Nano Home

NANOlab Center of Excellence literature database

Home |  Show All |  Simple Search |  Advanced Search
Quick Search:
31–49 of 49 records found matching your query (RSS):
toggle visibility
Search within Results:
Display Options:
Select All    Deselect All << 1 2 >>
List View
 | 
Citations
 | 
Details
   print
  Records Links
Author Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. doi  openurl
  Title In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates Type A1 Journal article
  Year 2001 Publication (down) Journal of materials research Abbreviated Journal J Mater Res  
  Volume 16 Issue 3 Pages 701-708  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000167407200011 Publication Date 2008-03-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0884-2914;2044-5326; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.673 Times cited 4 Open Access  
  Notes Approved Most recent IF: 1.673; 2001 IF: 1.539  
  Call Number UA @ lucian @ c:irua:103926 Serial 1588  
Permanent link to this record
 
 
Author Nistor, L.C.; van Landuyt, J. openurl 
  Title Structural studies of diamond thin films grown from the arc plasma Type A1 Journal article
  Year 1998 Publication (down) Journal of materials research Abbreviated Journal J Mater Res  
  Volume 12 Issue 10 Pages 2533-2542  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos A1997YD17000007 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0884-2914 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.673 Times cited 13 Open Access  
  Notes Approved Most recent IF: 1.673; 1998 IF: 1.539  
  Call Number UA @ lucian @ c:irua:29674 Serial 3259  
Permanent link to this record
 
 
Author Nistor, L.C.; Richard, O.; Zhao, C.; Bender, H.; Van Tendeloo, G. doi  openurl
  Title Thermal stability of atomic layer deposited Zr:Al mixed oxide thin films: an in situ transmission electron microscopy study Type A1 Journal article
  Year 2005 Publication (down) Journal of materials research Abbreviated Journal J Mater Res  
  Volume 20 Issue 7 Pages 1741-1750  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000230296100012 Publication Date 2005-07-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0884-2914;2044-5326; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 1.673 Times cited Open Access  
  Notes Bil 01/73; IAP V-1 Approved Most recent IF: 1.673; 2005 IF: 2.104  
  Call Number UA @ lucian @ c:irua:54884 Serial 3631  
Permanent link to this record
 
 
Author Sanchez-Munoz, L.; Nistor, L.; Van Tendeloo, G.; Sanz, J. pdf  doi
openurl 
  Title Modulated structures in KAISi3O8: a study by high resolution electron microscopy and 29Si MAS-NMR spectroscopy Type A1 Journal article
  Year 1998 Publication (down) Journal of electron microscopy Abbreviated Journal Microscopy-Jpn  
  Volume 47 Issue 1 Pages 17-28  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Tokyo Editor  
  Language Wos 000073247300003 Publication Date 2012-04-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0744;1477-9986; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 0.9 Times cited 10 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:25661 Serial 2166  
Permanent link to this record
 
 
Author Nistor, L.C.; Ghica, C.; Matei, D.; Dinescu, G.; Dinescu, M.; Van Tendeloo, G. pdf  doi
openurl 
  Title Growth and characterization of a-axis textured ZnO thin films Type A1 Journal article
  Year 2005 Publication (down) Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 277 Issue Pages 26-31  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000228737900005 Publication Date 2005-02-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 44 Open Access  
  Notes Bil 01/73 Approved Most recent IF: 1.751; 2005 IF: 1.681  
  Call Number UA @ lucian @ c:irua:54787 Serial 1390  
Permanent link to this record
 
 
Author Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. pdf  doi
openurl 
  Title In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines Type A1 Journal article
  Year 2001 Publication (down) Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 90 Issue 1 Pages 167-174  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The formation of Ni silicides is studied by transmission electron microscopy during in situ heating experiments of 12 nm Ni layers on blanket silicon, or in patterned structures covered with a thin chemical oxide. It is shown that the first phase formed is the NiSi2 which grows epitaxially in pyramidal crystals. The formation of NiSi occurs quite abruptly around 400 degreesC when a monosilicide layer covers the disilicide grains and the silicon in between. The NiSi phase remains stable up to 800 degreesC, at which temperature the layer finally fully transforms to NiSi2. The monosilicide grains show different epitaxial relationships with the Si substrate. Ni2Si is never observed. (C) 2001 American Institute of Physics.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000169361100023 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 97 Open Access  
  Notes Approved Most recent IF: 2.068; 2001 IF: 2.128  
  Call Number UA @ lucian @ c:irua:102855 Serial 1587  
Permanent link to this record
 
 
Author Teodorescu, V.S.; Mihailescu, I.N.; Dinescu, M.; Chitica, N.; Nistor, L.C.; van Landuyt, J.; Barborica, A. doi  openurl
  Title Laser induced phase transition in iron thin films Type A1 Journal article
  Year 1994 Publication (down) Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation Abbreviated Journal  
  Volume 4 Issue Pages 127-130  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Les Ulis Editor  
  Language Wos A1994NT08700028 Publication Date 2007-07-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1155-4339; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 2 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10003 Serial 1787  
Permanent link to this record
 
 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Kononenko, T.V.; Obraztsova, E.D.; Strelnitsky, V.E. openurl 
  Title Formation of diamond nanocrystals in laser-irradiated amorphous carbon films Type P3 Proceeding
  Year 1994 Publication (down) International Conference on the New Diamond Science and Technology Abbreviated Journal  
  Volume 4 Issue Pages 25-29  
  Keywords P3 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10059 Serial 1259  
Permanent link to this record
 
 
Author Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. openurl 
  Title HREM investigation of a Fe/GaN/Fe tunnel junction Type A1 Journal article
  Year 2001 Publication (down) Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England Abbreviated Journal  
  Volume Issue 169 Pages 53-56  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface.  
  Address  
  Corporate Author Thesis  
  Publisher IOP Publishing Place of Publication Bristol Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0818-4 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:95715 Serial 1503  
Permanent link to this record
 
 
Author Nistor, L.C.; Richard, O.; Zhao, O.; Bender, H.; Stesmans, A.; Van Tendeloo, G. openurl 
  Title A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films Type A1 Journal article
  Year 2003 Publication (down) Institute of physics conference series T2 – Microscopy of semiconducting materials Abbreviated Journal  
  Volume Issue Pages 397-400  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The thermal stability of amorphous Al2O3 films (similar to8 and 80 nut thick) deposited by atomic layer deposition on HF-last and thin SiO2 covered (001) Si substrates is studied by transmission electron microscopy. The layers are in- and ex-situ annealed in the same temperature range.  
  Address  
  Corporate Author Thesis  
  Publisher Iop Place of Publication Cambridge Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0-7503-0979-2 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54860 Serial 2048  
Permanent link to this record
 
 
Author Nistor, L.; Van Tendeloo, G.; Amelinckx, S.; Shpanchenko, R.V.; van Landuyt, J. openurl 
  Title Ordering and defects in BanTaxTiyO3n ternary oxides Type P1 Proceeding
  Year 1994 Publication (down) Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences Abbreviated Journal  
  Volume Issue Pages 869-870  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos A1994BE09Y00422 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2-86883-226-1 ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:104477 Serial 2504  
Permanent link to this record
 
 
Author Nistor, L.; Nistor, S.V.; Dincã, G.; van Landuyt, J.; Schoemaker, D.; Copaciu, V.; Georgeoni, P.; Arnici, N. doi  openurl
  Title High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis Type A1 Journal article
  Year 1999 Publication (down) Diamonds an related materials Abbreviated Journal Diam Relat Mater  
  Volume 8 Issue Pages 738-742  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000080437000123 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.561 Times cited 7 Open Access  
  Notes Approved Most recent IF: 2.561; 1999 IF: 1.924  
  Call Number UA @ lucian @ c:irua:27519 Serial 1445  
Permanent link to this record
 
 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Obratzova, E.D.; Smolin, A.A. openurl 
  Title Nanocrystalline diamond films: transmission electron microscopy and Raman spectroscopy characterization Type A1 Journal article
  Year 1997 Publication (down) Diamond and related materials Abbreviated Journal Diam Relat Mater  
  Volume 6 Issue Pages 159-168  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos A1997WN37300021 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-9635 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.561 Times cited 116 Open Access  
  Notes Approved Most recent IF: 2.561; 1997 IF: 1.758  
  Call Number UA @ lucian @ c:irua:21406 Serial 2249  
Permanent link to this record
 
 
Author Nistor, L.; Teodorescu, V.; Ghica, C.; van Landuyt, J.; Dinca, G.; Georgeoni, P. pdf  doi
openurl 
  Title The influence of the h-BN morphology and structure on the c-BN growth Type A1 Journal article
  Year 2001 Publication (down) Diamond and related materials T2 – 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL Abbreviated Journal Diam Relat Mater  
  Volume 10 Issue 3-7 Pages 1352-1356  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000168730600206 Publication Date 2002-10-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.561 Times cited 17 Open Access  
  Notes Approved Most recent IF: 2.561; 2001 IF: 1.902  
  Call Number UA @ lucian @ c:irua:103421 Serial 3586  
Permanent link to this record
 
 
Author Nistor, L.; Buschmann, V.; Ralchenko, V.; Dinca, G.; Vlasov, I.; van Landuyt, J.; Fuess, H. pdf  doi
openurl 
  Title Microstructural characterization of diamond films deposited on c-BN crystals Type A1 Journal article
  Year 2000 Publication (down) Diamond and related materials T2 – 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC Abbreviated Journal Diam Relat Mater  
  Volume 9 Issue 3-6 Pages 269-273  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000087382400009 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0925-9635; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.561 Times cited 9 Open Access  
  Notes Approved Most recent IF: 2.561; 2000 IF: 1.591  
  Call Number UA @ lucian @ c:irua:102877 Serial 2041  
Permanent link to this record
 
 
Author Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. pdf  doi
openurl 
  Title Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer Type A1 Journal article
  Year 2000 Publication (down) Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 77 Issue 4 Pages 507-509  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000088225400016 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 44 Open Access  
  Notes Approved Most recent IF: 3.411; 2000 IF: 3.906  
  Call Number UA @ lucian @ c:irua:103448 Serial 712  
Permanent link to this record
 
 
Author Nistor, L.C.; van Landuyt, J.; Ralchenko, V.G.; Kononenko, T.V.; Obraztsova, E.D.; Strelnitsky, V.E. doi  openurl
  Title Direct observation of laser-induced crystallization of a-C : H films Type A1 Journal article
  Year 1994 Publication (down) Applied physics A : materials science & processing Abbreviated Journal  
  Volume 58 Issue 2 Pages 137-144  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The post-growth modification of diamond-like amorphous hydrogenated carbon a-C:H films by laser treatment has been studied by transmission electron microscopy and Raman spectroscopy. a-C:H films grown on Si substrates by benzene decomposition in a rf glow discharge were irradiated with 15 ns pulses of a KrF-excimer laser with fluences in the ran e of E = 50-700 mJ/cm(2). At fluences below 100 mJ/cm(2) an increase in the number of graphitic clusters and in their ordering was evidenced from Raman spectra, while the film structure remained amorphous according to electron microscopy and electron diffraction observations. At higher fluences the appearance of diamond particles of 2-7 nm size, embedded into the lower crystallized graphitic matrix, was observed and simultaneously a progressive growth of graphite nanocrystals with dimensions from 2 nm to 4 nm was deduced from Raman measurements. The maximum thickness of the crystallized surface layer (approximate to 400 nm) and the degree of laser annealing are limited by the film ablation which starts at E > 250 mJ/cm(2). The laser-treated areas lose their chemical inertness. In particular, chemical etching in chromium acid becomes possible, which may be used for patterning the highly inert carbon films.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Heidelberg Editor  
  Language Wos A1994MU87700005 Publication Date 2004-10-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0721-7250;1432-0630; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 73 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:99924 Serial 718  
Permanent link to this record
 
 
Author Amelinckx, S.; Nistor, L.C.; Van Tendeloo, G. openurl 
  Title Electron microscopic study of long period ordering in complex oxides Type H3 Book chapter
  Year 1994 Publication (down) Abbreviated Journal  
  Volume Issue Pages 1-8  
  Keywords H3 Book chapter; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication s.l. Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:10026 Serial 940  
Permanent link to this record
 
 
Author Nistor, L.C.; van Landuyt, J.; Dincã, G. openurl 
  Title HREM of defects in cubic boron nitride single crystals Type P1 Proceeding
  Year 1998 Publication (down) Abbreviated Journal  
  Volume Issue Pages 695-696  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cancun Editor  
  Language Wos 000077019900341 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record; WoS full record;  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:29679 Serial 1508  
Permanent link to this record
Select All    Deselect All << 1 2 >>
List View
 | 
Citations
 | 
Details
   print
toggle visibility
Save Citations:
Export Records:
Home CQL Search  |  Library Search  |  Show Record  |  Extract Citations Help