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Author Title Year Publication Volume Times cited Additional Links
Sels, D.; Sorée, B.; Groeseneken, G. 2-D rotational invariant multi sub band Schrödinger-Poisson solver to model nanowire transistors 2010 UA library record
Sorée, B.; Pham, A.-T.; Sels, D.; Magnus, W. The junctionless nanowire transistor 2011 UA library record
Magnus, W.; Carrillo-Nunez, H.; Sorée, B. Transport in nanostructures 2011 UA library record
Zografos, O.; Manfrini, M.; Vaysset, A.; Sorée, B.; Ciubotaru, F.; Adelmann, C.; Lauwereins, R.; Raghavan, P.; Radu, I.P. Exchange-driven magnetic logic 2017 Scientific reports 7 7 UA library record; WoS full record; WoS citing articles
Dutta, S.; Zografos, O.; Gurunarayanan, S.; Radu, I.; Sorée, B.; Catthoor, F.; Naeemi, A. Proposal for nanoscale cascaded plasmonic majority gates for non-Boolean computation 2017 Scientific reports 7 2 UA library record; WoS full record; WoS citing articles
Andrikopoulos, D.; Sorée, B. Skyrmion electrical detection with the use of three-dimensional Topological Insulators/Ferromagnetic bilayers 2017 Scientific reports 7 3 UA library record; WoS full record; WoS citing articles
Bizindavyi, J.; Verhulst, A.S.; Smets, Q.; Verreck, D.; Sorée, B.; Groeseneken, G. Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes 2018 IEEE journal of the Electron Devices Society 6 5 UA library record; WoS full record; WoS citing articles
Van de Put, M.; Thewissen, M.; Magnus, W.; Sorée, B.; Sellier, J.M. Spectral force approach to solve the time-dependent Wigner-Liouville equation 2014 2014 International Workshop On Computational Electronics (iwce) UA library record; WoS full record;
Verreck, D.; Van de Put, M.L.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Dabral, A.; Thean, A.; Groeseneken, G. 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record
Moors, K.; Sorée, B.; Magnus, W. Analytic solution of Ando's surface roughness model with finite domain distribution functions 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record
Moors, K.; Sorée, B.; Magnus, W. Modeling and tackling resistivity scaling in metal nanowires 2015 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC UA library record; WoS full record
Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B.; Fischetti, M.V. Modeling of inter-ribbon tunneling in graphene 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors 2016 Solid-State Device Research (ESSDERC), European Conference T2 – 46th European Solid-State Device Research Conference (ESSDERC) / 42nd, European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND UA library record; WoS full record
Verhulst, A.S.; Verreck, D.; Smets, Q.; Kao, K.-H.; Van de Put, M.; Rooyackers, R.; Sorée, B.; Vandooren, A.; De Meyer, K.; Groeseneken, G.; Heyns, M.M.; Mocuta, A.; Collaert, N.; Thean, A.V.-Y. Perspective of tunnel-FET for future low-power technology nodes 2014 2014 Ieee International Electron Devices Meeting (iedm) UA library record; WoS full record
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors 2017 Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017) UA library record; WoS full record
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs 2018 Conference digest T2 – 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA UA library record; WoS full record
De Clercq, M.; Moors, K.; Sankaran, K.; Pourtois, G.; Dutta, S.; Adelmann, C.; Magnus, W.; Sorée, B. Resistivity scaling model for metals with conduction band anisotropy 2018 Physical review materials 2 UA library record; WoS full record; WoS citing articles
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology 2009 Journal of applied physics 106 3 UA library record; WoS full record; WoS citing articles
Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. Figure of merit for and identification of sub-60 mV/decade devices 2013 Applied physics letters 102 64 UA library record; WoS full record; WoS citing articles
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach 2011 Journal of applied physics 109 41 UA library record; WoS full record; WoS citing articles
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. Impact of field-induced quantum confinement in tunneling field-effect devices 2011 Applied physics letters 98 76 UA library record; WoS full record; WoS citing articles
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic 2014 Applied physics letters 105 10 UA library record; WoS full record; WoS citing articles
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models 2014 Journal of applied physics 115 34 UA library record; WoS full record; WoS citing articles
Sorée, B.; Magnus, W.; Vandenberghe, W. Low-field mobility in ultrathin silicon nanowire junctionless transistors 2011 Applied physics letters 99 20 UA library record; WoS full record; WoS citing articles
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. A method to calculate tunneling leakage currents in silicon inversion layers 2006 Journal of applied physics 100 1 UA library record; WoS full record; WoS citing articles
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors 2012 Applied physics letters 100 25 UA library record; WoS full record; WoS citing articles
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections 2010 Applied Physics Letters 96 26 UA library record; WoS full record; WoS citing articles
Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor 2010 Journal Of Applied Physics 107 150 UA library record; WoS full record; WoS citing articles
Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. Phonon-assisted Zener tunneling in a cylindrical nanowire transistor 2013 Journal of applied physics 113 4 UA library record; WoS full record; WoS citing articles
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers 2009 Journal of applied physics 106 29 UA library record; WoS full record; WoS citing articles