de Beeck, M.; van Landuyt, J. |
Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging |
1997 |
Ultramicroscopy |
69 |
11 |
UA library record; WoS full record; WoS citing articles |
| Amelinckx, S.; Luyten, W.; Krekels, T.; Van Tendeloo, G.; van Landuyt, J. |
Conical, helically woud, graphite whiskers: a limliting member of the “fullerenes”? |
1992 |
Journal of crystal growth |
121 |
43 |
UA library record; WoS full record; WoS citing articles |
| Schryvers, D.; Goessens, C.; van Renterghem, W.; van Landuyt, J.; de Keyzer, R. |
Conventional and HREM study of structural defects in nanostructured silver halides |
1998 |
|
|
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UA library record |
| Mihailescu, I.N.; Gyorgy, E.; Marin, G.; Popescu, M.; Teodorescu, V.S.; van Landuyt, J.; Grivas, C.; Hatziapostolou, A. |
Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition |
1999 |
Journal of vacuum science and technology: A: vacuum surfaces and films |
17 |
8 |
UA library record; WoS full record; WoS citing articles |
| van Landuyt, J.; Van Tendeloo, G.; Amelinckx, S.; Zhang, X.F.; Zhang, X.B.; Luyten, W. |
Crystallography of fullerites and related graphene textures |
1994 |
Materials science forum |
150/151 |
|
UA library record; WoS full record; |
| Suvorov, A.V.; Lebedev, O.I.; Suvorova, A.A.; van Landuyt, J.; Usov, I.O. |
Defect characterization in high temperature implanted 6H-SiC using TEM |
1997 |
Nuclear instruments and methods in physics research: B |
127/128 |
17 |
UA library record; WoS full record; WoS citing articles |
| van Renterghem, W.; Schryvers, D.; van Landuyt, J.; van Roost, C. |
Defect related growth of tabular AgCl(100) crystals: a TEM study |
1998 |
|
|
|
UA library record; WoS full record; |
| van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. |
Defects and growth mechanisms of AgCl(100) tabular crystals |
1998 |
Journal of crystal growth |
187 |
8 |
UA library record; WoS full record; WoS citing articles |
| van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R. |
Defects in AgCl and AgBr(100) tabular crystals studied by TEM |
1998 |
|
|
|
UA library record |
| Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. |
Defects in high-dose oxygen implanted silicon : a TEM study |
1991 |
Vacuum: the international journal and abstracting service for vacuum science and technology
T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND |
42 |
4 |
UA library record; WoS full record; WoS citing articles |
| De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J. |
Direct observation of clusters in some FCC alloys by HREM |
1994 |
Icem |
13 |
|
UA library record; WoS full record; |
